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    • 22. 发明授权
    • Compressively stressed FET device structures
    • 压应力FET器件结构
    • US08278175B2
    • 2012-10-02
    • US12813311
    • 2010-06-10
    • Kangguo ChengBruce B. DorisAli KhakifiroozPranita KulkarniGhavam G. Shahidi
    • Kangguo ChengBruce B. DorisAli KhakifiroozPranita KulkarniGhavam G. Shahidi
    • H01L21/335
    • H01L21/823431H01L21/823412H01L21/823807H01L21/823821H01L29/66795H01L29/7843H01L29/7846H01L29/785
    • Methods for fabricating FET device structures are disclosed. The methods include receiving a fin of a Si based material, and converting a region of the fin into an oxide element. The oxide element exerts pressure onto the fin where a Fin-FET device is fabricated. The exerted pressure induces compressive stress in the device channel of the Fin-FET device. The methods also include receiving a rectangular member of a Si based material and converting a region of the member into an oxide element. The methods further include patterning the member that N fins are formed in parallel, while being abutted by the oxide element, which exerts pressure onto the N fins. Fin-FET devices are fabricated in the compressed fins, which results in compressively stressed device channels. FET devices structures are also disclosed. An FET devices structure has a Fin-FET device with a fin of a Si based material. An oxide element is abutting the fin and exerts pressure onto the fin. The Fin-FET device channel is compressively stressed due to the pressure on the fin. A further FET device structure has Fin-FET devices in a row each having fins. An oxide element extending perpendicularly to the row of fins is abutting the fins and exerts pressure onto the fins. Device channels of the Fin-FET devices are compressively stressed due to the pressure on the fins.
    • 公开了用于制造FET器件结构的方法。 所述方法包括接收Si基材料的翅片,以及将鳍片的区域转换为氧化物元件。 氧化物元件在制造Fin-FET器件的鳍片上施加压力。 施加的压力在Fin-FET器件的器件沟道中引起压应力。 所述方法还包括接收Si基材料的矩形构件并将所述构件的区域转换为氧化物元件。 所述方法进一步包括在与N个翅片施加压力的同时被N型翅片平行地形成的构件图案化。 Fin-FET器件制造在压缩鳍片中,这导致压缩应力器件通道。 还公开了FET器件结构。 FET器件结构具有具有Si基材料的翅片的Fin-FET器件。 氧化物元件邻接翅片并对翅片施加压力。 Fin-FET器件通道由于鳍上的压力而受到压缩应力。 另外的FET器件结构具有各自具有鳍片的Fin-FET器件。 垂直于翅片排延伸的氧化物元件邻接散热片并对翅片施加压力。 Fin-FET器件的器件通道由于鳍片上的压力而受到压缩应力。