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    • 28. 发明专利
    • TARGET FOR SPUTTERING
    • JPS63121662A
    • 1988-05-25
    • JP25872487
    • 1987-10-14
    • HITACHI METALS LTD
    • MATSUMOTO SHUNICHIROINUI TSUTOMUMIZUGUCHI TAKEO
    • C23C14/34
    • PURPOSE:To stably form a good-quality sputtered film on a substrate to be treated by joining a target for sputtering to a Cu block for cooling by using a metallized layer and brazing filler metal layer from the target side at the time of joining said target and block. CONSTITUTION:The target to be used in a sputtering device rises to a high temp. during use and, therefore, the target material 1 is joined to the block 4 for cooling consisting of metal such as Cu having high heat conductivity. The metallized layer 2 is formed to 0.1-30mum thickness by an ion plating, sputtering or wet plating method on the joint surface of the target material 1. Spare solder is formed on the surface thereof and the surface of the Cu block 4 for cooling, respectively and thereafter, the two spare solder surfaces are contacted with each other and are joined by heating to form the brazing filler metal layer 3, by which the target material 1 and the block 4 are securely joined. The cooling effect of the target 1 is thereby improved and the exfoliation of the target material 1 from the block 4 is prevented. The good-quality sputtered film is thus formed on the material to be treated.