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21. 发明授权

US5811847A PSZT for integrated circuit applications 失效
标题翻译： PSZT用于集成电路应用
公开(公告)号：US5811847A
公开(公告)日：1998-09-22
申请号：US672421
申请日：1996-06-28
申请人： Vikram Joshi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Vikram Joshi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L21/02 , H01L27/115 , H01L27/108
CPC分类号： H01L27/11502 , H01L28/55
摘要： An integrated circuit memory, MMIC, or other device including a dielectric comprising lead-tin zirconium-titanium oxide (PSZT). The proportion of tin ranges from 30% to 50% of the total amount of tin, zirconium and titanium. The dielectric is formed by applying a first liquid precursor having 10% excess lead to a substrate and heating it to form a first PSZT thin film, applying a second liquid precursor having 5% excess lead to the first thin film and heating to form a second thin film, then applying the first liquid precursor and heating to form a third thin film, and annealing the three thin films together to form a PSZT dielectric layer.
摘要翻译：集成电路存储器，MMIC或包括包含铅 - 锡锆 - 氧化钛（PSZT）的电介质的其它器件。锡的比例范围为锡，锆和钛的总量的30％至50％。通过将具有10％过量的铅的第一液体前体施加到基底上并加热以形成第一PSZT薄膜，将具有5％多余铅的第二液体前体施加到第一薄膜上并加热形成第二个薄膜，然后施加第一液体前体并加热以形成第三薄膜，并将三个薄膜退火在一起以形成PSZT介电层。

22. 发明授权

US5723171A Integrated circuit electrode structure and process for fabricating same 失效
标题翻译：集成电路电极结构及其制造方法
公开(公告)号：US5723171A
公开(公告)日：1998-03-03
申请号：US772606
申请日：1996-12-23
申请人： Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L23/52 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L27/115 , B05D5/06
CPC分类号： H01L27/11502 , C23C16/4412 , C23C16/448 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , H01L21/31691 , H01L28/56 , H01L28/60 , H01L28/65 , H01L28/55
摘要： An electrode for a ferroelectric electronic device is formed on an SiO.sub.2 isolation layer by depositing an adhesion layer, such as titanium, between about 25 .ANG. and 500 .ANG. thick, then a layer of a nobel metal, such as platinum, that is at least 10 times thicker than the adhesion layer. The electrode is then annealed at a temperature higher than the minimum oxide eutectic temperature of the adhesion layer. The electrode is moved into the annealing furnace at a ramp rate such that it reaches its anneal temperature in five minutes or less. The relative thinness of the adhesion layer and the quick ramp up of the anneal causes all the titanium to be tied up in the oxide before it can diffuse through the platinum, and prevents the formation of rutile phases of the titanium and defects such as voids and hillocks in the platinum, which can destabilize the electrode.
摘要翻译：用于铁电电子器件的电极通过在约25至500厚之间沉积诸如钛之类的粘合层，然后将诸如铂的诺贝尔金属层，至少为10埃，形成在SiO 2隔离层上比粘合层厚。然后将电极在高于粘附层的最小氧化物共晶温度的温度下退火。电极以升高速度移动到退火炉中，使其在5分钟或更短时间内达到其退火温度。粘合层的相对薄度和退火的快速上升导致所有的钛在氧化物中被扩散通过铂之前被束缚在其中，并且防止了钛的金红石相的形成以及诸如空隙和缺陷的缺陷白金中的小丘，可能会使电极不稳定。

23. 发明授权

US5439845A Process for fabricating layered superlattice materials and making electronic devices including same 失效
公开(公告)号：US5439845A
公开(公告)日：1995-08-08
申请号：US350323
申请日：1994-12-05
申请人： Hitoshi Watanabe , Carlos A. Paz De Araujo , Hiroyuki Yoshimori , Michael C. Scott , Takashi Mihara , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Hitoshi Watanabe , Carlos A. Paz De Araujo , Hiroyuki Yoshimori , Michael C. Scott , Takashi Mihara , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L29/15
CPC分类号： B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Prebaking the substrate and oxygen in the RTP and anneal is essential, except for high bismuth content precursors. Excess bismuth between 110% and 140% of stoichiometry and RTP temperature of 725.degree. C. is optimum. The film is formed in two layers, the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor. The electronic properties are so regularly dependent on process parameters and material composition, and such a wide variety of materials are possible, that electronic devices can be designed by selecting from a continuous record of the values of one or more electronic properties as a continuous function of the process parameters and material composition, and utilizing the selected process and material composition to make a device.

24. 发明授权

US06358758B2 Low imprint ferroelectric material for long retention memory and method of making the same 有权
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US06358758B2
公开(公告)日：2002-03-19
申请号：US09860386
申请日：2001-05-19
申请人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , H01L27/10852
摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
摘要翻译：用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

25. 发明授权

US06225656B1 Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same 有权
标题翻译：含有保护层的铁电集成电路和氧气的制造方法
公开(公告)号：US06225656B1
公开(公告)日：2001-05-01
申请号：US09204033
申请日：1998-12-01
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L2924/0002 , H01L2924/00
摘要： A protective layer in a ferroelectric integrated circuit contains small amounts of oxygen to protect ferroelectric oxide material against hydrogen degradation during the fabrication process. Typically, the protective layer is a hydrogen diffusion barrier layer formed to cover a thin film of ferroelectric oxide material. In one method, a small amount of oxygen is included in the sputter atmosphere during deposition of a hydrogen diffusion barrier or a metallized wiring layer. The oxygen forms oxides that inhibit diffusion of hydrogen towards the ferroelectric oxide material. The oxygen forms a concentration gradient so that the oxygen concentration in the interior of the protective layer is zero, and the oxygen concentration near the surfaces of the layer is about two weight percent.
摘要翻译：铁电集成电路中的保护层含有少量的氧以保护铁电氧化物材料在制造过程中抵抗氢降解。通常，保护层是形成为覆盖铁电氧化物材料的薄膜的氢扩散阻挡层。在一种方法中，在沉积氢扩散阻挡层或金属化布线层期间，溅射气氛中包含少量的氧。氧形成抑制氢向铁电氧化物材料扩散的氧化物。氧形成浓度梯度，使得保护层内部的氧浓度为零，并且层表面附近的氧浓度为约2重量％。

26. 发明授权

US5614018A Integrated circuit capacitors and process for making the same 失效
标题翻译：集成电路电容器和制造相同的工艺
公开(公告)号：US5614018A
公开(公告)日：1997-03-25
申请号：US273592
申请日：1994-07-11
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott , Joseph D. Cuchiaro
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott , Joseph D. Cuchiaro
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L27/115 , C30B9/08
CPC分类号： H01L27/11502 , C04B35/4682 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L28/56 , H01L28/60 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , H01L28/55
摘要： A xylene exchange is performed on a stock solution of BST of greater then 99.999% purity dissolved in methoxyethanol, and a carboxylate of a dopant metal, such as magnesium 2-ethylhexanoate is added to form a precursor. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 750.degree. C. to 800.degree. C. for about an hour to form a layer of accurately doped BST. A second electrode is deposited, patterned, and annealed at between 750.degree. C. to 800.degree. C. for about 30 minutes. Excellent leakage current results if the dopant is magnesium of about 5% molarity. For other dopants, such as Mg, Nb, Y, Bi, and Sn the preferred dopant range is 0.2% to 0.3% molarity. The magnesium-doped material is used as a buffer layer between the electrodes and BST dielectric of an undoped BST capacitor.
摘要翻译：对溶解在甲氧基乙醇中的纯度为99.999％的BST的原液进行二甲苯交换，加入2-乙基己酸镁等掺杂剂金属的羧酸盐，形成前体。将前体在第一电极上旋转，在400℃下干燥2分钟，然后在750℃至800℃退火约1小时以形成精确掺杂的BST层。在750℃至800℃下沉积，图案化和退火第二电极约30分钟。如果掺杂剂为约5％摩尔浓度的镁，则会产生优异的漏电流。对于其它掺杂剂如Mg，Nb，Y，Bi和Sn，优选的掺杂剂范围为0.2％至0.3％摩尔浓度。掺杂镁的材料用作未掺杂的BST电容器的电极和BST电介质之间的缓冲层。

27. 发明授权

US06570202B2 Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same 有权
标题翻译：对氢曝露具有低灵敏度的铁电集成电路及其制造方法
公开(公告)号：US06570202B2
公开(公告)日：2003-05-27
申请号：US09779391
申请日：2001-02-07
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/75
摘要： A hydrogen barrier layer is formed above a ferroelectric thin film in an integrated circuit. The hydrogen barrier layer is directly over a protected segment of the ferroelectric thin film, while a sacrificial segment of the ferroelectric thin film extends laterally beyond the edges of the hydrogen barrier layer. The sacrificial segment absorbs hydrogen so that it cannot diffuse laterally into the protected segment of the ferroelectric thin film. After it absorbs hydrogen, the sacrificial segment is etched away to allow electrical connection to circuit layers below it. The ferroelectric thin film preferably comprises a layered superlattice compound. Excess bismuth or niobium added to the standard precursor solution of a strontium bismuth tantalum niobate compound helps to reduce hydrogen degradation of the ferroelectric properties.
摘要翻译：在集成电路中的铁电薄膜的上方形成氢阻挡层。氢阻挡层直接在铁电薄膜的受保护部分之上，而铁电薄膜的牺牲段横向延伸超过氢阻挡层的边缘。牺牲段吸收氢，使得其不能横向扩散到铁电薄膜的受保护段中。在吸收氢之后，牺牲段被蚀刻掉以允许电连接到其下方的电路层。铁电薄膜优选包含层状超晶格化合物。添加到铌酸铋钽酸锶化合物的标准前体溶液中的过量铋或铌有助于降低铁电性能的氢降解。

28. 发明授权

US06512256B1 Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same 有权
标题翻译：具有自对准氢阻挡层的集成电路及其制造方法
公开(公告)号：US06512256B1
公开(公告)日：2003-01-28
申请号：US09197385
申请日：1998-11-20
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L31119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： In an integrated circuit, a stack of thin film layers comprising respectively a bottom electrode, a thin film of metal oxide, a top electrode, a lower barrier-adhesion layer, a hydrogen barrier layer, and an upper barrier-adhesion layer are patterned to form a memory capacitor capped with a self-aligned hydrogen barrier layer. Preferably, the top and bottom electrodes comprise platinum, the metal oxide material comprises ferroelectric layered superlattice material, the upper and lower barrier-adhesion layers comprise titanium, and the hydrogen barrier layer comprises titanium nitride. The hydrogen barrier layer inhibits diffusion of hydrogen, thereby preventing hydrogen degradation of the metal oxides. Part of the upper barrier-adhesion layer is removed in order to increase the electrical conductivity in the layer. Preferably, the memory capacitor is a ferroelectric nonvolatile memory. Preferably, the layered superlattice material includes strontium bismuth tantalate or strontium bismuth tantalum niobate.
摘要翻译：在集成电路中，将包括底部电极，金属氧化物薄膜，顶部电极，下部阻挡层 - 粘合层，氢气阻挡层和上部阻挡 - 粘附层的薄膜层叠层图案化形成用自对准氢阻挡层封盖的记忆电容器。优选地，顶部和底部电极包括铂，金属氧化物材料包括铁电层状超晶格材料，上部和下部阻挡 - 粘附层包含钛，氢气阻挡层包括氮化钛。氢阻挡层抑制氢的扩散，从而防止金属氧化物的氢降解。为了增加层中的导电性，去除了上部阻挡 - 粘附层的一部分。优选地，存储电容器是铁电非易失性存储器。优选地，层状超晶格材料包括钽酸铋钽或铌酸铋钽铌酸盐。

29. 发明授权

US06495878B1 Interlayer oxide containing thin films for high dielectric constant application 有权
标题翻译：用于高介电常数应用的含有薄膜的层间氧化物
公开(公告)号：US06495878B1
公开(公告)日：2002-12-17
申请号：US09365628
申请日：1999-08-02
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L27108
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−Y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-Y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

30. 发明授权

US06867452B2 Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7 失效
标题翻译：含有氧化物的薄膜用于高介电常数应用的AB2O6或AB2O7
公开(公告)号：US06867452B2
公开(公告)日：2005-03-15
申请号：US10278581
申请日：2002-10-23
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , H01L21/316 , H01L27/06 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦y≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= y <= 1.0且0 <= Y＆LE; 1.0; （BAxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; AND（BAxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

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