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21. 发明授权

US07387676B2 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
标题翻译：具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片
公开(公告)号：US07387676B2
公开(公告)日：2008-06-17
申请号：US11452870
申请日：2006-06-14
申请人： Wilfried von Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
发明人： Wilfried von Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
IPC分类号： C30B15/00
CPC分类号： C30B15/203 , C30B29/06
摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.
摘要翻译：在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比值V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩该区域的尺寸不再超过临界尺寸。在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

22. 发明授权

US08475592B2 Method for producing a single crystal of semiconductor material 有权
标题翻译：半导体材料单晶的制造方法
公开(公告)号：US08475592B2
公开(公告)日：2013-07-02
申请号：US12539011
申请日：2009-08-11
申请人： Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
发明人： Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
IPC分类号： C30B11/00 , C30B9/00 , C30B17/00 , C30B21/02 , C30B28/06 , C30B35/00
CPC分类号： C30B11/006 , C30B11/001 , C30B11/003 , C30B11/02 , C30B11/10 , C30B13/08 , C30B13/20 , C30B29/06 , Y10T117/10 , Y10T117/1024 , Y10T117/1088 , Y10T117/1092
摘要： A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.
摘要翻译：半导体材料的单晶通过利用第一感应加热线圈在具有由半导体材料构成的流出管的盘子上熔化半导体材料颗粒的方法来制造，从而形成从运行中延伸的熔融颗粒的熔体以熔体颈部的形式将熔融的腰部熔化成相边界，通过第二感应加热线圈向熔体输送热量，第二感应加热线圈具有熔体颈部通过的开口，使熔体在相边界处结晶并且将冷却气体输送到流出管和熔融颈部，以便控制流出管和熔融颈部之间的界面的轴向位置。

23. 发明申请

US20110126757A1 Method For Pulling A Single Crystal Composed Of Silicon With A Section Having A Diameter That Remains Constant 有权
标题翻译：用于将具有保持恒定直径的部分的由硅组成的单晶拉出的方法
公开(公告)号：US20110126757A1
公开(公告)日：2011-06-02
申请号：US12913964
申请日：2010-10-28
申请人： Thomas Schroeck , Wilfried von Ammon , Claus Kropshofer
发明人： Thomas Schroeck , Wilfried von Ammon , Claus Kropshofer
IPC分类号： C30B15/22 , C30B15/14
CPC分类号： C30B29/06 , C30B15/22 , C30B15/305 , C30B30/04
摘要： Single crystal composed of silicon with a section having a diameter that remains constant, are pulled by a method wherein the single crystal is pulled with a predefined pulling rate vp having the units [mm/min]; and the diameter of the single crystal in the section having a diameter that remains constant is regulated to the predefined diameter by regulating the heating power of a first heating source which supplies heat to the single crystal and to a region of the melt that adjoins the single crystal and is arranged above the melt, such that diameter fluctuations are corrected with a period duration T that is not longer than (2·18 mm)/vp.
摘要翻译：由具有保持恒定直径的部分的硅构成的单晶通过其中以具有单位[mm / min]的预定拉伸速率vp拉动单晶的方法被拉伸; 并且具有保持恒定直径的截面中的单晶的直径通过调节向单晶提供热量的第一加热源和与单晶相邻的熔体区域的加热功率而调节到预定直径并且布置在熔体上方，使得直径波动以不长于（2.18mm）/ vp的周期T来校正。

24. 发明申请

US20100037815A1 Method For Producing A Single Crystal Of Semiconductor Material 有权
标题翻译：生产半导体材料单晶的方法
公开(公告)号：US20100037815A1
公开(公告)日：2010-02-18
申请号：US12539011
申请日：2009-08-11
申请人： Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
发明人： Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
IPC分类号： C30B9/00
CPC分类号： C30B11/006 , C30B11/001 , C30B11/003 , C30B11/02 , C30B11/10 , C30B13/08 , C30B13/20 , C30B29/06 , Y10T117/10 , Y10T117/1024 , Y10T117/1088 , Y10T117/1092
摘要： A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.
摘要翻译：半导体材料的单晶通过利用第一感应加热线圈在具有由半导体材料构成的流出管的盘子上熔化半导体材料颗粒的方法来制造，从而形成从运行中延伸的熔融颗粒的熔体以熔体颈部的形式将熔融的腰部熔化成相边界，通过第二感应加热线圈向熔体输送热量，第二感应加热线圈具有熔体颈部通过的开口，使熔体在相边界处结晶并且将冷却气体输送到流出管和熔融颈部，以便控制流出管和熔融颈部之间的界面的轴向位置。

25. 发明授权

US06171395B2 Process and heating device for melting semiconductor material 有权
标题翻译：用于熔化半导体材料的工艺和加热装置
公开(公告)号：US06171395B2
公开(公告)日：2001-01-09
申请号：US09203266
申请日：1998-12-01
申请人： Wilfried von Ammon , Erich Tomzig , Paul Fuchs
发明人： Wilfried von Ammon , Erich Tomzig , Paul Fuchs
IPC分类号： C30B2814
CPC分类号： C30B15/14 , C30B15/00 , C30B15/02 , Y10T117/10 , Y10T117/1016 , Y10T117/1068
摘要： The invention relates to a process for melting semiconductor material in a crucible which is located in a container, and is enclosed by a fixed heating device. The invention also relates to a heating device which is suitable for carrying out the process. The process is one wherein a heater of a displaceable heating device is lowered from a lock chamber above the container through an open shut-off valve into the container in the direction of the semiconductor material, and the semiconductor material is melted using the fixed heating device and the lowered heater. The heater is then raised back out of the container into the lock chamber after the semiconductor material has been melted. A door is provided in the lock chamber to allow the displaceable heater to be removed after the semiconductor material has been melted.
摘要翻译：本发明涉及一种在坩埚中熔化半导体材料的方法，该方法位于容器中，由固定的加热装置封闭。本发明还涉及一种适用于进行该加工的加热装置。该过程是其中可移动加热装置的加热器从容器上方的锁定室通过打开的截止阀沿着半导体材料的方向降入容器中，并且半导体材料使用固定加热装置和下降的加热器。然后在半导体材料熔化之后，将加热器从容器中提回到锁定室中。在锁定室中设置门，以允许可移动的加热器在半导体材料熔化之后被去除。

26. 发明授权

US5487354A Method for pulling a silicon single crystal 失效
标题翻译：拉硅单晶的方法
公开(公告)号：US5487354A
公开(公告)日：1996-01-30
申请号：US349397
申请日：1994-12-05
申请人： Wilfried von Ammon , Erich Dornberger , Hans Oelkrug , Peter Gerlach , Franz Segieth
发明人： Wilfried von Ammon , Erich Dornberger , Hans Oelkrug , Peter Gerlach , Franz Segieth
IPC分类号： C30B15/22 , C30B15/00 , C30B29/06 , H01L21/208 , C30B15/10
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1052
摘要： A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.
摘要翻译：拉伸硅单晶的方法具有以相对于保持在坩埚中的硅熔体的垂直方向上的最大拉伸速度限定的速度拉伸单晶。最大牵引速度的值与生长的单晶中的轴向温度梯度近似成比例。

27. 发明授权

US08906157B2 Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant 有权
标题翻译：用直径保持恒定的部分拉出由硅组成的单晶的方法
公开(公告)号：US08906157B2
公开(公告)日：2014-12-09
申请号：US12913964
申请日：2010-10-28
申请人： Thomas Schroeck , Wilfried von Ammon , Claus Kropshofer
发明人： Thomas Schroeck , Wilfried von Ammon , Claus Kropshofer
IPC分类号： C30B15/02 , C30B30/04 , C30B15/30 , C30B29/06 , C30B15/22
CPC分类号： C30B29/06 , C30B15/22 , C30B15/305 , C30B30/04
摘要： Single crystal composed of silicon with a section having a diameter that remains constant, are pulled by a method wherein the single crystal is pulled with a predefined pulling rate vp having the units [mm/min]; and the diameter of the single crystal in the section having a diameter that remains constant is regulated to the predefined diameter by regulating the heating power of a first heating source which supplies heat to the single crystal and to a region of the melt that adjoins the single crystal and is arranged above the melt, such that diameter fluctuations are corrected with a period duration T that is not longer than (2·18 mm)/vp.
摘要翻译：由具有保持恒定直径的部分的硅构成的单晶通过其中以具有单位[mm / min]的预定拉伸速率vp拉动单晶的方法被拉伸; 并且具有保持恒定直径的截面中的单晶的直径通过调节向单晶提供热量的第一加热源和与单晶相邻的熔体区域的加热功率而调节到预定直径并且布置在熔体上方，使得直径波动以不长于（2.18mm）/ vp的周期T来校正。

28. 发明授权

US08834627B2 Method for producing a single crystal composed of silicon by remelting granules 有权
标题翻译：通过重熔粒子制造由硅构成的单晶的方法
公开(公告)号：US08834627B2
公开(公告)日：2014-09-16
申请号：US12913970
申请日：2010-10-28
申请人： Wilfried von Ammon , Ludwig Altmannshofer , Martin Wasner
发明人： Wilfried von Ammon , Ludwig Altmannshofer , Martin Wasner
IPC分类号： C30B9/04 , C30B29/06 , C30B13/20
CPC分类号： C30B13/20 , C30B29/06
摘要： Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm.
摘要翻译：通过利用设置在由硅组成的旋转板下方的感应加热线圈结晶单晶的锥形延伸部分，通过重新熔化硅颗粒的方法来生长硅单晶; 通过板中的锥形管馈送感应熔融的硅，管包围板的中心开口并在板下方延伸到位于单晶的锥形延伸部分处的熔体，其与锥形管的管端接触其中，通过板下方的感应加热线圈，提供足够的能量以确保管端的外径不小于15mm，只要单晶的锥形延伸部分的直径为15至 30毫米。

29. 发明授权

US08454746B2 Method for producing a single crystal composed of silicon using molten granules 有权
标题翻译：使用熔融颗粒生产由硅组成的单晶的方法
公开(公告)号：US08454746B2
公开(公告)日：2013-06-04
申请号：US13008053
申请日：2011-01-18
申请人： Wilfried von Ammon , Ludwig Altmannshofer
发明人： Wilfried von Ammon , Ludwig Altmannshofer
IPC分类号： C30B13/00 , C30B15/06 , C30B11/00 , C30B15/02 , C30B29/06
CPC分类号： C30B13/00 , C30B11/00 , C30B13/20 , C30B13/26 , C30B13/30 , C30B13/32 , C30B15/02 , C30B15/06 , C30B29/06 , Y10T117/1056
摘要： Silicon single crystals are prepared from molten granules, by producing a first volume of molten silicon between a growing single crystal and the lower end of a silicon conical tube which is closed at its lower end, and encloses a central opening of a rotating silicon plate below which the tube extends, by means of a first induction heating coil arranged below the plate; producing a second volume of molten silicon by a second induction heating coil arranged above the plate; melting the lower end of the tube to form a passage for the second volume of molten silicon, the passage produced at a point in time when the second volume is not yet present or is less than double the volume of the first volume; and crystallizing monocrystalline silicon on the growing single crystal with consumption of molten silicon from the first and the second volume.
摘要翻译：由熔融颗粒制备硅单晶，通过在生长的单晶和在其下端封闭的硅锥形管的下端之间产生第一体积的熔融硅，并且在下面包围旋转硅板的中心开口通过布置在板下方的第一感应加热线圈，管延伸; 通过布置在板上方的第二感应加热线圈产生第二体积的熔融硅; 熔化管的下端以形成用于第二体积的熔融硅的通道，该通道在第二体积不存在的时间点或者小于第一体积的体积的两倍时产生; 并且在生长的单晶上结晶单晶硅，并从第一和第二体积消耗熔融硅。

30. 发明申请

US20110095018A1 Device For Producing A Single Crystal Composed Of Silicon By Remelting Granules 审中-公开
标题翻译：通过重熔颗粒制造由硅组成的单晶的装置
公开(公告)号：US20110095018A1
公开(公告)日：2011-04-28
申请号：US12910906
申请日：2010-10-25
申请人： Wilfried von Ammon , Ludwig Altmannshofer , Andris Muiznieks
发明人： Wilfried von Ammon , Ludwig Altmannshofer , Andris Muiznieks
IPC分类号： H05B6/10
CPC分类号： C30B13/20 , C30B29/06 , H05B3/36 , H05B6/10
摘要： A device for producing a silicon single crystal by remelting granules has a rotating plate of silicon having a central opening and having a silicon tubular extension which encloses the opening and extends below the plate; a first induction heating coil above the plate for melting granules; and a second induction heating coil below the plate for crystallizing the molten granules, wherein the second induction heating coil has, on its side lying opposite the silicon plate, a lower layer composed of a magnetically permeable material and an upper layer in which there is at least one cooling channel for conducting a coolant.
摘要翻译：通过重熔颗粒制造硅单晶的装置具有一个具有中心开口的硅旋转板，并具有一个包围该开口并延伸到板下方的硅管延伸部; 板上方的第一感应加热线圈用于熔化颗粒; 以及在所述板下面的用于使所述熔融颗粒结晶的第二感应加热线圈，其中所述第二感应加热线圈在与所述硅板相对的一侧上具有由导磁材料和上层组成的下层，至少一个用于传导冷却剂的冷却通道。

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