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21. 发明授权

US09650726B2 Methods and apparatus for deposition processes 有权
公开(公告)号：US09650726B2
公开(公告)日：2017-05-16
申请号：US13028842
申请日：2011-02-16
申请人： Nyi O. Myo , Kevin Bautista , Zhiyuan Ye , Schubert S. Chu , Yihwan Kim
发明人： Nyi O. Myo , Kevin Bautista , Zhiyuan Ye , Schubert S. Chu , Yihwan Kim
IPC分类号： C30B21/02 , C30B25/12 , C23C16/458 , H01L21/687
CPC分类号： C30B25/12 , C23C16/4586 , H01L21/68735 , H01L21/68742
摘要： Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.

22. 发明授权

US07748400B2 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US07748400B2
公开(公告)日：2010-07-06
申请号：US12500314
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.
摘要翻译：实施例涉及包含旁路管线和阀门的安瓿组件。在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一个截止阀，以及另一截止阀，其设置在安瓿主体和断开出口管路上的接头。

23. 发明授权

US08951478B2 Ampoule with a thermally conductive coating 有权
标题翻译：具有导热涂层的安瓿
公开(公告)号：US08951478B2
公开(公告)日：2015-02-10
申请号：US11960212
申请日：2007-12-19
申请人： Schubert S. Chu , Christophe Marcadal , Seshadri Ganguli , Norman M. Nakashima , Dien-Yeh Wu
发明人： Schubert S. Chu , Christophe Marcadal , Seshadri Ganguli , Norman M. Nakashima , Dien-Yeh Wu
IPC分类号： B01J10/00 , C23C16/448
CPC分类号： C23C16/4482 , C23C16/4481
摘要： Embodiments of the invention provide an apparatus and a process for generating a chemical precursor used in a vapor deposition processing system. The apparatus includes a canister (e.g., ampoule) having a sidewall, a top, and a bottom encompassing an interior volume therein, inlet and outlet ports in fluid communication with the interior volume, and a thermally conductive coating disposed on or over the outside surface of the canister. The thermally conductive coating is more thermally conductive than the outside surface of the canister. The thermally conductive coating may contain aluminum, aluminum nitride, copper, brass, silver, titanium, silicon nitride, or alloys thereof. In some embodiments, an adhesion layer (e.g., titanium or tantalum) may be disposed between the outside surface of the canister and the thermally conductive coating. In other embodiments, the canister may contain a plurality of baffles or solid heat-transfer particles to help evenly heat a solid precursor therein.
摘要翻译：本发明的实施方案提供了用于产生在气相沉积处理系统中使用的化学前体的装置和方法。该装置包括具有侧壁，顶部和底部的罐（例如，安瓿），其内部容纳有内部容积，与内部空间流体连通的入口和出口以及设置在外表面上或上方的导热涂层的罐子。导热涂层比罐的外表面更加导热。导热涂层可以含有铝，氮化铝，铜，黄铜，银，钛，氮化硅或其合金。在一些实施例中，粘合层（例如，钛或钽）可以设置在罐的外表面和导热涂层之间。在其它实施例中，罐可以包含多个挡板或固体传热颗粒以帮助均匀地加热其中的固体前体。

24. 发明授权

US08815724B2 Process for forming cobalt-containing materials 有权
标题翻译：用于形成含钴材料的方法
公开(公告)号：US08815724B2
公开(公告)日：2014-08-26
申请号：US13452237
申请日：2012-04-20
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

25. 发明授权

US07780789B2 Vortex chamber lids for atomic layer deposition 有权
标题翻译：涡流室盖用于原子层沉积
公开(公告)号：US07780789B2
公开(公告)日：2010-08-24
申请号：US11923589
申请日：2007-10-24
申请人： Dien-Yeh Wu , Puneet Bajaj , Xiaoxiong Yuan , Steven H. Kim , Schubert S. Chu , Paul F. Ma , Joseph F. Aubuchon
发明人： Dien-Yeh Wu , Puneet Bajaj , Xiaoxiong Yuan , Steven H. Kim , Schubert S. Chu , Paul F. Ma , Joseph F. Aubuchon
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.
摘要翻译：本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。在一个实施例中，提供了一种用于处理衬底的腔室，其包括腔室盖组件，该室盖组件包含沿腔室盖组件的中心部分处的中心轴线延伸的扩张通道，以及从膨胀通道延伸到周边部分的锥形底面室盖组件。锥形底表面的形状和尺寸可以基本上覆盖基板接收表面。腔室盖组件还包括连接到气体通道的导管，另一导管与另一个气体通道连接，两个气体通道绕过扩张通道。每个通道具有延伸到扩张通道中的多个入口，并且入口被定位成提供通过膨胀通道的圆形气流。

26. 发明申请

US20100006167A1 CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 有权
标题翻译：化学输送装置用于CVD或ALD
公开(公告)号：US20100006167A1
公开(公告)日：2010-01-14
申请号：US12500319
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K21/00
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.
摘要翻译：本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线在入口管线和出口管线之间。在一些实施例中，安瓿组件可以包含断开配件。在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

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