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    • 21. 发明授权
    • Variable orifice nozzle
    • 可变孔喷嘴
    • US07938337B2
    • 2011-05-10
    • US11973639
    • 2007-10-09
    • Lei Tian
    • Lei Tian
    • B05B1/30B05B1/34
    • A01G25/09A01C23/007B05B1/3006B05B1/323B05B1/341G05D7/0113Y10S239/12
    • A spray nozzle assembly includes a pressure dependent variable spray orifice and an internal chamber which is at least partially bound by a flexibly deformable sidewall. At its distal end, the sidewall terminates at a distal face defining the spray orifice extending therethrough. A metering member extends distally from the internal chamber and through at least a portion of the spray orifice. As the pressure of a liquid supplied to the internal chamber by a liquid supply pathway varies, the flexibly deformable sidewall expands or contracts in response thereto. As the sidewall expands and contracts, the distal face moves relative to the metering member to change the effective size of the spray orifice.
    • 喷嘴组件包括由压力决定的可变喷射孔和至少部分地由柔性可变形的侧壁限定的内部室。 在其远端处,侧壁终止于限定延伸穿过其中的喷孔的远侧面。 计量构件从内部腔室向远侧延伸并且穿过喷射口的至少一部分。 当通过液体供应路径供应到内部室的液体的压力变化时,柔性可变形的侧壁响应于此而膨胀或收缩。 当侧壁膨胀和收缩时,远侧面相对于计量构件移动以改变喷孔的有效尺寸。
    • 24. 发明授权
    • Sub-threshold CMOS temperature detector
    • 次阈值CMOS温度检测器
    • US08177426B2
    • 2012-05-15
    • US12510277
    • 2009-07-28
    • Shubao GuoJie JinZhenguo SunLei TianXiaowen Wu
    • Shubao GuoJie JinZhenguo SunLei TianXiaowen Wu
    • G01K7/00
    • G01K7/01G01K3/005
    • A CMOS temperature detection circuit includes a start-up circuit for generating a start-up voltage (VN), and a proportional to absolute temperature (PTAT) current generator coupled to the start-up circuit for generating a PTAT current. The start-up voltage turns on the PTAT current generator, and the PTAT current generator uses the sub-threshold characteristics of CMOS to generate the PTAT current. A PTAT voltage generator coupled to the PTAT current generator receives the PTAT current and generates a PTAT voltage and an inverse PTAT voltage (VBE). A comparator circuit coupled to the voltage generator compares the inverse PTAT voltage to first and second alarm limits, which are defined using the generated PTAT voltage, and generates an alarm signal based on the comparison results.
    • CMOS温度检测电路包括用于产生启动电压(VN)的启动电路,以及与用于产生PTAT电流的启动电路耦合的绝对温度(PTAT)电流发生器的比例。 启动电压打开PTAT电流发生器,PTAT电流发生器使用CMOS的子阈值特性来产生PTAT电流。 耦合到PTAT电流发生器的PTAT电压发生器接收PTAT电流并产生PTAT电压和反向PTAT电压(VBE)。 耦合到电压发生器的比较器电路将反向PTAT电压与使用所产生的PTAT电压定义的第一和第二报警极限进行比较,并且基于比较结果产生报警信号。