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    • 21. 发明授权
    • Radio frequency modulator having C/L delay compensation function, and set-top-box using the same
    • 具有C / L延迟补偿功能的射频调制器,以及使用其的机顶盒
    • US07079194B2
    • 2006-07-18
    • US10367828
    • 2003-02-19
    • Jong Jin LeeSang Suk KimChae Dong GoYoun Joong LeeKyoung Soo Kwon
    • Jong Jin LeeSang Suk KimChae Dong GoYoun Joong LeeKyoung Soo Kwon
    • H04N5/40
    • H04N5/40H04N9/77H04N11/14
    • An RF modulator includes a C/L delay compensation function of compensating for a delay of a luminance signal with respect to a chrominance signal occurring during demodulating a video signal in a TV set. The RF modulator includes a C/L delay compensation unit delaying a luminance signal by 170 nsec and combining the delayed luminance signal with a chrominance signal to output a composite image signal having a C/l delay of −170 nsec and a frequency modulation unit modulating the video signal received from the C/L delay compensation unit into a high frequency signal of a predetermined broadcasting channel in a single module or package. The RF modulator outputs a video signal having the luminance signal delayed by 170 nsec with respect to the chrominance signal and complies with a C/L delay standard without adding any additional C/L delay compensation unit to the RF modulator.
    • RF调制器包括C / L延迟补偿功能,用于补偿相对于在电视机中解调视频信号期间出现的色度信号的亮度信号的延迟。 RF调制器包括将亮度信号延迟170nsec的C / L延迟补偿单元,并将延迟的亮度信号与色度信号组合以输出具有-170nsec的C / l延迟的合成图像信号,以及调制单元 将从C / L延迟补偿单元接收的视频信号转换为单个模块或封装中的预定广播信道的高频信号。 RF调制器输出相对于色度信号延迟了170nsec的亮度信号的视频信号并且符合C / L延迟标准,而不向RF调制器添加任何额外的C / L延迟补偿单元。
    • 24. 发明授权
    • Ultra high speed and high sensitivity DNA sequencing system and method for same
    • 超高速和高灵敏度的DNA测序系统及方法相同
    • US09097719B2
    • 2015-08-04
    • US13063268
    • 2009-10-08
    • Jung Bum ChoiJong Jin Lee
    • Jung Bum ChoiJong Jin Lee
    • G01N27/00G01N33/58B82Y15/00C12Q1/68G01N33/487B82Y5/00B01L3/00G01N27/414
    • G01N33/588B01L3/502761B82Y5/00B82Y15/00C12Q1/6869G01N27/00G01N27/414G01N33/48721Y10S436/806C12Q2565/631C12Q2565/629C12Q2565/607
    • The present system relates to a system architecture that uses a single electron transistor (SET) to analyze base sequences of deoxyribonucleic acid (DNA) at ultra high speed in real time. DNA represents the entire body of genetic information and consists of nucleotide units. There are a total of four types of nucleotides, and each nucleotide consists of an identical pentose (deoxyribose), phosphate group, and one of four types of bases (Adenine: A, Guanine: G, Cytosine: C, Thymine: T). A and G are purines having a bicyclic structure while C and T are pyrimidines having a monocyclic structure. Each has a different atomic arrangement, which signifies a different charge distribution from one another. Therefore, a system comprising a single electron transistor that is very sensitive to charges, a probe of a very small size that reacts to one nucleotide very effectively, and an extended gate that connects the SET with the probe, can be used to analyze DNA base sequences at ultra high speed in real time.
    • 本系统涉及使用单电子晶体管(SET)实时分析超高速脱氧核糖核酸(DNA)的碱基序列的系统架构。 DNA代表整个遗传信息,由核苷酸单位组成。 总共有四种类型的核苷酸,每个核苷酸由相同的戊糖(脱氧核糖),磷酸基和四种碱基之一(腺嘌呤:A,鸟嘌呤:G,胞嘧啶:C,胸腺嘧啶)组成。 A和G是具有双环结构的嘌呤,而C和T是具有单环结构的嘧啶。 每个都具有不同的原子排列,这表示彼此不同的电荷分布。 因此,可以使用包括对电荷非常敏感的单电子晶体管的系统,非常有效地对一个核苷酸反应的非常小的尺寸的探针和将SET连接到探针的扩展的门来分析DNA碱基 实时超高速序列。
    • 25. 发明授权
    • Multiple quantum dot device and a production method for the device
    • 多量子点装置及其制造方法
    • US08829492B2
    • 2014-09-09
    • US13883321
    • 2010-11-25
    • Jung Bum ChoiJong Jin Lee
    • Jung Bum ChoiJong Jin Lee
    • H01L29/66H01L29/76B82Y10/00
    • H01L29/66977B82Y10/00H01L29/66439H01L29/7613
    • The present invention relates to a multi-quantum dot device and a method of manufacturing the multi-quantum dot device. Further specifically, present invention relates to a multi-quantum dot device including a channel configured by patterning the top silicon layer of an SOI wafer to have a P-type silicon region formed by connecting a transversal region and a longitudinal region and a plurality of N-type silicon regions; gates including a plurality of tunneling barrier gates, an end of each tunneling barrier gate is positioned on the top of a transversal side of an intersection of the transversal region and the longitudinal region of the P-type silicon region to locally control a potential in the channel; a plurality of coupling gates, an end of each coupling gate is positioned on the top of a point between the intersection and another intersection adjacent to the intersection to locally control the potential in the channel; and a plurality of sensor gates, an end of each sensor gate is positioned on the top of a center of the intersection to sense a state of a quantum dot formed at the intersection; and an inversion layer gate formed on the top of the P-type silicon region to control free electron density.
    • 本发明涉及一种多量子点装置及多量子点装置的制造方法。 更具体地说,本发明涉及一种多量子点器件,其包括通过对SOI晶片的顶部硅层进行构图而形成的沟道,以形成通过连接横向区域和纵向区域形成的P型硅区域和多个N 型硅区; 包括多个隧道势垒栅极的栅极,每个隧道势垒栅极的端部位于横向区域和P型硅区域的纵向区域的交叉的横向的顶部上,以局部地控制P型硅区域的电位 渠道; 多个耦合栅极,每个耦合栅极的端部位于交叉点和邻接相交处的另一交叉点之间的点的顶部,以局部地控制信道中的电位; 和多个传感器门,每个传感器门的端部位于交叉点的中心的顶部,以感测形成在交叉点处的量子点的状态; 以及形成在P型硅区域的顶部上以控制自由电子密度的反型层栅极。