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    • 21. 发明授权
    • Field emission electron gun capable of minimizing nonuniform influence
of surrounding electric potential condition on electrons emitted from
emitters
    • 场发射电子枪能够最小化周围电位条件对从发射体发射的电子的不均匀影响
    • US5977696A
    • 1999-11-02
    • US848463
    • 1997-05-08
    • Akihiko Okamoto
    • Akihiko Okamoto
    • H01J3/18H01J1/304H01J3/02H01J1/02
    • H01J3/022
    • In a field emission electron gun including emitters (104) on predetermined parts of a substrate (109), an insulator film (105) on a remaining part of the substrate, a first gate electrode (101) on the insulator film so as to surround the emitters with a space left between each emitter and the first gate electrode and to have an outer peripheral surface defining an emission region (E), a gate edge portion (106) of a conductor is formed on the insulator film to surround the outer peripheral surface of the first gate electrode in contact with the outer peripheral surface of the first gate electrode. A second gate electrode (102) is formed on the insulator film to surround the gate edge portion with a distance left between the gate edge portion and the second gate electrode applied with a second voltage less than a first voltage applied to the first gate electrode.
    • 在包括在基板(109)的预定部分上的发射体(104)的场致发射电子枪中,在所述基板的剩余部分上的绝缘膜(105),所述绝缘膜上的第一栅电极(101) 所述发射体在每个发射极和第一栅电极之间留有空间,并且具有限定发射区域(E)的外周表面,导体的栅极边缘部分(106)形成在绝缘膜上以包围外周 所述第一栅电极的表面与所述第一栅电极的外周面接触。 第二栅电极(102)形成在绝缘膜上以围绕栅极边缘部分,栅极边缘部分和第二栅极电极之间留下的距离小于施加到第一栅电极的第一电压的第二电压。
    • 22. 发明授权
    • Optical pickup device with dual-mode drive mechanism
    • 具有双模驱动机构的光学拾取装置
    • US5070494A
    • 1991-12-03
    • US332749
    • 1989-04-03
    • Masami EmotoMasanobu NishimiyaAkihiko Okamoto
    • Masami EmotoMasanobu NishimiyaAkihiko Okamoto
    • G11B7/005G11B7/135G11B11/105G11B13/04
    • G11B7/005G11B11/10545G11B11/10597G11B13/04G11B7/1365
    • An optical pickup device for optically reproducing an information recorded on a recording medium of a magneto-optical disc or a write-only-read-many optical disc, includes a semiconductor laser, an objective lens for converging the laser light emitted by the laser on the recording medium, a photo-detector for detecting a light reflected from the recording medium, a beam splitter for leading the emitted light from the laser to the objective lens and for leading said light reflected by the recording medium to the photodetector, a first phase plate disposed between the beam splitter and the objective lens, a second phase plate disposed between the beam splitter and the photo-detector, and a rotator for rotate the first phase plate in such a manner than the beam splitter forbids to transmit the light reflected by the recording medium into the laser in a case where the recording medium is said write-only-read-many optical disc, and that the beam splitter allows to transmit the light reflected by the recording medium into the laser in a case where the recording medium is the magneto-optical disc.
    • 一种用于光学地再现记录在磁光盘或只读多光盘的记录介质上的信息的光学拾取装置包括半导体激光器,用于将由激光器发射的激光会聚的物镜 记录介质,用于检测从记录介质反射的光的光检测器,用于将从激光发射的光引导到物镜并将由记录介质反射的所述光引导到光电检测器的分束器,第一相 设置在分束器和物镜之间的板,设置在分束器和光检测器之间的第二相位板,以及用于以不同于分束器的方式旋转第一相位板的旋转器,禁止透射由 在记录介质是所述仅写入许多光盘的情况下,记录介质进入激光器,并且分束器允许透射光反射 在记录介质是磁光盘的情况下,由记录介质输入激光器。
    • 23. 发明授权
    • Optical disc cartridge which protects a disc therein from ambient light
    • 用于保护其中的光盘与环境光的光盘盒
    • US06898797B1
    • 2005-05-24
    • US08498385
    • 1995-07-05
    • Akihiko Okamoto
    • Akihiko Okamoto
    • B65D85/57B65D85/00G11B23/03G11B23/40
    • G11B23/40G11B23/0316G11B23/0317
    • An optical disc cartridge for storing an optical disc. The cover of the optical disc cartridge absorbs or filters ambient light which may damage information stored on the disc after prolonged exposure to the ambient light. Preferably, the disc cartridge cover allows some visible light to pass in order to allow a user to read label information on the disc. The color of the cover may be transparent to visible light, allow only specific visible wavelengths of light to pass, or be opaque, as long as the amount of ambient light reaching the disc stored within the disc cartridge is reduced. The disc cover may be made of a single layer or include a base layer with one or more thin films thereon.
    • 一种用于存储光盘的光盘盒。 光盘盒的盖子吸收或过滤环境光,这可能会在长时间暴露于环境光线之后损坏存储在光盘上的信息。 优选地,盘盒盖允许一些可见光通过以允许用户读取盘上的标签信息。 盖的颜色可以对可见光透明,仅允许特定的可见波长的光通过,或者不透明,只要到达存储在盘盒内的光盘的环境光的量减少即可。 盘盖可以由单层制成或者包括其上具有一个或多个薄膜的基层。
    • 24. 发明授权
    • Field emission type cold cathode element, method of fabricating the same, and display device
    • 场发射型冷阴极元件及其制造方法以及显示装置
    • US06404113B1
    • 2002-06-11
    • US09487671
    • 2000-01-20
    • Akihiko Okamoto
    • Akihiko Okamoto
    • H01J130
    • H01J1/3044H01J2201/319H01J2329/00
    • Semiconductor layers are formed on a substrate, and an insulating film is formed on the semiconductor layers. On the insulating film is formed a gate electrode, which has emitter holes formed therein. In the emitter holes are formed emitters, which are provided with emitter electrodes via the semiconductor layers. The emitters are grouped into a plurality of emitter groups each having at least one emitter. The emitters of each of the emitter groups are connected to each of the semiconductor layers. Common electrodes are formed across the semiconductor layers via the insulating film. Thereby, a field emission type cold cathode element is obtained which has nonlinear characteristics of providing a low resistance in normal operation and a high resistance upon discharges.
    • 在衬底上形成半导体层,在半导体层上形成绝缘膜。 在绝缘膜上形成有在其中形成发射孔的栅电极。 在发射极孔中形成发射体,其经由半导体层设置有发射极电极。 发射器被分组成多个发射极组,每个具有至少一个发射极。 每个发射极组的发射极连接到每个半导体层。 通过绝缘膜跨越半导体层形成公共电极。 由此,得到具有在正常工作时提供低电阻和放电时的高电阻的非线性特性的场发射型冷阴极元件。
    • 29. 发明授权
    • Optical disk drive unit
    • 光盘驱动单元
    • US5351228A
    • 1994-09-27
    • US921300
    • 1992-07-28
    • Tetsuo KannoAkihiko Okamoto
    • Tetsuo KannoAkihiko Okamoto
    • G11B17/04
    • G11B17/0434G11B17/0405
    • An optical disk drive unit has an opening portion formed in a body case to insert an optical disk cartridge having an optical disk therein into the body case and take the optical disk cartridge out of the body case; a driving device for receiving and rotating the optical disk; and a rotatable shutter for opening and closing the opening portion. A leg portion extends from a shutter body. A center of rotation of the leg portion is located on a side of the driving device disposed within the body case and away from the opening portion of the body case. No closing operation of the shutter body is influenced by mounting the optical disk cartridge into the body case. At least one face of the shutter may be constructed by an arc face having a shape approximately equal to the shape of an arc around the center of rotation. A projecting portion may be disposed outside the shutter. In this case, a lower portion of the projecting portion comes in contact with the optical disk cartridge after an end portion of the projecting portion comes in contact with the optical disk cartridge.
    • 光盘驱动单元具有形成在主体壳体中的开口部,将具有光盘的光盘盒插入到主体壳体中,并将​​光盘盒从主体外壳中取出; 用于接收和旋转光盘的驱动装置; 以及用于打开和关闭开口部分的可旋转快门。 腿部从快门体延伸。 腿部的旋转中心位于驱动装置的设置在主体壳体内并远离主体壳体的开口部分的一侧。 通过将光盘盒安装到主体外壳中,不会影响快门体的关闭操作。 挡板的至少一个面可以由具有大体上等于围绕旋转中心的圆弧形状的弧形面构成。 突出部分可以设置在快门的外部。 在这种情况下,在突出部分的端部与光盘盒接触之后,突出部分的下部与光盘盒接触。
    • 30. 发明授权
    • Moelcular beam epitaxy for selective epitaxial growth of III - V
compound semiconductor
    • 用于III-V化合物半导体的选择性外延生长的Moelcular光束外延
    • US4948751A
    • 1990-08-14
    • US196009
    • 1988-05-19
    • Akihiko OkamotoKeiichi Ohata
    • Akihiko OkamotoKeiichi Ohata
    • H01L21/203H01L21/20H01L21/205
    • H01L21/02395H01L21/02463H01L21/02488H01L21/02546H01L21/02639H01L21/02661Y10S148/026Y10S148/065Y10S148/097Y10S148/169Y10S438/909
    • A method of selective epitaxial growth includes a step of selectively forming an insulator film on a predetermined region of a semiconductor substrate and a step of evaporating a starting material containing a Group III element in vacuum in the presence of a Group V element to grow epitaxially a III-V compound semiconductor selectively on the semiconductor substrate under the condition where the partial pressure of the Group III element just above the semiconductor substrate is greater than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the semiconductor substrate and is smaller than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the insulator film.When InAs is grown epitaxially and selectively on a GaAs substrate, the GaAs substrate is kept at 500.degree. to 650.degree. C. and when GaAs is grown epitaxially and selectively on the GaAs substrate, the GaAs substrate is kept at 700.degree. to 775.degree. C.
    • 选择性外延生长的方法包括在半导体衬底的预定区域上选择性地形成绝缘膜的步骤和在V族元素存在下在真空中蒸发含有III族元素的起始材料以在外延生长的步骤 III-V族化合物半导体在半导体衬底上方的III族元素的分压大于存在于III-V族化合物半导体中的III-V族化合物半导体中的III族元素的平衡蒸气压的条件下, 并且小于存在于绝缘膜上的III-V族化合物半导体中所含的III族元素的平衡蒸气压。 当在GaAs衬底上外延和选择性地生长InAs时,GaAs衬底保持在500至650℃,并且当GaAs在GaAs衬底上外延和选择性地生长GaAs时,GaAs衬底保持在700℃至775℃ 。