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21. 发明授权

US5598057A Reduction of the probability of interlevel oxide failures by minimization of lead overlap area through bus width reduction 失效
标题翻译：通过总线宽度减少减少引线重叠面积，减少层间氧化物故障的可能性
公开(公告)号：US5598057A
公开(公告)日：1997-01-28
申请号：US402596
申请日：1995-03-13
申请人： Kenneth G. Vickers
发明人： Kenneth G. Vickers
IPC分类号： H01J29/08 , H01J1/62
CPC分类号： H01J29/085 , H01J2329/00
摘要： A field emission display apparatus is comprised of an emitter plate 2 comprising a plurality of column conductors 9 intersecting a plurality of row conductors 6, and electron emitters 5 at the intersection of each of the row and column conductors. An anode plate 62 is adjacent to the emitter plate 2, the anode plate 62 comprising conductive stripes 50 which are alternately covered by material luminescing in the three primary colors. The conductive stripes 50 covered by the same luminescent material are electrically interconnected to form comb-like structures corresponding to each of the colors. The anode plate 62 contains an active region 58 and the buses 82, 84, 86 have a non-uniform width.
摘要翻译：场致发射显示装置包括发射极板2，发射极板2包括与多个行导体6相交的多个列导体9和在每个行和列导体的相交处的电子发射器5。阳极板62与发射极板2相邻，阳极板62包括由三原色发光的材料交替覆盖的导电条50。由相同的发光材料覆盖的导电条50电连接以形成对应于每种颜色的梳状结构。阳极板62包含有源区域58，并且总线82,84,86具有不均匀的宽度。

22. 发明授权

US5578902A Field emission display having modified anode stripe geometry 失效
标题翻译：具有改性阳极条几何形状的场发射显示
公开(公告)号：US5578902A
公开(公告)日：1996-11-26
申请号：US402750
申请日：1995-03-13
申请人： Kenneth G. Vickers
发明人： Kenneth G. Vickers
IPC分类号： H01J29/08 , H01J1/53
CPC分类号： H01J29/085 , H01J2201/30403
摘要： A field emission display apparatus comprised of an emitter plate 2 having a plurality of column conductors 9 intersecting a plurality of row conductors 6, and electron emitters 5 at the intersection of each of the row and column conductors. An anode plate 62 is adjacent to the emitter plate 2, the anode plate 62 comprising conductive stripes 90 which are alternately covered by material luminescing in the three primary colors. The conductive stripes 90 covered by the same luminescent material are electrically interconnected to form comb-like structures corresponding to each of the colors. The anode plate 62 contains an active region 58. The conductive stripes 90 have a first width W.sub.7 within the active region 58 and a second different width W.sub.8 outside of the active region 58.
摘要翻译：一种场发射显示装置，包括具有与多个行导体6相交的多个列导体9的发射极板2和在每个行和列导体的交叉处的电子发射器5。阳极板62与发射极板2相邻，阳极板62包括由三原色发光的材料交替覆盖的导电条纹90。由相同的发光材料覆盖的导电条纹90电连接以形成对应于每种颜色的梳状结构。阳极板62包含有源区域58.导电条纹90在有源区域58内具有第一宽度W7，在有源区域58之外具有第二不同宽度W8。

23. 发明授权

US5517075A Field emission device with distinct sized apertures 失效
标题翻译：具有不同尺寸孔径的场发射装置
公开(公告)号：US5517075A
公开(公告)日：1996-05-14
申请号：US544678
申请日：1995-10-18
申请人： Kenneth G. Vickers
发明人： Kenneth G. Vickers
IPC分类号： H01J1/304 , H01J9/02 , H01J1/16 , H01J19/10
CPC分类号： H01J1/3042 , H01J9/025
摘要： A size-arrayed emitter structure is disclosed for use in a field emission display device. The emitter structure is designed such that each emitter array (illustratively, an array comprising microtips 40 in a 5.times.5 matrix) has an emitter hole 52 size (critical dimension) distribution that is centered on the optimum hole critical dimension and extends past the point at which the emitter tip 40 will operate. If the manufacturing process varies and produces an actual critical dimension larger than the designed value, emitters with the designed critical dimensions smaller than optimal will shift toward optimal, and emitters with critical dimensions smaller than the minimum operating value will become operational, while emitters with designed critical dimensions larger than optimal will cease to function. Similarly, if the actual critical dimension is smaller than the designed value, emitters with the designed critical dimensions larger than optimal will shift toward optimal, and emitters with critical dimensions larger than the maximum operating value will become operational, while emitters with designed critical dimensions smaller than optimal will cease to function. This will result in a distribution of active emitters in each array that are centered on the optimal value and that extend from the minimum functional emitter critical dimension to the maximum functional emitter critical dimension. Where the number of emitter arrays per display pixel is relatively large, the critical dimension of all of the emitter holes within each array may be designed to be equal, and the totality of arrays within each pixel may be designed such that their emitter hole critical dimensions are centered on the optimum hole critical dimension and extend past the point at which the emitter tips will operate.
摘要翻译：公开了用于场发射显示装置的尺寸排列的发射极结构。发射极结构被设计成使得每个发射极阵列（示例性地，包括5×5矩阵中的微尖端40的阵列）具有以最佳孔临界尺寸为中心的发射极孔52的尺寸（临界尺寸）分布，并且延伸超过发射极尖端40将工作。如果制造过程发生变化并产生大于设计值的实际临界尺寸，则设计临界尺寸小于最佳值的发射器将朝向最佳状态转移，并且具有小于最小工作值的关键尺寸的发射器将变为可操作，而具有设计的发射器大于最优的关键尺寸将不再起作用。类似地，如果实际临界尺寸小于设计值，则具有大于最优值的设计临界尺寸的发射器将朝向最佳状态移动，并且具有大于最大工作值的关键尺寸的发射器将变得可操作，而具有设计临界尺寸的发射器较小而不是最优将停止运作。这将导致在每个阵列中以最佳值为中心并从最小功能发射极临界尺寸延伸到最大功能发射极临界尺寸的有源发射器的分布。在每个显示像素的发射器阵列的数量相对较大的情况下，每个阵列内的所有发射器孔的临界尺寸可被设计为相等，并且每个像素内的阵列的总数可被设计成使得它们的发射极临界尺寸以最佳孔临界尺寸为中心，并延伸超过发射器尖端将工作的点。

24. 发明授权

US5477284A Dual mode overhead projection system using field emission device 失效
标题翻译：双模架空投影系统采用场发射装置
公开(公告)号：US5477284A
公开(公告)日：1995-12-19
申请号：US356809
申请日：1994-12-15
申请人： Robert H. Taylor , Charles E. Primm , Kenneth G. Vickers , Lester L. Hodson
发明人： Robert H. Taylor , Charles E. Primm , Kenneth G. Vickers , Lester L. Hodson
IPC分类号： G03B21/132 , G03B21/00
CPC分类号： G03B21/132 , Y10S353/03
摘要： A dual mode projection system 30 includes a standard field emission device (FED) display panel 44 within a projector base 32. In this way, the light source of a standard overhead projector is replaced by FED panel 44. FED panel 44 is positioned within projector base 32 such that the viewing surface of panel 44 is substantially flush with the top surface of projector base 32. Thus, in a first mode of this dual mode projection system 30, FED panel 44 provides the light source for projecting an image of graphics 48 printed on transparency 46 onto another surface such as a projection screen or wall. FED panel 44 is coupled via connector 36 in projector base 32 and signal cable 38 to host system 40. Host system 40 may comprise the processing unit of a standard notebook computer including a keyboard 42 for data entry. Display information created by the electronics in host system 40 is transmitted through cable 38 to FED display 44. An image 50 created on FED display 44 is projected via lens system 34 onto a large surface such as a screen or wall. The luminescence needed to display image 50 created by FED panel 44 onto a separate surface is provided by the FED panel 44, and no additional light source is required for this projection function. Thus, in the second mode of this dual mode projection system 30, FED panel 44 provides a display of computer-generated images projected onto another surface. The first and second operational modes may be combined to provide a concurrent transparency and computer-generated video display.
摘要翻译：双模式投影系统30包括在投影仪基座32内的标准场发射装置（FED）显示面板44.以这种方式，标准高架投影仪的光源被FED面板44代替.FED面板44位于投影仪底座32使得面板44的观察表面基本上与投影仪基座32的顶表面齐平。因此，在该双模式投影系统30的第一模式中，FED面板44提供用于投影图形48的图像的光源在透明体46上印刷到诸如投影屏幕或墙壁的另一表面上。 FED面板44经由投影仪基座32中的连接器36和信号电缆38耦合到主机系统40.主机系统40可以包括标准笔记本计算机的处理单元，其包括用于数据输入的键盘42。由主机系统40中的电子设备创建的显示信息通过电缆38发送到FED显示器44.在FED显示器44上创建的图像50通过透镜系统34投影到诸如屏幕或墙壁的大表面上。由FED面板44将FED面板44所形成的图像50所需的发光由FED面板44提供，并且对于该投影功能不需要额外的光源。因此，在该双模投影系统30的第二模式中，FED面板44提供投影到另一表面上的计算机生成的图像的显示。可以组合第一和第二操作模式以提供并发的透明度和计算机生成的视频显示。

25. 发明授权

US06975920B2 In-situ randomization and recording of wafer processing order at process tools 有权
标题翻译：在工艺工具中原位随机化和记录晶圆处理顺序
公开(公告)号：US06975920B2
公开(公告)日：2005-12-13
申请号：US10727740
申请日：2003-12-04
申请人： Randolph W. Kahn , Kenneth G. Vickers , Richard L. Guldi , Edward J. Leonard , Yaojian Leng
发明人： Randolph W. Kahn , Kenneth G. Vickers , Richard L. Guldi , Edward J. Leonard , Yaojian Leng
IPC分类号： G05B19/418 , G06F7/00 , G06F19/00 , H01L21/00
CPC分类号： G05B19/41875 , G05B2219/32221 , G05B2219/32225 , G05B2219/45031 , H01L21/67276 , Y02P90/22 , Y10S414/137
摘要： Wafer order is randomized in-situ by use of a separate wafer staging area and randomly shuffling wafers to and from this staging area to shuffle the processing order of the wafer lot. Positional data is captured for each wafer at both the send and receive ends of the process.
摘要翻译：晶片顺序通过使用单独的晶片分级区域原位随机化，并且从该分段区域随机混洗晶片以洗牌晶片批次的处理顺序。在进程的发送和接收端都为每个晶片捕获位置数据。

26. 发明授权

US06862495B2 In-situ randomization and recording of wafer processing order at process tools 有权
公开(公告)号：US06862495B2
公开(公告)日：2005-03-01
申请号：US10727722
申请日：2003-12-04
申请人： Randolph W. Kahn , Kenneth G. Vickers , Richard L. Guldi , Edward J. Leonard , Yaojian Leng
发明人： Randolph W. Kahn , Kenneth G. Vickers , Richard L. Guldi , Edward J. Leonard , Yaojian Leng
IPC分类号： G05B19/418 , G06F7/00 , G06F19/00 , H01L21/00
CPC分类号： G05B19/41875 , G05B2219/32221 , G05B2219/32225 , G05B2219/45031 , H01L21/67276 , Y02P90/22 , Y10S414/137
摘要： Wafer order is randomized in-situ by use of a separate wafer staging area and randomly shuffling wafers to and from this staging area to shuffle the processing order of the wafer lot. Positional data is captured for each wafer at both the send and receive ends of the process.

27. 发明授权

US5938493A Method for increasing field emission tip efficiency through micro-milling techniques 失效
标题翻译：通过微铣削技术提高场发射尖端效率的方法
公开(公告)号：US5938493A
公开(公告)日：1999-08-17
申请号：US768724
申请日：1996-12-18
申请人： Kenneth G. Vickers
发明人： Kenneth G. Vickers
IPC分类号： H01J9/02 , H01J9/00 , H01J1/02
CPC分类号： H01J9/025
摘要： A method of fabricating electron emission structures 30 having enhanced emission characteristics. The method comprising the steps of providing a substrate 10 having electron emission structures 5 thereon and having a gate layer 6 over the electron emission structures 5. Then modifying the electron emission structures with a focused beam to create modified electron emission structures 30 with enhanced emission efficiency.
摘要翻译：一种制造具有增强的发射特性的电子发射结构30的方法。该方法包括以下步骤：在其上提供其上具有电子发射结构5的衬底10，并在电子发射结构5上方具有栅极层6.然后用聚焦光束修改电子发射结构，以产生具有增强的发射效率的改进的电子发射结构30 。

28. 发明授权

US5836799A Self-aligned method of micro-machining field emission display microtips 失效
标题翻译：自动对准微加工场放电显示微型方法
公开(公告)号：US5836799A
公开(公告)日：1998-11-17
申请号：US761587
申请日：1996-12-06
申请人： Jules D. Levine , Kenneth G. Vickers
发明人： Jules D. Levine , Kenneth G. Vickers
IPC分类号： H01J9/02
CPC分类号： H01J9/025
摘要： A method of fabricating electron emission structures 28 having enhanced emission characteristics. The method comprises the steps of providing a substrate 10 having electron emission structures 5 thereon and having a layer 5" over the electron emission structures. The layer 5" having apertures 30 in alignment with said electron emission structures 5. Then modifying the electron emission structures 5 through the apertures 30 with a directional ion milling beam; thereby creating modified electron emission structures 17,29 with enhanced emission efficiency.
摘要翻译：一种制造具有增强的发射特性的电子发射结构28的方法。该方法包括以下步骤：在其上提供具有电子发射结构5的衬底10，并在电子发射结构上方具有层5“。层5“具有与所述电子发射结构5对准的孔30.然后用定向离子铣削梁通过孔30修改电子发射结构5; 从而产生具有增强的发射效率的改进的电子发射结构17,29。

29. 发明授权

US5666024A Low capacitance field emission device with circular microtip array 失效
标题翻译：具有圆形微尖阵列的低电容场发射器件
公开(公告)号：US5666024A
公开(公告)日：1997-09-09
申请号：US518909
申请日：1995-08-24
申请人： Kenneth G. Vickers
发明人： Kenneth G. Vickers
IPC分类号： H01J1/304 , H01J1/62 , H01J1/16 , H01J1/53 , H01J63/04
CPC分类号： H01J1/3042 , H01J2201/319
摘要： An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (122, 222) spaced by a dielectric insulating layer (25) from a cathode electrode including a conductive mesh (118, 218). Circular arrays (112) of microtips (14) are located concentrically within mesh spacings (116, 216) on a resistive layer (15), within apertures (26) formed on ring-shaped pads (127, 227) patterned in an extraction electrode (122). Mesh spacings (116) and pads (127) are circular. Mesh spacings (226) and pads (227) are hexagonal. For reduced capacitance, dielectric material (25) is etched from cores (144) of rings (127, 227) and from toroidal regions (148) below rings (127, 227). Mesh spacings (116, 216) are hexagonal close-packed and mesh material (118, 218) is removed from portions (142) of cathode electrode. Y-shaped bridging strips (129') have nodes (146) located over removed cathode electrode portions (142).
摘要翻译：用于FED图像显示器的电子发射器板（110）具有从包括导电网（118,218）的阴极电极与电介质绝缘层（25）间隔开的提取（栅极）电极（122,222）。微尖端（14）的圆形阵列（112）同心地位于电阻层（15）上的网格间隔（116,216）内，形成在图案化在引出电极中的环形焊盘（127,227）上的孔（26）内（122）。网状间隔（116）和垫（127）是圆形的。网状间隔（226）和垫（227）是六边形。对于减小的电容，从环（127,227）的芯（144）和环（127,227）下方的环形区（148）蚀刻电介质材料（25）。网状间隔（116,216）是六边形紧密堆积的，并且从阴极电极的部分（142）去除网状材料（118,218）。 Y形桥接条（129'）具有位于去除的阴极电极部分（142）之上的节点（146）。

30. 发明授权

US5621272A Field emission device with over-etched gate dielectric 失效
标题翻译：具有过蚀刻栅极电介质的场致发射器件
公开(公告)号：US5621272A
公开(公告)日：1997-04-15
申请号：US453593
申请日：1995-05-30
申请人： Jules D. Levine , Kenneth G. Vickers
发明人： Jules D. Levine , Kenneth G. Vickers
IPC分类号： H01J3/02 , H01J9/02 , H01J1/02 , H01J1/46 , H01J1/62 , H01J29/70
CPC分类号： H01J9/025 , H01J3/022 , H01J2329/00
摘要： An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (22) spaced by an insulating spacer (125) from a cathode electrode including a conductive mesh (18). Arrays of microtips (14) are located in mesh spacings (16), within apertures (26) formed in extraction electrode (22) and subcavities (141) formed through apertures (26) in insulating spacer (125). Subcavities (141a) are open to row-adjacent and column-adjacent subcavities (141b, 141c) to form larger main cavities (144). Posts (143) of insulating spacer (125) separate diagonally-adjacent cavities (141d). Subcavities (141) are formed by over-etching a layer of insulating spacer material (25) through apertures (26) before or after forming microtips (14) through the same apertures (26). Over-etching reduces the dielectric constant factor of gate-to-cathode capacitance in the finished structure.
摘要翻译：用于FED图像显示器的电子发射极板（110）具有从包括导电网（18）的阴极电极与绝缘间隔物（125）间隔开的提取（栅极）电极（22）。小尖头（14）的阵列位于形成在引出电极（22）的孔（26）中的网格间隔（16）中，以及通过绝缘间隔物（125）中的孔（26）形成的子部分（141）。子腔（141a）对行相邻和列相邻的子区（141b，141c）开放以形成较大的主腔（144）。绝缘间隔物（125）的柱（143）分离对角相邻的空腔（141d）。在通过相同的孔（26）形成微尖端（14）之前或之后，通过孔（26）过度蚀刻绝缘隔离材料层（25）形成子腔（141）。过蚀刻降低了成品结构中栅极至阴极电容的介电常数因子。

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