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21. 发明申请

US20050024317A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20050024317A1
公开(公告)日：2005-02-03
申请号：US10868345
申请日：2004-06-16
申请人： Keiichi Sano
发明人： Keiichi Sano
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36
CPC分类号： G09G3/3648 , G09G2300/0809 , G09G2300/0828
摘要： The invention is directed to simplification of a structure of a drive circuit disposed on a periphery of a pixel region to reduce a frame area of a display panel and power consumption. In a pixel, a TFT (T1), a TFT (T2), and a TFT (T3) are serially connected. The TFT (T1) is connected with a drain signal line DL1, and the TFT (T3) is connected with a pixel electrode of a liquid crystal. A first terminal of each of the first capacitor and the second capacitor is applied with ground potential (0V). A second terminal of the first capacitor is connected with a connection point of the TFT (T1) and the TFT (T2). A second terminal of the second capacitor is connected with a connection point of the TFT (T2) and the TFT (T3). Gates of the TFT (T1), the TFT (T2), and the TFT (T3) are respectively applied with control pulse signals A, B, and C for controlling on and off of these TFTs.
摘要翻译：本发明旨在简化设置在像素区域的周边上的驱动电路的结构，以减少显示面板的边框面积和功耗。在像素中，TFT（T1），TFT（T2）和TFT（T3）串联连接。 TFT（T1）与漏极信号线DL1连接，TFT（T3）与液晶的像素电极连接。第一电容器和第二电容器中的每一个的第一端子被施加接地电位（0V）。第一电容器的第二端子与TFT（T1）和TFT（T2）的连接点连接。第二电容器的第二端子与TFT（T2）和TFT（T3）的连接点连接。 TFT（T1），TFT（T2）和TFT（T3）的栅极分别施加控制脉冲信号A，B和C，用于控制这些TFT的导通和关断。

22. 发明授权

US5492142A Polycrystalline silicon photovoltaic device 失效
标题翻译：多晶硅光电器件
公开(公告)号：US5492142A
公开(公告)日：1996-02-20
申请号：US371095
申请日：1995-01-10
申请人： Keiichi Sano
发明人： Keiichi Sano
IPC分类号： H01L21/20 , H01L31/04 , H01L31/0392 , H01L31/0368
CPC分类号： H01L21/2022
摘要： A polycrystalline silicon film is prepared by forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and then heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film. The polycrystalline silicon film has improved characteristics as a photoelectric conversion layer in a photovoltaic device.
摘要翻译：通过在拉曼光谱中形成含有氢的TA非晶硅膜的强度比TA / TO为TA峰强度至少为0.5的TO峰强度，然后对非晶硅膜进行热处理，与多晶硅膜相同。多晶硅膜在光伏器件中具有作为光电转换层的改进的特性。

23. 发明授权

US5378289A Method of forming crystalline silicon film and solar cell obtained thereby 失效
标题翻译：由此形成晶体硅膜和太阳能电池的方法
公开(公告)号：US5378289A
公开(公告)日：1995-01-03
申请号：US151271
申请日：1993-11-12
申请人： Shigeru Noguchi , Keiichi Sano , Hiroshi Iwata
发明人： Shigeru Noguchi , Keiichi Sano , Hiroshi Iwata
IPC分类号： H01L21/20 , H01L31/0236 , H01L31/04 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/0236 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A mold of crystalline silicon having a textured surface is placed on an amorphous silicon film so that projecting portions of the textured surface are in contact with a surface of the silicon film. The amorphous silicon film is then heated for crystallizing the same by solid phase epitaxy, thereby forming a crystalline silicon film having a textured surface corresponding to that of the mold.
摘要翻译：具有纹理表面的晶体硅的模具被放置在非晶硅膜上，使得纹理表面的突出部分与硅膜的表面接触。然后通过固相外延加热非晶硅膜使其结晶，从而形成具有对应于模具的纹理表面的结晶硅膜。

24. 发明授权

US5370747A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5370747A
公开(公告)日：1994-12-06
申请号：US980451
申请日：1992-11-23
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/04 , H01L31/0236 , H01L31/052 , H01L31/075 , H01L31/06
CPC分类号： H01L31/075 , H01L31/0236 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： A photovoltaic device including a substrate, a first electrode layer provided on the substrate, a photoelectric conversion layer provided on the first electrode, and a second electrode layer provided on the photoelectric conversion layer. A discontinuous interfacial layer is provided at at least one of the interfaces between a first conductivity type layer and a photoactive layer provided in the photoelectric conversion layer, between the photoactive layer and a second, opposite conductivity type layer of the photoelectric conversion layer, and between the photoelectric conversion layer and the second electrode layer. The at least one interface provided with the discontinuous interfacial layer may be so textured that portions of the interface not provided with interfacial layers project toward the substrate.
摘要翻译：一种光电器件，包括衬底，设置在衬底上的第一电极层，设置在第一电极上的光电转换层和设置在光电转换层上的第二电极层。在第一导电类型层和设置在光电转换层中的光敏层之间的光电转换层和光电转换层的第二相反导电类型层之间的界面中的至少一个界面和介于光电转换层和第二电极层。设置有不连续界面层的至少一个界面可以是如此纹理的，使得不具有界面层的界面的部分向基板突出。

25. 发明授权

US5318919A Manufacturing method of thin film transistor 失效
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US5318919A
公开(公告)日：1994-06-07
申请号：US738201
申请日：1991-07-30
申请人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04 , H01L29/784
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/78618 , H01L29/78675
摘要： A manufacturing method of a thin film transistor, wherein a laminated body consisting of an intrinsic amorphous silicon layer and a conductive amorphous silicon layer is formed on a glass substrate, and annealed at low temperatures not higher than 600.degree. C. thereby obtaining a polycrystalline silicon film. The conductive amorphous silicon layer gives girth to a core for polycrystallization, and therefore the intrinsic amorphous silicon layer is easily recrystallized by annealing at low temperatures.
摘要翻译：一种薄膜晶体管的制造方法，其中在玻璃基板上形成由本征非晶硅层和导电非晶硅层构成的层叠体，并在不高于600℃的低温下退火，从而获得多晶硅电影。导电非晶硅层在芯体上产生多晶化，因此本征非晶硅层通过在低温退火而容易地重结晶。

26. 发明授权

US5213628A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5213628A
公开(公告)日：1993-05-25
申请号：US757250
申请日：1991-09-10
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/0745 , H01L31/0747 , H01L31/20
CPC分类号： H01L31/0747 , H01L31/0745 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photovoltaic device includes a monocrystalline or polycrystalline semiconductor layer of one conductivity type, a substantially intrinsic substantially amorphous semiconductor layer having a predetermined thickness small enough to avoid producing carriers therein. The substantially intrinsic, substantially amorphous layer is formed on the one conductivity type semiconductor layer, and a substantially amorphous semiconductor layer of the opposite conductivity type is formed on the intrinsic, semiconductor layer.
摘要翻译：光电器件包括一种导电类型的单晶或多晶半导体层，具有足够小以避免在其中产生载流子的预定厚度的基本上本征的基本上非晶半导体层。在一个导电型半导体层上形成基本上本征的基本非晶层，并且在本征半导体层上形成相反导电类型的基本非晶半导体层。

27. 发明授权

US07714828B2 Display device having a shift register capable of reducing the increase in the current consumption 有权
标题翻译：具有能够减少电流消耗增加的移位寄存器的显示装置
公开(公告)号：US07714828B2
公开(公告)日：2010-05-11
申请号：US10875504
申请日：2004-06-25
申请人： Keiichi Sano
发明人： Keiichi Sano
IPC分类号： G09G3/36
CPC分类号： G09G3/20 , G09G3/3677 , G09G3/3688 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/08 , G09G2330/021
摘要： A display capable of reducing the increase in the current consumption is disclosed. The display comprises a shift register circuit having a plurality of first circuit portions connected thereto. Each of the first circuit portions includes a first conductive type first transistor connected to a first voltage supply source, a first conductive type second transistor connected to a second voltage supply source, a first conductive type third transistor connected between the gate of the first transistor and the second potential, a first conductive type fourth transistor connected to the gate of the first transistor and turned on in response to a first signal, and a first conductive type fifth transistor connected between the fourth transistor and the first potential and turned off in response to a second signal when the first signal is for turning on the fourth transistor.
摘要翻译：公开了能够减少电流消耗增加的显示器。显示器包括具有连接到其上的多个第一电路部分的移位寄存器电路。每个第一电路部分包括连接到第一电压源的第一导电类型的第一晶体管，连接到第二电压源的第一导电类型的第二晶体管，连接在第一晶体管的栅极和第二电位，连接到第一晶体管的栅极并响应于第一信号导通的第一导电类型第四晶体管，以及连接在第四晶体管和第一电位之间的第一导电类型第五晶体管，并响应于当第一信号用于接通第四晶体管时的第二信号。

28. 发明授权

US07586468B2 Display device using current driving pixels 有权
标题翻译：使用当前驱动像素的显示设备
公开(公告)号：US07586468B2
公开(公告)日：2009-09-08
申请号：US10872347
申请日：2004-06-18
申请人： Keiichi Sano
发明人： Keiichi Sano
IPC分类号： G09G5/00
CPC分类号： G09G3/3241 , G09G3/3283 , G09G2300/0842 , G09G2300/0861 , G09G2310/027 , G09G2310/06 , G09G2330/028
摘要： A video signal line receives a voltage video signal. The supplied voltage video signal is provided to a voltage-current conversion circuit in a corresponding column. The voltage-current conversion circuit converts the voltage video signal into a current signal, and supplies the current signal to a corresponding pixel circuit. Each voltage-current conversion circuit includes an output transistor for supplying current in accordance with the voltage video signal, and a compensation circuit for compensating for variations in threshold of the output transistor.
摘要翻译：视频信号线接收电压视频信号。所提供的电压视频信号被提供给相应列中的电压 - 电流转换电路。电压 - 电流转换电路将电压视频信号转换为电流信号，并将电流信号提供给相应的像素电路。每个电压 - 电流转换电路包括用于根据电压视频信号提供电流的输出晶体管和用于补偿输出晶体管的阈值变化的补偿电路。

29. 发明申请

US20090128473A1 ACTIVE MATRIX DISPLAY DEVICES 审中-公开
标题翻译：主动矩阵显示设备
公开(公告)号：US20090128473A1
公开(公告)日：2009-05-21
申请号：US12267136
申请日：2008-11-07
申请人： Keitaro YAMASHITA , Keiichi Sano , Masahiro Yoshiga
发明人： Keitaro YAMASHITA , Keiichi Sano , Masahiro Yoshiga
IPC分类号： G09G3/36
CPC分类号： G09G3/2074 , G09G3/2011 , G09G3/2077 , G09G3/3648 , G09G2300/0443 , G09G2300/0857
摘要： Active matrix display devices capable of improving aperture ratio of pixels and of smoothing intermediate colors are presented. An active matrix display device has static random access memory (SRAM) devices and digital to analog converters (DAC), which are both allocated to each of sub-pixels divided by a pixel. The SRAM stores an input digital data with over two bits, which can be used as gradient information for gray scale display of the sub-pixels. The input digital data is converted into analog data for display by the DAC. Gray scale display of the sub-pixels can be performed based on gray scales determined by the analog data for display. The pixel can be used to display multiple gray scales according to combinations of areas and gray scales of the sub-pixels.
摘要翻译：提出了能够提高像素的开口率和平滑中间色的有源矩阵显示装置。有源矩阵显示装置具有静态随机存取存储器（SRAM）器件和数模转换器（DAC），它们被分配给由像素划分的每个子像素。 SRAM存储具有超过两位的输入数字数据，其可以用作用于子像素的灰度显示的梯度信息。输入数字数据被转换为模拟数据，供DAC显示。可以基于由用于显示的模拟数据确定的灰度级来执行子像素的灰度级显示。该像素可以用于根据子像素的面积和灰度的组合来显示多个灰度级。

30. 发明申请

US20080024408A1 SYSTEMS FOR DISPLAYING IMAGES AND DRIVING METHOD THEREOF 审中-公开
标题翻译：用于显示图像的系统及其驱动方法
公开(公告)号：US20080024408A1
公开(公告)日：2008-01-31
申请号：US11459656
申请日：2006-07-25
申请人： Keiichi Sano , Wei-Cheng Lin , Chi-Fu Wu
发明人： Keiichi Sano , Wei-Cheng Lin , Chi-Fu Wu
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3607 , G09G3/3614 , G09G2300/0426 , G09G2320/0209
摘要： Systems for displaying images. The system comprises a display panel comprising a plurality of data lines DL(x), a plurality of gate lines SL(y) perpendicular to the data lines DL(x), and a pixel array coupled to the data lines and the gate lines. The pixel array comprises a first pixel P(x+1, y) coupled to the gate line SL(y+1) and the data line DL(x+1), a second pixel P(x+1, y+1) coupled to the gate line SL(y+1) and the data line DL(x+2), a third pixel P(x, y+1) coupled to the gate line SL(y+2) and the data line DL(x+1), and a fourth pixel P(x, y+2) coupled to the gate line SL(y+2) and the data line DL(x).
摘要翻译：用于显示图像的系统该系统包括包括多条数据线DL（x），垂直于数据线DL（x）的多条栅极线SL（y））和耦合到数据线和栅极线的像素阵列的显示面板。像素阵列包括耦合到栅极线SL（y + 1）和数据线DL（x + 1）的第一像素P（x + 1，y），第二像素P（x + 1，y + 1）耦合到栅极线SL（y + 1）和数据线DL（x + 2）的第三像素P（x，y + 1）耦合到栅极线SL（y + 2）和数据线DL x + 1）和耦合到栅极线SL（y + 2）和数据线DL（x）的第四像素P（x，y + 2）。

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