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21. 发明授权

US08038943B2 Method of detecting bio-molecules using field effect transistor without fixing probe bio-molecules on the gate sensing surface 有权
标题翻译：使用场效应晶体管检测生物分子的方法，而不将探针生物分子固定在栅极感测表面上
公开(公告)号：US08038943B2
公开(公告)日：2011-10-18
申请号：US11695905
申请日：2007-04-03
申请人： Kyu-tae Yoo , Kyu-sang Lee , Won-seok Chung , Jeo-young Shim , Yeon-ja Cho
发明人： Kyu-tae Yoo , Kyu-sang Lee , Won-seok Chung , Jeo-young Shim , Yeon-ja Cho
IPC分类号： G01N27/00
CPC分类号： G01N33/54373
摘要： A method of detecting a presence of bio-molecules, or a concentration of the target bio-molecules using a field effect transistor, includes allowing a first sample including a first target bio-molecule to contact a sensing surface of the field effect transistor and measuring a change in an electric signal of the field effect transistor, the field effect transistor including a substrate, a source region and a drain region, the source region and the drain region formed apart from each other on the substrate, the source region and the drain region each doped to having an opposite polarity than a polarity of the substrate, a channel region disposed between the source region and the drain region and an insulating layer including the sensing surface, the insulating layer disposed on the channel region.
摘要翻译：使用场效应晶体管检测生物分子的存在或靶生物分子的浓度的方法包括允许包含第一靶生物分子的第一样品接触场效应晶体管的感测表面并测量场效应晶体管的电信号的变化，所述场效应晶体管包括基板，源极区和漏极区，在所述基板上彼此分离形成的所述源极区和漏极区，所述源极区和漏极每个被掺杂为具有与衬底的极性相反的极性，设置在源区和漏区之间的沟道区和包括感测表面的绝缘层，绝缘层设置在沟道区上。

22. 发明授权

US07859029B2 FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor 有权
标题翻译：用于检测离子材料的基于FET的传感器，使用基于FET的传感器的离子材料检测装置以及使用基于FET的传感器检测离子材料的方法
公开(公告)号：US07859029B2
公开(公告)日：2010-12-28
申请号：US11621191
申请日：2007-01-09
申请人： Kyu-sang Lee , Kyu-tae Yoo , Jeo-young Shim , Jin-tae Kim , Yeon-ja Cho
发明人： Kyu-sang Lee , Kyu-tae Yoo , Jeo-young Shim , Jin-tae Kim , Yeon-ja Cho
IPC分类号： H01L29/78
CPC分类号： G01N33/54373 , C12Q1/6825 , G01N27/4145
摘要： Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
摘要翻译：提供了一种用于检测离子材料的基于FET的传感器，包括基于FET的传感器的离子材料检测装置，以及使用基于FET的传感器检测离子材料的方法。基于FET的传感器包括：感测室，包括参考电极和多个感测FET; 以及包括参考电极和多个参考FET的参考室。该方法包括：使第一溶液流入和流出基于FET的传感器的感测室和参考室; 使预期含有离子材料的第二溶液流入和流出感测室，同时使第一溶液持续流入和移出参考室; 测量每个感测和参考FET的源极和漏极之间的沟道区域中的电流; 并校正感测FET的电流。

23. 发明授权

US07839134B2 Method and apparatus for simultaneously detecting size and concentration of ionic material 有权
标题翻译：用于同时检测离子材料的尺寸和浓度的方法和装置
公开(公告)号：US07839134B2
公开(公告)日：2010-11-23
申请号：US11619650
申请日：2007-01-04
申请人： Kyu-sang Lee , Kyu-tae Yoo , Jeo-young Shim , Won-seok Chung , Yeon-ja Cho
发明人： Kyu-sang Lee , Kyu-tae Yoo , Jeo-young Shim , Won-seok Chung , Yeon-ja Cho
IPC分类号： G01N27/00
CPC分类号： G01N27/4145 , G01N27/27
摘要： A method for simultaneously detecting a size and concentration of ionic materials includes measuring voltage drop values of at least three ionic materials of which sizes and concentrations are known using each of at least two FET-based sensors having different electrical characteristics, determining at least three points in a three-dimensional plot from the known sizes, concentrations and the measured voltage drop values, approximating the at least three points into a single plane, measuring a voltage drop value of an ionic material of which size and concentration are unknown using the at least two FET-based sensors, determining equipotential lines existing on the plane using the voltage drop value of the unknown ionic material and determining a cross point between each of the equipotential lines.
摘要翻译：用于同时检测离子材料的尺寸和浓度的方法包括测量至少三种离子材料的电压降值，其中尺寸和浓度已知使用具有不同电特性的至少两个基于FET的传感器中的每一个，确定至少三个点在已知尺寸，浓度和测量的电压降值的三维图中，将至少三个点近似为单个平面，测量其尺寸和浓度未知的离子材料的电压降值，至少使用至少两个基于FET的传感器，使用未知离子材料的电压降值确定在平面上存在的等电位线，并确定每个等电位线之间的交叉点。

24. 发明授权

US08035175B2 Field effect transistor for detecting ionic material and method of detecting ionic material using the same 有权
标题翻译：用于检测离子材料的场效应晶体管及使用其的离子材料检测方法
公开(公告)号：US08035175B2
公开(公告)日：2011-10-11
申请号：US11613258
申请日：2006-12-20
申请人： Jeo-young Shim , Kyu-sang Lee , Kyu-tae Yoo , Won-seok Chung
发明人： Jeo-young Shim , Kyu-sang Lee , Kyu-tae Yoo , Won-seok Chung
IPC分类号： H01L27/14
CPC分类号： G01N27/4145
摘要： A field effect transistor for detecting ionic material and a method of detecting ionic material using the field effect transistor. The field effect transistor for detecting ionic material includes a substrate formed of a semiconductor material, a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate, a channel region interposed between the source region and the drain region, an insulating layer disposed on the channel region and formed of an electrically insulating material, a first reference electrode disposed at an edge of the upper portion of the insulating layer and a second reference electrode disposed to be spaced apart from the insulating layer.
摘要翻译：用于检测离子材料的场效应晶体管和使用场效应晶体管检测离子材料的方法。用于检测离子材料的场效应晶体管包括由衬底形成的衬底，源极区和漏极区，在衬底中彼此间隔开并且掺杂有与衬底相反的导电类型，沟道区介于源极区域和漏极区域，设置在沟道区域上并由电绝缘材料形成的绝缘层，设置在绝缘层的上部的边缘处的第一参考电极和设置成间隔开的第二参考电极从绝缘层。

25. 发明申请

US20070231211A1 Method of Detecting Bio-Molecues Using the Same Field Effect Transistor on the Gate Sensing Surface 有权
标题翻译：在栅极感应表面上使用相同的场效应晶体管检测生物分子的方法
公开(公告)号：US20070231211A1
公开(公告)日：2007-10-04
申请号：US11695886
申请日：2007-04-03
申请人： Kyu-tae Yoo , Kyu-sang Lee , Jeo-young Shim , Won-seok Chung , Yeon-ja Cho
发明人： Kyu-tae Yoo , Kyu-sang Lee , Jeo-young Shim , Won-seok Chung , Yeon-ja Cho
IPC分类号： G01N30/96
CPC分类号： G01N33/54373 , G01N27/4145
摘要： Provided is a method of detecting the presence of a target bio-molecule or a concentration of the bio-molecule using a field effect transistor. The method includes: contacting a first sample having a first target bio-molecule with a reference electrode of a field effect transistor; measuring a first electric signal change of the field effect transistor; contacting a second sample with a sensing surface of the same field effect transistor; measuring a second electric signal change of the field effect transistor; and comparing the first electric signal with the second electric signal.
摘要翻译：提供了使用场效应晶体管检测目标生物分子的存在或生物分子的浓度的方法。该方法包括：将具有第一目标生物分子的第一样品与场效应晶体管的参比电极接触; 测量场效应晶体管的第一电信号变化; 使第二样品与相同场效应晶体管的感测表面接触; 测量场效应晶体管的第二电信号变化; 以及将所述第一电信号与所述第二电信号进行比较。

26. 发明授权

US08357957B2 FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor 有权
标题翻译：用于检测离子材料的基于FET的传感器，使用基于FET的传感器的离子材料检测装置以及使用基于FET的传感器检测离子材料的方法
公开(公告)号：US08357957B2
公开(公告)日：2013-01-22
申请号：US12912191
申请日：2010-10-26
申请人： Kyu-sang Lee , Kyu-tae Yoo , Jeo-young Shim , Jin-tae Kim , Yeon-ja Cho
发明人： Kyu-sang Lee , Kyu-tae Yoo , Jeo-young Shim , Jin-tae Kim , Yeon-ja Cho
IPC分类号： H01L29/78
CPC分类号： G01N33/54373 , C12Q1/6825 , G01N27/4145
摘要： Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
摘要翻译：提供了一种用于检测离子材料的基于FET的传感器，包括基于FET的传感器的离子材料检测装置，以及使用基于FET的传感器检测离子材料的方法。基于FET的传感器包括：感测室，包括参考电极和多个感测FET; 以及包括参考电极和多个参考FET的参考室。该方法包括：使第一溶液流入和流出基于FET的传感器的感测室和参考室; 使预期含有离子材料的第二溶液流入和流出感测室，同时使第一溶液持续流入和移出参考室; 测量每个感测和参考FET的源极和漏极之间的沟道区域中的电流; 并校正感测FET的电流。

27. 发明授权

US08293591B2 Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device 有权
标题翻译：包含金层的场效应晶体管，包括场效应晶体管的微流体装置以及使用场效应晶体管和微流体装置检测具有硫醇基的分析物的方法
公开(公告)号：US08293591B2
公开(公告)日：2012-10-23
申请号：US11733539
申请日：2007-04-10
申请人： Jeo-young Shim , Kyu-tae Yoo , Kyu-sang Lee , Won-seok Chung , Yeon-ja Cho , Chang-eun Yoo
发明人： Jeo-young Shim , Kyu-tae Yoo , Kyu-sang Lee , Won-seok Chung , Yeon-ja Cho , Chang-eun Yoo
IPC分类号： H01L31/00
CPC分类号： H01L29/78 , G01N27/4145
摘要： A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.
摘要翻译：用于检测具有硫醇基的分析物的场效应晶体管包括在衬底上彼此分开形成的衬底，源极区和漏极区，源极区和漏极区被掺杂，使得源极和漏极的极性区域与基板的极性相反，设置在源极区域和漏极区域之间的沟道区域，由电绝缘材料形成并设置在沟道区域上的绝缘层，设置在绝缘层上的金层和参考电极与金层分开设置。

28. 发明授权

US07943970B2 Method of detecting bio-molecules using the same field effect transistor on the gate sensing surface 有权
标题翻译：使用栅极感应表面上相同的场效应晶体管检测生物分子的方法
公开(公告)号：US07943970B2
公开(公告)日：2011-05-17
申请号：US11695886
申请日：2007-04-03
申请人： Kyu-tae Yoo , Kyu-sang Lee , Jeo-young Shim , Won-seok Chung , Yeon-ja Cho
发明人： Kyu-tae Yoo , Kyu-sang Lee , Jeo-young Shim , Won-seok Chung , Yeon-ja Cho
IPC分类号： G01N27/403
CPC分类号： G01N33/54373 , G01N27/4145
摘要： Provided is a method of detecting the presence of a target bio-molecule or a concentration of the bio-molecule using a field effect transistor. The method includes: contacting a first sample having a first target bio-molecule with a reference electrode of a field effect transistor; measuring a first electric signal change of the field effect transistor; contacting a second sample with a sensing surface of the same field effect transistor; measuring a second electric signal change of the field effect transistor; and comparing the first electric signal with the second electric signal.
摘要翻译：提供了使用场效应晶体管检测目标生物分子的存在或生物分子的浓度的方法。该方法包括：将具有第一目标生物分子的第一样品与场效应晶体管的参比电极接触; 测量场效应晶体管的第一电信号变化; 使第二样品与相同场效应晶体管的感测表面接触; 测量场效应晶体管的第二电信号变化; 以及将所述第一电信号与所述第二电信号进行比较。

29. 发明申请

US20070235760A1 FIELD EFFECT TRANSISTOR COMPRISING GOLD LAYER, MICROFLUIDIC DEVICE COMPRISING THE FIELD EFFECT TRANSISTOR, AND METHOD OF DETECTING ANALYTE HAVING THIOL GROUP USING THE FIELD EFFECT TRANSISTOR AND THE MICROFLUIDIC DEVICE 有权
标题翻译：包含金层的场效应晶体管，包含场效应晶体管的微流体器件，以及使用场效应晶体管和微流体器件检测具有THIOL组的分析物的方法
公开(公告)号：US20070235760A1
公开(公告)日：2007-10-11
申请号：US11733539
申请日：2007-04-10
申请人： Jeo-young Shim , Kyu-tae Yoo , Kyu-sang Lee , Won-seok Chung , Yeon-ja Cho , Chang-eun Yoo
发明人： Jeo-young Shim , Kyu-tae Yoo , Kyu-sang Lee , Won-seok Chung , Yeon-ja Cho , Chang-eun Yoo
IPC分类号： H01L31/00
CPC分类号： H01L29/78 , G01N27/4145
摘要： A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.
摘要翻译：用于检测具有硫醇基的分析物的场效应晶体管包括在衬底上彼此分开形成的衬底，源极区和漏极区，源极区和漏极区被掺杂，使得源极和漏极的极性区域与基板的极性相反，设置在源极区域和漏极区域之间的沟道区域，由电绝缘材料形成并设置在沟道区域上的绝缘层，设置在绝缘层上的金层和参考电极与金层分开设置。

30. 发明授权

US07700290B2 Method of manufacturing DNA chip 失效
标题翻译：制造DNA芯片的方法
公开(公告)号：US07700290B2
公开(公告)日：2010-04-20
申请号：US11479306
申请日：2006-06-30
申请人： Jeo-young Shim , Soo-suk Lee , Chin-sung Park , Kyu-youn Hwang
发明人： Jeo-young Shim , Soo-suk Lee , Chin-sung Park , Kyu-youn Hwang
IPC分类号： C12Q1/68 , C12M1/00 , C12M3/00
CPC分类号： B01L3/50857 , B01L2200/12 , B01L2300/0636 , B01L2300/0819 , B82Y10/00 , G01N27/4145 , H01L21/823828 , H01L51/0093 , H01L51/0545 , Y10T436/2575
摘要： A method of manufacturing a DNA (deoxyribonucleic acid) chip is provided. The DNA chip has a plurality of transistors formed on a substrate and an organic layer and a DNA probe sequentially stacked on a gate of the transistor. The method includes forming an inter-layer insulation layer on the substrate to cover the transistors, planarizing the inter-layer insulation layer, forming at least two contact holes exposing gate electrodes of the transistors in the inter-layer insulation layer, selectively forming organic layers on the exposed gate electrodes, attaching a first DFR (dry film resist) layer to the upper surface of the inter-layer insulation layer to cover the contact holes, removing a portion of the first DFR layer covering a first contact hole among the contact holes, attaching a first DNA probe to the organic layers in the first contact hole, and removing a remaining portion of the first DFR layer.
摘要翻译：提供了DNA（脱氧核糖核酸）芯片的制造方法。 DNA芯片具有形成在基板上的多个晶体管，并且顺序层叠在晶体管的栅极上的有机层和DNA探针。该方法包括在衬底上形成层间绝缘层以覆盖晶体管，平坦化层间绝缘层，形成暴露在层间绝缘层中的晶体管的栅电极的至少两个接触孔，选择性地形成有机层在暴露的栅电极上，将第一DFR（干膜抗蚀剂）层附着到层间绝缘层的上表面以覆盖接触孔，去除覆盖接触孔中的第一接触孔的第一DFR层的一部分将第一DNA探针连接到第一接触孔中的有机层，以及去除第一DFR层的剩余部分。

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