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21. 发明申请

WO2007056045A1 HYDROCRACKING CATALYST CONTAINING BETA AND Y ZEOLITES, AND PROCESS FOR ITS USE TO PRODUCE NAPHTHA 审中-公开
标题翻译：含有BET和Y沸石的水解催化剂及其生产NAPHTHA的方法
公开(公告)号：WO2007056045A1
公开(公告)日：2007-05-18
申请号：PCT/US2006/042776
申请日：2006-11-02
申请人： UOP LLC , WANG, Li
发明人： WANG, Li
IPC分类号： C10G47/00
CPC分类号： B01J29/80 , B01J29/084 , B01J29/166 , B01J29/7007 , B01J29/7815 , B01J37/0009 , B01J37/20 , B01J2229/20 , B01J2229/36 , C10G47/16 , C10G47/20 , C10G2300/301 , C10G2300/4006 , C10G2300/4012 , C10G2400/02
摘要： Increased yields of naphtha and increased catalyst activity are obtained in a hydrocracking process by the use of a catalyst containing a beta zeolite and a Y zeolite having a unit cell size from 24.38 to 24.50 angstrom. The catalyst has a relatively high amount of Y zeolite relative to beta zeolite.
摘要翻译：在加氢裂化过程中，通过使用含有β沸石的催化剂和具有24.38至24.50埃的晶胞尺寸的Y沸石获得石脑油的提高和催化剂活性的提高。催化剂相对于β沸石具有相对高量的Y沸石。

22. 发明申请

WO2002099090A1 BCL-2 DNAZYMES 审中-公开
公开(公告)号：WO2002099090A1
公开(公告)日：2002-12-12
申请号：PCT/AU2002/000739
申请日：2002-06-07
申请人： JOHNSON & JOHNSON RESEARCH PTY LTD , SUN, Lun-Quan , WANG, Li , TURNER, Rachel, Jane , SARAVOLAC, Edward, George , DASS, Crispin, Rajnish
发明人： SUN, Lun-Quan , WANG, Li , TURNER, Rachel, Jane , SARAVOLAC, Edward, George , DASS, Crispin, Rajnish
IPC分类号： C12N9/00
CPC分类号： C12N15/1135 , C12N2310/12
摘要： The present invention provides DNAzymes which specifically cleaves mRNA transcribed from a member of the bcl-2 gene family selected from the group consisting of bcl-2, bcl-xl, bcl-w, bfl-1, brag-1, Mcl-1 and A1. The DNAzymes comprise (a) a catalytic domain that has the nucleotide sequence GGCTAGCTACAACGA (SEQ ID NO.1) and cleaves mRNA at any purine: pyrimidine cleavage site at which it is directed, (b) a binding domain contiguous with the 5' end of the catalytic domain, and (c) another binding domain contiguous with the 3' end of the catalytic domain. The binding domains are complementary to, and therefore hybridise with, the two regions immediately flanking the purine residue of the cleavage site within the bcl-2 gene family mRNA, at which DNAzyme-catalysed cleavage is desired. Each binding domain is at least six nucleotides in length, and both binding domains have a combined total length of at least 14 nucleotides.
摘要翻译：本发明提供了特异性切割从bcl-2基因家族成员转录的mRNA的DNA酶，其选自bcl-2，bcl-xl，bcl-w，bfl-1，brag-1，Mcl-1和 A1。 DNAzymes包含（a）具有核苷酸序列GGCTAGCTACAACGA（SEQ ID NO.1）的催化结构域，并在任何嘌呤：其所针对的嘧啶切割位点处切割mRNA，（b）与5'端连接的结合结构域的催化结构域，和（c）与催化结构域的3'末端相邻的另一个结合结构域。结合结构域与bcl-2基因家族mRNA内的切割位点的嘌呤残基紧邻的两个区域互补，并因此杂交，需要DNA酶催化切割。每个结合结构域的长度至少为6个核苷酸，两个结合结构域的总长度至少为14个核苷酸。

23. 发明申请

WO2015042900A1 MEDICAL TREATMENT DEVICES HAVING ADJUSTABLE LENGTH AND/OR DIAMETER 审中-公开
标题翻译：具有可调节长度和/或直径的医疗处理装置
公开(公告)号：WO2015042900A1
公开(公告)日：2015-04-02
申请号：PCT/CN2013/084564
申请日：2013-09-29
申请人： COVIDIEN LP , WANG, Li
发明人： WANG, Li , ONG, Jiun Keat , HONG, Chunlang
IPC分类号： A61B18/14
CPC分类号： A61B18/082 , A61B18/10 , A61B18/1492 , A61B2018/00178 , A61B2018/00404 , A61B2018/00577 , A61B2018/00702 , A61B2018/00791 , A61B2018/00827 , A61B2018/00875 , A61B2018/00988 , A61B2018/1435 , A61B2018/1495
摘要： A medical treatment device (10) having an adjustable length and /or diameter is disclosed. The medical treatment device (10) comprises: a catheter having an elongate flexible shaft (12) with a proximal end (14) and a distal end (13); a first electrically resistive heating element (92) having a first outer diameter and disposed at the distal end (13) of the shaft (12); first electrical contacts (98) on the catheter shaft (12); a second electrically resistive heating element (100) having a second, lager, outer diameter and connectable to the shaft to at least partially surround the first electrically resistive heating element (92) and having second electrical contacts (102) connectable to the first electrical contacts (92). The device enables the length and /or diameter of the heating segment to be adjusted during a treatment procedure without a need to interrupt the procedure and thereby allows a single catheter to be used at different location in a hollow anatomical structure.
摘要翻译：公开了一种具有可调长度和/或直径的医疗装置（10）。医疗装置（10）包括：导管，其具有带有近端（14）和远端（13）的细长柔性轴（12）。第一电阻加热元件（92），其具有第一外径并设置在所述轴（12）的远端（13）处; 导管轴（12）上的第一电触点（98）; 第二电阻加热元件（100），其具有第二较大的外径并且可连接到所述轴以至少部分地围绕所述第一电阻加热元件（92）并且具有可连接到所述第一电触头的第二电触点（102）（92）。该装置能够在治疗过程中调节加热段的长度和/或直径，而不需要中断该过程，从而允许在中空解剖结构中的不同位置使用单个导管。

24. 发明申请

WO2015042898A1 SAFETY MECHANISM FOR MEDICAL TREATMENT DEVICE AND ASSOCIATED METHODS 审中-公开
标题翻译：医疗处理设备安全机制及相关方法
公开(公告)号：WO2015042898A1
公开(公告)日：2015-04-02
申请号：PCT/CN2013/084560
申请日：2013-09-29
申请人： COVIDIEN LP , WANG, Li
发明人： WANG, Li , HONG, Chunlang , YUAN, Zhen
IPC分类号： A61B18/08 , H01H3/20
CPC分类号： H01H9/06 , A61B18/12 , A61B34/76 , A61B46/10 , A61B2018/00178 , A61B2018/00345 , A61B2018/00577 , A61B2018/00642 , A61B2018/00702 , A61B2018/00815 , A61B2018/00821 , A61B2018/00922 , A61B2090/08021 , A61B2090/0807 , A61B2090/0813 , H01H9/161 , H01H2221/03 , H01H2223/04 , H01H2225/02 , H01H2235/01 , H01H2239/06 , H01H2300/014
摘要： A safety mechanism for medical treatment devices (20) includes a switch actuator (16) that depresses a power activation switch (14) after movement in a first direction followed movement in a second direction. The safety mechanism thus prevents accidental or unintentional delivery of power to a heating segment (28) of the medical treatment devices (20).
摘要翻译：医疗装置（20）的安全机构包括开关致动器（16），其在沿第一方向移动之后沿第二方向移动按压动力开关开关（14）。因此，安全机构防止意外地或无意地向医疗设备（20）的加热段（28）传递电力。

25. 发明申请

WO2014121222A1 ENDONUCLEASE FOR GENOME EDITING 审中-公开
标题翻译：用于基因组编辑的内切酶
公开(公告)号：WO2014121222A1
公开(公告)日：2014-08-07
申请号：PCT/US2014/014491
申请日：2014-02-03
申请人： THE UNIVERSITY OF WESTERN ONTARIO , EDGELL, David R. , KLEINSTIVER, Benjamin P. , WANG, Li , BOGDANOVE, Adam J.
发明人： EDGELL, David R. , KLEINSTIVER, Benjamin P. , WANG, Li , BOGDANOVE, Adam J.
IPC分类号： C12N9/10 , C12N15/54 , C12N15/63
CPC分类号： C12N9/22 , C07K2319/80 , C12N15/1082
摘要： A chimeric endonuclease is provided comprising the GIY-YIG nuclease domain which is linked to a DNA-targeting domain by a linking domain. The endonuclease is useful in gene editing.
摘要翻译：提供了包含通过连接结构域与DNA靶向结构域连接的GIY-YIG核酸酶结构域的嵌合内切核酸酶。核酸内切酶可用于基因编辑。

26. 发明申请

WO2011028185A1 A SENSOR ARRANGEMENT 审中-公开
标题翻译：传感器布置
公开(公告)号：WO2011028185A1
公开(公告)日：2011-03-10
申请号：PCT/SG2010/000331
申请日：2010-09-07
申请人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH , HAN, Guchang , QIU, Jinjun , WANG, Li , YEO, Wee Kay , WANG, Chenchen
发明人： HAN, Guchang , QIU, Jinjun , WANG, Li , YEO, Wee Kay , WANG, Chenchen
IPC分类号： G11B5/133 , G11B5/33 , G11B11/14
CPC分类号： G11B5/3954 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： In an embodiment, a sensor arrangement may be provided. The sensor arrangement may include a sensor including a first spin valve. The first spin valve may include a first free layer structure; a first pinning structure disposed over the first free layer structure; and a first anti-ferromagnetic layer disposed over the first pinning structure. The sensor may further include a second spin valve. The second spin valve may include a second free layer structure; a second pinning structure disposed over the second free layer structure; and a second anti-ferromagnetic layer disposed over the second pinning structure. The sensor may also include a separator structure positioned between the first spin valve and the second spin valve such that the separator structure may be in contact with the first free layer structure and the second free layer structure. The first pinning structure may include an odd number of first ferromagnetic layers and the second pinning structure may include an even number of second ferromagnetic layers so as to enable the sensor to provide a differential signal when a current flows through the sensor.
摘要翻译：在一个实施例中，可以提供传感器装置。传感器装置可包括包括第一自旋阀的传感器。第一自旋阀可以包括第一自由层结构; 设置在所述第一自由层结构上的第一钉扎结构; 以及设置在所述第一钉扎结构上的第一反铁磁层。传感器还可以包括第二自旋阀。第二自旋阀可以包括第二自由层结构; 设置在所述第二自由层结构上的第二钉扎结构; 以及设置在第二钉扎结构上的第二反铁磁层。传感器还可以包括位于第一自旋阀和第二自旋阀之间的分离器结构，使得分离器结构可以与第一自由层结构和第二自由层结构接触。第一钉扎结构可以包括奇数个第一铁磁层，并且第二钉扎结构可以包括偶数个第二铁磁层，以便当电流流过传感器时能够使传感器提供差分信号。

27. 发明申请

WO2011011631A2 NUCLEIC ACID DELIVERY VEHICLES 审中-公开
标题翻译：核酸递送车辆
公开(公告)号：WO2011011631A2
公开(公告)日：2011-01-27
申请号：PCT/US2010/042951
申请日：2010-07-22
申请人： ZALIPSKY, Samuel , WANG, Li , DING, Zhongli , LUO, Bing
发明人： ZALIPSKY, Samuel , WANG, Li , DING, Zhongli , LUO, Bing
IPC分类号： A61K48/00
CPC分类号： C12N15/87
摘要： The invention provides a stable nanoparticle for nucleic acid delivery to cells and tissues in vitro and in vivo , methods for making and using the nanoparticle for at least therapeutic and diagnostic purposes.
摘要翻译：本发明提供了用于核酸递送至体外和体外细胞和组织的稳定纳米颗粒，制备和使用纳米颗粒的方法，用于至少是治疗和诊断目的。

28. 发明申请

WO2010020077A1 METHOD FOR FABRICATING INGAAIN LIGHT-EMITTING DEVICE ON A COMBINED SUBSTRATE 审中-公开
标题翻译：在组合衬底上制造激光发光器件的方法
公开(公告)号：WO2010020077A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001510
申请日：2008-08-22
申请人： LATTICE POWER (JIANGXI) CORPORATION , XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , ZHANG, Shaohua , WANG, Guping , WANG, Guangxu
发明人： XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , ZHANG, Shaohua , WANG, Guping , WANG, Guangxu
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/0095 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.
摘要翻译：本发明的一个实施例提供一种制造InGaAlN发光半导体结构的方法。在制造过程中，至少一个单晶牺牲层沉积在基底表面上以形成组合衬底，其中单晶牺牲层与InGaAlN晶格匹配，其中单晶层形成牺牲层。接下来，在组合衬底上制造InGaAlN发光半导体结构。然后将在组合衬底上制造的InGaAlN结构转移到支撑衬底，从而有助于垂直电极配置。转移InGaAlN结构包括用化学蚀刻剂蚀刻单晶牺牲层。此外，InGaAlN和基底对化学蚀刻剂具有耐受性。在传输InGaAlN结构后，可以重新使用基底。

29. 发明申请

WO2010020069A1 METHOD FOR FABRICATING InGaAlN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE 审中-公开
标题翻译：用金属基材制造InGaAlN发光二极管的方法
公开(公告)号：WO2010020069A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001493
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , FANG, Wenqing , WANG, Guping , ZHANG, Shaohua
发明人： XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , FANG, Wenqing , WANG, Guping , ZHANG, Shaohua
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/382 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.
摘要翻译：本发明的一个实施例提供一种制造发光二极管的方法。该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。该方法还包括在每个台面上制造包含p型层，多量子阱层和n型层的铟镓铝氮化物（InGaAlN）多层结构。此外，该方法包括在InGaAlN多层结构的顶部上沉积一个或多个金属衬底层。此外，该方法包括去除生长衬底。此外，该方法包括在InGaAlN多层结构的两侧形成电极，从而形成垂直电极结构。

30. 发明申请

WO2010020067A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER 审中-公开
标题翻译：具有钝化层的半导体发光器件
公开(公告)号：WO2010020067A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001491
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , LIU, Junlin , WANG, Li
发明人： JIANG, Fengyi , LIU, Junlin , WANG, Li
IPC分类号： H01L33/12
CPC分类号： H01L33/44 , H01L33/0079
摘要： A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layers. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer.
摘要翻译：一种发光装置及其制造方法。该器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂半导体层之间的多量子阱（MQW）。该器件还包括耦合到第一掺杂半导体层的第一电极和耦合到第二掺杂半导体层的第二电极。该器件还包括第一钝化层，其基本上覆盖第一和第二掺杂半导体层的侧壁，MQW有源层以及第二掺杂半导体层的未被第二电极覆盖的部分水平表面。第一钝化层通过氧化技术形成。该器件还包括覆盖第一钝化层的第二钝化层。

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