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    • 22. 发明申请
    • Schottky diode-based noise-removing semiconductor device and fabrication method therefor
    • 基于肖特基二极管的去噪半导体器件及其制造方法
    • US20060181824A1
    • 2006-08-17
    • US11337572
    • 2006-01-24
    • Dong-sik ShimJa-nam KuYoung-hoon MinIl-jong SongHyung Choi
    • Dong-sik ShimJa-nam KuYoung-hoon MinIl-jong SongHyung Choi
    • H02H9/00
    • H01L27/0814H01L27/095H01L29/872
    • A semiconductor device using schottky diodes for removing noise, a fabrication method, and an electrostatic discharge prevention device are provided. The semiconductor device includes a P-well substrate; insulation layers deposited on etched regions of the substrate; an N-well layer deposited on an etched region of the P-well substrate between the insulation layers; P+ type implants injected to a first region and a second region of the N-well layer; and first and second metals formed in schottky contact on the first and second regions, respectively. The method includes etching away regions of a P-well substrate and depositing an insulation substance; etching away the P-well substrate and depositing the insulation substance between the insulation layers to create an N-well layer; injecting P+ type implants to a first region and a second region of the N-well layer; and forming first and second metals in schottky contact on the first and second regions, respectively.
    • 提供了一种使用用于去除噪声的肖特基二极管的半导体器件,制造方法和静电放电防止装置。 半导体器件包括P阱衬底; 沉积在衬底的蚀刻区域上的绝缘层; 在所述绝缘层之间沉积在所述P阱衬底的蚀刻区域上的N阱层; 注射到N阱层的第一区域和第二区域的P + 以及分别在第一和第二区域上以肖特基接触形成的第一和第二金属。 该方法包括蚀刻掉P阱衬底的区域并沉积绝缘物质; 蚀刻P阱衬底并将绝缘物质沉积在绝缘层之间以产生N阱层; 将P + SUP +型植入物注入N阱层的第一区域和第二区域; 以及分别在所述第一和第二区域上形成肖特基接触的第一和第二金属。
    • 23. 发明授权
    • Surface mounted device type package using coaxial cable
    • 表面贴装式使用同轴电缆的封装
    • US07025845B2
    • 2006-04-11
    • US10247300
    • 2002-09-20
    • Il-jong SongJa-nam Ku
    • Il-jong SongJa-nam Ku
    • H01F41/04
    • H01L23/66H01L2223/6622H01L2223/6627H01L2924/0002H01L2924/09701H01L2924/1903H05K1/0243H01L2924/00
    • A surface mounted device (SMD) package using coaxial cables and a method of manufacturing the SMD by forming green sheets and selecting portions for mounting the coaxial cables on the green sheets and forming holes in the portions selected, stacking and heating the green sheets having the holes, and inserting the coaxial cables into the holes of the green sheets. The SMD includes a device mounting unit formed in the package for mounting a high frequency electronic device which transmits and receives high frequency signals, transmission lines electrically connected to the high frequency electronic device, and the coaxial cables penetrating internal and external portions of the package and including internal lead wires which contact the transmission lines. The SMD package is formed to conveniently transfer high frequency signals without the signal transfer loss.
    • 一种使用同轴电缆的表面安装器件(SMD)封装件,以及通过形成生片来制造SMD的方法,以及选择用于将同轴电缆安装在生片上的选择部分和在所选择的部分中形成孔,堆叠和加热具有 孔,并将同轴电缆插入生片的孔中。 SMD包括形成在封装中的装置安装单元,用于安装高频电子装置,其传送和接收高频信号,电连接到高频电子装置的传输线以及穿过封装的内部和外部部分的同轴电缆; 包括接触传输线的内部引线。 SMD封装形成方便地传输高频信号而没有信号传输损耗。
    • 26. 发明申请
    • Limiter for controlling overvoltage and RFID tag having the same
    • 用于控制过电压的限制器和具有相同功能的RFID标签
    • US20070152827A1
    • 2007-07-05
    • US11486279
    • 2006-07-14
    • Il-jong SongYoung-hoon MinChol-su YoonDong-sik Shim
    • Il-jong SongYoung-hoon MinChol-su YoonDong-sik Shim
    • G08B13/14H04Q5/22G08B23/00
    • G06K19/0723
    • A limiter for controlling an overvoltage and an RFID tag having the same are provided. The limiter includes a first limiter part and a second limiter part serially connected to the first limiter part. The second limiter part has at least one limit diode whose threshold voltage is lower than that of elements in the first limiter part. Accordingly, if an overvoltage is input, the limiter can maximize the input current drop so that the limiter can maximize the leakage voltage. As a result, the RFID tag can prevent the RFID driving part from being damaged due to the overvoltage. In addition, the RFID tag can normally operate regardless of the intensity of the driving voltage input from the RFID reader, so that the yields of products can improve.
    • 提供了用于控制过电压的限制器和具有该限制器的RFID标签。 限幅器包括与第一限幅器部分串联连接的第一限幅器部分和第二限幅器部分。 第二限幅器部分具有至少一个限制二极管,其阈值电压低于第一限幅器部分中的元件的阈值电压。 因此,如果输入过电压,则限幅器可以使输入电流下降最大化,使得限幅器可以使漏电压最大化。 结果,RFID标签可以防止RFID驱动部件由于过电压而被损坏。 此外,RFID标签可以正常工作,而与RFID读取器输入的驱动电压的强度无关,从而可以提高产品的产量。
    • 28. 发明授权
    • Limiter for controlling overvoltage and RFID tag having the same
    • 用于控制过电压的限制器和具有相同功能的RFID标签
    • US07482930B2
    • 2009-01-27
    • US11486279
    • 2006-07-14
    • Il-jong SongYoung-hoon MinChol-su YoonDong-sik Shim
    • Il-jong SongYoung-hoon MinChol-su YoonDong-sik Shim
    • G08B13/14
    • G06K19/0723
    • A limiter for controlling an overvoltage and an RFID tag having the same are provided. The limiter includes a first limiter part and a second limiter part serially connected to the first limiter part. The second limiter part has at least one limit diode whose threshold voltage is lower than that of elements in the first limiter part. Accordingly, if an overvoltage is input, the limiter can maximize the input current drop so that the limiter can maximize the leakage voltage. As a result, the RFID tag can prevent the RFID driving part from being damaged due to the overvoltage. In addition, the RFID tag can normally operate regardless of the intensity of the driving voltage input from the RFID reader, so that the yields of products can improve.
    • 提供了用于控制过电压的限制器和具有该限制器的RFID标签。 限幅器包括与第一限幅器部分串联连接的第一限幅器部分和第二限幅器部分。 第二限幅器部分具有至少一个限制二极管,其阈值电压低于第一限幅器部分中的元件的阈值电压。 因此,如果输入过电压,则限幅器可以使输入电流下降最大化,使得限幅器可以使漏电压最大化。 结果,RFID标签可以防止RFID驱动部件由于过电压而被损坏。 此外,RFID标签可以正常工作,而与RFID读取器输入的驱动电压的强度无关,从而可以提高产品的产量。
    • 29. 发明申请
    • INTERNAL VOLTAGE GENERATING CIRCUIT AND SMART CARD
    • 内部电压产生电路和智能卡
    • US20120318875A1
    • 2012-12-20
    • US13523518
    • 2012-06-14
    • Jong-pil ChoIl-jong SongSang-hyo Lee
    • Jong-pil ChoIl-jong SongSang-hyo Lee
    • G05F3/02G06K19/073
    • G06K19/0715G05F1/56G06K19/0723G06K19/07769
    • An internal voltage generating circuit includes a first voltage application unit, a second voltage application unit, a first regulator, a second regulator, and a controller. The first and second voltage application units respectively provide a first voltage and a second voltage. The controller generates a bulk voltage, a first control signal, and a second control signal from the first and second voltages. The first regulator is enabled or disabled according to the first control signal and generates and outputs the first internal voltage based on the bulk voltage, the first voltage, and a first reference voltage. The second regulator is enabled or disabled according to the second control signal and generates and outputs the second internal voltage based on the bulk voltage, the second voltage, and a second reference voltage.
    • 内部电压产生电路包括第一电压施加单元,第二电压施加单元,第一调节器,第二调节器和控制器。 第一和第二电压施加单元分别提供第一电压和第二电压。 控制器从第一和第二电压产生体电压,第一控制信号和第二控制信号。 第一调节器根据第一控制信号被使能或禁止,并且基于体电压,第一电压和第一参考电压产生并输出第一内部电压。 第二调节器根据第二控制信号被使能或禁止,并且基于体电压,第二电压和第二参考电压产生并输出第二内部电压。