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21. 发明申请

US20070166645A1 Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same 审中-公开
标题翻译：硫族化物前体化合物和使用其制备硫属化物薄膜的方法
公开(公告)号：US20070166645A1
公开(公告)日：2007-07-19
申请号：US11412028
申请日：2006-04-26
申请人： Hyun Jeong , Jong Seon , Hyeon Shin , Sang Hyun
发明人： Hyun Jeong , Jong Seon , Hyeon Shin , Sang Hyun
IPC分类号： G11B7/24
CPC分类号： C23C26/02 , C07F3/003 , C23C2/04
摘要： Disclosed herein are a soluble chalcogenide precursor compound and a method for preparing a chalcogenide thin film using the precursor compound by a solution deposition process, e.g., spin coating or dip coating. In the method, the use of the chalcogenide precursor as an inorganic semiconductor material soluble in organic solvents enables the preparation of a semiconductor thin film having excellent electrical and physical properties (e.g., crystallinity). In addition, a large-area thin film can be prepared by a solution deposition process, thus contributing to the simplification of procedures and reduction of preparation costs. Therefore, the method can be effectively applied in a wide variety of fields, such as thin film transistors, electroluminescent devices, photovoltaic cells and memory devices.
摘要翻译：本文公开了一种可溶性硫族化物前体化合物和使用前体化合物通过溶液沉积方法如旋涂或浸涂制备硫族化物薄膜的方法。在该方法中，作为可溶于有机溶剂的无机半导体材料的硫族化物前体的使用使得能够制备具有优异的电学和物理性质（例如结晶度）的半导体薄膜。此外，可以通过溶液沉积工艺制备大面积薄膜，从而有助于简化程序和降低制备成本。因此，该方法可以有效地应用于薄膜晶体管，电致发光器件，光伏电池和存储器件等各种领域。

22. 发明申请

US20060175685A1 Composition for forming low-dielectric constant film comprising fullerene, low-dielectric constant film formed from the composition and method for forming the low-dielectric constant film 审中-公开
标题翻译：用于形成包含富勒烯的低介电常数膜的组合物，由该组合物形成的低介电常数膜和形成低介电常数膜的方法
公开(公告)号：US20060175685A1
公开(公告)日：2006-08-10
申请号：US11347238
申请日：2006-02-06
申请人： Hyeon Shin , Hyun Jeong , Jong Seon
发明人： Hyeon Shin , Hyun Jeong , Jong Seon
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L23/5329 , B82Y10/00 , B82Y30/00 , C08G77/18 , C08G77/20 , C08L83/04 , C08L83/06 , C08L83/14 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/3122 , H01L21/31695 , H01L51/0046 , H01L2924/0002 , H01L2924/00
摘要： A composition for forming a low-dielectric constant film comprising a substituted fullerene, a low-dielectric constant film formed from the composition, and a method for forming the low-dielectric constant film are provided. The low-dielectric constant film has superior mechanical properties, such as hardness and elastic modulus, and excellent thermal conductivity.
摘要翻译：提供一种用于形成包含取代的富勒烯的低介电常数膜的组合物，由该组合物形成的低介电常数膜以及形成低介电常数膜的方法。低介电常数膜具有优异的机械性能，例如硬度和弹性模量，以及优异的导热性。

23. 发明申请

US20060175683A1 Composition for forming low dielectric thin film including siloxane monomer or siloxane polymer having only one type of stereoisomer and method of producing low dielectric thin film using same 失效
标题翻译：用于形成包含仅具有一种立体异构体的硅氧烷单体或硅氧烷聚合物的低电介质薄膜的组合物和使用其制备低电介质薄膜的方法
公开(公告)号：US20060175683A1
公开(公告)日：2006-08-10
申请号：US11218753
申请日：2005-09-06
申请人： Hyeon Shin , Hyun Jeong
发明人： Hyeon Shin , Hyun Jeong
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L23/5329 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695 , H01L2924/0002 , Y10T428/31663 , H01L2924/00
摘要： Disclosed herein is a composition for forming a low dielectric thin film, which includes silane monomers having only any one of stereoisomer, or a siloxane polymer produced by polymerizing the monomers, and a method of producing the low dielectric thin film using the same. When using the composition, mechanical properties are excellent because tacticity of a matrix is improved, and formation of pores is increased due to a molecular free volume, thus it is possible to produce a low dielectric thin film having low dielectricity.
摘要翻译：本文公开了用于形成低电介质薄膜的组合物，其包括仅具有任何一种立体异构体的硅烷单体或通过聚合单体制备的硅氧烷聚合物，以及使用其制备低电介质薄膜的方法。当使用组合物时，机械性能是优异的，因为基质的立构规整性得到改善，并且由于无分子体积而增加孔的形成，因此可以制备具有低介电性的低电介质薄膜。

24. 发明申请

US20060110940A1 Method of preparing mesoporous thin film having low dielectric constant 审中-公开
标题翻译：制备介电常数薄介孔薄膜的方法
公开(公告)号：US20060110940A1
公开(公告)日：2006-05-25
申请号：US11283926
申请日：2005-11-22
申请人： Jong Seon , Hyeon Shin , Hyun Jeong , Ji Kim
发明人： Jong Seon , Hyeon Shin , Hyun Jeong , Ji Kim
IPC分类号： H01L21/469
CPC分类号： C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695
摘要： A method of preparing a mesoporous thin film having a low dielectric constant, which includes mixing a cyclic siloxane-based monomer, an organic solvent, an acid catalyst or a base catalyst, and water, to prepare a coating solution, which is then applied on a substrate and heat cured. The mesoporous thin film of the current invention may exhibit excellent physical properties including hardness and elastic modulus, and may have a low dielectric constant of 2.5 or less, and thus, may be used to manufacture semiconductors.
摘要翻译：一种制备具有低介电常数的中孔薄膜的方法，其包括将环状硅氧烷类单体，有机溶剂，酸催化剂或碱催化剂与水混合，制备涂布溶液，然后将其涂布在底物并加热固化。本发明的介孔薄膜可以表现出优异的物理性能，包括硬度和弹性模量，并且可以具有2.5或更低的低介电常数，因此可用于制造半导体。

25. 发明申请

US20070090346A1 Porous chalcogenide thin film, method for preparing the same and electronic device using the same 审中-公开
标题翻译：多孔硫族化物薄膜，其制备方法和使用其的电子器件
公开(公告)号：US20070090346A1
公开(公告)日：2007-04-26
申请号：US11439036
申请日：2006-05-23
申请人： Hyun Jeong , Jong Seon , Hyeon Shin , Sang Hyun
发明人： Hyun Jeong , Jong Seon , Hyeon Shin , Sang Hyun
IPC分类号： C01G11/02 , H01L29/08 , C07F3/00
CPC分类号： C07F3/003 , H01L21/32055 , H01L31/18 , H01L31/1828
摘要： A porous chalcogenide thin film having a microporous structure, a method for preparing the chalcogenide thin film and an electronic device employing the chalcogenide thin film, are provided. The porous chalcogenide thin film has superior crystallinity and can be applied as a semiconductor layer having superior electrical properties to the fabrication of devices by inserting functional metal or semiconductor nanoparticles into nanopores of the thin film.
摘要翻译：提供具有微孔结构的多孔硫族化物薄膜，制备硫族化物薄膜的方法和采用硫族化物薄膜的电子器件。多孔硫族化物薄膜具有优异的结晶度，并且通过将功能性金属或半导体纳米颗粒插入薄膜的纳米孔中，可以将其应用于具有优异电性能的半导体层与器件的制造。

26. 发明申请

US20060115658A1 Method of producing porous low dielectric thin film 审中-公开
标题翻译：生产多孔低介电薄膜的方法
公开(公告)号：US20060115658A1
公开(公告)日：2006-06-01
申请号：US11290519
申请日：2005-12-01
申请人： Sang Mah , Hyeon Shin , Hyun Jeong
发明人： Sang Mah , Hyeon Shin , Hyun Jeong
IPC分类号： B32B27/28 , C08G77/04 , C08L83/04
CPC分类号： C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/31663
摘要： A method of producing a porous low dielectric thin film is provided. The method comprises conducting hydrolysis and polycondensation of a polyreactive cyclic siloxane compound alone or in conjunction with one or more types of linear siloxane compounds or in conjunction with a Si monomer having an organic leg in the presence of water, organic hydroxide, and an organic solvent to produce a siloxane-based polymer, dissolving the polymer in water or the organic solvent to produce a coating solution, applying the coating solution on a substrate, and heat curing the resulting substrate. Even though a pore forming material is not used, it is possible to produce a porous low dielectric thin film.
摘要翻译：提供一种制造多孔低电介质薄膜的方法。该方法包括单独或与一种或多种类型的直链硅氧烷化合物或与水，有机氢氧化物和有机溶剂存在下具有有机支链的Si单体联合进行多反应性环状硅氧烷化合物的水解和缩聚以制备硅氧烷基聚合物，将聚合物溶解在水或有机溶剂中以产生涂布溶液，将涂布溶液涂布在基材上，并加热固化所得到的基材。即使不使用成孔材料，也可以制造多孔低介电性薄膜。

27. 发明申请

US20060063012A1 Method for preparing low dielectric constant film by using dual organic siloxane precursor 审中-公开
标题翻译：使用双有机硅氧烷前体制备低介电常数膜的方法
公开(公告)号：US20060063012A1
公开(公告)日：2006-03-23
申请号：US11212715
申请日：2005-08-29
申请人： Hyeon Shin , Hyun Jeong , Chi Choi
发明人： Hyeon Shin , Hyun Jeong , Chi Choi
IPC分类号： B32B9/04 , H01L21/31 , C08J7/18 , B05D3/06
CPC分类号： H01L21/3122 , C23C16/401 , H01B3/46 , H01L21/02126 , H01L21/02216 , H01L21/02274 , Y10T428/31663
摘要： A method for preparing a dielectric film. According to the method, a dielectric film is prepared by depositing a dual organic siloxane precursor on a wafer by plasma enhanced chemical vapor deposition (PECVD). Since a dielectric film prepared by the method has a low dielectric constant and shows superior physical properties, such as elastic modulus and hardness, it can be useful as an interlayer dielectric film for a semiconductor device for dual damascene copper interconnects or as a passivation layer for semiconductor and display devices.
摘要翻译：一种制备电介质膜的方法。根据该方法，通过等离子体增强化学气相沉积（PECVD）在晶片上沉积双重有机硅氧烷前体来制备电介质膜。由于通过该方法制备的电介质膜具有低介电常数并且显示出优异的物理性质，例如弹性模量和硬度，因此可用作用于双镶嵌铜互连的半导体器件的层间电介质膜或作为钝化层半导体和显示设备。

28. 发明申请

US20050136268A1 Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane 有权
标题翻译：通过使用多面体分子倍半硅氧烷形成半导体器件的层间绝缘膜的方法
公开(公告)号：US20050136268A1
公开(公告)日：2005-06-23
申请号：US10995211
申请日：2004-11-24
申请人： Hyeon Shin , Hyun Jeong
发明人： Hyeon Shin , Hyun Jeong
IPC分类号： C08G77/04 , C09D5/25 , C09D183/04 , H01L21/312 , H01L21/316 , H01L21/768 , B32B9/04 , H01L21/31 , H01L21/469 , H01L21/4763
CPC分类号： C08G77/04 , C08G77/06 , C08G77/50 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3124 , H01L21/31633 , H01L21/31695 , H01L21/7682 , Y10T428/31663
摘要： Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular silsesquioxane is used as a monomer for a siloxane-based resin or as a pore-forming agent (porogen) to prepare a composition for forming a dielectric film, and the composition is coated on a substrate to form an interlayer dielectric film for a semiconductor device. The interlayer dielectric film formed by the method has a low dielectric constant and shows superior mechanical properties.
摘要翻译：本文公开了一种通过使用多面体分子倍半硅氧烷形成用于半导体器件的层间绝缘膜的方法。根据该方法，使用多面体分子倍半硅氧烷作为硅氧烷类树脂的单体或成孔剂（致孔剂），制备电介质膜形成用组合物，将该组合物涂布在基材上形成用于半导体器件的层间绝缘膜。通过该方法形成的层间绝缘膜具有低介电常数并且显示出优异的机械性能。

29. 发明申请

US20050080214A1 Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer 有权
标题翻译：多功能环状硅酸盐化合物，由该化合物制备的硅氧烷基聚合物和使用聚合物制备绝缘膜的方法
公开(公告)号：US20050080214A1
公开(公告)日：2005-04-14
申请号：US10841553
申请日：2004-05-10
申请人： Hyeon Shin , Hyun Jeong , Jong Seon , Kwang Lee , Sang Mah
发明人： Hyeon Shin , Hyun Jeong , Jong Seon , Kwang Lee , Sang Mah
IPC分类号： B05D5/12 , B05D7/24 , C07F7/18 , C07F7/21 , C08G77/02 , C08G77/04 , C08G77/06 , C08G77/08 , C08G77/14 , C08G77/50 , C09D5/25 , C09D183/02 , C09D183/04 , C09D183/14 , H01L21/312
CPC分类号： C09D183/04 , C08G77/045 , C08G77/06 , C08G77/50 , Y10T428/31663
摘要： A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.
摘要翻译：多官能环状硅酸盐化合物，由硅酸盐化合物制备的硅氧烷类聚合物和使用硅氧烷类聚合物制造绝缘膜的方法。本发明的硅酸盐化合物与常规的孔产生物质高度相容，几乎不吸湿，因此可用于制备适用于SOG工艺的硅氧烷类聚合物。此外，通过使用这种硅氧烷基聚合物制成的膜由于其低吸湿性而具有优异的机械性能，热稳定性和抗裂纹性以及增强的绝缘性能。因此，在半导体制造领域中，该膜作为绝缘膜具有很大的用途。

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