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21. 发明专利

JPH0318118A DRIVING CIRCUIT FOR MOSFET 失效
公开(公告)号：JPH0318118A
公开(公告)日：1991-01-25
申请号：JP15038589
申请日：1989-06-15
申请人： HITACHI LTD
发明人： NISHISU KOUJI , FUJIE TOSHIAKI , KONO NAOFUMI
IPC分类号： H03K17/66 , H03K17/687 , H03K17/691
摘要： PURPOSE:To eliminate the limit of an increase in speed based upon transistor(TR) characteristics by speeding up the discharging of an MOSFET gate capacitor to be driven by a simple circuit without using any TR. CONSTITUTION:A TR 2 is turned on and off with rectangular control pulses and the output of a DC power source 22 are converted by the alternate conduction of FETs 3 and 4 connected to PP form into rectangular driving pulse, which is supplied to the connection point between the FETs 3 and 4. The driving pulse is applied to the primary coil of a pulse transformer 11 through capacitors 9 and 10 in the ON state of the FET 4 when rising, but then falls to a voltage clamped by a Zener element 7. When an element 3 is ON, the polarity of the voltage impressed to the primary coil is inverted and a negative voltage clamped by the element 8 is obtained. A voltage applied between the gate and source of an FET rises when the driving control pulse rises and falls, so the gate-source capacity of the FET is charged and discharged speedily to shorten the switching time.

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