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    • 27. 发明授权
    • Display substrate having the same and method of manufacturing the display substrate
    • 具有相同的显示基板和制造显示基板的方法
    • US07915614B2
    • 2011-03-29
    • US12027102
    • 2008-02-06
    • Kyoung-Ju ShinJang-Soo KimChong-Chul Chai
    • Kyoung-Ju ShinJang-Soo KimChong-Chul Chai
    • H01L33/38
    • G02F1/136213G02F2001/136222
    • A display substrate includes a thin-film transistor (TFT) layer, a color filter layer and a pixel electrode formed on a substrate. The TFT layer includes a gate line, a data line electrically insulated from the gate line and extending in a direction different from the gate line, a TFT electrically connected to the gate line and the data line, and a storage electrode formed from the same layer as the gate line in each pixel. The color filter layer includes a storage hole extending to a portion of the TFT layer corresponding to the storage electrode. The storage hole has a horizontal cross-sectional area greater than the storage electrode, wherein the horizontal cross-sectional area is measured in a plane parallel to the substrate. The pixel electrode is formed on the color filter layer and in the storage hole to form a storage capacitor with the storage electrode.
    • 显示基板包括薄膜晶体管(TFT)层,滤色器层和形成在基板上的像素电极。 TFT层包括栅极线,与栅极线电绝缘并沿与栅极线不同的方向延伸的数据线,与栅极线和数据线电连接的TFT,以及由同一层形成的存储电极 作为每个像素中的栅极线。 滤色器层包括延伸到对应于存储电极的TFT层的一部分的存储孔。 存储孔具有大于存储电极的水平横截面积,其中在平行于衬底的平面中测量水平横截面面积。 像素电极形成在滤色器层和存储孔中,以与存储电极形成存储电容器。
    • 28. 发明授权
    • Thin film diode panel and manufacturing method of the same
    • 薄膜二极管面板及其制造方法相同
    • US07839463B2
    • 2010-11-23
    • US10578028
    • 2004-10-28
    • Kyoung-Ju ShinChong-Chul ChaiJoon-Hak OhJin-Hong KimSung-Jin Hong
    • Kyoung-Ju ShinChong-Chul ChaiJoon-Hak OhJin-Hong KimSung-Jin Hong
    • G02F1/136
    • G02F1/1365G02F1/13624G02F1/136286G02F2001/13629
    • A thin film diode array panel comprising: an insulating substrate (110); first and second redundant gate lines (141, 142) made of an opaque conductor and formed on the insulating substrate; first and second floating electrodes (143, 144) made of an opaque conductor, formed on the insulating substrate, and disposed between the first and second redundant gate lines (141, 142); an insulating layer (151, 152) formed on the first and second floating electrodes (143, 144); a first gate line (121) formed on the first redundant gate line (141) and including a first input electrode (123) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first input electrode and the first floating electrode; a second gate line (122) formed on the second redundant gate line (142) and including a second input electrode (124) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second input electrode (124) and the second floating electrode (144); and a pixel electrode (190) including a first contact electrode (191) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first contact electrode (191) and the first floating electrode (143), a second contact electrode (192) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second contact electrode (192) and the second floating electrode (144), and a main body is provided.
    • 一种薄膜二极管阵列面板,包括:绝缘衬底(110); 第一和第二冗余栅极线(141,142),由不透明导体制成并形成在绝缘基板上; 第一和第二浮置电极(143,144),由不透明导体制成,形成在所述绝缘基板上,并设置在所述第一和第二冗余栅极线(141,142)之间; 形成在第一和第二浮置电极(143,144)上的绝缘层(151,152); 第一栅极线(121),形成在所述第一冗余栅极线(141)上并且包括与所述第一浮置电极(143)重叠的第一输入电极(123),其中所述绝缘层(151)插入在所述第一输入电极和 第一浮动电极; 形成在第二冗余栅极线(142)上并包括与第二浮置电极(144)重叠的第二输入电极(124)的第二栅极线(122),其中绝缘层(152)介于第二输入电极 )和第二浮置电极(144); 和包括与所述第一浮动电极(143)重叠的第一接触电极(191)的像素电极(190),其中所述绝缘层(151)插入在所述第一接触电极(191)和所述第一浮动电极(143)之间, 与第二接触电极(192)和第二浮动电极(144)之间插入绝缘层(152)的第二浮动电极(144)重叠的第二接触电极(192)和主体。
    • 30. 发明授权
    • Multi-domain liquid crystal display and a thin film transistor substrate of the same
    • 多畴液晶显示器和薄膜晶体管基板相同
    • US07253849B2
    • 2007-08-07
    • US10510013
    • 2002-07-24
    • Kyoung-Ju ShinHee-Seob KimSung-Kyu HongBaek-Woon Lee
    • Kyoung-Ju ShinHee-Seob KimSung-Kyu HongBaek-Woon Lee
    • G02F1/1368G02F1/139H01L21/336H01L29/786
    • G02F1/133707G02F1/13624
    • A thin film transistor array panel is provided, which includes: a gate wire formed on an insulating substrate; a data wire formed on the insulating substrate, insulated from the gate wire, and intersecting the gate wire; a storage electrode wire formed on the insulating substrate, insulated from the data wire, and intersecting the data wire; a plurality of pixel electrodes provided on the respective pixel areas defined by the intersections of the gate wire and the data wire, each pixel electrode having a cutout; a plurality of direction control electrodes provided on the respective pixel areas defined by the intersections of the gate wire and the data wire; a plurality of first thin film transistors connected to the gate wire, the data wire, and the pixel electrodes; and a plurality of second thin film transistors connected to the gate wire, the storage electrode wire, and the direction control electrodes.
    • 提供薄膜晶体管阵列面板,其包括:形成在绝缘基板上的栅极线; 数据线,形成在所述绝缘基板上,与所述栅极线绝缘并且与所述栅极线相交; 存储电极线,形成在所述绝缘基板上,与所述数据线绝缘并且与所述数据线相交; 设置在由栅极线和数据线的交叉点限定的各个像素区域上的多个像素电极,每个像素电极具有切口; 设置在由栅极线和数据线的交叉点限定的各个像素区域上的多个方向控制电极; 连接到栅极线,数据线和像素电极的多个第一薄膜晶体管; 以及连接到栅极线,存储电极线和方向控制电极的多个第二薄膜晶体管。