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    • 21. 发明授权
    • Method of driving reverse conducting semiconductor device, semiconductor device and power supply device
    • 驱动反向导通半导体器件,半导体器件和电源器件的方法
    • US08248116B2
    • 2012-08-21
    • US12867591
    • 2009-02-14
    • Akitaka SoenoJun Saito
    • Akitaka SoenoJun Saito
    • H03K3/00
    • H01L29/7397H01L29/0834H03K17/08128H03K17/567H03K2217/0036H03K2217/0045
    • A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.
    • 提供一种用于反向导电半导体器件的技术,其包括利用具有相互杂质浓度的体区的IGBT元件区域和二极管元件区域,这使得可以调节空穴或电子到二极管元件区域的注入效率。 当返回电流在使用NPNP型IGBT的反向导通半导体器件中流动时,将高于发射极电压的第二电压施加到二极管元件区域的第二沟槽栅电极。 N型反型层形成在第二沟槽栅电极的周围,并且电子通过第一体接触区域和n型相同的漂移区域流过。 电子向返回电流的注入效率提高,并且孔的注入效率降低。 由此,可以防止反向恢复电流的增加,并且可以降低二极管元件区域中引起的开关损耗。
    • 22. 发明申请
    • METHOD FOR PRODUCING A USEFUL SUBSTANCE BY USE OF AN IMMOBILIZED ENZYME
    • 通过使用固定化酶生产有用物质的方法
    • US20090298142A1
    • 2009-12-03
    • US12067664
    • 2006-10-04
    • Jun SaitoYoshitaka SendaToshiteru Komatsu
    • Jun SaitoYoshitaka SendaToshiteru Komatsu
    • C12P7/64C12P1/00
    • C12N9/20C12N11/00C12P7/6418
    • The present invention provides a method for producing a useful substance by supplying, to a fixed-bed reactor packed with an immobilized enzyme, a liquid mixture containing two liquid phases, in which the two liquid phases are allowed to flow in an identical, parallel direction, which method employs a fixed-bed reactor equipped with an insertion unit or tubes, so as to form a plurality of lumens in the fixed-bed reactor, each lumen having a cross section of a circular shape with a diameter of 100 mm or less or having a polygonal shape with a diagonal line of 100 mm or less, wherein the lumens are packed with an immobilized enzyme and the liquid mixture is supplied therethrough. In a reaction performed by passing a reaction mixture exhibiting two liquid phases through a fixed-bed reactor equipped with an immobilized enzyme, overall flow of the reaction liquid is made uniform, to thereby facilitate production of a useful substance in an efficient manner.
    • 本发明提供一种制造有用物质的方法,该方法通过向固定化酶反应器中填充固定化酶,提供含有两个液相的液体混合物,其中允许两个液相沿相同的平行方向流动 该方法采用装备有插入单元或固定床的固定床反应器,以在固定床反应器中形成多个内腔,每个管腔具有直径为100mm以下的圆形截面 或具有对角线为100mm或更小的多边形形状,其中,腔内填充有固定化酶,并且通过其提供液体混合物。 在通过使具有两个液相的反应混合物通过装有固定化酶的固定床反应器进行的反应中,使反应液体的整体流动均匀,从而有效地制备有用物质。
    • 24. 发明授权
    • CMOS device with trench structure
    • CMOS器件具有沟槽结构
    • US06642583B2
    • 2003-11-04
    • US10166575
    • 2002-06-11
    • Shinichi JimboJun Saito
    • Shinichi JimboJun Saito
    • H01L27092
    • H01L27/0921
    • A semiconductor device is provided having a high voltage driver IC reducing malfunction or device destruction. A high voltage IC chip includes a trench structure that surrounds each of two semiconductor regions at different electrical potentials. Specifically, a first semiconductor region forms a ground-potential-based circuit, and a high voltage junction terminating structure around a second semiconductor region forms a floating-potential-based circuit. A trench structure is formed after digging a trench by implanting a high concentration p+ region on a trench wall, or alternatively, by filling the trench with a p+ doped polysilicon or with a dielectric.
    • 提供了具有降低故障或器件破坏的高电压驱动器IC的半导体器件。 高压IC芯片包括围绕不同电位的两个半导体区域中的每一个的沟槽结构。 具体地,第一半导体区域形成基于地电位的电路,并且围绕第二半导体区域的高电压结端接结构形成基于浮置电位的电路。 通过在沟槽壁上注入高浓度p +区域,或者通过用p +掺杂多晶硅或电介质填充沟槽,在挖掘沟槽之后形成沟槽结构。
    • 27. 发明授权
    • Magnetooptical recording method and apparatus using multi-layered media
    • 磁光记录方法和使用多层介质的设备
    • US5539709A
    • 1996-07-23
    • US92686
    • 1993-07-16
    • Masatoshi SatoJun SaitoHideki Akasaka
    • Masatoshi SatoJun SaitoHideki Akasaka
    • G11B11/105G11B11/00
    • G11B11/10586G11B11/105G11B11/10506G11B11/10519G11B11/10521
    • A magnetooptical recording method for recording data using a bit having upward-magnetization and a bit having downward-magnetization on a recording layer of a magnetooptical recording medium comprises the steps of using, as the medium, a multilayered magnetic recording medium consisting of a first layer having a perpendicular magnetic anisotropy acting as a recording layer, and a second layer having a perpendicular magnetic anisotropy acting as a reference layer; moving the medium; applying an initial field so that, before recording, the direction of magnetization of the recording layer is left unchanged, and that of the reference layer is aligned either upward or downward; radiating a laser beam onto the medium; pulse modulating an intensity of the laser beam in accordance with binary data to be recorded; when the laser beam is radiated, applying a bias field to the irradiated portion; and when the intensity of the pulse-modulated laser beam is at high level, forming one of the bit having upward-magnetization and that having downward-magnetization, and when the intensity of the pulse-modulated laser beam is at low level, forming the other bit.
    • 使用具有向上磁化的位和在磁光记录介质的记录层上具有向下磁化的位的数据记录数据的磁光记录方法包括以下步骤:使用由第一层构成的多层磁记录介质 具有作为记录层的垂直磁各向异性,和具有作为参考层的垂直磁各向异性的第二层; 移动媒体; 施加初始场,使得在记录之前,记录层的磁化方向保持不变,并且参考层的磁化方向向上或向下排列; 将激光束照射到介质上; 根据要记录的二进制数据对激光束的强度进行脉冲调制; 当激光束被照射时,向照射部分施加偏置场; 并且当脉冲调制激光束的强度处于高电平时,形成具有向上磁化并具有向下磁化的位之一,并且当脉冲调制激光束的强度处于低电平时,形成 其他位
    • 29. 发明授权
    • Recording condition determination method and apparatus upon execution of
over-write operation on magnetooptical disk by heat shut off method and
pulse train method, and magnetooptical recording method and apparatus
    • 通过热切断方法和脉冲串方法对磁光盘执行过写操作的记录条件确定方法和装置以及磁光记录方法和装置
    • US5420837A
    • 1995-05-30
    • US141620
    • 1993-10-27
    • Jun SaitoShinichi Kurita
    • Jun SaitoShinichi Kurita
    • G11B7/0045G11B7/125G11B11/105G11B11/00
    • G11B7/126G11B11/10506G11B11/10521G11B11/1053G11B11/10595
    • In a magnetooptical recording method and apparatus the intensity of a laser beam to be radiated onto an over-write capable magnetooptical disk is raised from P.sub.L to an intensity P.sub.H higher than P.sub.L, the intensity is reduced to an intensity P.sub.LT lower than P.sub.H after P.sub.H is maintained for a time T.sub.W1, the laser beam is intensity-modulated at a period T.sub.p between P.sub.LT and an intensity P.sub.W2 higher than P.sub.LT so as to form a mark on the magnetooptical disk by a high-temperature cycle, thereafter, the intensity is reduced to an intensity P.sub.LB lower than P.sub.L, and the intensity is raised to P.sub.L after an elapse of a time T.sub.off. The intensity P.sub.L is selected from an intensity range defined between an upper limit and a lower limit. The upper limit is a laser beam intensity for maintaining a pre-heat state in which a temperature on the magnetooptical disk becomes a predetermined temperature .THETA..sub.pre, and is also an intensity which does not cause the high-temperature cycle. The lower limit is an intensity at which a mark formed by the high-temperature cycle can be erased. At least one of P.sub.L, T.sub.off, and P.sub.LB is controlled to achieve the pre-heat state within a time until the intensity is raised to P.sub.H again. At least one of P.sub.W2, P.sub.LT, and a time T.sub.W2 for maintaining P.sub.W2 is controlled, so that a temperature, after an elapse of T.sub.W1, at a peak temperature position or a spot center position of the laser beam radiated onto the magnetooptical disk surface becomes equal to a temperature after an elapse of T.sub.W2.
    • 在磁光记录方法和装置中,要辐射到可写入的磁光盘上的激光束的强度从PL升高到高于PL的强度PH,在PH为PH之后,强度降低到低于PH的强度PLT 维持一段时间TW1,激光束在PLT和PLT之间的时间间隔Tp被强度调制,以便在高温循环下在磁光盘上形成一个标记,其后强度降低到 强度PLB低于PL,并且在经过一段时间Toff之后将强度提高到PL。 强度PL从在上限和下限之间限定的强度范围中选择。 上限是用于维持磁光盘上的温度成为预定温度THETA pre的预热状态的激光束强度,也是不引起高温循环的强度。 下限是可以擦除由高温循环形成的标记的强度。 控制PL,Toff和PLB中的至少一个以在一段时间内实现预热状态,直到强度再次升高到PH。 控制PW2,PLT以及用于维持PW2的时间TW2中的至少一个,使得经过TW1之后在照射到磁光盘表面上的激光束的峰值温度位置或点中心位置处的温度变为 等于经过TW2后的温度。