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21. 发明申请

US20070087489A1 Organic thin film transistor, method of manufacturing the same, and flat panel display comprising the same 有权
标题翻译：有机薄膜晶体管及其制造方法以及包括该薄膜晶体管的平板显示器
公开(公告)号：US20070087489A1
公开(公告)日：2007-04-19
申请号：US11582467
申请日：2006-10-18
申请人： Jin-Seong Park , Taek Ahn , Min-Chul Suh
发明人： Jin-Seong Park , Taek Ahn , Min-Chul Suh
IPC分类号： H01L21/84 , H01L21/00 , H01L51/40 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L51/0533 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L27/3274 , H01L51/0545
摘要： The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed. Thus, the adhesive force between the organic semiconductor layer and the insulating layer increases and the phase separation of the organic semiconductor material caused by heat can be prevented, thereby obtaining a flat panel display device with improved reliability.
摘要翻译：有机TFT包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 将栅电极与源电极和漏电极以及有机半导体层绝缘的绝缘层; 以及包括在绝缘层和有机半导体层之间的自组装单层（SAM）。形成SAM的化合物具有至少一个选自未取代或取代的C 6 -C 30芳基的末端基团和未取代或取代的C _{2 30 30个杂芳基。在形成有机半导体层和源极和漏极之前，通过形成上述层并在绝缘层上形成SAM来形成有机TFT。因此，有机半导体层和绝缘层之间的粘合力增加，并且可以防止由热引起的有机半导体材料的相分离，从而获得可靠性提高的平板显示装置。}

22. 发明授权

US07875877B2 Organic thin film transistor and flat panel display device having the same 有权
标题翻译：有机薄膜晶体管和具有其的平板显示装置
公开(公告)号：US07875877B2
公开(公告)日：2011-01-25
申请号：US11581424
申请日：2006-10-17
申请人： Jin-Seong Park , Min-Chul Suh , Taek Ahn
发明人： Jin-Seong Park , Min-Chul Suh , Taek Ahn
IPC分类号： H01L51/30
CPC分类号： H01L51/0545 , H01L51/0558
摘要： An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.
摘要翻译：可以控制阈值电压并减少漏电流的有机薄膜晶体管包括：栅电极; 与栅电极绝缘的有机半导体层; 源极电极和漏电极，与栅电极绝缘并电连接到有机半导体层; 插入在所述栅极电极和所述有机半导体层之间的栅极绝缘层; 以及介于栅极绝缘层和有机半导体层之间的空穴控制层。空穴控制层包括具有空穴给体基团的化合物或具有空穴受体基团的化合物。

23. 发明授权

US07696520B2 Organic thin film transistor, method of manufacturing the same, and organic light emitting display device having the same 失效
标题翻译：有机薄膜晶体管，其制造方法以及具有该有机薄膜晶体管的有机发光显示装置
公开(公告)号：US07696520B2
公开(公告)日：2010-04-13
申请号：US11528022
申请日：2006-09-26
申请人： Taek Ahn , Min-Chul Suh , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jin-Seong Park
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/283 , H01L27/3274 , H01L51/0017 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： Provided is an organic thin film transistor that can prevents damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device having the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer.
摘要翻译：提供一种有机薄膜晶体管，其可以在图案化有机半导体层时防止对源极和漏极的损坏，以及制造具有有机薄膜晶体管的有机发光显示装置的方法。有机薄膜晶体管包括源电极和漏电极; 与源极和漏极接触的有机半导体层，除了源极和漏极之间的沟道区以外具有灰化表面; 与源电极，漏电极和有机半导体层绝缘的栅电极; 以及使栅电极与源电极，漏电极和有机半导体层绝缘的栅极绝缘膜。

24. 发明授权

US07485894B2 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US07485894B2
公开(公告)日：2009-02-03
申请号：US11582534
申请日：2006-10-18
申请人： Taek Ahn , Min-Chul Suh , Jin-Seong Park , Seok-Jong Lee , Jung-Han Shin
发明人： Taek Ahn , Min-Chul Suh , Jin-Seong Park , Seok-Jong Lee , Jung-Han Shin
IPC分类号： H01L29/08
CPC分类号： H01L51/0533 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L51/0545
摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
摘要翻译：薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

25. 发明申请

US20070090351A1 Organic thin film transistor and flat panel display device having the same 有权
标题翻译：有机薄膜晶体管和具有其的平板显示装置
公开(公告)号：US20070090351A1
公开(公告)日：2007-04-26
申请号：US11581424
申请日：2006-10-17
申请人： Jin-Seong Park , Min-Chul Suh , Taek Ahn
发明人： Jin-Seong Park , Min-Chul Suh , Taek Ahn
IPC分类号： H01L29/08 , H01L29/76 , H01L35/24 , H01L29/10 , H01L51/00 , H01L31/036 , H01L31/112
CPC分类号： H01L51/0545 , H01L51/0558
摘要： An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.
摘要翻译：可以控制阈值电压并减少漏电流的有机薄膜晶体管包括：栅电极; 与栅电极绝缘的有机半导体层; 源极电极和漏电极，与栅电极绝缘并电连接到有机半导体层; 插入在所述栅极电极和所述有机半导体层之间的栅极绝缘层; 以及介于栅极绝缘层和有机半导体层之间的空穴控制层。空穴控制层包括具有空穴给体基团的化合物或具有空穴受体基团的化合物。

26. 发明申请

US20080012014A1 Thin film transistor, method of preparing the same, and flat panel display device including the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制备方法以及包括薄膜晶体管的平板显示装置
公开(公告)号：US20080012014A1
公开(公告)日：2008-01-17
申请号：US11819966
申请日：2007-06-29
申请人： Jin-Seong Park , Min-Chul Suh
发明人： Jin-Seong Park , Min-Chul Suh
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0533 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor (TFT) has reduced contact resistance between an organic semiconductor layer and source and drain electrodes. In the TFT, organic semiconductor crystals can be grown satisfactorily so as to improve electrical properties of the TFT. A method of preparing the same and a flat panel display device including the TFT are disclosed.
摘要翻译：薄膜晶体管（TFT）具有降低有机半导体层与源极和漏极之间的接触电阻。在TFT中，可以令人满意地生长有机半导体晶体，以改善TFT的电性能。公开了一种其制备方法和包括TFT的平板显示装置。

27. 发明授权

US09039886B2 Method of transferring graphene 有权
标题翻译：转移石墨烯的方法
公开(公告)号：US09039886B2
公开(公告)日：2015-05-26
申请号：US13659355
申请日：2012-10-24
申请人： Kuanping Gong , Lijie Ci , Sung-Hee Ahn , Jin-Seong Park , Byeong-Yeol Kim
发明人： Kuanping Gong , Lijie Ci , Sung-Hee Ahn , Jin-Seong Park , Byeong-Yeol Kim
IPC分类号： C25F5/00 , B32B38/10 , B32B38/00 , C01B31/04 , B32B37/06 , B32B38/16
CPC分类号： B32B38/10 , B32B37/06 , B32B38/162 , C01B32/186 , C01B32/194 , C25F5/00
摘要： A method of transferring graphene includes depositing graphene on a side of at least one metal substrate to provide a metal substrate-graphene layer, stacking a target substrate on a side of the metal substrate-graphene layer to provide a stacked structure in which a side of the target substrate faces the graphene layer, and exposing the stacked structure to an electrolysis bath to remove the metal substrate and transfer the graphene onto the side of the target substrate.
摘要翻译：转移石墨烯的方法包括在至少一个金属基底的侧面上沉积石墨烯以提供金属基底 - 石墨烯层，在金属基底 - 石墨烯层的一侧堆叠目标基底以提供一种堆叠结构，目标衬底面向石墨烯层，并将堆叠结构暴露于电解槽以除去金属衬底并将石墨烯转移到目标衬底侧。

28. 发明授权

US08168968B2 Thin film transistor and organic light emitting display device using the same 有权
标题翻译：薄膜晶体管和使用其的有机发光显示装置
公开(公告)号：US08168968B2
公开(公告)日：2012-05-01
申请号：US12826418
申请日：2010-06-29
申请人： Jin-Seong Park , Kwang-Suk Kim , Jae-Kyeong Jeong , Yeon-Gon Mo
发明人： Jin-Seong Park , Kwang-Suk Kim , Jae-Kyeong Jeong , Yeon-Gon Mo
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity from oxygen like Hf and an atomic radius similar to that of Zn or SN to an oxide semiconductor made of ZnSnO to adjust concentration of carrier and to enhance reliability of the oxide semiconductor, and an organic light emitting display device having the same.
摘要翻译：提供了一种薄膜晶体管，其表现出稳定的可靠性和电特性，通过添加具有如Hf之类的氧的电负性差大的材料和类似于Zn或SN的原子半径的材料形成有源层到由ZnSnO制成的氧化物半导体，调整载体的浓度并提高氧化物半导体的可靠性，以及具有该氧化物半导体的有机发光显示装置。

29. 发明申请

US20110042666A1 Organic light emitting display device 有权
标题翻译：有机发光显示装置
公开(公告)号：US20110042666A1
公开(公告)日：2011-02-24
申请号：US12801201
申请日：2010-05-27
申请人： Hui-Won Yang , Yeon-Gon Mo , Jin-Seong Park , Min-Kyu Kim , Tae-Kyung Ahn , Hyun-Joong Chung
发明人： Hui-Won Yang , Yeon-Gon Mo , Jin-Seong Park , Min-Kyu Kim , Tae-Kyung Ahn , Hyun-Joong Chung
IPC分类号： H01L33/28
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/3262 , H01L27/3276
摘要： An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines.
摘要翻译：一种有机发光显示装置，包括沿第一方向布置的多条扫描线，沿第二方向布置的多条数据线，与多条扫描线相交的多条数据线，以及分别设置在多条扫描线的交点处的像素所述扫描和数据线，每个像素包括至少一个薄膜晶体管（TFT）和有机发光二极管，其中所述TFT是氧化物TFT，所述氧化物TFT包括作为有源层的第一氧化物半导体层，以及第二氧化物半导体层设置在相交的扫描线和数据线之间。

30. 发明授权

US08729553B2 Thin film transistor including catalyst layer, method of fabricating the same, and organic light emitting diode display device having the TFT 有权
标题翻译：包括催化剂层的薄膜晶体管，其制造方法和具有TFT的有机发光二极管显示装置
公开(公告)号：US08729553B2
公开(公告)日：2014-05-20
申请号：US12341064
申请日：2008-12-22
申请人： Jin-Seong Park , Yeon-Gon Mo , Hye-Dong Kim
发明人： Jin-Seong Park , Yeon-Gon Mo , Hye-Dong Kim
IPC分类号： H01L29/04
CPC分类号： H01L29/78675 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L29/66757 , H01L29/78603
摘要： A thin film transistor (TFT), a method of fabricating the same, and display device having the TFT of which the TFT includes a metal catalyst layer disposed on a substrate, a semiconductor layer disposed on the metal catalyst layer, a gate insulating layer disposed on the entire surface of the substrate, a gate electrode disposed on the gate insulating layer at a position corresponding to the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes disposed on the interlayer insulating layer and connected to the semiconductor layer, wherein the metal catalyst layer includes one of carbon, nitrogen, and halogen. The thin film transistor includes a poly-Si layer that may be formed to a smaller thickness than in conventional deposition methods thereby producing a TFT in which the remaining amount of metal catalyst in a semiconductor layer is reduced.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及具有TFT的TFT的显示装置，TFT包括设置在基板上的金属催化剂层，设置在金属催化剂层上的半导体层，设置在栅极绝缘层在基板的整个表面上，在对应于半导体层的位置处设置在栅极绝缘层上的栅极电极，设置在基板的整个表面上的层间绝缘层，以及设置在层间绝缘层上的源极和漏极并连接到半导体层，其中金属催化剂层包括碳，氮和卤素中的一种。薄膜晶体管包括可以形成为比常规沉积方法更小的厚度的多晶硅层，从而制造其中半导体层中的金属催化剂的剩余量减少的TFT。

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