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21. 发明授权

US07639454B2 Perpendicular magnetic recording head comprising gap shield 失效
标题翻译：垂直磁记录头包括间隙屏蔽
公开(公告)号：US07639454B2
公开(公告)日：2009-12-29
申请号：US11493585
申请日：2006-07-27
申请人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim , Young-hun Im
发明人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim , Young-hun Im
IPC分类号： G11B5/11 , G11B5/23
CPC分类号： G11B5/3116 , G11B5/11 , G11B5/1278 , G11B5/3146 , G11B5/315
摘要： A perpendicular magnetic recording head includes: a main pole; a return pole spaced a predetermined gap from the main pole; an induction coil inducing a magnetic field on the main pole; and two or more gap shields, wherein the two or more gap shields are formed in the gap between the main pole and the return pole.
摘要翻译：垂直磁记录头包括：主极; 与主极间隔开预定间隙的返回极; 感应线圈，在主极上引起磁场; 和两个或更多个间隙屏蔽，其中两个或更多个间隙屏蔽形成在主极和返回极之间的间隙中。

22. 发明申请

US20080138659A1 Magnetic domain data storage devices and methods of operating the same 有权
标题翻译：磁畴数据存储设备及其操作方法
公开(公告)号：US20080138659A1
公开(公告)日：2008-06-12
申请号：US11980418
申请日：2007-10-31
申请人： Chee-kheng Lim , In-kyeong Yoo , Sung-hoon Choa
发明人： Chee-kheng Lim , In-kyeong Yoo , Sung-hoon Choa
IPC分类号： G11B5/127 , G11B21/02
CPC分类号： G11C11/14 , G11C19/0808 , G11C19/0841 , G11C21/00 , Y10T428/11
摘要： Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.
摘要翻译：示例性实施例可以使用磁畴壁的移动和/或操作磁畴数据存储设备的方法来提供数据存储设备。数据存储装置可以包括用于写入具有不同方向磁化的两个磁畴的数据的第一磁性层，用于在第一磁性层的一侧存储数据的第二磁性层，连接到第一磁性层的数据记录装置和第二磁性层和被配置为读取第二磁性层的多个读取头。数据存储设备可以存储更大量的数据，而不需要移动机械系统。

23. 发明申请

US20080025060A1 Semiconductor device using magnetic domain wall moving 有权
标题翻译：半导体器件采用磁畴壁移动
公开(公告)号：US20080025060A1
公开(公告)日：2008-01-31
申请号：US11655927
申请日：2007-01-22
申请人： Chee-kheng Lim , Yong-su Kim
发明人： Chee-kheng Lim , Yong-su Kim
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C19/0841 , Y10S977/933
摘要： Provided is a semiconductor device that uses magnetic domain wall movement. The semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not require an additional notch since the magnetic wire includes a magnetic domain wall, the moving distance of which is controlled by a pulse field or a pulse current.
摘要翻译：提供了使用磁畴壁运动的半导体器件。半导体器件包括具有多个磁畴的磁线，其中磁线包括通过脉冲场或脉冲电流移动的磁畴壁。半导体器件的磁线不需要额外的凹口，因为磁线包括磁畴壁，其移动距离由脉冲场或脉冲电流控制。

24. 发明申请

US20050259463A1 Multi-bit magnetic random access memory device 有权
标题翻译：多位磁性随机存取存储器件
公开(公告)号：US20050259463A1
公开(公告)日：2005-11-24
申请号：US11117352
申请日：2005-04-29
申请人： Chee-kheng Lim
发明人： Chee-kheng Lim
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： H01F10/3263 , B82Y25/00 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A multi-bit magnetic random access memory device and a method for writing to and sensing the multi-bit magnetic random access memory device. The magnetic memory includes a memory cell with a multilayer structure having a plurality of data layers which can each store one bit. The structure includes a plurality of magnetically changeable ferromagnetic layers, a ferromagnetic reference layer having a fixed magnetization state, a first spacer layer separating the magnetically changeable ferromagnetic layers, and a second spacer layer separating the ferromagnetic reference layer from the magnetically changeable ferromagnetic layers. This structure allows for more than one-bit to be stored as well as for efficient writing and reduced power consumption.
摘要翻译：一种多位磁随机存取存储器件以及用于写入和感测多位磁性随机存取存储器件的方法。磁存储器包括具有多个数据层的多层结构的存储单元，每个数据层可以存储一位。该结构包括多个可磁化铁磁层，具有固定磁化状态的铁磁参考层，分离可磁化铁磁层的第一间隔层和将铁磁参考层与磁性可变铁磁层隔开的第二间隔层。这种结构允许存储多于一位，以及有效的写入和降低的功耗。

25. 发明授权

US08523555B2 Apparatus comprising substrate and conductive layer 有权
标题翻译：装置包括基底和导电层
公开(公告)号：US08523555B2
公开(公告)日：2013-09-03
申请号：US13621204
申请日：2012-09-15
申请人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
发明人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
IPC分类号： B29C59/00
CPC分类号： G03F1/14 , B29C59/002 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24917
摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.
摘要翻译：提供了纳米压印母版及其制造方法。该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

26. 发明申请

US20110207240A1 Information storage devices using movement of magnetic domain walls and methods of manufacturing the same 有权
标题翻译：使用磁畴壁运动的信息存储装置及其制造方法
公开(公告)号：US20110207240A1
公开(公告)日：2011-08-25
申请号：US13064894
申请日：2011-04-25
申请人： Chee-kheng Lim , Eun-hyoung Cho , Sung-hoon Choa
发明人： Chee-kheng Lim , Eun-hyoung Cho , Sung-hoon Choa
IPC分类号： H01L21/8239
CPC分类号： G11C11/14 , G11C19/0808 , Y10S977/933 , Y10S977/935
摘要： An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.
摘要翻译：使用磁畴壁移动的信息存储装置包括具有磁畴壁的书写磁性层。在写磁层上形成堆叠结构。堆叠结构包括依次堆叠的连接磁性层和存储磁性层的信息。信息存储装置还包括用于读取存储在信息存储磁性层中的信息的读取器。

27. 发明授权

US07965470B2 Information storage device using movement of magnetic domain wall, and methods of manufacturing and operating the information storage device 失效
标题翻译：使用磁畴壁移动的信息存储装置，以及制造和操作信息存储装置的方法
公开(公告)号：US07965470B2
公开(公告)日：2011-06-21
申请号：US11781311
申请日：2007-07-23
申请人： Chee-kheng Lim , Sung-hoon Choa
发明人： Chee-kheng Lim , Sung-hoon Choa
IPC分类号： G11B5/33
CPC分类号： G11B5/00 , G11B2005/0002 , G11C11/14 , G11C19/0808 , G11C19/0841
摘要： Provided are an information storage device using movement of a magnetic domain wall, and methods of manufacturing and operating the information storage device. The information storage device includes a storage track having magnetic domains and a writer for recording data to the storage track, wherein the writer comprises: a first magnetic layer and a second magnetic layer that is formed to cover a portion of the first magnetic layer and has a smaller magnetic anisotropic energy than the first magnetic layer.
摘要翻译：提供了使用磁畴壁的移动的信息存储装置，以及制造和操作信息存储装置的方法。信息存储装置包括具有磁畴的存储轨道和用于将数据记录到存储轨道的写入器，其中写入器包括：第一磁性层和第二磁性层，形成为覆盖第一磁性层的一部分并具有比第一磁性层更小的磁各向异性能量。

28. 发明授权

US07835167B2 Magnetic domain data storage devices and methods of operating the same 有权
标题翻译：磁畴数据存储设备及其操作方法
公开(公告)号：US07835167B2
公开(公告)日：2010-11-16
申请号：US11980418
申请日：2007-10-31
申请人： Chee-kheng Lim , In-kyeong Yoo , Sung-hoon Choa
发明人： Chee-kheng Lim , In-kyeong Yoo , Sung-hoon Choa
IPC分类号： G11C19/00 , G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/14 , G11C19/0808 , G11C19/0841 , G11C21/00 , Y10T428/11
摘要： Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.
摘要翻译：示例性实施例可以使用磁畴壁的移动和/或操作磁畴数据存储设备的方法来提供数据存储设备。数据存储装置可以包括用于写入具有不同方向磁化的两个磁畴的数据的第一磁性层，用于在第一磁性层的一侧存储数据的第二磁性层，连接到第一磁性层的数据记录装置和第二磁性层和被配置为读取第二磁性层的多个读取头。数据存储设备可以存储更大量的数据，而不需要移动机械系统。

29. 发明授权

US07567453B2 Advanced multi-bit magnetic random access memory device 有权
标题翻译：高级多位磁随机存取存储器件
公开(公告)号：US07567453B2
公开(公告)日：2009-07-28
申请号：US11971246
申请日：2008-01-09
申请人： Chee-kheng Lim
发明人： Chee-kheng Lim
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/5607
摘要： An advanced multi-bit magnetic random access memory device and a method for writing to the advanced multi-bit magnetic random access memory device. The magnetic memory includes one or more pair-cells. A pair-cell is two memory cells. Each memory cell has a magnetic multilayer structure. The structure includes a magnetically changeable ferromagnetic layer, a ferromagnetic reference layer having a non-changeable magnetization state, and a corresponding spacer layer separating the ferromagnetic layers. The memory cells are arranged such that an effective remnant magnetization of each of the cells is non-parallel from the cells' long-axis. This allows for more than one-bit to be stored as well as for efficient writing and reduced power consumption.
摘要翻译：一种先进的多位磁随机存取存储器件和一种写入高级多位磁随机存取存储器件的方法。磁存储器包括一个或多个对单元。一对单元格是两个存储单元。每个存储单元具有磁性多层结构。该结构包括可磁化铁磁层，具有不可变磁化状态的铁磁参考层和分离铁磁层的对应的间隔层。存储单元布置成使得每个单元的有效残余磁化与单元的长轴不平行。这允许存储多于一位，以及有效的写入和降低的功耗。

30. 发明申请

US20080158710A1 Information storage devices using magnetic domain wall movement and methods of manufacturing the same 失效
标题翻译：使用磁畴壁运动的信息存储装置及其制造方法相同
公开(公告)号：US20080158710A1
公开(公告)日：2008-07-03
申请号：US11980553
申请日：2007-10-31
申请人： Chee-kheng Lim
发明人： Chee-kheng Lim
IPC分类号： G11B15/18 , B44C1/22 , C25D5/02 , B29C59/00
CPC分类号： G11C11/14 , G11C19/0808 , Y10S977/933 , Y10S977/935
摘要： In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side surfaces of the connecting magnetic layer. A reader reads information stored in the information storing magnetic layer.
摘要翻译：在信息存储装置中，写入磁性层形成在基板上并具有磁畴壁。在写入磁性层上形成连接磁性层，在连接磁性层的侧面上部形成信息存储磁性层。读取器读取存储在信息存储磁性层中的信息。

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