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21. 发明授权

US06734030B2 Semiconductor light emitting device and method of fabricating semiconductor light emitting device 失效
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US06734030B2
公开(公告)日：2004-05-11
申请号：US10093339
申请日：2002-03-06
申请人： Masato Doi , Hiroyuki Okuyama , Goshi Biwa , Toyoharu Oohata
发明人： Masato Doi , Hiroyuki Okuyama , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L2100
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/76262 , H01L33/007
摘要： Semiconductor light emitting devices and a method of fabricating the semiconductor light emitting devices are provided. The semiconductor light emitting device includes a growth substrate, a first growth layer formed on the growth substrate, a growth obstruction film formed on the first growth layer, and a second growth layer formed by selective growth from an opening portion formed in the growth obstruction film, wherein device isolation trenches for isolating devices from each other are formed in the first growth layer formed on the growth substrate, and the second growth layer is formed by selective growth after formation of the device isolation trenches.
摘要翻译：提供半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括生长衬底，在生长衬底上形成的第一生长层，形成在第一生长层上的生长阻塞膜，以及通过从形成在生长阻塞膜中的开口部选择性生长而形成的第二生长层其中，在形成在生长衬底上的第一生长层中形成用于隔离器件的器件隔离沟槽，并且在形成器件隔离沟槽之后通过选择性生长形成第二生长层。

22. 发明授权

US08741451B2 Crystal film, crystal substrate, and semiconductor device 有权
标题翻译：晶体膜，晶体基板和半导体器件
公开(公告)号：US08741451B2
公开(公告)日：2014-06-03
申请号：US11976246
申请日：2007-10-23
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： B32B9/00 , B32B19/00
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.
摘要翻译：使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。在从下方延伸的每个穿透位错D1的端部中，晶体层（13）具有空间（13a），（13b）。穿透位错D1通过空间（13a），（13b）与上层分开，使得每个穿透位错D1被阻止传播到上层。当由汉堡矢量表示的穿透位错D1的位移被保留以产生另一个位错时，空间（13a），（13b）改变其位移的方向。结果，空间（13a），（13b）上方的上层以低位错密度变成结晶。

23. 发明申请

US20070125996A1 Crystal firm, crystal substrate, and semiconductor device 失效
标题翻译：水晶公司，晶体基板和半导体器件
公开(公告)号：US20070125996A1
公开(公告)日：2007-06-07
申请号：US11699999
申请日：2007-01-31
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： H01L29/06 , H01L33/00 , H01L31/00 , H01L29/739
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.
摘要翻译：使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。晶体层（13）在从下方延伸的每个穿透位错D 1 1的末端具有间隔（13a），（13b）。穿透位错D 1＆lt; 1＆gt;通过空间（13a），（13b）从上层分离，使得每个穿透位错D 1 1被阻止传播到上层。当由汉堡矢量表示的穿透位错D 1 1的位移被保留以产生另一位错时，空间（13a），（13b）改变其位移的方向。结果，空间（13a），（13b）上方的上层以低位错密度变为结晶。

24. 发明授权

US07221001B2 Semiconductor light-emitting device and process for producing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US07221001B2
公开(公告)日：2007-05-22
申请号：US11066699
申请日：2005-02-24
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
摘要翻译：提供半导体发光器件。半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

25. 发明申请

US20070085087A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND IMAGE DISPLAY DEVICE AND LIGHTING UNIT COMPRISING SAME 有权
标题翻译：半导体发光装置和图像显示装置以及包含其的照明装置
公开(公告)号：US20070085087A1
公开(公告)日：2007-04-19
申请号：US11558176
申请日：2006-11-09
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.
摘要翻译：提供了一种半导体发光器件。半导体发光器件包括：具有沿衬底表面取向的衬底表面的衬底; 在基板上形成包括第一生长层导电型的第一生长层; 形成在第一生长层上的掩模层; 通过通过掩模层中的开口的选择性生长形成并包括沿着晶体表面取向的晶体表面形成的第二生长层导电类型的第二生长层; 包括沿着所述晶体表面的至少一部分形成的第一包层导电类型的第一包层; 活性层以及包括第二包覆层导电型的第二包覆层。第一包覆层，有源层和第二覆层中的至少一个覆盖围绕开口的掩模层。

26. 发明授权

US07129514B2 Image display unit 失效
公开(公告)号：US07129514B2
公开(公告)日：2006-10-31
申请号：US11097732
申请日：2005-03-31
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L29/20 , H01L31/036
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

27. 发明授权

US07122394B2 Process for producing a semiconductor light-emitting device 失效
标题翻译：半导体发光装置的制造方法
公开(公告)号：US07122394B2
公开(公告)日：2006-10-17
申请号：US11093807
申请日：2005-03-30
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L29/20 , H01L31/036
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
摘要翻译：提供半导体发光器件。半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

28. 发明申请

US20060096524A1 Crystal growth method for nitride semiconductor and formation method for semiconductor device 有权
公开(公告)号：US20060096524A1
公开(公告)日：2006-05-11
申请号：US11311017
申请日：2005-12-19
申请人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02554 , H01L21/02557 , H01L21/02565 , H01L21/02568 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265
摘要： Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

29. 发明授权

US06946686B2 Method of fabricating semiconductor device and semiconductor device 有权
公开(公告)号：US06946686B2
公开(公告)日：2005-09-20
申请号：US10786667
申请日：2004-02-25
申请人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： B23K26/00 , B23K101/40 , H01L21/00 , H01L21/20 , H01L21/302 , H01L21/8222 , H01L29/06 , H01L33/00 , H01L33/20 , H01L33/32 , H01L33/40
CPC分类号： H01L33/24 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/007 , H01L33/0079 , H01L33/0095
摘要： A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device. Since the first conductive layer has good crystallinity and is suitable for formation of an electrode thereon, an electrode can be efficiently formed on the back surface of the first conductive type layer of the peeled stacked structure.

30. 发明授权

US06927164B2 Method of fabricating semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US06927164B2
公开(公告)日：2005-08-09
申请号：US10211419
申请日：2002-08-02
申请人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： B23K26/00 , B23K101/40 , H01L21/00 , H01L21/20 , H01L21/302 , H01L21/8222 , H01L29/06 , H01L33/00 , H01L33/20 , H01L33/32 , H01L33/40 , H01L21/44
CPC分类号： H01L33/24 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/007 , H01L33/0079 , H01L33/0095
摘要： A first conductive type layer having a band gap energy smaller than that of an under growth layer formed on a substrate is formed by selective growth from an opening portion formed in the under growth layer, and an active layer and a second conductive type layer are stacked on the first conductive type layer, to form a stacked structure. When such a stacked structure for forming a semiconductor device is irradiated with laser beams having an energy value between the band gap energies of the under growth layer and the first conductive type layer, abrasion occurs at a first conductive type layer side interface between the under growth layer and the first conductive type layer, so that the stacked structure is peeled from the substrate and the under growth layer and simultaneously isolated from another stacked structure for forming another semiconductor device. Since the first conductive layer has good crystallinity and is suitable for formation of an electrode thereon, an electrode can be efficiently formed on the back surface of the first conductive type layer of the peeled stacked structure.
摘要翻译：通过从形成在下部生长层的开口部分选择性地生长，形成具有比形成在基板上的下部生长层的带隙能量小的带隙能量的第一导电型层，并且层叠有源层和第二导电类型层在第一导电类型层上形成堆叠结构。当这种用于形成半导体器件的层叠结构被照射具有在生长下层和第一导电类型层的带隙能之间的能量值的激光束时，在下部生长的第一导电型层侧界面处发生磨损层和第一导电型层，使得层叠结构从基板和下层生长层剥离，并且同时与用于形成另一半导体器件的另一堆叠结构隔离。由于第一导电层具有良好的结晶度并且适于在其上形成电极，因此可以在剥离的堆叠结构的第一导电类型层的背面上有效地形成电极。

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