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21. 发明申请

US20110306211A1 Stabilized Chemical Mechanical Polishing Composition And Method Of Polishing A Substrate 有权
标题翻译：稳定的化学机械抛光组合物和抛光底物的方法
公开(公告)号：US20110306211A1
公开(公告)日：2011-12-15
申请号：US12815564
申请日：2010-06-15
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamarityl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.
摘要翻译：化学机械抛光组合物，其包含作为初始组分的水; 0.1〜40重量％的平均粒径为5〜150nm的研磨剂; 0.001至1重量％的根据式（II）的金属物质; 0至1重量％的式（I）的二季物质; 和0〜1重量％的季铵化合物。此外，提供了使用化学机械抛光组合物的化学机械抛光的方法。

22. 发明申请

US20110230050A1 METHOD OF POLISHING A SUBSTRATE COMPRISING POLYSILICON AND AT LEAST ONE OF SILICON OXIDE AND SILICON NITRIDE 有权
标题翻译：抛光包含多晶硅和至少一种氧化硅和氮化硅的基材的方法
公开(公告)号：US20110230050A1
公开(公告)日：2011-09-22
申请号：US12724990
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂烷基芳基聚醚磺酸酯化合物，其中烷基芳基聚醚磺酸酯化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。

23. 发明申请

US20100279507A1 Method for chemical mechanical polishing a substrate 有权
标题翻译：化学机械抛光基材的方法
公开(公告)号：US20100279507A1
公开(公告)日：2010-11-04
申请号：US12432021
申请日：2009-04-29
申请人： Yi Guo , Zhendong Liu
发明人： Yi Guo , Zhendong Liu
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, an abrasive; a diquaternary cation according to formula (I); and optionally a quaternary alkylammonium compound; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min.
摘要翻译：一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括二氧化硅; 提供化学机械抛光组合物，其中所述化学机械抛光组合物包括：水，研磨剂; 式（I）的二季阳离子; 和任选的季烷基铵化合物; 提供化学机械抛光垫; 在化学机械抛光垫和基底之间的界面处产生动态接触; 以及将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物的pH为2至6; 其中化学机械抛光组合物的二氧化硅去除率至少为1500埃/分钟。

24. 发明申请

US20080119052A1 Selective barrier metal polishing method 有权
标题翻译：选择性屏障金属抛光方法
公开(公告)号：US20080119052A1
公开(公告)日：2008-05-22
申请号：US11975804
申请日：2007-10-22
申请人： Zhendong Liu , Ross E. Barker
发明人： Zhendong Liu , Ross E. Barker
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.
摘要翻译：抛光方法使用在互连金属和电介质存在下去除阻挡材料的抛光溶液。抛光溶液以重量百分比计包含0.1至10种过氧化氢，至少一种选自硝酸，硫酸，盐酸和磷酸的pH调节剂，用于将抛光溶液的pH值调节至小于 3，至少含有0.0025的苯并三唑抑制剂，用于降低互连金属的去除速率，0至10表面活性剂，0.01至10个平均粒度小于50nm的胶体二氧化硅，余量为水和附带杂质。抛光溶液的氮化钽材料至铜选择性为至少3比1，氮化钽至TEOS选择性为至少3比1。

25. 发明授权

US06971945B2 Multi-step polishing solution for chemical mechanical planarization 失效
标题翻译：用于化学机械平面化的多步抛光溶液
公开(公告)号：US06971945B2
公开(公告)日：2005-12-06
申请号：US10785362
申请日：2004-02-23
申请人： Zhendong Liu , John Quanci , Robert E. Schmidt , Terence M. Thomas
发明人： Zhendong Liu , John Quanci , Robert E. Schmidt , Terence M. Thomas
IPC分类号： B24B37/00 , B24B1/00 , B44C1/22 , C09K3/14 , C23F1/00 , H01L21/304
CPC分类号： C23F3/06 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.
摘要翻译：本发明提供了一种用于从半导体晶片抛光钽阻挡材料和铜的多步水性组合物，其包含重量百分比为0.1至30的氧化剂，0.01至3种无机盐或酸，0.01至4种抑制剂，0.1至30种研磨剂 0〜15络合剂和余量水，其中，所述水性组合物的pH为1.5〜6。

26. 发明申请

US20050031789A1 Composition for polishing semiconductor layers 有权
标题翻译：用于研磨半导体层的组合物
公开(公告)号：US20050031789A1
公开(公告)日：2005-02-10
申请号：US10634437
申请日：2003-08-05
申请人： Zhendong Liu , John Quanci
发明人： Zhendong Liu , John Quanci
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/321 , B05D3/04 , B05D3/10
CPC分类号： C09G1/02 , H01L21/31053 , H01L21/3212
摘要： An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.
摘要翻译：水性抛光组合物包含用于限制去除具有酸性pH的互连金属的腐蚀抑制剂。该组合物包括由R 1，R 2，R 3和R 4形成的含有机铵铵盐为自由基，R 1具有2至15个碳原子的碳链长度。含有机铵盐具有加速TEOS去除并降低从SiC，SiCN，Si 3 N 4和SiCO组成的组中选择的至少一种涂层的去除的浓度。

27. 发明申请

US20050029491A1 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers 有权
标题翻译：用于减少半导体晶片腐蚀的化学机械平面化组合物
公开(公告)号：US20050029491A1
公开(公告)日：2005-02-10
申请号：US10634964
申请日：2003-08-05
申请人： Zhendong Liu
发明人： Zhendong Liu
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/321 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： An aqueous chemical mechanical planarizing composition includes an oxidizer for promoting barrier removal and an abrasive. Inhibitor decreases removals of a metal interconnect. The composition has a carboxylic acid polymer having at least one repeat unit of the polymer comprising at least two carboxylic acid functionalities, a pH of less than or equal to 4 and a tantalum nitride removal rate of at least eighty percent of copper removal rate at a pad pressure of 13.8 kPa.
摘要翻译：水性化学机械平面化组合物包括用于促进屏障去除的氧化剂和研磨剂。抑制剂减少金属互连的去除。所述组合物具有羧酸聚合物，所述羧酸聚合物具有聚合物的至少一个重复单元，所述重复单元包含至少两种羧酸官能团，pH小于或等于4，氮化钽去除速率为至少80％的铜去除速率垫压为13.8 kPa。

28. 发明授权

US08513126B2 Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate 有权
标题翻译：具有可调电介质抛光选择性的浆料组合物和抛光基材的方法
公开(公告)号：US08513126B2
公开(公告)日：2013-08-20
申请号：US12887963
申请日：2010-09-22
申请人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , C09G1/02
摘要： A chemical mechanical polishing slurry composition is provided, having, as initial components: water; an abrasive, wherein the abrasive is colloidal silica abrasive; a halogenated quaternary ammonium compound according to formula (I); optionally, a diquaternary substance according to formula (II); and, optionally, a pH adjusting agent selected from phosphoric acid, nitric acid, sulfuric acid, hydrochloric acid, ammonium hydroxide and potassium hydroxide; wherein the chemical mechanical polishing slurry composition has a pH of 2 to
摘要翻译：提供化学机械抛光浆料组合物，其具有作为初始组分的水; 磨料，其中磨料是胶体二氧化硅磨料; 根据式（I）的卤代季铵化合物; 任选地，根据式（II）的二季物质; 和任选的选自磷酸，硝酸，硫酸，盐酸，氢氧化铵和氢氧化钾的pH调节剂; 其中所述化学机械抛光浆料组合物的pH为2至<7。此外，提供了制备化学机械抛光浆料组合物和使用化学机械抛光组合物来抛光基材的方法。

29. 发明授权

US08496843B2 Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride 有权
标题翻译：抛光包括多晶硅和至少一种氧化硅和氮化硅的衬底的方法
公开(公告)号：US08496843B2
公开(公告)日：2013-07-30
申请号：US12724990
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂烷基芳基聚醚磺酸酯化合物，其中烷基芳基聚醚磺酸酯化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。

30. 发明授权

US08232208B2 Stabilized chemical mechanical polishing composition and method of polishing a substrate 有权
标题翻译：稳定的化学机械抛光组合物和抛光基材的方法
公开(公告)号：US08232208B2
公开(公告)日：2012-07-31
申请号：US12815564
申请日：2010-06-15
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamantyl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.
摘要翻译：化学机械抛光组合物，其包含作为初始组分的水; 0.1〜40重量％的平均粒径为5〜150nm的研磨剂; 0.001至1重量％的根据式（II）的金刚烷基物质; 0至1重量％的式（I）的二季物质; 和0〜1重量％的季铵化合物。此外，提供了使用化学机械抛光组合物的化学机械抛光的方法。

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