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21. 发明申请

US20080012466A1 FIELD EMISSION DEVICE 审中-公开
标题翻译：场发射装置
公开(公告)号：US20080012466A1
公开(公告)日：2008-01-17
申请号：US11560793
申请日：2006-11-16
申请人： YUAN-CHAO YANG , YANG WEI , LIANG LIU , KAI-LI JIANG , SHOU-SHAN FAN
发明人： YUAN-CHAO YANG , YANG WEI , LIANG LIU , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： H01J1/00 , H01J19/06
CPC分类号： H01J9/025 , B82Y10/00 , H01J31/123 , H01J2201/30469 , H01J2329/86
摘要： A field emission device (10) includes a sealed container (12) with a light permeable portion (120). A phosphor layer (14) and a light permeable anode (16) are coated on inside surface of the light permeable portion in succession. A cathode (18) is enclosed in the sealed container. A carbon nanotube yarn is attached to the cathode facing the light permeable portion. Before being embedded into the sealed container, the carbon nanotube yarn is processed in the following steps: providing a carbon nanotube array, drawing out at least one carbon nanotube yarn string from the carbon nanotube array, treating the at least one carbon nanotube yarn string using an organic solvent in a manner such that the at least one carbon nanotube yarn string is formed into a single strand of carbon nanotube yarn, and heating the single strand of the carbon nanotube yarn.
摘要翻译：场致发射装置（10）包括具有透光部分（120）的密封容器（12）。荧光体层（14）和透光阳极（16）依次涂覆在透光部分的内表面上。阴极（18）封装在密封容器中。将碳纳米管丝附接到面向透光部的阴极。在嵌入密封容器中之前，以下列步骤处理碳纳米管纱线：提供碳纳米管阵列，从碳纳米管阵列中抽出至少一个碳纳米管纱线串，使用有机溶剂，使得至少一个碳纳米管纱线串形成单股碳纳米管纱线，并加热碳纳米管纱线的单股。

22. 发明申请

US20120324724A1 METHOD FOR MAKING PHASE CHANGE MEMORY 有权
标题翻译：制造相变记忆的方法
公开(公告)号：US20120324724A1
公开(公告)日：2012-12-27
申请号：US13332486
申请日：2011-12-21
申请人： PENG LIU , QUN-QING LI , KAI-LI JIANG , SHOU-SHAN FAN
发明人： PENG LIU , QUN-QING LI , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： H05K3/30
CPC分类号： H01L45/06 , H01L45/126 , H01L45/144
摘要： A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.
摘要翻译：提供了一种制造相变存储器的方法。该方法包括以下步骤。提供基板。多个第一行电极引线和第二行电极引线位于基板上。在基板上涂布碳纳米管层以覆盖第一行电极引线和第二行电极引线。图案化碳纳米管层以形成位于第二行电极引线上的多个碳纳米管单元。在每个碳纳米管单元的表面上施加相变层。多个第一电极，多个第二电极，多个第一行电极引线和多个第二行电极引线位于基板上。

23. 发明申请

US20120326109A1 PHASE CHANGE MEMORY CELL AND PHASE CHAGE MEMORY 有权
标题翻译：相变存储器单元和相位存储器
公开(公告)号：US20120326109A1
公开(公告)日：2012-12-27
申请号：US13332480
申请日：2011-12-21
申请人： PENG LIU , QUN-QING LI , KAI-LI JIANG , SHOU-SHAN FAN
发明人： PENG LIU , QUN-QING LI , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1206 , H01L45/1286 , H01L45/144
摘要： A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit comprises a third electrode, a phase change layer and a fourth electrode electrically connected in series, at least part of the phase change layer is overlapped with the carbon nanotube layer. The second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell.
摘要翻译：相变存储单元包括第一电路和第二电路。第一电路包括第一电极，碳纳米管层和串联电连接的第二电极。第一电路适于将数据写入相变存储单元或复位相变存储单元。第二电路包括第三电极，相变层和串联电连接的第四电极，至少部分相变层与碳纳米管层重叠。第二电路适于从相变存储单元读取数据或者复位相变存储单元。

24. 发明申请

US20090250113A1 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20090250113A1
公开(公告)日：2009-10-08
申请号：US12339353
申请日：2008-12-19
申请人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
发明人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
IPC分类号： H01L31/00
CPC分类号： H01L31/06 , H01L31/028 , H01L31/0352 , H01L31/0384 , H01L31/0745 , Y02E10/547
摘要： A solar cell includes a back electrode, a single crystal silicon substrate, and a carbon nanotube structure. The single crystal silicon substrate includes an upper surface and a lower surface. The back electrode is located on and electrically connected to the lower surface of the single crystal silicon substrate. The carbon nanotube structure is located on and connected to the upper surface of the single crystal silicon substrate. The carbon nanotube structure includes an upper surface and a lower surface.
摘要翻译：太阳能电池包括背电极，单晶硅衬底和碳纳米管结构。单晶硅衬底包括上表面和下表面。背面电极位于单晶硅衬底的下表面上并电连接到单晶硅衬底的下表面。碳纳米管结构位于单晶硅衬底的上表面并连接到单晶硅衬底的上表面。碳纳米管结构包括上表面和下表面。

25. 发明申请

US20120164372A1 CARBON NANOTUBE FILM STRUCTURE 审中-公开
标题翻译：碳纳米管膜结构
公开(公告)号：US20120164372A1
公开(公告)日：2012-06-28
申请号：US13411691
申请日：2012-03-05
申请人： XUE-SHEN WANG , QUN-QING LI , KAI-LI JIANG , SHOU-SHAN FAN
发明人： XUE-SHEN WANG , QUN-QING LI , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： B32B5/12 , B32B5/16 , B82Y99/00
CPC分类号： C01B31/0226 , B01J21/185 , B01J23/74 , B01J23/745 , B01J23/881 , B01J23/8906 , B01J37/0219 , B82Y30/00 , B82Y40/00 , C01B32/16 , C01B32/162 , C01B2202/02 , C01B2202/04 , C01B2202/06 , C01B2202/08 , C01B2202/34 , C01B2202/36 , C01P2004/13 , Y10S977/843 , Y10T428/24132 , Y10T428/249924
摘要： A carbon nanotube film structure includes at least one carbon nanotube film or at least two stacked carbon nanotube films. Each carbon nanotube film includes a plurality of carbon nanotubes parallel to the surface of the carbon nanotube film and parallel to each other. A length of the carbon nanotube is equal to or greater than 1 centimeter.
摘要翻译：碳纳米管膜结构包括至少一个碳纳米管膜或至少两个堆叠的碳纳米管膜。每个碳纳米管膜包括平行于碳纳米管膜的表面并且彼此平行的多个碳纳米管。碳纳米管的长度等于或大于1厘米。

26. 发明申请

US20090260679A1 PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20090260679A1
公开(公告)日：2009-10-22
申请号：US12339379
申请日：2008-12-19
申请人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
发明人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
IPC分类号： H01L31/00
CPC分类号： H01L31/0236 , B82Y20/00 , G02B6/1226 , H01L31/022425 , H01L31/022466 , H01L31/03529 , H01L31/068 , Y02E10/547
摘要： A photovoltaic device includes a substrate, a doped layer, a first electrode and a second electrode. The substrate has a plurality of cavities defined therein. The doped layer is in contact the substrate. The first electrode including a carbon nanotube composite material is adjacent to the substrate. The second electrode is attached to the substrate.
摘要翻译：光伏器件包括衬底，掺杂层，第一电极和第二电极。衬底具有限定在其中的多个空腔。掺杂层与衬底接触。包含碳纳米管复合材料的第一电极与基板相邻。第二电极附接到基板。

27. 发明申请

US20090223558A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20090223558A1
公开(公告)日：2009-09-10
申请号：US12339348
申请日：2008-12-19
申请人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
发明人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/035281 , H01L31/03529 , H01L31/0547 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a back electrode, a silicon substrate, a doped silicon layer and an upper electrode. The back electrode is located on and electrically connected to a lower surface of the silicon substrate. A number of cavities are formed on an upper surface of the silicon substrate. The doped silicon layer is located on the inside surface of the cavities. The upper electrode is located on the upper surface of the silicon substrate. The upper electrode includes a carbon nanotube structure.
摘要翻译：太阳能电池包括背面电极，硅衬底，掺杂硅层和上电极。背面电极位于并且电连接到硅衬底的下表面。在硅衬底的上表面上形成多个空腔。掺杂硅层位于空腔的内表面上。上电极位于硅衬底的上表面上。上部电极包括碳纳米管结构。

28. 发明申请

US20120315761A1 METHOD FOR MANUFACTURING NICKEL SILICIDE NANO-WIRES 有权
标题翻译：制造镍硅纳米线的方法
公开(公告)号：US20120315761A1
公开(公告)日：2012-12-13
申请号：US13588222
申请日：2012-08-17
申请人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
发明人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
IPC分类号： H01L21/768
CPC分类号： C01B33/06 , C30B23/00 , C30B29/10 , C30B29/60
摘要： A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.
摘要翻译：一种制造硅化镍纳米线的方法，该方法包括以下步骤。首先，提供硅衬底和生长装置，并且提供包括反应室的生长装置。其次，在硅衬底的表面上形成二氧化硅层。第三，在二氧化硅层上形成钛层。第四，将硅衬底放置在反应室中，并将反应室加热到500〜1000℃的温度。最后，在硅衬底的表面上形成多个镍簇。

29. 发明申请

US20090250107A1 PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20090250107A1
公开(公告)日：2009-10-08
申请号：US12339359
申请日：2008-12-19
申请人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
发明人： HAI-LIN SUN , KAI-LI JIANG , QUN-QING LI , SHOU-SHAN FAN
IPC分类号： H01L31/0216
CPC分类号： H01L31/0384 , H01L31/028 , H01L31/0352 , H01L31/06 , H01L31/0745 , Y02E10/547
摘要： A photovoltaic device includes a substrate, a first electrode and a carbon nanotube structure. The substrate has a front surface and a rear surface. The carbon nanotube structure is disposed on the front surface of the substrate. The first electrode is disposed on the rear surface of the substrate.
摘要翻译：光伏器件包括衬底，第一电极和碳纳米管结构。基板具有前表面和后表面。碳纳米管结构设置在基板的前表面上。第一电极设置在基板的后表面上。

30. 发明申请

US20090267000A1 METHOD OF MAKING TRANSPARENT CONDUCTIVE FILM 有权
标题翻译：制造透明导电膜的方法
公开(公告)号：US20090267000A1
公开(公告)日：2009-10-29
申请号：US12339341
申请日：2008-12-19
申请人： ZHUO CHEN , KAI-LI JIANG , SHOU-SHAN FAN
发明人： ZHUO CHEN , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： A61N5/00
CPC分类号： H01B1/04 , Y10S977/742 , Y10S977/788 , Y10S977/789 , Y10S977/842 , Y10S977/89 , Y10S977/90 , Y10S977/901
摘要： A method of making a transparent conductive film includes the steps of: providing a carbon nanotube array. At least one carbon nanotube film extracted from the carbon nanotube array. The carbon nanotube films are stacked on the substrate to form a carbon nanotube film structure. The carbon nanotube film structure is irradiated by a laser beam along a predetermined path to obtain a predetermined pattern. The predetermined pattern is separated from the other portion of the carbon nanotube film, thereby forming the transparent conductive film from the predetermined pattern of the carbon nanotube film.
摘要翻译：制造透明导电膜的方法包括以下步骤：提供碳纳米管阵列。从碳纳米管阵列提取的至少一个碳纳米管薄膜。碳纳米管膜层叠在基板上，形成碳纳米管膜结构体。碳纳米管膜结构沿预定路径被激光束照射以获得预定图案。将预定图案与碳纳米管膜的另一部分分离，从而从碳纳米管膜的预定图案形成透明导电膜。

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