专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JPH04306840A SINGLE BODY-STRUCTURED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04306840A
公开(公告)日：1992-10-29
申请号：JP7107091
申请日：1991-04-03
申请人： HITACHI LTD
发明人： MARUYAMA YASUO , SHIMIZU SHUICHI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/732
摘要： PURPOSE:To lower the base resistance of a bipolar transistor while reducing the junction capacitance between a base regions and a collector regions for enhancing the frequency characteristics of the transistor in the title single body structured semiconductor device loaded with the bipolar transistor. CONSTITUTION:In the title single body structured semiconductor device, the emitter region 8 is divided into multiple parts whereto respective wirings 9 are connected while base regions 5 are formed between respective divided emitter regions 8 and then the base leading-out electrodes 6 formed of a conductive layer different from the wirings 9 are connected to the base regions 5.

22. 发明专利

JPS5387163A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5387163A
公开(公告)日：1978-08-01
申请号：JP148377
申请日：1977-01-12
申请人： HITACHI LTD
发明人： MARUYAMA YASUO
IPC分类号： H01L21/02 , H01L21/30 , H01L21/31 , H01L21/316 , H01L27/12
摘要： PURPOSE:To perform the treatment of large diameter wafers by bonding a reinforcing wafer to a wafer for formation of elements by way of oxide films through the use of the fluidity of PSG.

23. 发明专利

JPS5230428A PHOTORESIST EXPOSURE METHOD 失效
公开(公告)号：JPS5230428A
公开(公告)日：1977-03-08
申请号：JP10592775
申请日：1975-09-03
申请人： HITACHI LTD
发明人： MARUYAMA YASUO
IPC分类号： G03C5/08 , G03B15/00 , G03C1/00 , G03F7/00 , G03F7/004 , G03F7/095 , G03F7/20 , G03F7/26 , H01L21/027 , H01L21/302
摘要： PURPOSE:To provide a photoresist exposure method unaffected by reflected lights and diffracted lights and the like by using a light absorbent added photoresist.

24. 发明专利

JPS56164582A SEMICONDUCTOR PIEZO-ELECTRIC ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS56164582A
公开(公告)日：1981-12-17
申请号：JP6781480
申请日：1980-05-23
申请人： HITACHI LTD
发明人： MARUYAMA YASUO
IPC分类号： H01L29/84
摘要： PURPOSE:To obtain a thin and highly precise diaphragm by a method wherein a piezo-electric resistor thin film is provided on an Si substrate through the intermediary of an SiO2 film, an aperture is provided by perfoming an etching on the Si located below the SiO2 film and the SiO2 film is used for diaphragm. CONSTITUTION:The SiO2 film 8 (or Si3N4) having a thickness of 0.8-2mum is provided on the Si substrate 7 and the resistor thin film, consisting of the semiconductor crystal such as Si, GeInSb and the like having a piezo-electric characteristic or conductive pressure-resisting resin, is formed. The suitable film thickness is approximately 0.6-2.5mum and a patterning is performed to obtain the pattern of the prescribed shape. Then the SiO2 film 10 for protection is formed by means of a CVD method and an Al electrode 11 is formed by selectively providing an aperture. A mask is provided on the back of the Si substrate and an aperture 12 is provided by performing an etching reaching the SiO2 film 8 using an HF type solution. According to this constitution, the thickness is contolled easily, beacuse the diaphragm is a heterologeous substance to the substrate, the accuracy in thickness is improved by one figure approximately and the chip size can be reduced remarkably in the same sensibility.

25. 发明专利

JPS5165570A Zetsuenmakuanaakehoho 失效
公开(公告)号：JPS5165570A
公开(公告)日：1976-06-07
申请号：JP13834674
申请日：1974-12-04
申请人： Hitachi Ltd
发明人： MARUYAMA YASUO
IPC分类号： H01L21/306

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式