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21. 发明授权

US07713582B2 Substrate processing method for film formation 有权
标题翻译：用于成膜的基板加工方法
公开(公告)号：US07713582B2
公开(公告)日：2010-05-11
申请号：US12039686
申请日：2008-02-28
申请人： Masanori Sakai , Toru Kagaya , Nobuhito Shima
发明人： Masanori Sakai , Toru Kagaya , Nobuhito Shima
IPC分类号： C23C16/455
CPC分类号： C23C16/455
摘要： A film-forming method that includes providing a substrate to be film-formed in a reaction chamber of an apparatus that includes: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber; a second gas supply pipe in fluid communication with the reaction chamber for carrying a second processing gas to the reaction chamber; a gas reservoir in fluid communication with the first gas supply pipe; and a bypass line in fluid communication with the first gas supply pipe, the bypass line bypassing the gas reservoir; and the steps of alternately supplying the first processing gas and the second processing gas into the reaction chamber a plurality of times to form a film on the substrate, and wherein when the first gas is supplied, the gas reservoir or the bypass line is selected to supply the first gas into the reaction chamber through the first gas supply pipe, and when the second gas is supplied the second gas is supplied through the second gas supply pipe.
摘要翻译：一种成膜方法，其特征在于，包括在反应室内设置成膜的基板，所述反应室包括：所述反应室; 与所述反应室流体连通以将第一处理气体输送到所述反应室的第一气体供给管; 与所述反应室流体连通以将第二处理气体输送到所述反应室的第二气体供给管; 与所述第一气体供给管流体连通的气体储存器; 以及与第一气体供给管流体连通的旁通管路，旁通管线绕过气体储存器; 以及将第一处理气体和第二处理气体交替地供给到反应室中以在基板上形成膜的步骤，并且其中当供应第一气体时，选择气体储存器或旁路管线通过第一气体供给管将第一气体供应到反应室中，并且当供应第二气体时，通过第二气体供给管供给第二气体。

22. 发明申请

US20080160214A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20080160214A1
公开(公告)日：2008-07-03
申请号：US12039686
申请日：2008-02-28
申请人： Masanori Sakai , Toru Kagaya , Nobuhito Shima
发明人： Masanori Sakai , Toru Kagaya , Nobuhito Shima
IPC分类号： C23C16/455
CPC分类号： C23C16/455
摘要： A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.
摘要翻译：基板处理装置包括形成用于处理基板7的空间的反应室6和连接到反应室6的气体储存部10，具有用于供给用于处理基板7的气体的气体供给管和用于处理基板7的排气管排出反应室6内的气体并储存供应到反应室6的气体，并将供给到气体供给管中途的反应室6的气体和旁通燃气保持部10的旁通管路11保持气体接收部分10与旁路管线平行布置;以及控制部分60，当处理基板7时，通过使用气体储存部分10和旁通管线11中的任何一个将处理气体供应到反应室6。

23. 发明申请

US20120034788A1 SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及半导体器件的制造方法
公开(公告)号：US20120034788A1
公开(公告)日：2012-02-09
申请号：US13270811
申请日：2011-10-11
申请人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
发明人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
IPC分类号： H01L21/31
CPC分类号： H01L21/3162 , C23C16/403 , C23C16/45546 , C23C16/4557 , C23C16/45578 , C23C16/46 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/67109
摘要： A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.
摘要翻译：基板处理装置包括反应管和加热硅晶片的加热器。将三甲基铝（TMA）和臭氧（O3）交替地进料到反应管中，以在晶片的表面上产生Al 2 O 3膜。该设备还包括供应管和用于使臭氧和TMA流动的喷嘴和向反应管供应气体的喷嘴。两个供应管连接到设置在加热器内部的喷嘴内的温度低于晶片温度的反应管内的区域，臭氧和TMA通过喷嘴供应到反应管中。

24. 发明授权

US08227346B2 Method of producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08227346B2
公开(公告)日：2012-07-24
申请号：US13306654
申请日：2011-11-29
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/44
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

25. 发明申请

US20120077350A1 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：生产半导体器件的方法
公开(公告)号：US20120077350A1
公开(公告)日：2012-03-29
申请号：US13306654
申请日：2011-11-29
申请人： Hironobu MIYA , Kazuyuki TOYODA , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu MIYA , Kazuyuki TOYODA , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/31
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

26. 发明申请

US20100233887A1 PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件和衬底加工设备的生产方法
公开(公告)号：US20100233887A1
公开(公告)日：2010-09-16
申请号：US12788697
申请日：2010-05-27
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/314 , H01L21/316 , H01L21/318
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.
摘要翻译：一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的施加指定次数，直到在基板表面上形成所需厚度的膜。

27. 发明申请

US20070292974A1 Substrate Processing Method and Substrate Processing Apparatus 审中-公开
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20070292974A1
公开(公告)日：2007-12-20
申请号：US11664282
申请日：2006-01-27
申请人： Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Kazuyuki Okuda
发明人： Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Kazuyuki Okuda
IPC分类号： B05C11/00 , H01L21/00
CPC分类号： C23C16/45546 , C23C16/345 , C23C16/50 , H01L21/0217 , H01L21/0228 , H01L21/3141
摘要： Disclosed is a substrate processing method in which a plurality of processing gases are alternately supplied to and exhausted from a processing chamber forming a space in which a substrate or substrates are to be processed to form a desired thin film on the substrate or each of the substrates comprising transferring the substrate or the substrates into the processing chamber, and controlling a supply time of one of the plurality of the processing gases to control an amount of a chemical species which exists in the thin film and the existing amount of which a film stress depends on, thereby controlling the film stress of the thin film.
摘要翻译：公开了一种基板处理方法，其中多个处理气体被交替地供给到处理室并从其中排出，所述处理室形成要在其上处理基板或基板的空间，以在基板或每个基板上形成期望的薄膜包括将衬底或衬底转移到处理室中，并且控制多个处理气体中的一个处理气体的供给时间以控制存在于薄膜中的化学物质的量以及薄膜应力所依赖的现有量从而控制薄膜的薄膜应力。

28. 发明授权

US09169553B2 Semiconductor device producing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US09169553B2
公开(公告)日：2015-10-27
申请号：US13156025
申请日：2011-06-08
申请人： Masanori Sakai , Nobuhito Shima , Kazuyuki Okuda
发明人： Masanori Sakai , Nobuhito Shima , Kazuyuki Okuda
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45536
摘要： A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.
摘要翻译：基板处理装置包括反应容器11，形成容纳基板1的空间，并且适于提供多个反应气体以进行基板的所需处理;形成在反应容器11中用于排出反应容器的排气口 11，以及用于将至少多个反应气体供给到反应容器11中的气体供给系统70A，70B，气体供给系统70A，70B，其包括用于供给清洁气体以进行所需基板的处理的清洗气体供给单元 1，从而除去反应容器11中的附着物;以及后处理气体供给单元，用于提供能够除去残留在反应容器11中的清洁气体中的元素的后处理气体，清洁气体，后处理气体含有用于进行基材的所需加工的所有反应气体。

29. 发明授权

US08105957B2 Method of producing semiconductor device 有权
公开(公告)号：US08105957B2
公开(公告)日：2012-01-31
申请号：US12415821
申请日：2009-03-31
申请人： Hironobu Miya , Kazuyuki Toyoda , Taketoshi Sato , Masayuki Asai , Norikazu Mizuno , Masanori Sakai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Taketoshi Sato , Masayuki Asai , Norikazu Mizuno , Masanori Sakai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/469
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

30. 发明申请

US20110300722A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20110300722A1
公开(公告)日：2011-12-08
申请号：US13156025
申请日：2011-06-08
申请人： Masanori Sakai , Nobuhito Shima , Kazuyuki Okuda
发明人： Masanori Sakai , Nobuhito Shima , Kazuyuki Okuda
IPC分类号： H01L21/318
CPC分类号： C23C16/4405 , C23C16/45536
摘要： A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.
摘要翻译：基板处理装置包括反应容器11，形成容纳基板1的空间，并且适于提供多个反应气体以进行基板的所需处理;形成在反应容器11中用于排出反应容器的排气口 11，以及用于将至少多个反应气体供给到反应容器11中的气体供给系统70A，70B，气体供给系统70A，70B，其包括用于供给清洁气体以进行所需基板的处理的清洗气体供给单元 1，从而除去反应容器11中的附着物;以及后处理气体供给单元，用于提供能够除去残留在反应容器11中的清洁气体中的元素的后处理气体，清洁气体，后处理气体含有用于进行基材的所需加工的所有反应气体。

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