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    • 23. 发明授权
    • Light-emitting diode
    • 发光二极管
    • US5665984A
    • 1997-09-09
    • US705095
    • 1996-08-29
    • Koichi HasegawaIsao Kabe
    • Koichi HasegawaIsao Kabe
    • H01L33/30H01L33/00
    • H01L33/30H01L33/0025
    • A light-emitting diode comprises a first layer of Si-doped N-type Ga.sub.1-x Al.sub.x As, a second layer of Si-doped P-type Ga.sub.1-y Al.sub.y As and a third layer of P-type Ga.sub.1-z Al.sub.z As, in that order, in which the first and third layers have a higher Al concentration than the second layer, an Al concentration in the second layer decreases going from a first layer side to a third layer side, an Al concentration in a portion of the second layer in contact with the third layer is higher than an Al concentration value in a portion of the second layer in contact with the first layer minus 0.06, the second layer is formed to a thickness of approximately 8 .mu.m to 50 .mu.m, and light emission is via the first layer.
    • 发光二极管依次包括第一层Si掺杂的N型Ga 1-x Al x As,第二层Si掺杂的P型Ga1-yAlyAs和第三层P型Ga1-zAlzAs, 其中第一和第三层具有比第二层更高的Al浓度,第二层中的Al浓度从第一层侧减小到第三层侧,第二层的与第二层接触的部分中的Al浓度 与第一层接触的第二层的部分中的Al浓度值高于第二层的0.06%,第二层形成厚度约为8μm〜50μm,发光通过第一层 层。