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21. 发明专利

JPH04190521A BREAKER FOR WIRING 失效
公开(公告)号：JPH04190521A
公开(公告)日：1992-07-08
申请号：JP31782790
申请日：1990-11-26
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KASHIMA TAKAHIRO , MORIYA SHIGEO , MATSUDA HIROSHI
IPC分类号： H01H5/06 , H01H71/10
摘要： PURPOSE:To make high speed separation of contact points possible at the time of breaking by arranging so that the torque in the direction of giving contact force with the defection in the pole opening direction is made to have a characteristic in which the torque, when resisting the contact force imparting means, once increases and then decreases. CONSTITUTION:In order to produce a constant pressure between contact points 5 and 10, contact force imparting means 40 is provided for giving a contact force on a repulsive contact point 34. The contact force imparting means 40 is arranged to have the characteristic in which, once it springs back, the torque in the direction of giving the contact force with the deflection in the point opening direction once increases and then decreases. Because the contact force imparting means 40 uses a spring to give a constant pressure between the contact points 5 and 10, the decreasing rate of the length of the line of action between the rotation center of the repulsive contact point base 34 and the spring 40 is greater in comparison to the increasing rate of the force of the spring force due to the rotation of the repulsing point 10, reaction torque decreases and the repulsive contact point base 34 can rotate at a high speed. this increases the separation speed of the repulsing point at the time of breaking and provides a breaker for wiring excellent in breaking characteristic.

22. 发明专利

JPH04170075A SEMICONDUCTOR PHOTOSENSITIVE DEVICE 失效
公开(公告)号：JPH04170075A
公开(公告)日：1992-06-17
申请号：JP29535090
申请日：1990-11-02
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： ITO KAZUHIRO , MATSUDA HIROSHI , NAGANO YUJI
IPC分类号： H01L27/14 , H01L31/10
摘要： PURPOSE:To prevent reflection of an incident light within a semiconductor piece to form a photosensitive device without noise by depositing, direct or indirect, a film including an element of a particular oxide and a particular sulfide to a part of the surface of a semiconductor. CONSTITUTION:A colored material film of a metal oxide or metal sulfide is deposited to at left portions 5, 5', 9, 9', 10, 11 of the surface other than the photosensitive windows 8, 8' forming the extenal surface of a photosensitive element. As the colored materials, oxides such as Cu, Mn, Cr, V, Fe, Pb, Ag, etc., and sulfides of Cu, Fe, Sn, Sb, Ag, etc., are used and these substances are deposited directly or indirectly to the semiconductor surface. When the colored material is deposited to the external surfaces 5, 5', 9, 9', 10, 11 of the photosensitive element, the element of the incident light which is not photo- electrically converted is absorbed by this element. Thereby, reflection of light in the photosensitive device can be eliminated, stray light can be reduced and a photosensitive device providing low noise level can be obtained.

23. 发明专利

JPH03289182A SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPH03289182A
公开(公告)日：1991-12-19
申请号：JP9035890
申请日：1990-04-06
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： ITO KAZUHIRO , MATSUDA HIROSHI , NAGANO YUJI
IPC分类号： H01L31/107
摘要： PURPOSE:To reduce a dark current and to improve a responding speed by setting concentration of n-type impurity at least from part near an electric field alleviating layer of a photodetecting layer to the alleviating layer to a predetermined value or larger. CONSTITUTION:An InP buffer layer 2, an In0.5Ga0.5As photodetecting layer 3, an InGaAs intermediate layer 4, an InP electric field alleviating layer 5 and an InP window layer 6 are sequentially grown on an InP substrate 1 by a vapor growing method. Then, Be is implanted in a ring state from the surface of the layer 6 to form a p-type region 7. Thereafter, Zn is implanted concentrically in a circular shape with the region 7 to form a p-type region 8. Then, the surface of the region 7 on the layer 6 is covered from the midway to the outside with a protective film 9, a ring-like electrode 10 is formed on the side of the outer periphery of the region 8 and an electrode 11 is formed on the InP 1. Here, if the n-type impurity concentration of the layer 5 is 4X10 cm or more, the n-type impurity concentration of the layer 3 or 4 is set to 1X10 cm or more to reduce a dark current and to obtain excellent characteristics.

24. 发明专利

JPH0290575A SEMICONDUCTOR PHOTODETECTING ELEMENT 失效
公开(公告)号：JPH0290575A
公开(公告)日：1990-03-30
申请号：JP24099388
申请日：1988-09-28
申请人： HITACHI LTD
发明人： FUJIWARA ICHIRO , MATSUDA HIROSHI , ITO KAZUHIRO , NAGATSUMA KAZUYUKI , KURODA TAKARO
IPC分类号： H01L31/107
摘要： PURPOSE:To improve degree of ionization by a method wherein a distortion stress or especially a compression stress is applied onto a semiconductor layer in which hot carriers travel. CONSTITUTION:When a compression stress is applied, a valence electron band is varied in band structure and the energies of a heavy hole band and a light hole band are reversed, and a base condition becomes a light hole band. Therefore, as a compression stress is applied onto an InGaAs well layer 14 inside an InGaAs/InP distorted super lattice, the well layer 14 is turned into a band structure. When holes of hot carriers occurred primary in the InGaAs layer 3 are injected into a carrier multiplying layer 6, a multiplying region inside the distorted super lattice grows to be an InGaAs well layer 14 as InP and InGaAs are different from each other in forbidden band width. The holes injected into the InGaAs layer 14 transmit a light hole band. In the case of InGaAs, the effective mass of a light hole band is one fourth or less as small as that of a heavy hole band, so that it can be easily accelerated by an electric field. Therefore, both the saturation rate and the degree of collision ionization of holes are improved.

25. 发明专利

JPH0215680A SEMICONDUCTOR PHOTODETECTING DEVICE 失效
公开(公告)号：JPH0215680A
公开(公告)日：1990-01-19
申请号：JP16500688
申请日：1988-07-04
申请人： HITACHI LTD
发明人： MATSUDA HIROSHI , ITO KAZUHIRO , FUKUZAWA TADASHI , FUJIWARA ICHIRO , NAGATSUMA KAZUYUKI , MIYAZAKI TAKAO
IPC分类号： H01L31/10
摘要： PURPOSE:To decrease a mesa-type photodetecting element in a dark current and to improve it in reliability by a method wherein the side face of a mesa is made semi-insulated by the introduction of an inert impurity. CONSTITUTION:The following are successively grown on an n-type InP substrate 31 through an MOCVD method: an n-type InP buffer layer 32; an n-type InGaAs light absorbing layer 33; an n-type InGaAsP barrier alleviating layer 34; an n-type InP electrical field alleviating layer 35; and an n-type InP layer. After that, the uppermost InP layer is made to serve as an n-type InP multiplying layer 36 and a p-type InP layer 37 though the diffusion of Zn 2mum in depth to form a p-n junction 38. After a protecting film 39 has been formed on a side face of a mesa, oxygen is introduced through an ion implantation for the formation of a semi-insulating region 40. Next, the substrate 31 is annealed at a temperature of 700 deg.C, and then a p-electrode 41 and an n-electrode 42 are built to form an APD.

26. 发明专利

JPH01261874A PHOTODETECTOR 失效
公开(公告)号：JPH01261874A
公开(公告)日：1989-10-18
申请号：JP8902988
申请日：1988-04-13
申请人： HITACHI LTD
发明人： FUJIWARA ICHIRO , MATSUDA HIROSHI , NAGATSUMA KAZUYUKI , ITO KAZUHIRO
IPC分类号： H01L31/107 , H01L31/10
摘要： PURPOSE:To restrain an edge breakdown, obtain uniform multiplication in a light receiving surface, and make it possible to control the width of a multiplication region so as to be optimum, by selectively forming two semiconductor layers of high concentration carrier just under the light receiving surface. CONSTITUTION:On an N-type InP substrate 1, the following are continuously grown; an N -InP layer 2, an N -InGaAs layer 3, an N -InGaAs layer 4 and an N -InP layer 7. By implanting Si from the surface of the region 7, an N-InP layer 5 and an N -InP layer 6 are selectively formed at a 2-2.5mum deep position. After an SiO2/SiN film 10 is stuck, an SiN anti-reflection film 9 is formed on a light receiving surface. Since a layer of high concentration carrier is formed just under the light receiving surface, yield voltage can be made low in the light receiving surface, and high in the edge part of a main junction 12. Thereby, edge yield can be restrained, and uniform avalanche multiplication can be obtained in the light receiving surface. Further, since electric field is sharply decreased in the region 5, the multiplication region can be controlled by the thickness of the region 6, and the multiplication region can be controlled so as to have the optimum thickness.

27. 发明专利

JPS63313875A SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPS63313875A
公开(公告)日：1988-12-21
申请号：JP14895287
申请日：1987-06-17
申请人： HITACHI LTD
发明人： ITO KAZUHIRO , FUJIWARA ICHIRO , NAGATSUMA KAZUYUKI , MATSUDA HIROSHI
IPC分类号： H01L31/107 , H01L31/10
摘要： PURPOSE:To increase a multiplication factor, and to reduce noise by multiplying carriers in at least one part of a region in which a composition changes. CONSTITUTION:Structure in which holes are used as photo-carriers and an ionization rate to holes is increased is adopted, an In-Ga-Al-As-P system is employed as a base material composition, and a proper composition in the two dimensions or five dimensions of the group is accepted. These alternation of strata and compositions may change continuously. Since an optical absorption layer 3, an intermediate layer 4, a multiplication layer 5 and a window layer 6 take an N type and a P-N junction 8 is formed, a P-type region 7 is formed into the window layer 6, and a substrate 1 and a buffer layer 2 may take a P type and have insulating properties, but it is preferable that the substrate 1 and the buffer layer 2 take the N type. Carrier concentration in each layer may be brought to a proper value, but it is desirable that a section having concentration comparatively higher than the periphery of the intermediate layer 4 is formed to the layer 4 or in the layer 4. Accordingly, a multiplication factor is increased, and noise is reduced.

28. 发明专利

JPS63281479A SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPS63281479A
公开(公告)日：1988-11-17
申请号：JP11458987
申请日：1987-05-13
申请人： HITACHI LTD
发明人： NAGATSUMA KAZUYUKI , ITO KAZUHIRO , FUJIWARA ICHIRO , MATSUDA HIROSHI
IPC分类号： H01L31/107 , H01L31/10
摘要： PURPOSE:To reduce the hole storage effect, and improve the response speed and the frequency characteristics, by constituting the carrier concentration distribution of InP/InGaAs hetero junction as n-InP/n -InP/n-InGaAs/n -InGaAs. CONSTITUTION:By applying an MOCVD method, the following are grown in order on an n -InP substrate 6; n -InP layer 5, n -InGaAs layer 2, n-InGaAs layer 4, n -InP layer 3, and n-InP layer 1. The thickness of each layer is, for example, 0.5, 1.3, 0.2, 0.2, and 3.3 mum. The carrier concentration of each layer depends on whether doping of SiH4 is performed or not, and is about 1X10 , 1X10 , 1X10 , 1X10 , and 1X10 cm . A p-InP region 8 serving as a guard ring is formed by Cd thermal diffusion, and a p -InP region 7 is formed by Zn diffusion. The thickness of the p -InP layer is about 1.5 mum, and SiNx is applied to a diffusion mask which is turned into an antireflection film 10. A p-electrode 9 and an n-electrode 11 are constituted by Ti/Au, Au/Ge/Ni. A light receiving diameter is about 50 mum.

29. 发明专利

JPS63276285A PHOTODETECTOR 失效
公开(公告)号：JPS63276285A
公开(公告)日：1988-11-14
申请号：JP11051387
申请日：1987-05-08
申请人： HITACHI LTD
发明人： FUJIWARA ICHIRO , MATSUDA HIROSHI , ITO KAZUHIRO , NAGATSUMA KAZUYUKI
IPC分类号： H01L39/22
摘要： PURPOSE:To accelerate and enhance the band of a photodetector for an optical communication by using a high temperature superconducting material having 77K or higher of critical temperature as an active layer for absorbing a light. CONSTITUTION:A YBaCuO3 superconductor thin film 2 of a high temperature superconducting material having 77K or higher of critical temperature is formed on a YBaCuO3 bulk substrate 1. It is annealed in an oxygen atmosphere to single crystallize the film 2. In order to prevent the surface from reflecting, a reflection preventive film 4 is formed on a photodetecting surface. Eventually, an ohmic electrode 4 is formed. When a light is incident to this photodetector, the light is made to collide against Cooper pair of a cause of exhibiting superconducting characteristic to break the pair, thereby generating quasi- particles. A current increases that much in the generation of the quasi-particles, and an optical signal is converted to an electric signal by the increase in the current. A superconducting material is represented as a composition formula by AxByOz, where the A is Sr, Ra, Sc, Y or La, etc., the B is an oxide made of at least one or transitional metal element such as Cu, which is preferably an inorganic ceramic material having a structure similar to perovskite or K2NiF4 type.

30. 发明专利

JPS63142683A AVALANCHE PHOTODIODE 失效
公开(公告)号：JPS63142683A
公开(公告)日：1988-06-15
申请号：JP28880186
申请日：1986-12-05
申请人： HITACHI LTD
发明人： FUJIWARA ICHIRO , MATSUDA HIROSHI , ITO KAZUHIRO , NAGATSUMA KAZUYUKI , OUCHI HIROBUMI
IPC分类号： H01L31/107 , H01L31/10
摘要： PURPOSE:To form a low-noise, high-speed and high-sensitivity avalanche photodiode (APD) by a method wherein an InP and InGaAs doping superlattice of graded energy-band structure is used as an electric-field limiting layer. CONSTITUTION:A buffer layer 2, a light-absorbing layer 3, an InP and InGaAs superlattice 5, an N InP layer 6 are grown in succession on a substrate 1. Then, after Cd has been diffused at a low temperature and a guard ring 7 has been formed, a main unction 8 is formed by selective thermal diffusion of Zn. A passivating film 9 is a three-layer structure of PSG/SiO2/SiN; an antireflection film 10 is composed of SiN. Lastly, a P-type ohmic electrode 11 and an N-type ohmic electrode 12 are formed. A carrier generated in the light-absorbing layer 7 passes through an electric-field limiting layer, is avalanche-multiplied inside a carrier-multiplying layer and reaches a P-N junction. Because an InP and InGaAs superlattice is used as the carrier-multiplying layer, the ratio of an ionization factor for an electron and a hole becomes big and the S/N ratio is improved.

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