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    • 30. 发明申请
    • NON-VOLATILE MEMORY DEVICES WITH VERTICALLY INTEGRATED CAPACITOR ELECTRODES
    • 具有垂直集成电容器电极的非易失性存储器件
    • US20150318296A1
    • 2015-11-05
    • US14702038
    • 2015-05-01
    • Hyun-suk KimJoon-hee LeeKee-jeong Rho
    • Hyun-suk KimJoon-hee LeeKee-jeong Rho
    • H01L27/115H01L49/02
    • H01L27/11573H01L27/11519H01L27/11521H01L27/11526H01L27/11556H01L27/11565H01L27/11568H01L27/1157H01L27/11582H01L28/60H01L28/91
    • Provided is a vertical non-volatile memory device in which a capacitor constituting a peripheral circuit region is formed as a vertical type so that an area occupied by the capacitor in the entire device can be reduced as compared with a planar capacitor. Thus, a non-volatile memory device may be highly integrated and have a high capacity. The device includes a substrate having a cell region and a peripheral circuit region, a memory cell string including a plurality of vertical memory cells formed in the cell region and channel holes formed to penetrate the vertical memory cells in a first direction vertical to the substrate, an insulating layer formed in the peripheral circuit region on the substrates at substantially the same level as an upper surface of the memory cell string, and a plurality of capacitor electrodes formed on the peripheral circuit region to penetrate at least a portion of the insulating layer in the first direction, the plurality of capacitor electrodes extending parallel to the channel holes. The plurality of capacitor electrodes are spaced apart from one another in a second direction parallel to the substrate, and the insulating layer is interposed between a pair of adjacent capacitor electrodes from among the plurality of capacitor electrodes.
    • 提供了一种垂直非易失性存储器件,其中构成外围电路区域的电容器形成为垂直型,使得与平面电容器相比,整个器件中的电容器占据的面积可以减小。 因此,非易失性存储器件可以高度集成并具有高容量。 该装置包括具有单元区域和外围电路区域的基板,包括形成在单元区域中的多个垂直存储单元的存储单元串和形成为沿垂直于基板的第一方向穿透垂直存储单元的通道孔, 形成在基板上的外围电路区域中的与存储单元串的上表面基本相同的绝缘层,以及形成在外围电路区域上的多个电容器电极,以穿透绝缘层的至少一部分 第一方向,多个电容器电极平行于通道孔延伸。 多个电容器电极在与基板平行的第二方向上彼此间隔开,并且绝缘层插入在多个电容器电极中的一对相邻的电容器电极之间。