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    • 21. 发明申请
    • ELECTRIC CIRCUIT, AND PULSE POWER SOURCE
    • 电路和脉冲电源
    • US20070210837A1
    • 2007-09-13
    • US11683552
    • 2007-03-08
    • Tatsuya TerazawaTakao Saito
    • Tatsuya TerazawaTakao Saito
    • H03K5/01
    • H03K17/567H03K5/12H03K17/0406H05H1/36
    • A pulse power source comprises a first circuit, a second circuit, a transformer for coupling the first circuit and the second circuit, and a switching controller. The second circuit comprises a third semiconductor switch connected in series with a secondary winding of the transformer. The third semiconductor switch is connected in such a direction that a voltage generated in the second circuit is reverse-biased during a period in which the second semiconductor switch is turned on. A gate amplifier for forming a control signal from the switching controller into a pulse and outputting the pulse as a pulse signal is connected between a gate terminal and a cathode terminal of the third semiconductor switch.
    • 脉冲电源包括第一电路,第二电路,用于耦合第一电路和第二电路的变压器以及开关控制器。 第二电路包括与变压器的次级绕组串联连接的第三半导体开关。 第三半导体开关沿着使第二电路中产生的电压在第二半导体开关导通的时段内被反向偏置的方向连接。 用于将来自开关控制器的控制信号形成脉冲并输出脉冲作为脉冲信号的门放大器连接在第三半导体开关的栅极端子和阴极端子之间。
    • 22. 发明申请
    • Plasmon resonant structure, controlling method thereof, and a metallic domain manufacturing method
    • 等离子体共振结构,其控制方法和金属畴制造方法
    • US20060194344A1
    • 2006-08-31
    • US11339964
    • 2006-01-25
    • Takao Saito
    • Takao Saito
    • C12M1/34G01N1/28G01N33/543
    • G01N33/54373G01N21/554
    • Metallic particle layers with metallic domains being arranged therein each at a predetermined space within a horizontal plane are laminated at an appropriate distance in the vertical direction in a dielectric layer. The distance ΔW between each of the metallic domains may be controlled by controlling the growth of metallic particles for the horizontal direction and the distance ΔL between the metallic particle layers may be controlled by controlling the thickness of the dielectric layer to be laminated for the vertical direction, so that the effect of field enhancement by plasmon resonance is improved by satisfactory control for the plasmon resonance in the direction of the thickness and in the direction orthogonal thereto.
    • 在电介质层中以垂直方向的适当距离层叠金属颗粒层,金属颗粒层各自位于水平面内的预定空间。 可以通过控制金属颗粒在水平方向上的生长来控制每个金属区域之间的距离DeltaW,并且可以通过控制垂直方向上层叠的电介质层的厚度来控制金属颗粒层之间的距离DeltaL ,因此通过在厚度方向和与其正交的方向上等离子体共振的令人满意的控制来提高通过等离子体共振的场增强的效果。
    • 26. 发明授权
    • Process for the preparation of 4-substituted azetidinone derivatives
    • 制备4-取代的氮杂环丁酮衍生物的方法
    • US06340751B1
    • 2002-01-22
    • US09357153
    • 1999-07-19
    • Takao SaitoToshiyuki MurayamaTakaji MatsumotoTakashi Miura
    • Takao SaitoToshiyuki MurayamaTakaji MatsumotoTakashi Miura
    • C07F718
    • C07D413/06C07D205/08Y02P20/55
    • Disclosed is a process for the preparation of a 4-substituted azetidinone derivative, which comprises reacting an azetidinone derivative and an amide compound in the presence of a magnesium compound such as those represented by the following formulas (II): and (IV): represented by the following formula (III): MgR5R6  (III) wherein R5 represents a C1-12 alkyl group, a C2-5 alkenyl group, a 5- to 8-membered alicyclic group which may be substituted by a lower C1-4 alkyl group, a phenyl group which may be substituted by a lower C1-4 alkyl group, a lower C1-4 alkoxy group or a halogen atom or a benzyl group which may be substituted by a lower C1-4 alkyl group, a lower C1-4 alkoxy group or a halogen atom, and R6 represents a halogen atom, a methanesulfonyloxy group, a benzenesulfonyloxy group, a p-toluenesulfonyloxy group, a trifluoromethanesulfonyloxy group, an acetoxy group which may be substituted by a halogen atom or a cyano group or an OR7 group (R7 representing a lower C1-4 alkyl group, a substituted or unsubstituted phenyl group or a substituted or unsubstituted benzyl group). The process provides an industrially excellent process for the preparation of a 4-substituted azetidinone derivative which permits the selective preparation of an intermediate for the synthesis of a carbapenem antibacterial agent having a desired 1-&bgr;′ configuration.
    • 公开了制备4-取代的氮杂环丁酮衍生物的方法,该方法包括在镁化合物如下式(II)和(IV)所示的那些镁化合物存在下使氮杂环丁酮衍生物与酰胺化合物反应:代表 通过下式(III)表示:其中R5表示C1-12烷基,C2-5烯基,可被低级C1-4烷基取代的5至8元脂环基,苯基 可以被低级C 1-4烷基,低级C 1-4烷氧基或卤素原子取代的苯基,或可以被低级C 1-4烷基取代的苄基,低级C 1-4烷氧基或 卤原子,R6表示卤原子,甲磺酰氧基,苯磺酰氧基,对甲苯磺酰氧基,三氟甲磺酰氧基,可被卤素原子或氰基取代的乙酰氧基或OR7基(R7表示 低级C 1-4烷基,取代的o R未取代的苯基或取代或未取代的苄基)。 该方法提供了制备4-取代的氮杂环丁酮衍生物的工业上优异的方法,其允许选择性制备用于合成具有所需1-β'构型的碳青霉烯类抗菌剂的中间体。
    • 27. 发明授权
    • Method for manufacturing (3S,4R)-4-[(R)-1′-formylethyl]azetidin-2-one derivatives
    • 制备(3S,4R)-4 - [(R)-1'-甲酰乙基]氮杂环丁-2-酮衍生物的方法
    • US06169179A
    • 2001-01-02
    • US09329335
    • 1999-06-10
    • Howard AlperTakao SaitoTakashi Miura
    • Howard AlperTakao SaitoTakashi Miura
    • C07D20500
    • C07D205/08Y02P20/55
    • A method for manufacturing (3S,4R)-4-[(R)-1′-formylethyl]azetidin-2-one derivatives represented by formula (3) wherein R1 represents a hydrogen atom or a protective group, through asymmetric hydroformylation of 4-vinylazetidin-2-one represented by formula (1) wherein R1 has the same meaning as described above; in the presence of a rhodium complex and a (2S,4S)-diphosphine compound represented by formula (2) wherein R2 represents a phenyl group which may be substituted with 1-5 substituent(s) selected from a lower alkyl group, a lower alkoxy group, and a halogen atom. By use of both an inexpensive optically active diphosphine compound and a rhodium complex as catalysts, intermediate compounds important for carbapenem antibiotics can be manufactured with high selectivity and efficiency.
    • 制备由式(3)表示的(3S,4R)-4 - [(R)-1'-甲基乙基]氮杂环丁烷-2-酮衍生物的方法,其中R 1表示氢原子或保护基,通过不对称加氢甲酰化4 (1)表示的1-乙烯基氮杂环丁烷-2-酮,其中R1具有与上述相同的含义; 在铑络合物和由式(2)表示的(2S,4S) - 二膦化合物的存在下,其中R 2表示可被1-5个选自以下的取代基取代的苯基:低级烷基,低级 烷氧基和卤素原子。通过使用廉价的光学活性二膦化合物和铑配合物作为催化剂,可以以高选择性和高效率制造对碳青霉烯类抗生素重要的中间体化合物。