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21. 发明授权

US5578108A Ultrafine particles of amorphous metal and method for production thereof 失效
标题翻译：非晶态金属微粒及其制造方法
公开(公告)号：US5578108A
公开(公告)日：1996-11-26
申请号：US313827
申请日：1994-09-28
申请人： Tadashi Yamaguchi , Katsutoshi Nosaki , Akihisa Inoue , Tsuyoshi Masumoto
发明人： Tadashi Yamaguchi , Katsutoshi Nosaki , Akihisa Inoue , Tsuyoshi Masumoto
IPC分类号： B22F9/14 , B22F1/00 , B22F9/12 , C22C1/00 , C22C45/00 , C22C45/02 , C22C45/10 , C23C14/00
CPC分类号： B22F9/12 , C22C1/002 , C22C45/02 , C22C45/10 , B22F2999/00
摘要： Ultrafine amorphous metal particles which combine the properties of ultrafine particles with those of an amorphous alloy and a method for the production thereof are disclosed. The ultrafine amorphous metal particles are produced by a method which comprises discharging a plasma arc against a raw metal capable of forming a carbide in a reaction gas using an inert gas as a main component thereof and containing a hydrocarbon gas, and allowing the metal which has been consequently vaporized to contact the reaction gas which has been consequently converted into a plasma, thereby inducing formation of a solid solution of carbon atoms in the vaporized metal and quenching the solid solution in the reaction gas to confer an amorphous structure thereon. As the raw metal, at least one metal selected from the group consisting of Fe, Mo, Nb, Ta, Ti, Zr, Al, Si, and Cr is preferably used. By this method are obtained ultrafine amorphous metal particles which comprise the metal mentioned above, possess at least 50% by volume of an amorphous phase, and have particle diameters of not more than 500 nm.
摘要翻译：公开了将超细颗粒的性质与非晶合金的特性结合的超细无定形金属颗粒及其制造方法。超细非晶态金属颗粒通过以下方法制造：使用惰性气体作为主要成分并含有烃气体的反应气体中能够形成碳化物的原料的等离子体电弧放电，随后蒸发以接触已经转化成等离子体的反应气体，从而在蒸发的金属中引起碳原子的固溶体的形成，并淬灭反应气体中的固溶体以赋予其非晶结构。作为原料金属，优选使用选自Fe，Mo，Nb，Ta，Ti，Zr，Al，Si和Cr中的至少一种金属。通过该方法获得了包含上述金属的超细无定形金属颗粒，具有至少50体积％的非晶相，并且具有不大于500nm的粒径。

22. 发明授权

US5468697A Composite ultrafine particles of aluminum nitride and rare earth nitride, method for production and sintered article thereof 失效
标题翻译：氮化铝和稀土氮化物的复合超细颗粒，其生产方法及其烧结制品
公开(公告)号：US5468697A
公开(公告)日：1995-11-21
申请号：US212864
申请日：1994-03-15
申请人： Tadashi Yamaguchi , Katsutoshi Nosaki , Akihisa Inoue , Tsuyoshi Masumoto
发明人： Tadashi Yamaguchi , Katsutoshi Nosaki , Akihisa Inoue , Tsuyoshi Masumoto
IPC分类号： C01B21/06 , C01B21/072 , C04B35/581 , C30B11/00
CPC分类号： B82Y30/00 , C01B21/0602 , C01B21/0724 , C04B35/581 , C30B11/00 , C30B29/38 , C01P2002/72 , C01P2004/04 , C01P2004/10 , C01P2004/11 , C01P2004/20 , C01P2004/50 , C01P2004/54 , C01P2004/64
摘要： Ultrafine particles of aluminum nitride having a morphologically anisotropic structure of columns, plates, or whiskers such that the ratio of thickness or width to length or the ratio of thickness to width or length of particle is not less than 1 are produced by thermally melting a binary alloy of metallic aluminum and a rare earth element in a nitriding atmosphere containing nitrogen. By this method are produced composite ultrafine particles which substantially comprise ultrafine particles of aluminum nitride having the morphologically anisotropic structure and ultrafine particles of the rare earth nitride which functions as a sintering auxiliary therefor. The composite ultrafine particles or an aggregate thereof are usable as a raw material for the production of a sintered article, a reinforcing material for various metal-based composite materials, a blast powder, and the like.
摘要翻译：具有柱，板或晶须的形态各向异性结构的氮化铝的超细颗粒，使得厚度或宽度与长度的比率或者颗粒的厚度与宽度或长度的比率不小于1是通过将二元金属铝和稀土元素的合金在含氮的氮化气氛中。通过该方法制造了复合超细颗粒，其基本上包含具有形态各向异性结构的氮化铝的超细颗粒和作为其烧结助剂的稀土氮化物的超细颗粒。复合超细颗粒或其聚集体可用作生产烧结制品的原料，用于各种金属基复合材料的增强材料，鼓风粉末等。

23. 发明授权

US5243377A Lithography information control system 失效
标题翻译： LITHOGRAPHY信息控制系统
公开(公告)号：US5243377A
公开(公告)日：1993-09-07
申请号：US861034
申请日：1992-03-31
申请人： Toshikazu Umatate , Tadashi Yamaguchi
发明人： Toshikazu Umatate , Tadashi Yamaguchi
IPC分类号： G03F7/20 , G05B15/02 , H01L21/027 , H01L21/30 , H01L21/82
CPC分类号： G03F7/70525 , G03F7/20 , G03F7/70558 , G03F7/70625 , G03F7/70991
摘要： A lithography system comprises an information gathering apparatus for gathering specific information set in each of plural exposure apparatus and variable according to operating conditions of each of the plural exposure apparatus in response to masks to be used in each of the plural exposure apparatus and substrates supplied thereto, or information obtained by measuring or evaluating the process state of a substrate processed by each of the plural exposure apparatus, independently from the control by a process control apparatus for controlling supply of the masks, supply of plural substrates to be exposed in each of the plural exposure apparatus, and operating conditions of each of the plural exposure apparatus in response to the masks and substrates supplied thereto. The lithography system further comprises a system observer apparatus capable of modifying or correcting a part of working paremeters set in each of the exposure apparatus, based on the gathered information, in such a manner that the operating conditions set by the process control apparatus can be stably maintained, independently from the control of the process control apparatus.

24. 发明授权

US4716291A Copying machine 失效
标题翻译：复印机
公开(公告)号：US4716291A
公开(公告)日：1987-12-29
申请号：US733806
申请日：1985-05-14
申请人： Hiroshi Sakamoto , Toshihiro Torigoe , Tadashi Yamaguchi
发明人： Hiroshi Sakamoto , Toshihiro Torigoe , Tadashi Yamaguchi
IPC分类号： B41J3/28 , B41J3/36 , B41J3/44 , H04N1/107 , H04N1/207 , G03C5/16
CPC分类号： B41J3/36 , B41J3/44 , H04N1/107 , H04N1/1075 , H04N1/207 , H04N2201/0446
摘要： A portable copying machine has a thermal head printer for printing image information on a copy paper, a Charge Coupled Device for reading out the image information, and a time-limit device of which setting time is varied in response to the voltage of power source, whereby a copying shade of the copy paper is kept constant, even if the voltage of a power source is changed by controlling the strobe pulse of the thermal head printer by the time-limit device.
摘要翻译：便携式复印机具有用于在复印纸上打印图像信息的热敏头打印机，用于读出图像信息的电荷耦合装置，以及响应于电源电压而改变设定时间的限时装置，由此即使通过限制装置控制热打印头的选通脉冲来改变电源的电压，复印纸的复印色调保持恒定。

25. 发明授权

US4537645A Magnetically traceable explosives with stability and a method for the preparation thereof 失效
标题翻译：具有稳定性的磁性可追溯炸药及其制备方法
公开(公告)号：US4537645A
公开(公告)日：1985-08-27
申请号：US565571
申请日：1983-12-27
申请人： Tadashi Yamaguchi , Takayuki Ono , Michitoshi Hirata , Toshihiko Yokoyama
发明人： Tadashi Yamaguchi , Takayuki Ono , Michitoshi Hirata , Toshihiko Yokoyama
IPC分类号： C06B21/00 , C06B23/00 , C06B45/18
CPC分类号： C06B45/18 , C06B21/00 , C06B23/008 , Y10S149/123
摘要： The invention provides a novel magnetically traceable or detectable explosive blended with a magnetic ferrite powder which facilitates the detection of the misfired explosive, e.g. dynamite, remaining in the field after blasting by a magnetic means but not to adversely affect the stability of the explosive. The ferrite powder is freed of any free alkalinity on the surface before blending with the explosive either by washing with water, neutralization with a dilute acid, reaction with an acid followed by washing with water or neutralization with an alkali and/or by coating with a polymeric material on the particles. The most efficient method for the coating of the ferrite powder with a polymeric material is the in situ polymerization of a radical-polymerizable monomer in contact with the ferrite particles in the presence of hydrogensulfite ions and the explosives blended with such a polymer-coated ferrite powder retain their stability even after a prolonged storage.
摘要翻译：本发明提供了一种新颖的磁性可追踪或可检测的爆炸物与磁性铁氧体粉末混合，这有助于检测失火的炸药，例如，炸药，通过磁力手段在爆破后留在现场，但不会不利地影响炸药的稳定性。通过用水洗涤，用稀酸中和，与酸反应，然后用水洗涤或用碱中和，和/或通过涂覆，铁素体粉末在与爆炸物混合之前，没有任何游离碱度颗粒上的聚合材料。用聚合物材料涂覆铁氧体粉末的最有效的方法是在亚硫酸氢盐离子存在下，与铁氧体颗粒接触的自由基聚合单体的原位聚合，并且与这种聚合物涂覆的铁氧体粉末保持其稳定性即使长期存放。

26. 发明授权

US08587175B2 Rotor of rotary electric machine 有权
标题翻译：旋转电机转子
公开(公告)号：US08587175B2
公开(公告)日：2013-11-19
申请号：US13283591
申请日：2011-10-28
申请人： Tadashi Yamaguchi , Masashi Inoue
发明人： Tadashi Yamaguchi , Masashi Inoue
IPC分类号： H02K1/17
CPC分类号： H02K1/276 , H02K2213/03
摘要： A rotor of a rotary electric machine includes a rotor core and a plurality of magnetic parts. The rotor core has a plurality of slots provided along a circumferential direction. Each of the slots is separated by a center rib. The plurality of magnetic parts are disposed inside the rotor core along the circumferential direction at a predetermined interval. Each of the magnetic parts has a magnetization direction alternating with each other. Each of the magnetic parts includes a pair of permanent magnets placed inside each of the slots. The rotor core comprises a plurality of through-holes and a reinforcement rib. The plurality of through-holes each extend in an axial direction on an inner circumferential side of each of the magnetic parts. The reinforcement rib is disposed in each of the through-holes and in alignment with a circumferential center line of the center rib.
摘要翻译：旋转电机的转子包括转子铁芯和多个磁性部件。转子芯具有沿圆周方向设置的多个槽。每个槽由中心肋分开。多个磁性部件以预定间隔沿圆周方向设置在转子芯内。每个磁性部件具有彼此交替的磁化方向。每个磁性部件包括放置在每个槽内的一对永磁体。转子芯包括多个通孔和加强肋。多个通孔各自在每个磁性部件的内周侧沿轴向延伸。加强肋设置在每个通孔中并且与中心肋的圆周中心线对准。

27. 发明授权

US08436482B2 Semiconductor device, and method of fabricating semiconductor device 有权
标题翻译：半导体器件以及半导体器件的制造方法
公开(公告)号：US08436482B2
公开(公告)日：2013-05-07
申请号：US12792036
申请日：2010-06-02
申请人： Tadashi Yamaguchi
发明人： Tadashi Yamaguchi
IPC分类号： H01L23/544 , H01L23/48
CPC分类号： H01L23/3192 , H01L21/561 , H01L23/3114 , H01L23/525 , H01L23/544 , H01L24/02 , H01L24/11 , H01L24/13 , H01L2223/54433 , H01L2223/54453 , H01L2224/0231 , H01L2224/0236 , H01L2224/02375 , H01L2224/0401 , H01L2224/16 , H01L2224/274 , H01L2224/27416 , H01L2924/14 , H01L2924/00
摘要： There is provided a semiconductor device including: an insulating layer provided on a substrate and formed with plural cavities; wiring lines provided on the insulating layer; plural branched wiring lines that branch from the wiring lines so as to respectively overlap with the plural cavities when seen in plan view; a conductive portion formed on the wiring lines; an external terminal formed on the conductive portion; and a sealing resin layer that seals the wiring lines and the conductive portion.
摘要翻译：提供一种半导体器件，包括：绝缘层，设置在基板上并形成有多个空腔; 设在绝缘层上的布线; 多个分支布线从布线分支，以在平面图中看到时分别与多个空腔重叠; 形成在布线上的导电部分; 形成在所述导电部上的外部端子; 以及密封树脂层，其密封布线和导电部。

28. 发明授权

US08354302B2 Semiconductor device fabrication method including formation of columnar electrodes having protrusion sections 失效
标题翻译：包括形成具有突出部分的柱状电极的半导体器件制造方法
公开(公告)号：US08354302B2
公开(公告)日：2013-01-15
申请号：US12975624
申请日：2010-12-22
申请人： Tadashi Yamaguchi
发明人： Tadashi Yamaguchi
IPC分类号： H01L21/00
CPC分类号： H01L24/11 , H01L2223/5448 , H01L2224/0401 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05557 , H01L2224/05559 , H01L2224/05571 , H01L2224/05572 , H01L2224/05647 , H01L2224/13006 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2224/16 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2224/05552 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A semiconductor device includes a semiconductor chip having a plurality of electrode pads, and a rewiring pattern having a plurality of interconnects connected to the electrode pads and extending over insulation film. The semiconductor device includes a plurality of columnar electrodes each having a main body section and a protrusion section, and a sealing section having a top face having a height the same as the top faces of the protrusion sections. The semiconductor device includes solder balls formed on the protrusion sections and has a plurality of trenches in the sealing section. Each trench has a depth which reaches the boundary between the main body and protrusion of the electrode. The side faces of the protrusion section are exposed by the trenches. Each solder ball is electrically connected to the top and side faces of the protrusion section of each electrode.
摘要翻译：半导体器件包括具有多个电极焊盘的半导体芯片和具有连接到电极焊盘并在绝缘膜上延伸的多个互连的重新布线图案。半导体器件包括多个柱状电极，每个柱状电极具有主体部分和突出部分，以及密封部分，其具有与突出部分的顶面相同的高度的顶面。半导体器件包括形成在突出部分上的焊球，并且在密封部分中具有多个沟槽。每个沟槽的深度达到主体和电极突起之间的边界。突起部分的侧面由沟槽露出。每个焊球与每个电极的突出部分的顶面和侧面电连接。

29. 发明授权

US08148248B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08148248B2
公开(公告)日：2012-04-03
申请号：US13053733
申请日：2011-03-22
申请人： Toshiaki Tsutsumi , Tomonori Okudaira , Keiichiro Kashihara , Tadashi Yamaguchi
发明人： Toshiaki Tsutsumi , Tomonori Okudaira , Keiichiro Kashihara , Tadashi Yamaguchi
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L23/485 , H01L21/28518 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole.
摘要翻译：提供了具有金属硅化物层的半导体器件，其可以抑制器件的故障和功率消耗的增加。半导体器件具有包含硅并具有主表面的半导体衬底，形成在半导体衬底的主表面中的第一和第二杂质扩散层，形成在第二杂质扩散层上的金属硅化物，以及氮化硅膜和第一层间绝缘膜依次层叠在金属硅化物上。在半导体器件中，形成穿过氮化硅膜和第一层间绝缘膜并到达金属硅化物表面的接触孔。位于接触孔正下方的金属硅化物的一部分的厚度小于位于接触孔周围的金属硅化物的一部分的厚度。

30. 发明申请

US20110092037A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110092037A1
公开(公告)日：2011-04-21
申请号：US12977573
申请日：2010-12-23
申请人： Tadashi Yamaguchi , Koyu Asai , Mahito Sawada , Kiyoteru Kobayashi , Tatsunori Murata , Satoshi Shimizu
发明人： Tadashi Yamaguchi , Koyu Asai , Mahito Sawada , Kiyoteru Kobayashi , Tatsunori Murata , Satoshi Shimizu
IPC分类号： H01L21/336
CPC分类号： H01L21/76802 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76837 , H01L23/53295 , H01L23/564 , H01L2924/0002 , H01L2924/13091 , H01L2924/00
摘要： In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.
摘要翻译：为了阻止通过HDP-CVD等形成层间绝缘膜时产生的氢离子，从而抑制氢离子对器件的不利影响，在包括接触层，金属互连和层间绝缘的半导体器件中在其上形成有栅电极的半导体衬底上，通过使用含氢原子的气体的偏压施加等离子体CVD在金属互连上形成层间绝缘膜，并且在金属互连的底层设置氮氧化硅膜，层间绝缘膜。

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