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    • 23. 发明授权
    • Optical apparatus and method for producing the same
    • 光学装置及其制造方法
    • US07133428B2
    • 2006-11-07
    • US10461620
    • 2003-06-13
    • Yasuo KitaokaKazuhisa YamamotoMakoto KatoKiminori MizuuchiKenichi Nishiuchi
    • Yasuo KitaokaKazuhisa YamamotoMakoto KatoKiminori MizuuchiKenichi Nishiuchi
    • H01S3/00
    • H01S5/0687G02B6/42G02B6/4201G02B6/4213G02B6/4215G02B6/4224G02B6/4257G02B6/4271G02B6/4272G02F1/37H01S5/0092H01S5/02252H01S5/02476H01S5/0612H01S5/06256H01S5/06837
    • A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value Io corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value Io, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value Io, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.
    • 一种发光装置,包括:底座; 安装在底座上的半导体激光芯片; 基板,其安装在所述基座上并且包括光波导; 以及设置在半导体激光芯片和基板之间的具有预定厚度的物质。 在用于光源的振荡波长稳定装置中,光源是半导体激光器,其包括:用于提供增益的有源区; 以及用于控制振荡波长的分布式布拉格反射(DBR)区域。 该装置包括控制部分,其在检测半导体激光器的输出光的振荡波长的同时,沿第一方向在DBR区域中单向变化DBR电流,以便检测DBR电流值I < o ,然后将DBR电流在与第一方向相反的第二方向上单调地改变超过检测值I 0,然后单调地改变DBR电流 在第一方向上将DBR电流设定在检测值I ,从而将半导体激光器芯片的振荡波长固定在预定波长值。
    • 24. 发明申请
    • Optical multilayer disk, multiwavelength light source, and optical system using them
    • 光学多层盘,多波长光源和使用它们的光学系统
    • US20060193231A1
    • 2006-08-31
    • US11409762
    • 2006-04-24
    • Kiminori MizuuchiKazuhisa YamamotoRie KojimaNoboru Yamada
    • Kiminori MizuuchiKazuhisa YamamotoRie KojimaNoboru Yamada
    • G11B7/135
    • G11B7/243G02B6/126G02B6/29362G02B2006/12164G02F1/3532G02F1/3544G02F1/3775G02F2001/3548G02F2201/18G02F2203/58G11B7/00454G11B7/005G11B7/124G11B7/1275G11B7/1395G11B7/24038G11B7/259G11B7/26G11B2007/0013G11B2007/24312G11B2007/24314G11B2007/24316
    • When a wavelength of a first laser beam with which a first recording medium including a first recording layer is recorded and reproduced is indicated as λ1 (nm), a wavelength of a second laser beam with which a second recording medium including a second recording layer is recorded and reproduced as λ2 (nm), the relationship between the wavelength λ1 and the wavelength λ2 is set to be expressed by 10≦|λ1−λ2|≦120. The first recording layer has a light absorptance ratio of at least 1.0 with respect to the wavelength λ1. The light transmittance of the first recording medium with respect to the wavelength λ2 is set to be at least 30 in both the cases where the recording layer is in a crystal state and in an amorphous state. In order to record and reproduce the optical multilayer disk with the above-mentioned characteristics, a multiwavelength light source with the following configuration is used. Wavelengths of fundamental waves with different wavelengths from injection parts formed at one end of a plurality of optical waveguides, which satisfy phase matching conditions different from one another and are formed in the vicinity of the surface of a substrate, are converted simultaneously, and the first and second laser beams are emitted from emission parts formed at substantially the same position at the other end of the optical waveguides. This enables an optimum optical system for high density recording and reproduction to be obtained.
    • 当记录和再现包括第一记录层的第一记录介质的第一激光束的波长被指示为λ1(nm)时,包括第二记录层的第二记录介质的第二激光束的波长为 记录和再现为λ2(nm),波长λ1和波长λ2之间的关系被设置为由10≤λ1-λ2 |≤120表示。 第一记录层相对于波长λ1具有至少1.0的光吸收率。 在记录层处于结晶状态和非晶状态的情况下,第一记录介质相对于波长λ2的透光率被设定为至少30。 为了记录和再现具有上述特性的光学多层盘,使用具有以下构造的多波长光源。 同时转换与形成在多个光波导的一端的注入部分不同的波长的波长的波长,其满足彼此不同并且形成在基板表面附近的相位匹配条件,并且第一 并且第二激光束从形成在光波导的另一端处的基本相同位置处的发射部分发射。 这使得能够获得用于高密度记录和再现的最佳光学系统。
    • 27. 发明授权
    • Method of making optical wavelength converting device
    • 制造光波长转换装置的方法
    • US5836073A
    • 1998-11-17
    • US548035
    • 1995-10-25
    • Kiminori MizuuchiKazuhisa YamamotoHisanao Sato
    • Kiminori MizuuchiKazuhisa YamamotoHisanao Sato
    • G02F1/35G02F1/355G02F1/377H01P11/00
    • G02F1/3558G02F1/3775G02F2001/3546G02F2001/3548G02F2201/346G02F2202/20Y10T29/49016
    • An optical wavelength converting device is provided with a LiTaO.sub.3 substrate, a plurality of inverted-polarization layers periodically arranged in an upper surface of the LiTaO.sub.3 substrate, and an optical waveguide crossing the inverted-polarization layers. The upper surface of the LiTaO.sub.3 substrate is directed toward a -X-crystal axis direction. The inverted-polarization layers are formed by exchanging Ta.sup.+ ions of the LiTaO.sub.3 substrate for H.sup.+ ions, and an extending direction of each inverted-polarization layer is inclined at an angle of .theta. degrees (6.ltoreq..theta..ltoreq.174) to the +C-crystal axis direction toward a -Y-crystal axis direction. The optical waveguide is formed by exchanging Ta.sup.+ ions of the LiTaO.sub.3 substrate and the inverted-polarization layers for H.sup.+ ions to set a refractive index of the optical waveguide higher than that of the LiTaO.sub.3 substrate. The optical waveguide extends in a +Y-crystal axis direction. Fundamental waves polarized in a transverse electric mode induce electric field directed in .+-.Y-crystal axis directions and are converted into second harmonic waves in the optical waveguide.
    • 光波长转换装置设置有LiTaO 3衬底,周期性地布置在LiTaO 3衬底的上表面中的多个倒置极化层和与反极化层交叉的光波导。 LiTaO3基板的上表面朝向-X晶轴方向。 反相极化层是通过交换Li + TaO 3衬底的H +离子的Ta +离子形成的,并且每个反向偏振层的延伸方向以θ度(6°= 174°)的角度倾斜到 + C晶轴方向朝向-Y晶轴方向。 通过交换LiTaO 3衬底的Ta +离子和H +离子的反向偏振层来形成光波导,以使光波导的折射率高于LiTaO 3衬底的折射率。 光波导沿+ Y晶轴方向延伸。 在横向电模式中极化的基波感应在+/- Y晶轴方向上引导的电场,并在光波导中转换成二次谐波。
    • 29. 发明授权
    • Short-wavelength light generating apparatus
    • 短波长发光装置
    • US5301059A
    • 1994-04-05
    • US20335
    • 1993-02-19
    • Yasuo KitaokaKazuhisa YamamotoKiminori MizuuchiMakoto KatoFumihiro Sogawa
    • Yasuo KitaokaKazuhisa YamamotoKiminori MizuuchiMakoto KatoFumihiro Sogawa
    • H01S3/0941H01S3/109H01S5/06H01S5/10H01S5/14G02F1/35
    • H01S5/141H01S3/08009H01S3/109H01S5/005H01S5/0092H01S5/143
    • A short-wavelength light generating apparatus comprising a pumping semiconductor laser and an intra-cavity solid state laser, the intra-cavity solid state laser is excited in response to a laser light beam from the semiconductor laser to generate a short-wavelength light beam to an external. Also included in the apparatus is an external grating mirror having on its one surface a reflection type diffraction grating and placed between the semiconductor laser and the intra-cavity solid state laser. The external grating mirror reflects the laser light beam from the semiconductor laser to feedback a portion of the laser light beam to said semiconductor laser so that an oscillated wavelength of the semiconductor laser becomes within a wavelength acceptance of the intra-cavity solid state laser. Further, the external grating mirror supplies a portion of the laser light beam from the semiconductor laser to the intra-cavity solid state laser. This arrangement can output a stable harmonic wave with a high efficiency.
    • 一种包括泵浦半导体激光器和腔内固体激光器的短波长发光装置,响应于来自半导体激光器的激光束激发腔内固态激光器,以产生短波长光束 外部的。 该装置中还包括外置光栅镜,其一面具有反射型衍射光栅,并设置在半导体激光器和腔内固态激光器之间。 外部光栅镜反射来自半导体激光器的激光束,以将激光束的一部分反射到所述半导体激光器,使得半导体激光器的振荡波长变得在腔内固态激光器的波长接受范围内。 此外,外部光栅镜将激光束的一部分从半导体激光器提供给腔内固态激光器。 这种布置可以以高效率输出稳定的谐波。