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21. 发明授权

US08964809B2 Semiconductor optical integrated device 有权
标题翻译：半导体光学集成器件
公开(公告)号：US08964809B2
公开(公告)日：2015-02-24
申请号：US13597375
申请日：2012-08-29
申请人： Yoshihiro Yoneda , Masaki Yanagisawa , Kenji Koyama , Hirohiko Kobayashi , Kenji Hiratsuka
发明人： Yoshihiro Yoneda , Masaki Yanagisawa , Kenji Koyama , Hirohiko Kobayashi , Kenji Hiratsuka
IPC分类号： H01S5/00 , H01S5/024 , H01S5/026 , H01S5/06 , H01S5/227 , H01S5/042 , H01S5/0625 , H01S5/343 , H01S5/20
CPC分类号： H01S5/02461 , B82Y20/00 , H01S5/0261 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/209 , H01S5/2275 , H01S5/3434
摘要： A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.
摘要翻译：半导体光学集成器件包括具有沿着波导方向布置的具有第一和第二区域的主表面的衬底; 包括布置在所述主表面的第一区域上的第一包层，有源层和第二包层的增益区域; 以及包括布置在主表面的第二区域上的第三包层，光波导层和第四包层的波长控制区域，并且包括沿着光波导层布置的加热器。基板包括从基板的厚度方向的背面延伸并到达第一区域的通孔。金属构件布置在通孔中。金属部件在厚度方向上从基板的背面延伸并与第一包覆层接触。

22. 发明授权

US06512783B1 Semiconductor laser and method of manufacturing the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US06512783B1
公开(公告)日：2003-01-28
申请号：US09453546
申请日：1999-12-03
申请人： Tsuyoshi Yamamoto , Hajime Shoji , Takayuki Watanabe , Takuya Fujii , Hirohiko Kobayashi
发明人： Tsuyoshi Yamamoto , Hajime Shoji , Takayuki Watanabe , Takuya Fujii , Hirohiko Kobayashi
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2205 , H01S5/227 , H01S5/2275 , H01S5/34306 , H01S5/3434 , H01S2304/04
摘要： There is provided a semiconductor laser which comprises a first cladding layer formed of compound semiconductor having first conductivity type impurity and having a mesa-shaped projection, an active layer formed on the projection like a stripe and having side surfaces which are inclined at an angle of more than 70 degrees but less than 90 degrees relative to an upper surface of the first cladding layer, buried layers formed on both sides of the projection and having second conductivity type impurity, current blocking layers each having one end which contacts a virtual surface obtained by extending upward a side surface of the active layer and having a first facet which extends downward from the one end and is inclined by about 55 degrees relative to the upper surface of the first cladding layer and formed on each buried layer and having the first conductivity type impurity, and second cladding layers formed on the current blocking layers and the active layer and having the second conductivity type impurity.
摘要翻译：提供了一种半导体激光器，其包括由具有第一导电类型杂质并具有台面状突起的化合物半导体形成的第一包层，活性层形成在条状的突出部上，并且具有倾斜角度为相对于第一包层的上表面大于70度但小于90度，形成在突起的两侧并具有第二导电类型杂质的掩埋层，每个具有一端的虚拟表面的电流阻挡层与虚拟表面接触，向上延伸有源层的侧表面，并且具有从一端向下延伸的第一小面，并相对于第一包覆层的上表面倾斜约55度并形成在每个掩埋层上并且具有第一导电类型杂质和形成在电流阻挡层和活性层上并具有第二导管的第二覆层反射型杂质。

23. 发明授权

US4855311A Benzoisothiazole oximes which are plant protection agents for control of fungi and bacteria 失效
标题翻译：苯并噻唑肟是用于控制真菌和细菌的植物保护剂
公开(公告)号：US4855311A
公开(公告)日：1989-08-08
申请号：US183617
申请日：1988-04-19
申请人： Shinobu Iriuchijima , Hirohiko Kobayashi , Takahito Masuda , Shunnosuke Watanabe , Hiroshi Tabata
发明人： Shinobu Iriuchijima , Hirohiko Kobayashi , Takahito Masuda , Shunnosuke Watanabe , Hiroshi Tabata
IPC分类号： A01N43/80 , C07D275/06
CPC分类号： C07D275/06 , A01N43/80
摘要： Derivatives of benzoisothiazole oxime which exhibit marked effect when used in plant protection agents for control of fungi and bacteria. They are of particular utility for the prevention of rice blast. The derivatives of benzothiazole oxime, according to this invention, are represented by the following general formula (I): ##STR1## wherein R.sub.1 is an alkyl group, and R.sub.2 is an alkyl, alkenyl, alkoxyalkyl or alkoxycarbonyl group, where R.sub.1 and R.sub.2 may be coupled together to form an alkylene chain.
摘要翻译：当用于控制真菌和细菌的植物保护剂时，苯并异噻唑肟的衍生物显示出显着的效果。它们特别适用于防止稻瘟病。根据本发明的苯并噻唑肟的衍生物由以下通式（I）表示：其中R1是烷基，R2是烷基，烯基，烷氧基烷基或烷氧基羰基，其中R1 并且R 2可以连接在一起以形成亚烷基链。

24. 发明授权

US4686296A Process for producing oxiracetam 失效
标题翻译：生产奥拉西坦的方法
公开(公告)号：US4686296A
公开(公告)日：1987-08-11
申请号：US889428
申请日：1986-07-22
申请人： Shinobu Iriuchijima , Hirohiko Kobayashi , Kyoji Aoki , Takeshi Oda , Masayuki Shinoyama , Yoshifumi Nosaka
发明人： Shinobu Iriuchijima , Hirohiko Kobayashi , Kyoji Aoki , Takeshi Oda , Masayuki Shinoyama , Yoshifumi Nosaka
IPC分类号： C07D207/26 , C07D207/273 , C07D207/12
CPC分类号： C07D207/273
摘要： A process for producing oxiracetam (4-hydroxy-2-oxo-1-pyrrolidineacetamide) useful as an agent for improving brain metabolism, under mild conditions and in a single process is provided, this process comprises reacting glycinamide with a butyric acid ester expressed by the formula ##STR1## wherein A represents a halogen atom or an epoxy group, B represents hydroxyl group, but when A is an epoxy group, A and B together form an epoxy group, and R represents an alkyl group.
摘要翻译：提供了用于在温和条件下和单一方法中用作改善脑代谢的药物的奥拉西坦（4-羟基-2-氧代-1-吡咯烷乙酰胺）的方法，该方法包括使甘氨酰胺与丁酸酯式中，A表示卤素原子或环氧基，B表示羟基，但当A为环氧基时，A和B一起形成环氧基，R表示烷基。

25. 发明授权

US06850550B2 Complex coupling MQW semiconductor laser 有权
标题翻译：复耦MQW半导体激光器
公开(公告)号：US06850550B2
公开(公告)日：2005-02-01
申请号：US09805182
申请日：2001-03-14
申请人： Hirohiko Kobayashi , Tsutomu Ishikawa , Hajime Shoji
发明人： Hirohiko Kobayashi , Tsutomu Ishikawa , Hajime Shoji
IPC分类号： H01L29/06 , H01S5/12 , H01S5/20 , H01S3/08 , H01S5/00
CPC分类号： H01S5/1228 , H01S5/1231 , H01S5/2086 , H01S5/209
摘要： A method of manufacturing a distributed feedback semiconductor laser, has the steps of: growing on a semiconductor substrate a lamination of alternately stacked lower barrier layer and lower well layer having a band gap narrower than the lower barrier layer, to form a lower quantum well structure; growing an intermediate layer on an uppermost lower well layer, the intermediate layer having a band gap broader than the lower well and a thickness thicker than the lower barrier layer; growing on the intermediate layer a lamination of alternately stacked upper well layer and upper barrier layer having a band gap broader than the upper well layer and a thickness thinner than the intermediate layer, to form an upper quantum well structure; forming a mask on the upper quantum well structure, the mask having periodical pattern; by using the mask as an etching mask, etching the upper quantum well structure in a periodical shape by using the intermediate layer as an etching margin layer; and removing the mask. Complex coupling DFB lasers with a small variation in characteristics can be provided.
摘要翻译：制造分布式反馈半导体激光器的方法具有以下步骤：在半导体衬底上生长具有比下阻挡层窄的带隙的交替堆叠的下阻挡层和下阱层的叠层，以形成较低量子阱结构 ; 在最上面的下阱层上生长中间层，所述中间层具有比下阱更宽的带隙和比下阻挡层厚的厚度; 在中间层上生长具有比上部阱层宽的带隙和比中间层更薄的厚度的交替层叠的上部阱层和上部阻挡层的叠层以形成上部量子阱结构; 在上量子阱结构上形成掩模，掩模具有周期性图案; 通过使用掩模作为蚀刻掩模，通过使用中间层作为蚀刻边缘层来蚀刻周期形状的上量子阱结构; 并取下面罩。可以提供具有小的特性变化的复耦合DFB激光器。

26. 发明授权

US06560266B2 Distributed feedback semiconductor laser 有权
公开(公告)号：US06560266B2
公开(公告)日：2003-05-06
申请号：US09964614
申请日：2001-09-28
申请人： Hajime Shoji , Hirohiko Kobayashi , Tsutomu Ishikawa
发明人： Hajime Shoji , Hirohiko Kobayashi , Tsutomu Ishikawa
IPC分类号： H01S5187
CPC分类号： H01S5/1228 , H01S5/2059
摘要： A DFB laser in which a thickness of an active layer changes periodically and a greater part of current injected from external sides is selectively injected into the thick regions (projected regions) of the active layer. Therefore, the ratio of the gain coupling to the refractive index coupling can be further increased, and a threshold current can be lowered, and stability of single mode oscillation can also be improved.

27. 发明授权

US06238943B1 Optical semiconductor device and a method of manufacturing the same 失效
标题翻译：光半导体装置及其制造方法
公开(公告)号：US06238943B1
公开(公告)日：2001-05-29
申请号：US09401784
申请日：1999-09-22
申请人： Hirohiko Kobayashi , Mitsuru Ekawa , Nirou Okazaki , Shouichi Ogita , Haruhisa Soda , Haruhiko Tabuchi , Takuya Fujii
发明人： Hirohiko Kobayashi , Mitsuru Ekawa , Nirou Okazaki , Shouichi Ogita , Haruhisa Soda , Haruhiko Tabuchi , Takuya Fujii
IPC分类号： H01L2100
CPC分类号： G02B6/12004 , G02B6/305 , G02B2006/12128 , G02B2006/12195 , H01S5/026 , H01S5/0265 , H01S5/1014 , H01S5/106 , H01S5/1064 , H01S5/20 , H01S5/2272 , H01S5/3428 , Y10S438/942
摘要： An optical semiconductor device of the present invention is provided with a core layer having a quantum well layer in that film thickness gets thinner from a inner region to an end portion in an optical waveguide region.
摘要翻译：本发明的光半导体装置具有在光波导区域中从内部区域到端部部分的薄膜厚度的量子阱层的芯层。

28. 发明授权

US06925103B2 Gain-coupled DFB laser diode 有权
标题翻译：增益耦合DFB激光二极管
公开(公告)号：US06925103B2
公开(公告)日：2005-08-02
申请号：US10282230
申请日：2002-10-29
申请人： Tsutomu Ishikawa , Hirohiko Kobayashi , Norihiko Sekine , Hajime Shoij
发明人： Tsutomu Ishikawa , Hirohiko Kobayashi , Norihiko Sekine , Hajime Shoij
IPC分类号： H01S5/10 , H01S5/12 , H01S5/223 , H01S5/34 , H01S5/343 , H01S5/187
CPC分类号： B82Y20/00 , H01S5/106 , H01S5/1228 , H01S5/223 , H01S5/3425
摘要： A gain-coupled DFB laser diode includes a multiple quantum well active layer and a pair of cladding layers sandwiching the multiple quantum well active layer vertically, wherein the multiple quantum well active layer includes a plurality of gain regions aligned in a direction of propagation of a laser beam and repeated periodically, each of the gain regions having a multiple quantum well structure, and a buried layer fills a gap between a pair of adjacent gain regions, wherein the buried layer includes a plurality of high-refractive index layers and a plurality of low-refractive index layers, each of the high-refractive index layers is formed of a first semiconductor material having a first bandgap, while each of the low-refractive index layers is formed of a second semiconductor material having a second, larger bandgap.
摘要翻译：增益耦合DFB激光二极管包括多量子阱有源层和垂直夹着多量子阱活性层的一对包覆层，其中多量子阱活性层包括沿着传播方向对齐的多个增益区域激光束并且周期性重复，每个增益区域具有多量子阱结构，并且掩埋层填充一对相邻增益区域之间的间隙，其中所述掩埋层包括多个高折射率层和多个低折射率层，每个高折射率层由具有第一带隙的第一半导体材料形成，而每个低折射率层由具有第二较大带隙的第二半导体材料形成。

29. 发明授权

US06426515B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US06426515B2
公开(公告)日：2002-07-30
申请号：US09820929
申请日：2001-03-30
申请人： Tsutomu Ishikawa , Hirohiko Kobayashi , Tsuyoshi Yamamoto , Hajime Shoji
发明人： Tsutomu Ishikawa , Hirohiko Kobayashi , Tsuyoshi Yamamoto , Hajime Shoji
IPC分类号： H01L2906
CPC分类号： H01S5/1228
摘要： In a semiconductor light-emitting device including an MQW diffraction grating structure mainly used in a gain-coupled DFB laser, the ratio of the gain coupling coefficient to the index coupling coefficient is increased by making each well layer in MQW-A thicker than that in MQW-B. Each well layer and each barrier layer in the MQW structure are made of different compositions of GaInAsP. This implements a semiconductor light-emitting device with high wavelength stability, which does not induce any mode hop even during modulation with high output power or even when external optical feedback is present.
摘要翻译：在包括主要用于增益耦合DFB激光器的MQW衍射光栅结构的半导体发光器件中，增益耦合系数与折射率耦合系数的比例通过使MQW-A中的每个阱层比 MQW-B。 MQW结构中的每个阱层和每个阻挡层由不同的GaInAsP组成制成。这实现了具有高波长稳定性的半导体发光器件，即使在具有高输出功率的调制期间甚至在外部光学反馈存在时也不会引起任何模式跳变。

30. 发明授权

US6157155A Robot path planning method where bending owing to load is taken into consideration 失效
标题翻译：考虑负载弯曲的机器人路径规划方法
公开(公告)号：US6157155A
公开(公告)日：2000-12-05
申请号：US402606
申请日：1995-03-13
申请人： Hirohiko Kobayashi
发明人： Hirohiko Kobayashi
IPC分类号： B25J9/10 , B25J9/16 , B25J9/18 , G05B19/18 , G05B19/404 , G05B19/4093 , G05B19/408
CPC分类号： B25J9/1664 , B25J9/1674 , G05B2219/39364 , G05B2219/40523 , G05B2219/41167
摘要： The present invention relates to a robot path planning method for determining the path of a robot, taking into consideration the bending effect of the robot path when heavy tools are load onto the robot. Specifically, straight line P'-Q' to be actually drawn by the distal end of the robot tool is calculated by using the positions P and Q of the distal end of the tool at the start point and at the end point of the straight line recognized by the robot controller. And, the interpolation points H1', H2', H3', . . . are set on this line P'-Q'. Then, the bending amount .DELTA..theta.pj and .DELTA..theta.qj at the start point P' and at the end point Q' of this line P'-Q' are respectively determined. And, the bending amount at each interpolation point H1', H2', . . . are calculated from these bending amounts .DELTA..theta.pj and .DELTA..theta.qj, and the position on the line P'-Q' of each interpolation point. Then, the values obtained by subtracting from each interpolation point H1', H2', . . . corresponding bending amounts are set as the interpolation points H1, H2, H3, . . . to be actually used in the robot controller.
摘要翻译：本发明涉及一种用于确定机器人的路径的机器人路径规划方法，考虑到当重型工具被加载到机器人上时机器人路径的弯曲效应。具体来说，通过使用工具的前端的位置P和Q在直线的起始点和终点处计算由实际上由机器人工具的远端拉出的直线P'-Q' 被机器人控制器识别。并且，内插点H1'，H2'，H3'，。。。被设置在该线P'-Q'上。然后，分别确定该线P'-Q'的起始点P'和终点Q'处的弯曲量DELTAθpj和DELTAθqj。并且，每个内插点H1'，H2'，...的弯曲量。。。由这些弯曲量DELTAθj和DELTAθqj以及每个内插点的线P'-Q'上的位置计算。然后，通过从每个内插点H1'，H2'，...减去获得的值。。。相应的弯曲量被设置为内插点H1，H2，H3。。。实际上用于机器人控制器。

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