专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US5026664A Method of providing a semiconductor IC device with an additional conduction path 失效
标题翻译：提供具有附加传导路径的半导体IC器件的方法
公开(公告)号：US5026664A
公开(公告)日：1991-06-25
申请号：US334145
申请日：1989-04-06
申请人： Mikio Hongo , Katsuro Mizukoshi , Shuzo Sano , Takashi Kamimura , Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi
发明人： Mikio Hongo , Katsuro Mizukoshi , Shuzo Sano , Takashi Kamimura , Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76838 , H01L21/32051 , H01L21/76892 , Y10S148/093
摘要： A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film. The provision of the additional conduction path and/or the removal of part of the patterned conductor layer is preformed in a chemical vapor deposition apparatus which includes a vacuum chamber and an ion beam radiation unit having a housing partitioned into, for example, first, second and third compartments. The ion beam radiation unit has an ion source placed in the first compartment, an ion beam focusing and deflecting device placed in the second compartment and pressure buffer constituted by the third compartment. The third compartment is coupled to and pneumatically isolated from the vacuum chamber for conducting an ion beam emitted from the ion source, passing the second compartment and ejected from the second compartment to the vacuum chamber.
摘要翻译：具有衬底，用于衬底中的区域的互连的图案化导体层和覆盖该器件的钝化层的半导体IC器件被设置有去除图案和/或图案化导体层的一部分的附加传导路径用于断开评估设备特点的目的。附加传导路径是通过在钝化层中形成一个孔而露出导体层的一部分而形成的，该导体层的一部分在包含金属化合物气体的气氛中引导离子束到孔上并延伸到钝化层的预定部分上其形成图案的附加传导路径，从而形成从金属化合物气体分解的金属的图案化膜，并在图案化膜上形成附加导体。提供额外的传导路径和/或去除图案化的导体层的一部分在化学气相沉积设备中预先形成，该化学气相沉积设备包括真空室和离子束辐射单元，该单元具有被分隔成例如第一，第二和第三个隔间。离子束辐射单元具有放置在第一隔室中的离子源，放置在第二隔室中的离子束聚焦和偏转装置以及由第三隔间构成的压力缓冲器。第三隔室与真空室联接并气动隔离，用于传导从离子源发射的离子束，通过第二隔室并从第二隔室喷射到真空室。

22. 发明授权

US5447614A Method of processing a sample using a charged beam and reactive gases and system employing the same 失效
标题翻译：使用带电束和反应性气体处理样品的方法及采用该方法的系统
公开(公告)号：US5447614A
公开(公告)日：1995-09-05
申请号：US260907
申请日：1994-06-15
申请人： Yuuichi Hamamura , Satoshi Haraichi , Akira Shimase , Junzou Azuma , Fumikazu Itoh , Toshio Yamada , Yasuhiro Koizumi , Michinobu Mizumura
发明人： Yuuichi Hamamura , Satoshi Haraichi , Akira Shimase , Junzou Azuma , Fumikazu Itoh , Toshio Yamada , Yasuhiro Koizumi , Michinobu Mizumura
IPC分类号： H01J37/244 , H01J37/317 , C23C14/46 , B23K15/00
CPC分类号： H01J37/317 , H01J37/244 , H01J37/3056 , H01J2237/006 , H01J2237/2443 , H01J2237/24435 , H01J2237/304 , H01J2237/31744
摘要： A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.
摘要翻译：使用带电束和反应性气体处理样品的方法以及使用其的系统的方法和方法，所述方法和系统能够执行反应性蚀刻和使用带电粒子检测器进行的束辅助沉积，其不会由于反应气体。该系统设计成使得以带电粒子检测器的形式提供快门机构，并且可以抽出用于容纳带电粒子检测器的室。在样品的观察中，带电粒子检测器被打开以打开快门机构，并且在样品的处理中，带电粒子检测器被关闭或离开以关闭快门机构以将内部带电粒子检测器。

23. 发明授权

US5229607A Combination apparatus having a scanning electron microscope therein 失效
标题翻译：其中具有扫描电子显微镜的组合装置
公开(公告)号：US5229607A
公开(公告)日：1993-07-20
申请号：US714018
申请日：1991-06-12
申请人： Hironobu Matsui , Mikio Ichihashi , Sumio Hosaka , Yoshinori Nakayama , Satoshi Haraichi , Fumikazu Itoh , Akira Shimase , Yoshimasa Kondo , Shigeyuki Hosoki , Masakazu Ichikawa , Yukio Honda , Tsuyoshi Hasegawa , Shiji Okazaki , Shunji Maeda , Hitoshi Kubota
发明人： Hironobu Matsui , Mikio Ichihashi , Sumio Hosaka , Yoshinori Nakayama , Satoshi Haraichi , Fumikazu Itoh , Akira Shimase , Yoshimasa Kondo , Shigeyuki Hosoki , Masakazu Ichikawa , Yukio Honda , Tsuyoshi Hasegawa , Shiji Okazaki , Shunji Maeda , Hitoshi Kubota
IPC分类号： G01Q10/04 , G01Q30/02 , G01Q30/12 , G01Q30/18 , G01Q60/00 , H01J37/252 , H01J37/28
CPC分类号： H01J37/28 , B82Y35/00 , G01Q30/02 , H01J37/252 , H01J37/3056
摘要： A combination apparatus having a scanning electron microscope includes equipment for performing any of observing, measuring and processing operations on a sample placed in a sample chamber. The sample chamber contains a focused electron beam irradiating unit apart from the components for performing the observing, measuring and processing operations. The focused electron beam irradiating unit irradiates a finely focused electron beam onto the surface of the sample for electron microscopic observation in scanning fashion. This setup allows the observing, measuring or processing equipment to combine with the scanning electron microscope without appreciably enlarging the construction of the combination apparatus.
摘要翻译：具有扫描电子显微镜的组合装置包括用于对放置在样品室中的样品进行观察，测量和处理操作的任何设备。样品室包含聚焦电子束照射单元，与用于进行观察，测量和处理操作的部件分开。聚焦电子束照射单元以扫描方式将精细聚焦的电子束照射到用于电子显微镜观察的样品表面上。该设置允许观察，测量或处理设备与扫描电子显微镜组合，而不会明显地扩大组合装置的结构。

24. 发明授权

US5055696A Multilayered device micro etching method and system 失效
标题翻译：多层器件微蚀刻法和系统
公开(公告)号：US5055696A
公开(公告)日：1991-10-08
申请号：US391304
申请日：1989-08-08
申请人： Satoshi Haraichi , Fumikazu Itoh , Akira Shimase , Takahiko Takahashi
发明人： Satoshi Haraichi , Fumikazu Itoh , Akira Shimase , Takahiko Takahashi
IPC分类号： H01L21/302 , H01J37/304 , H01J37/305 , H01L21/3065
CPC分类号： H01J37/304 , H01J37/228 , H01J37/3005 , H01J37/3056 , H01J2237/006 , H01J2237/0805 , H01J2237/0807 , H01L21/76892
摘要： In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer of a multilayered device comprising a plurality of layers formed on a substrate can be accurately and quickly eteched by detecting the change of the material of the layer currently being etched and after detecting the change of material, switching reactant gas to be ionized or atmospheric reactant gas to one complying with the material of the layer currently being etched. This multilayered device micro etching method can be readily put into practice by a multilayered device micro etching system further comprising means for detecting the change of the material of layer to be etched and means for switching and supplying a plurality of reactant gases, in a micro etching appratus for performing locally rective etching.
摘要翻译：在局部反应蚀刻中，通过照射到通过提取离子化的反应物气体产生的多层工件反应性束，或者通过在反应气体的气氛中将这样的聚焦束作为离子束，电子束或激光束照射到多层工件; 通过检测当前被蚀刻的层的材料的变化，并且在检测到材料的变化，切换待离子化或大气的反应气体之后，可以精确而快速地将包含形成在基板上的多层的多层器件的每个层反应气体与符合当前蚀刻层的材料一致。这种多层器件微蚀刻方法可以通过多层器件微蚀刻系统容易地实施，该多层器件微蚀刻系统还包括用于在微蚀刻中检测被蚀刻层的材料的变化和用于切换和供应多个反应气体的装置的装置用于进行局部矫正蚀刻。

25. 发明授权

US5656811A Method for making specimen and apparatus thereof 失效
标题翻译：制作标本及其装置的方法
公开(公告)号：US5656811A
公开(公告)日：1997-08-12
申请号：US490423
申请日：1995-06-14
申请人： Fumikazu Itoh , Toshihiko Nakata , Tohru Ishitani , Akira Shimase , Hiroshi Yamaguchi , Takashi Kamimura
发明人： Fumikazu Itoh , Toshihiko Nakata , Tohru Ishitani , Akira Shimase , Hiroshi Yamaguchi , Takashi Kamimura
IPC分类号： G01B11/06 , B23K15/00 , C23F4/00 , G01N1/28 , G01N1/32 , G01Q60/00 , H01J37/26 , H01J37/28 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/66 , H01J37/30
CPC分类号： H01J37/3056 , G01N1/32 , H01J37/226 , H01J37/3005 , H01J37/304 , H01J2237/30466 , H01J2237/3114 , H01J2237/31745
摘要： A method for making a specimen for use in observation through a transparent electron microscope, includes a step of milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step of observing a mark for detection of a position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the milling, and a step of compensating for positional drift of the focused ion beam during milling in accordance with a result of the observation. The method is carried out by an apparatus which includes irradiation area control means for controlling an irradiation area of the focused ion beam onto the specimen so that a surface of the specimen to be milled into the thin film part is not included in the secondary charged particle image when the secondary charged particle image of the surface, on which the mark for detecting the milling position of the specimen is formed, is displayed by the secondary charged particle image during milling part of the specimen, and compensation means for compensating the positional drift of the focused ion beam during milling in accordance with the mark for detecting the milling position.
摘要翻译：通过透明电子显微镜制造用于观察的试样的方法包括通过扫描和照射聚焦离子束将样品的一部分研磨成薄膜部分的步骤，其可以通过透明电子显微镜观察样品，通过扫描并将带电粒子束照射到样本上而不将所述被加入的颗粒束照射到待研磨的部分上来观察用于检测设置在样品上的位置的标记作为二次带电粒子图像的步骤，在研磨期间的薄膜部分，以及根据观察结果补偿在研磨期间聚焦离子束的位置漂移的步骤。该方法由包括照射区域控制装置的装置进行，该照射区域控制装置用于将聚焦离子束的照射区域控制在样本上，使得待研磨到薄膜部分中的样品的表面不包括在二次带电粒子中当在样品的研磨部分期间，通过二次带电粒子图像显示用于检测样品的研磨位置的标记的表面的二次带电粒子图像的图像，以及用于补偿样品的位置漂移的补偿装置根据用于检测铣削位置的标记在铣削期间聚焦的离子束。

26. 发明授权

US07805691B2 Semiconductor failure analysis apparatus, failure analysis method, and failure analysis program 有权
标题翻译：半导体故障分析装置，故障分析方法和故障分析程序
公开(公告)号：US07805691B2
公开(公告)日：2010-09-28
申请号：US11586719
申请日：2006-10-26
申请人： Toshiyuki Majima , Akira Shimase , Hirotoshi Terada , Kazuhiro Hotta
发明人： Toshiyuki Majima , Akira Shimase , Hirotoshi Terada , Kazuhiro Hotta
IPC分类号： G06F17/50
CPC分类号： G01R31/311 , G01N21/95607 , G01R31/2894
摘要： A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure. The failure analyzer 13 extracts candidate nets passing at least one of analysis regions set from the failure observed image, out of a plurality of nets in the semiconductor device, and passage counts of the respective candidate nets through the analysis regions, selects a candidate net with the largest passage count as a first failure net, and selects a second failure net with attention to analysis regions where the first failure net does not pass. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.
摘要翻译：故障分析装置10由用于获取半导体装置的故障观察图像P2的检查信息获取部11，用于获取布局信息的布局信息获取部12以及用于分析故障的故障分析部13构成。故障分析部13从通过半导体装置的多个网络中的故障观察图像，从故障观察图像设定的分析区域中的至少一个以及通过分析区域的各个候选网络的通过计数来提取候补网络，选择候补网络作为第一故障网络的最大通行数，并且选择第二故障网络，注意第一故障网络不通过的分析区域。这实现了半导体故障分析装置，故障分析方法和故障分析程序，其能够安全有效地执行使用故障观察图像的半导体器件的故障的分析。

27. 发明申请

US20070294053A1 Semiconductor failure analysis apparatus, failure analysis method, and failure analysis program 有权
标题翻译：半导体故障分析装置，故障分析方法和故障分析程序
公开(公告)号：US20070294053A1
公开(公告)日：2007-12-20
申请号：US11586719
申请日：2006-10-26
申请人： Toshiyuki Majima , Akira Shimase , Hirotoshi Terada , Kazuhiro Hotta
发明人： Toshiyuki Majima , Akira Shimase , Hirotoshi Terada , Kazuhiro Hotta
IPC分类号： G01R31/00
CPC分类号： G01R31/311 , G01N21/95607 , G01R31/2894
摘要： A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure. The failure analyzer 13 extracts candidate nets passing at least one of analysis regions set from the failure observed image, out of a plurality of nets in the semiconductor device, and passage counts of the respective candidate nets through the analysis regions, selects a candidate net with the largest passage count as a first failure net, and selects a second failure net with attention to analysis regions where the first failure net does not pass. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.
摘要翻译：失效分析装置10由用于获取半导体器件的故障观察图像P 2的检查信息获取器11，用于获取布局信息的布局信息获取器12以及用于分析故障的故障分析器13组成。故障分析部13从通过半导体装置的多个网络中的故障观察图像，从故障观察图像设定的分析区域中的至少一个以及通过分析区域的各个候选网络的通过计数来提取候补网络，选择候补网络作为第一故障网络的最大通行数，并且选择第二故障网络，注意第一故障网络不通过的分析区域。这实现了半导体故障分析装置，故障分析方法和故障分析程序，其能够安全有效地执行使用故障观察图像的半导体器件的故障的分析。

28. 发明申请

US20070290696A1 Semiconductor failure analysis apparatus, failure analysis method, and failure analysis program 审中-公开
标题翻译：半导体故障分析装置，故障分析方法和故障分析程序
公开(公告)号：US20070290696A1
公开(公告)日：2007-12-20
申请号：US11586720
申请日：2006-10-26
申请人： Toshiyuki Majima , Akira Shimase , Hirotoshi Terada , Kazuhiro Hotta
发明人： Toshiyuki Majima , Akira Shimase , Hirotoshi Terada , Kazuhiro Hotta
IPC分类号： G01R31/302
CPC分类号： G01R31/303
摘要： A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure of the semiconductor device. The failure analyzer 13 has an analysis region setter for comparing an intensity distribution in the failure observed image with a predetermined intensity threshold to extract a reaction region arising from a failure, and for setting an analysis region used in the failure analysis of the semiconductor device, in correspondence to the reaction region. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.
摘要翻译：故障分析装置10由用于获取半导体器件的故障观察图像P 2的检查信息获取器11，用于获取布局信息的布局信息获取器12以及用于分析半导体器件的故障的故障分析器13构成。故障分析器13具有分析区域设定器，用于将故障观察图像中的强度分布与预定强度阈值进行比较，以提取由故障引起的反应区域，并且用于设定在半导体器件的故障分析中使用的分析区域，对应于反应区域。这实现了半导体故障分析装置，故障分析方法和故障分析程序，其能够安全有效地执行使用故障观察图像的半导体器件的故障的分析。

29. 发明授权

US06507029B1 Sample processing apparatus and method for removing charge on sample through light irradiation 有权
标题翻译：用于通过光照射去除样品上的电荷的样品处理装置和方法
公开(公告)号：US06507029B1
公开(公告)日：2003-01-14
申请号：US09255700
申请日：1999-02-23
申请人： Norimasa Nishimura , Akira Shimase , Junzou Azuma , Asahiro Kuni , Hiroya Koshishiba
发明人： Norimasa Nishimura , Akira Shimase , Junzou Azuma , Asahiro Kuni , Hiroya Koshishiba
IPC分类号： H01J3730
CPC分类号： B82Y15/00 , H01J37/026 , H01J2237/0047 , H01J2237/28
摘要： In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.
摘要翻译：在用于观察，检查，处理或分析作为基板或样品的半导体晶片的电子粒子机中，将光源安装在准备室中。使用静电用卡盘夹住半导体晶片的夹持台设置有用于连接到地面的部件，使得它们与夹持的半导体晶片接触。在观察，检查，处理或分析之后释放使用静电的卡盘后，用来自光源的光照射半导体晶片的表面和用于连接到地球的部分。这为半导体晶片的表面提供导电性，从而通过用于连接到地球的部件从表面去除积聚在半导体晶片上的电荷。

30. 发明授权

US06344115B1 Pattern forming method using charged particle beam process and charged particle beam processing system 有权
标题翻译：使用带电粒子束工艺和带电粒子束处理系统的图案形成方法
公开(公告)号：US06344115B1
公开(公告)日：2002-02-05
申请号：US09417996
申请日：1999-10-13
申请人： Junzou Azuma , Akira Shimase , Yuichi Hamamura , Hidemi Koike
发明人： Junzou Azuma , Akira Shimase , Yuichi Hamamura , Hidemi Koike
IPC分类号： C23C1400
CPC分类号： H01J37/18 , C23C16/26 , H01J2237/317
摘要： A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.
摘要翻译：使用改进的带电粒子束工艺的图案形成方法和带电粒子束处理系统，当工件被排出到大气中之后，通过被吸收并附着在工件表面上的反应气体有效地防止工件的腐蚀图案形成。带电粒子束处理系统作为主要部件包括设置有离子束光学系统的离子束室，设置有气体喷嘴的处理室，反应气体通过该喷嘴吹向工件，负载锁定室通过一个闸阀到处理室。负载锁定室能够产生用于通过溅射处理工件的表面的惰性气体的等离子体。在通过反应性处理在处理室中形成图案之后，工件返回到装载锁定室，包括在反应气体的环境中用带电粒子束照射工件的表面，并且对工件进行等离子体处理，以在图案形成期间去除被工件吸附的反应气体并附着到工件上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式