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    • 21. 发明申请
    • VACUUM HEATING AND COOLING APPARATUS
    • 真空加热和冷却装置
    • US20110253037A1
    • 2011-10-20
    • US13093906
    • 2011-04-26
    • Koji TsunekawaYoshinori NagamineNaoyuki SuzukiTakuji OkadaShinichi Inaba
    • Koji TsunekawaYoshinori NagamineNaoyuki SuzukiTakuji OkadaShinichi Inaba
    • F27D11/12H01L21/00B05C11/00C23C14/56B05C9/14
    • H01L21/67109C23C14/541G11C11/16H01L21/67115H01L21/67748H01L21/68742
    • The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased. In an embodiment, the heating and cooling apparatus for heating and cooling a substrate in a vacuum, includes: a vacuum chamber; a radiation energy source positioned at the vacuum chamber on an atmosphere side for emitting a heating light; an incidence part for causing the heating light from the radiation energy source to enter the vacuum chamber; a substrate-holding member for holding the substrate; and a substrate-transfer mechanism for transferring the substrate held by the substrate-holding member in a heating state to a heating position proximal to the radiation energy source, and transferring the substrate and the substrate-holding member in a non-heating state to a non-heating position distant from the radiation energy source, wherein the substrate-holding member has a plate shape for placing the substrate thereon and has an outer shape larger than that of the incidence part for causing the heating light to enter the vacuum chamber.
    • 真空加热和冷却装置可以在保持高真空度的情况下在成膜处理之后快速地加热和冷却基板。 由于积聚而导致室内部件的温度升高受到抑制,基板间的温度变化也降低。 在一个实施例中,用于在真空中加热和冷却基板的加热和冷却装置包括:真空室; 辐射能源,其位于气氛侧的真空室处,用于发射加热光; 用于使来自辐射能源的加热光进入真空室的入射部分; 用于保持所述基板的基板保持部件; 以及基板转印机构,用于将由基板保持部件保持的基板以加热状态转印到靠近所述辐射能量源的加热位置,并将所述基板和所述基板保持部件以非加热状态转印到 远离辐射能源的非加热位置,其中基板保持构件具有用于将基板放置在其上的板形状,并且具有比用于使加热光进入真空室的入射部分大的外形。
    • 25. 发明授权
    • Process for producing a tetraalkoxysilane
    • 四烷氧基硅烷的制造方法
    • US4752647A
    • 1988-06-21
    • US932315
    • 1986-11-19
    • Shinichi InabaShuichi HondaKohji Koga
    • Shinichi InabaShuichi HondaKohji Koga
    • B01J31/00B01J31/02C07B61/00C07F7/04
    • C07F7/045
    • A process for producing a tetraalkoxysilane by subjecting silicon and a lower alkyl alcohol to catalytic reaction in the presence of an alkali metal alkoxide catalyst is provided, which process comprises carrying out the catalytic reaction at 50.degree.-400.degree. C., adding a specified ether compound, and which process affords such advantages that the alkali metal alkoxide catalyst well dissolves in the reaction mixture to make it possible to easily carry out the reaction; whether Si-containing particles as raw material for Si are fine or coarse, the reaction can be carried at an increased reaction rate; and the yield of the tetraalkoxysilane per hour per unit weights of raw materials is high.
    • 提供了一种通过在碱金属醇盐催化剂存在下使硅和低级烷基醇进行催化反应制备四烷氧基硅烷的方法,该方法包括在50-400℃进行催化反应,加入特定的醚 化合物,并且哪个方法具有这样的优点,即碱金属醇盐催化剂很好地溶解在反应混合物中,使得可以容易地进行反应; 作为Si的原料的含Si粒子是微细还是粗粒,可以以提高的反应速度进行反应; 每单位重量原料每小时四烷氧基硅烷的产率高。