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    • 22. 发明授权
    • Adaptive media playout method and apparatus for intra-media synchronization
    • 用于媒体内同步的自适应媒体播放方法和装置
    • US08351762B2
    • 2013-01-08
    • US12034360
    • 2008-02-20
    • Jong-Won KimSang-Hoon Park
    • Jong-Won KimSang-Hoon Park
    • G11B27/00
    • H04N19/44H04N21/44004H04N21/440281H04N21/44209H04N21/64322
    • Disclosed is a buffer-based adaptive media playout method in a receiver side of a network media streaming system. The method includes: calculating a playout interval for playing out a current j-th frame (where j is a natural number) of a received media stream; and playing out the current j-th frame after the calculated playout interval has elapsed from the reception of the current j-th frame. The calculation of the playout interval for playing out the current j-th frame of the received media stream includes: calculating a buffer level of a (j+w)-th frame (where w is a natural number); estimating a playout pause or a playout skip on the basis of the calculated buffer level; and calculating the playout interval for playing out the current j-th frame for the predicted one of the playout pause and the playout skip. According to the above-mentioned structure, it is possible to reduce the amount of temporal distortion, such as the RMSE value of playout discontinuity due to delay or jitter, as compared to the buffer-threshold-based media playout techniques according to the related art.
    • 公开了一种在网络媒体流系统的接收机侧的基于缓冲器的自适应媒体播放方法。 该方法包括:计算用于播放接收到的媒体流的当前第j帧(其中j是自然数)的播出间隔; 并且在从当前第j帧的接收经过计算的播出间隔之后播放当前的第j帧。 用于播放接收的媒体流的当前第j帧的播出间隔的计算包括:计算第(j + w)个帧(其中w是自然数)的缓冲器电平; 基于所计算的缓冲器级别来估计播出暂停或播出跳过; 以及计算用于播放播放暂停和播放跳过中的预测播放暂停的当前第j帧的播出间隔。 根据上述结构,与根据现有技术的基于缓冲器阈值的媒体播放技术相比,可以减少时间失真的量,诸如由于延迟或抖动引起的播出不连续性的RMSE值 。
    • 26. 发明授权
    • Methods for reducing void formation in semiconductor devices
    • 减少半导体器件中空隙形成的方法
    • US07273783B2
    • 2007-09-25
    • US11018778
    • 2004-12-21
    • Jong-Won KimJong-Ho ParkJung-Dal Choi
    • Jong-Won KimJong-Ho ParkJung-Dal Choi
    • H01L21/336
    • H01L27/115H01L27/11521
    • A method of forming a semiconductor device includes forming an insulating layer on a semiconductor substrate. The insulating layer has a trench therein with opposing sidewalls and a bottom surface. A first conductive layer is formed on the sidewalls and on the bottom surface of the trench to define a gap region. A portion of the first conductive layer is removed to thereby increase a width of the gap region. The first conductive layer may be removed from the sidewalls and the bottom surface of the trench such that an upper width of the gap region is greater than or equal to a lower width of the gap region. A second conductive layer is formed in the gap region after removing the portion of the first conductive layer to fill the gap region.
    • 形成半导体器件的方法包括在半导体衬底上形成绝缘层。 绝缘层在其中具有相对的侧壁和底面的沟槽。 第一导电层形成在沟槽的侧壁和底表面上以限定间隙区域。 去除第一导电层的一部分,从而增加间隙区域的宽度。 可以从沟槽的侧壁和底表面去除第一导电层,使得间隙区域的上部宽度大于或等于间隙区域的较低宽度。 在去除第一导电层的部分以填充间隙区域之后,在间隙区域中形成第二导电层。
    • 30. 发明申请
    • Methods for reducing void formation in semiconductor devices and related devices
    • 减少半导体器件和相关器件中空隙形成的方法
    • US20060030137A1
    • 2006-02-09
    • US11018778
    • 2004-12-21
    • Jong-Won KimJong-Ho ParkJung-Dal Choi
    • Jong-Won KimJong-Ho ParkJung-Dal Choi
    • H01L21/76
    • H01L27/115H01L27/11521
    • A method of forming a semiconductor device includes forming an insulating layer on a semiconductor substrate. The insulating layer has a trench therein with opposing sidewalls and a bottom surface. A first conductive layer is formed on the sidewalls and on the bottom surface of the trench to define a gap region. A portion of the first conductive layer is removed to thereby increase a width of the gap region. The first conductive layer may be removed from the sidewalls and the bottom surface of the trench such that an upper width of the gap region is greater than or equal to a lower width of the gap region. A second conductive layer is formed in the gap region after removing the portion of the first conductive layer to fill the gap region.
    • 形成半导体器件的方法包括在半导体衬底上形成绝缘层。 绝缘层在其中具有相对的侧壁和底面的沟槽。 第一导电层形成在沟槽的侧壁和底表面上以限定间隙区域。 去除第一导电层的一部分,从而增加间隙区域的宽度。 可以从沟槽的侧壁和底表面去除第一导电层,使得间隙区域的上部宽度大于或等于间隙区域的较低宽度。 在去除第一导电层的部分以填充间隙区域之后,在间隙区域中形成第二导电层。