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21. 发明授权

US06993983B2 Universal magnetostrictive force sensor 失效
标题翻译：通用磁致伸缩力传感器
公开(公告)号：US06993983B2
公开(公告)日：2006-02-07
申请号：US10313660
申请日：2002-12-06
申请人： Bruno Patrice Bernard Lequesne , Donald T. Morelli , Thaddeus Schroeder , Thomas Wolfgang Nehl , Thomas Allen Baudendistel
发明人： Bruno Patrice Bernard Lequesne , Donald T. Morelli , Thaddeus Schroeder , Thomas Wolfgang Nehl , Thomas Allen Baudendistel
IPC分类号： G01L1/12
CPC分类号： G01L1/127 , G01L1/125
摘要： A magnetostrictive force sensor universally usable in any environment with similar signals unaffected by the surrounding material. To this end, a sensor comprising a shaft of magnetostrictive material with an inductance coil wound around the shaft is provided with a magnetic shell enclosing the coil only or both the coil and the shaft. Upon application of the magnetic field, the resultant flow of magnetic flux is confined to a path through the shaft and the magnetic shell. By confining the magnetic flux path, the dependency of the sensor signal on the surrounding material and environment is essentially eliminated.
摘要翻译：一种磁致伸缩力传感器，可在任何环境中使用，具有不受周围材料影响的相似信号。为此，包括具有卷绕在轴上的电感线圈的磁致伸缩材料轴的传感器设置有只包围线圈或线圈和轴两者的磁性壳。在施加磁场时，所产生的磁通流被限制在通过轴和磁性壳的路径上。通过限制磁通路径，基本上消除了传感器信号对周围材料和环境的依赖性。

22. 发明授权

US06842014B2 Methods for determining inductance and resistance of an inductor 失效
标题翻译：确定电感的电感和电阻的方法
公开(公告)号：US06842014B2
公开(公告)日：2005-01-11
申请号：US10410858
申请日：2003-04-10
申请人： Thomas A. Baudendistel , Donald T. Morelli , Bruce Heaston , Curtis Cyran , Jeff A. Foust
发明人： Thomas A. Baudendistel , Donald T. Morelli , Bruce Heaston , Curtis Cyran , Jeff A. Foust
IPC分类号： G01R27/26 , G01R11/52
CPC分类号： G01R27/2611
摘要： A resistor (having a resistance of Rs) is connected in series with an inductor whose inductance and/or resistance is desired to be determined. An alternating voltage (such as a sinusoidal voltage) is applied across the series-connected resistor and inductor, wherein the alternating voltage has a frequency ω, a unique maximum or minimum value Vm, an average value and a unique crossover of the average value. The voltage Vr is measured across the resistor when the alternating voltage is at its maximum or minimum value. The voltage Vl is measured across the resistor when the alternating voltage is at its average value. The resistance RL of the inductor is calculated from an equation in which RL is a function of Vm, Vr, Rs and Vl. The inductance L of the inductor is calculated from an equation in which L is a function of Vl, Rl, Rs, Vr and ω.
摘要翻译：电阻器（具有Rs的电阻）与需要确定电感和/或电阻的电感器串联连接。交流电压（例如正弦电压）施加在串联的电阻和电感上，其中交流电压具有频率ω，独特的最大值或最小值Vm，平均值和平均值的唯一交叉。当交流电压处于其最大值或最小值时，跨电阻器测量电压Vr。当交流电压处于其平均值时，跨过电阻器测量电压V1。根据RL是Vm，Vr，Rs和V1的函数的方程计算电感器的电阻RL。电感的电感L由其中L是V1，R1，Rs，Vr和ω的函数的等式计算。

23. 发明授权

US06424529B1 High performance heat exchange assembly 有权
公开(公告)号：US06424529B1
公开(公告)日：2002-07-23
申请号：US09804741
申请日：2001-03-13
申请人： Gary Lynn Eesley , Donald T. Morelli , Mohinder Singh Bhatti
发明人： Gary Lynn Eesley , Donald T. Morelli , Mohinder Singh Bhatti
IPC分类号： H05K720
摘要： Heat sinks are provided that achieve very high convective heat transfer surface per unit volume. These heat sinks comprise a spreader plate, at least three fins and at least one porous reticulated foam block that fills the space between the fins.

24. 发明授权

US4939456A Position sensor including a thin film indium arsenide magnetoresistor on a permanent magnet 失效
标题翻译：位置传感器包括在永久磁铁上的薄膜砷化铟磁阻
公开(公告)号：US4939456A
公开(公告)日：1990-07-03
申请号：US426249
申请日：1989-10-25
申请人： Donald T. Morelli , Joseph P. Heremans , Dale L. Partin , Christopher M. Thrush , Louis Green
发明人： Donald T. Morelli , Joseph P. Heremans , Dale L. Partin , Christopher M. Thrush , Louis Green
IPC分类号： G01D5/14 , G01D5/16
CPC分类号： G01D5/147
摘要： For increased sensitivity, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor and the magnet face proximate the exciter includes a thin layer of ferromagnetic material over which is centered a narrow magnetic sensing element, such as a magnetoresistor. The sensing element has a width typically less than the tooth width. The sensing element includes a thin film of a monocrystalline semiconductive material, preferably having only a moderate bulk mobility and a larger band gap, such as indium arsenide. Current carriers flow along the length of the thin film in a surface accumulation layer, effective to provide a significant apparent increase in mobility and conductivity of said semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. The flux density is typically applied by appropriate magnet thickness or choice of magnet material without the need of a flux guide.
摘要翻译：为了提高灵敏度，改进的位置传感器包括一个磁路，其中固定部分包括永磁体，其宽度最好是传感器的激励器部分的齿距的1.5倍，并且靠近激励器的磁体面包括铁磁薄层其上以诸如磁电阻器的窄磁感应元件为中心的材料。感测元件具有通常小于齿宽度的宽度。感测元件包括单晶半导体材料的薄膜，优选仅具有适度的体迁移率和较大的带隙，例如砷化铟。电流载流子沿着表面积累层中的薄膜的长度流动，有效地提供所述半导体材料的迁移率和导电性的明显增加，并且磁敏感性和温度不敏感性的实际增加。磁通密度通常通过适当的磁体厚度或磁体材料的选择来施加，而不需要助焊剂引导。

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