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    • 23. 发明申请
    • THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF
    • 薄膜晶体管面板及其制作方法
    • US20110012203A1
    • 2011-01-20
    • US12605566
    • 2009-10-26
    • Chang-Oh JEONGDong-Hoon LEE
    • Chang-Oh JEONGDong-Hoon LEE
    • H01L27/088H01L21/84
    • H01L27/12H01L27/124H01L29/41733H01L29/66765
    • A thin film transistor panel includes; an insulating substrate, a gate line including a gate electrode disposed on the insulating substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a sidewall, a data line including a source electrode disposed on the semiconductor layer, a drain electrode disposed substantially opposite to and spaced apart from the source electrode, a first protective film disposed on the data line, the first protective film including a sidewall, a second protective film disposed on the first protective film and including a sidewall, and a pixel electrode electrically connected to the drain electrode, wherein the sidewall of the second protective film is disposed inside an area where the sidewall of the first protective film is disposed, and the source electrode and the drain electrode cover the sidewall of the semiconductor layer.
    • 薄膜晶体管面板包括: 绝缘基板,包括设置在绝缘基板上的栅电极的栅极线,设置在栅极上的栅极绝缘层,设置在栅极绝缘层上的半导体层,包括侧壁的半导体层,包括源极的数据线 设置在所述半导体层上的电极,与所述源极电极基本相对并间隔设置的漏电极,设置在所述数据线上的第一保护膜,所述第一保护膜包括侧壁,设置在所述第一保护膜上的第二保护膜 并且包括侧壁和与漏电极电连接的像素电极,其中第二保护膜的侧壁设置在设置有第一保护膜的侧壁的区域的内侧,源电极和漏电极覆盖 半导体层的侧壁。