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    • 21. 发明授权
    • Methods and systems for programmable memory using silicided poly-silicon fuses
    • 使用硅化多晶硅保险丝的可编程存储器的方法和系统
    • US06798684B2
    • 2004-09-28
    • US10355237
    • 2003-01-31
    • Khim L. LowTodd L. BrooksAgnes WooAkira Ito
    • Khim L. LowTodd L. BrooksAgnes WooAkira Ito
    • G11C1700
    • H01L23/5256H01L2924/0002H01L2924/00
    • The present invention is directed to methods and systems for evaluating one-time programmable memory cells. A threshold current is applied to a resistive circuit, thereby generating a threshold voltage. A read current is applied to a first memory cell, thereby generating a memory cell voltage. The memory cell voltage is compared to the threshold voltage, thereby determining the state of the memory cell. In a further embodiment of the invention, a second threshold voltage is generated and compared the memory cell voltage, thereby verifying the state of the memory cell. The threshold current is optionally a substantial replica of said read current. The threshold current is optionally a proportional substantial replica of said read current. In an embodiment, the resistive circuit includes a second memory cell, which can be programmed or unprogrammed. The second memory cell is optionally arranged to average the memory cell resistance.
    • 本发明涉及用于评估一次性可编程存储器单元的方法和系统。 阈值电流被施加到电阻电路,从而产生阈值电压。 读取电流被施加到第一存储器单元,由此产生存储单元电压。 将存储单元电压与阈值电压进行比较,从而确定存储单元的状态。 在本发明的另一实施例中,产生第二阈值电压并比较存储单元电压,由此验证存储单元的状态。 阈值电流可选地是所述读取电流的实质复制品。 阈值电流可选地是所述读取电流的比例实质复制品。 在一个实施例中,电阻电路包括可被编程或未编程的第二存储单元。 可选地,第二存储单元布置成平均存储单元电阻。
    • 23. 发明授权
    • Continuous-time differential amplifier with low offset voltage
    • 具有低失调电压的连续时差分放大器
    • US5220288A
    • 1993-06-15
    • US891018
    • 1992-06-01
    • Todd L. Brooks
    • Todd L. Brooks
    • H03F3/45
    • H03F3/45659H03F2203/45508H03F2203/45658
    • A continuous-time differential amplifier (52, 100) preserves fast settling time while reducing a relatively-high offset voltage-normally associated with a continuous-time differential amplifier using MOS load transistors. The differential amplifier (52, 100) includes a first transistor (81) biased as a current source to provide current into emitters of second (82) and third (83) emitter-coupled input transistors. Fourth (84) and fifth (85) load transistors are respectively coupled between collectors of the second (82) and third (83) input transistors and a power supply voltage terminal. An amplifier (70) having a positive input terminal coupled to the collector of the second input transistor (82) and a negative input terminal receiving a bias voltage biases the control electrodes of the load transistors (84, 85). The amplifier (70) increases the effective transconductance of the load transistors (84, 85) to allow larger control electrode areas, which reduces the effect of transistor mismatch.
    • 连续时间差分放大器(52,100)保持快速建立时间,同时减少通常与使用MOS负载晶体管的连续时间差分放大器相关联的相对高的偏移电压。 差分放大器(52,100)包括被偏置为电流源的第一晶体管(81),以向第二发光二极管(82)和第三发射极耦合输入晶体管(83)的发射极提供电流。 第四(84)和第五(85)负载晶体管分别耦合在第二(82)和第三(83)输入晶体管的集电极和电源电压端子之间。 具有耦合到第二输入晶体管(82)的集电极的正输入端的放大器(70)和接收偏压的负输入端偏置负载晶体管(84,85)的控制电极。 放大器(70)增加负载晶体管(84,85)的有效跨导,以允许更大的控制电极面积,这降低了晶体管失配的影响。
    • 28. 发明授权
    • Multi-stage high-gain high-speed amplifier
    • 多级高增益高速放大器
    • US5847600A
    • 1998-12-08
    • US638287
    • 1996-04-26
    • Todd L. BrooksLawrence Singer
    • Todd L. BrooksLawrence Singer
    • H03F3/00H03F3/45H03F3/72
    • H03F3/4521H03F3/005H03F3/45188H03F3/45242H03F3/72H03F2203/45356H03F2203/45644H03F2203/45651H03F2203/45682
    • A two-stage switched-capacitor residue amplifier having novel circuitry in the first and second stages provides fast and accurate settling while configured with a large closed-loop gain, and also provides low power consumption while powered from a five volt supply. The invention is particularly well suited for use in a multi-stage, pipe-lined analog-to-digital converter (ADC) that converts multiple bits in the first pipeline stage. Complementary PMOS and NMOS differential pairs are used in the first and/or second stage to increase the current slew capability of the amplifier. Current mirror gain and/or positive feedback is used in the second stage to increase transonductance and bandwidth. Cascode transistors are used in the output of the first and/or second stages and active cascode gain enhancement is used in the first stage to increase dc gain and accuracy. The common mode level at the output of the second stage is controlled by injecting a pair of control currents (representative of the difference between a common-mode level actually at the output of the second stage and a desired common mode level) into a pair of mirror input nodes in the second stage. The common mode level of the first stage is controlled from a common node of a differential pair of the second stage. The two-stage amplifier of the invention provides a gain bandwidth product of 800 MHz, a closed-loop bandwidth of 50 MHz, a dc gain 90 dB, and a power consumption 80 mW.
    • 在第一和第二阶段具有新颖电路的两级开关电容器残余放大器提供快速和准确的稳定,同时配置有大的闭环增益,并且在由五伏电源供电时也提供低功耗。 本发明特别适用于在第一流水线级中转换多个比特的多级管线模数转换器(ADC)。 互补PMOS和NMOS差分对用于第一和/或第二级以增加放大器的电流转换能力。 在第二阶段使用电流镜增益和/或正反馈来增加电导率和带宽。 串级晶体管用于第一级和/或第二级的输出,并且在第一级中使用有源共源共轭增益增强以增加直流增益和精度。 第二级输出端的共模电平通过将一对控制电流(代表第二级输出端的共模电平与期望的共模电平之间的差)代入一对 第二阶段的镜像输入节点。 第一级的共模级由第二级的差分对的公共节点控制。 本发明的两级放大器提供800MHz的增益带宽乘积,50MHz的闭环带宽,直流增益90dB,功耗80mW。