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21. 发明申请

US20090061637A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20090061637A1
公开(公告)日：2009-03-05
申请号：US12197547
申请日：2008-08-25
申请人： Hiroshi IWATA
发明人： Hiroshi IWATA
IPC分类号： H01L21/311
CPC分类号： H01L21/3083 , H01L21/76229
摘要： A manufacturing method for a semiconductor device includes: forming a first material film, a second material film, each having a function of preventing metal diffusion, and a third material film of which the etching rate for a first etchant is sufficiently lower than that of the first material film and the etching rate for a second etchant is sufficiently lower than that of the second material film, in this order on the outer peripheral surface of the semiconductor substrate; forming a trench structure; forming a buried insulating film and flattening it; removing the second material film through a wet etching process using the second etchant until the first material film formed on the main surface side is exposed; and removing the first material film on the main surface side through a wet etching process using the first etchant until the semiconductor substrate is exposed on the main surface side.
摘要翻译：半导体器件的制造方法包括：形成具有防止金属扩散的功能的第一材料膜，第二材料膜，以及第一蚀刻剂的蚀刻速率充分低于第一蚀刻剂的第三材料膜第一材料膜和第二蚀刻剂的蚀刻速率在第二蚀刻剂的外周表面上依次充分低于第二材料膜的蚀刻速率; 形成沟槽结构; 形成埋层绝缘膜并使之变平; 通过使用第二蚀刻剂的湿蚀刻工艺去除第二材料膜，直到形成在主表面侧上的第一材料膜暴露; 以及通过使用第一蚀刻剂的湿式蚀刻工艺去除主表面侧上的第一材料膜，直到半导体衬底在主表面侧上露出。

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