专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JPS62214177A GASEOUS PHASE REACTOR 失效
公开(公告)号：JPS62214177A
公开(公告)日：1987-09-19
申请号：JP5574986
申请日：1986-03-13
申请人： HITACHI ELECTR ENG
发明人： AIKAWA HIROSHI , NAGASAKI KEIICHI , HACHITANI MASAYUKI
IPC分类号： H01L21/205 , C23C16/44 , C23C16/458 , C23C16/50 , H01L21/02 , H01L21/31 , H01L21/677
摘要： PURPOSE:To bring a reactive gas into uniform contact with a wafer on a circular wafer imposing base and to form an excellent film by forming a reaction chamber to an approximately square cross section, providing the imposing base to the center thereof and disposing wafer handling mechanisms to the respective corners of the reaction chamber in a manner that the mechanisms can move vertically. CONSTITUTION:The reaction chamber 100 of a gaseous phase reactor is formed to the square cross section and the circular wafer imposing base 110 is disposed to approximately the central part of the reaction chamber 100. The wafer handling mechanisms 120 are respectively disposed to the respective corners of the reaction chamber 100 and a shutter ring 130 is disposed adjacently to the outside peripheral part of the wafer imposing base 110. Each wafer handling mechanism 120 consists of a wafer receiving claw 122, an arm 124 to support the receiving claw 122, and a horizontal bar 126 to support the arm 124. The wafer handling mechanisms 120 and the shutter ring 130 are vertically movably constituted. The flow pattern of the reactive gas fed from the upper part of the reaction chamber 100 is thereby made uniform and the reactive gas contacts uniformly with the wafer on the imposing base 110.

22. 发明专利

JPH06151411A PLASMA CVD DEVICE 失效
公开(公告)号：JPH06151411A
公开(公告)日：1994-05-31
申请号：JP31941592
申请日：1992-11-04
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HIKIMA HITOSHI , HACHITANI MASAYUKI
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To evenly sustain the film quality and film thickness distribution of a thin film formed on a wafer surface by a method wherein a gas dispersing sheet having multiple through holes are arranged adjacently to an aluminum- made bored sheet. CONSTITUTION:A gas dispersing sheet 60 is arranged this side of a shower electrode 40. Next, a reactive gas led in by an inlet is mixed in the first gas reservoir 62 further to be led in the second gas reservoir 66 passing through holes 64 made in the dispersing sheet 60. Next, the reactive gas is mixed again in the second gas reservoir 66 to be fed to the wafer surface passing the other through holes 41 made in the shower electrode 40. In such a constitution, two gas reservoirs can be arranged so that the uneven feed of the reactive gas due to the fluctuation in the production requirements may be avoided thereby enabling the evenness in the film quality and film thickness on wafer surface of a produced CVD film to be enhanced.

23. 发明专利

JPH06151336A PLASMA CVD APPARATUS 失效
公开(公告)号：JPH06151336A
公开(公告)日：1994-05-31
申请号：JP31941692
申请日：1992-11-04
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HACHITANI MASAYUKI
IPC分类号： C23C16/50 , H01L21/205
摘要： PURPOSE:To obtain an apparatus wherein a cleaning rate and a deposition velocity can be made high while a film characteristic is being maintained by a method wherein an aluminum baffle plate provided with many through holes is inserted between a high-frequency electrode and a shower electrode. CONSTITUTION:A chamber 10 is provided with a susceptor 20 which has an Al soaking plate 22 constituting a grounding substrate electrode on the surface and which has a heater 21 used to heat the Al soaking plate 22 and with a high-frequency electrode 30 which is faced with the grounding substrate electrode 22 on the susceptor 20 and which is provided with an Al shower electrode 40 provided with many through holes 41. In such a plasma CVD apparatus 1, an Al obstacle plate 60 provided with many through holes 64 is inserted between the high-frequency electrode 30 and the shower electrode 40. Thereby, the baffle plate acts as a kind of capacitor, an electric field between the shower electrode and a lower-part electrode is strengthened, a material gas for film- formation reaction use can be decomposed in large quantities, and a deposition velocity can be made high.

24. 发明专利

JPH0557353B2 失效
公开(公告)号：JPH0557353B2
公开(公告)日：1993-08-23
申请号：JP7907186
申请日：1986-04-08
申请人： HITACHI ELECTR ENG
发明人： AIKAWA HIROSHI , NAGASAKI KEIICHI , HACHITANI MASAYUKI
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23C16/50 , C23C16/54 , C23F4/00 , H01L21/31

25. 发明专利

JPH04320031A WAFER HEATING SOAKING PLATE 失效
公开(公告)号：JPH04320031A
公开(公告)日：1992-11-10
申请号：JP11403391
申请日：1991-04-18
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HACHITANI MASAYUKI , NAGASAKI KEIICHI , HINO SHIGEKI
IPC分类号： C23C16/50 , H01L21/205 , H01L21/31
摘要： PURPOSE:To turn a reaction gas plasmatic favorably by high frequency voltage by spraying a metal over the surface of a base made of a ceramic sinter to form a metal coating and by making the metal coating into a ground electrode corresponding to a shower electrode. CONSTITUTION:A soaking plate 22 is constituted of a ceramic sinter of any of silicon carbide, silicon nitride, zirconia, or alumina. A proper metal is sprayed over the surface of a base to form a metal coating 222, which serves as a ground electrode. In this case, the surface of the ceramic base 221 is made satinlike with proper roughness to improve adhesiveness with the metal, and the thickness (t) of the metal coating 222 is adjusted to about 0.1-0.5mm so as to prevent peeling. For grounding the metal coating as the ground electrode, the part of a step D provided at an edge of the base 221 is treated with a metal coating 222.

26. 发明专利

JPH04318174A SUPPLYING DEVICE FOR GASEOUS TEOS 失效
公开(公告)号：JPH04318174A
公开(公告)日：1992-11-09
申请号：JP11403491
申请日：1991-04-18
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HACHITANI MASAYUKI , NAGASAKI KEIICHI
IPC分类号： B01J19/00 , B01J19/08 , C23C16/44 , C23C16/448 , C23C16/50 , H01L21/31
摘要： PURPOSE:To form a good-quality thin film having uniformity for a wafer by gasifying liquid tetraethylorthosilicate (TEOS) at the specified temp. and supplying this gas to a plasma CVD reaction furnace at the specified feed rate. CONSTITUTION:Liquid TEOS 14 held in a vessel 13 is maintained at the specified temp. by a heating heater 12. This temp. is preferably regulated to the prescribed temp. in a range within 70-80 deg.C slightly lower than b.p. of TEOS being >=100 deg.C. Gaseous TEOS generated herein and having specified concn. is led to a mass flow controller 19 via a takeout pipe 16. The feed rate of gaseous TEOS is controlled at the specified amount herein. Gaseous O2 of the prescribed amount is mixed with the gaseous TEOS passed therethrough and a gaseous raw material is obtained. This gaseous raw material is supplied to a plasma CVD reaction furnace 3 via a supply pipe 22 thermally insulated by a heater tape 23. Herein, the gaseous raw material is reacted by plasma and a silicon oxide thin film is formed on a wafer placed on a susceptor 33.

27. 发明专利

JPS63302523A PLASMA CVD DEVICE AND FILM FORMING METHOD 失效
公开(公告)号：JPS63302523A
公开(公告)日：1988-12-09
申请号：JP13879587
申请日：1987-06-02
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HIKIMA HITOSHI , SHIMONO MASAKI , NOZAKI ISATO , AIKAWA HIROSHI , NAGASAKI KEIICHI , HACHITANI MASAYUKI , NAGASHIMA SHIRO , TAKAMI KATSUMI
IPC分类号： H01L21/31 , H01L21/318
摘要： PURPOSE:To inhibit abnormal discharge generated in a shower electrode, and to prevent the deterioration of the film quality of plasma silicon nitride and the frequent generation of foreign matters by connecting a reaction-gas feed-in means to the shower electrode and connceting a gas feed pipe for blank depositing an silicon oxide film to the reaction-gas feed-in means. CONSTITUTION:In a plasma CVD device having a susceptor 2 and a shower electrode 4 oppositely faced to the susceptor 2 in a reaction furnace 1 and manufacturing an silicon nitride film, a reaction-gas feed-in means is connected to said shower electrode 4, and a gas feed pipe 30 for blank-depositing an silicon oxide film is further connected to the reaction-gas feed-in means. When the silicon nitride film is formed through a plasma CVD method, silicon oxide is blank deposited in the reaction furnace 1 first, silicon nitride is blank- deposited and the silicon nitride film is shaped onto the surface of a wafer. SiH4 and N2O gas are fed respectively into the furnace from feed pipes 20 and 30 before silicon nitride is blank-deposited, and silicon oxide is blank- deposited.

28. 发明专利

JPS63119523A PLASMA CVD APPARATUS 失效
公开(公告)号：JPS63119523A
公开(公告)日：1988-05-24
申请号：JP26618286
申请日：1986-11-08
申请人： HITACHI ELECTR ENG
发明人： NAGASAKI KEIICHI , AIKAWA HIROSHI , HACHITANI MASAYUKI
IPC分类号： H01L21/31 , H01J37/32 , H01L21/205
摘要： PURPOSE:To provide a CVD film of uniform film quality having no particular irregularity in density by disposing at least one heat insulating material respectively under a susceptor and on the outer periphery from the susceptor to a high-frequency electrode. CONSTITUTION:One or more heat insulating materials 72a-72c are disposed under a susceptor 60, and one or more heat insulating materials 80a-80c are disposed which surround the outer periphery from the susceptor to a high-frequency electrode 51. If a heating unit 63 of the susceptor 60 is energized, heat, which can escape only in the direction to the high-frequency electrode 51, is stored in the reaction space formed between the high-frequency electrode 51 and the upper surface of the susceptor 60, thereby increasing the temperature in this space to about 600-800 deg.C. The plasma CVD method at a high temperature allows formation of a uniform film as well as blunt pattern steps, whereby 'cavities' can effectively be prevented from occurring in the step part in the case of multilayer stacking. In order to prevent the electrode from breaking due to a high temperature, a coolant circulating path is provided within the support member, thereby circulating a coolant.

29. 发明专利

JPS63112346A WAFER CONVEYING MECHANISM 失效
公开(公告)号：JPS63112346A
公开(公告)日：1988-05-17
申请号：JP25480486
申请日：1986-10-28
申请人： HITACHI ELECTR ENG
发明人： NAGASAKI KEIICHI , AIKAWA HIROSHI , HACHITANI MASAYUKI
IPC分类号： B65H5/06 , B65G49/07 , H01L21/677 , H01L21/68
摘要： PURPOSE:To prevent foreign substances from sticking to the backside of a wafer during conveyance, by constituting a pulley of a shaft and a timing gear as well as a disc being tightly installed at both sides of the gear, and making the upper end face of a timing belt to be installed in the pulley lower than that of the disc. CONSTITUTION:Plural pieces of pulleys are arranged in a row at the specified interval and parallel at the specified width, respectively, and each pulley is constituted of a shaft 10, a timing gear 14 rotatably attached to this shaft 10 and a disc 16 tightly installed on both sides of this timing gear 14. And, a timing belt 20 provided with a groove being engaged with the timing gear 14 is installed in the pulley, and an upper end face of he timing belt 20 is made lower than that of the disc 16. Therefore, a wafer 40 is conveyed as making it point-contact with the upper end face of the pulley without making it utterly contact with the timing belt 40. In consequence, such a fear that foreign substances might stick to the backside of the wafer 40 during conveyance is almost eliminatable.

30. 发明专利

JPS62297469A ANTIFOGGING METHOD FOR PEEP WINDOW PART OF PLASMA VAPOR REACTION DEVICE AND PLASMA VAPOR REACTION DEVICE 失效
公开(公告)号：JPS62297469A
公开(公告)日：1987-12-24
申请号：JP14061486
申请日：1986-06-17
申请人： HITACHI ELECTR ENG
发明人： AIKAWA HIROSHI , NAGASAKI KEIICHI , HACHITANI MASAYUKI
IPC分类号： H01L21/205 , C23C16/50 , C23C16/52 , H01L21/31
摘要： PURPOSE:To effectively prevent or suppress the fogging of an insulated peep window part by impressing the voltage lower than impressed voltage to an anode side in the same phase to the peep window part. CONSTITUTION:The voltage lower than the voltage impressed to an anode side electrode 30 from a high-frequency power source 32 is adjusted to the same phase as the phase of the anode by a capacitor 60 and is impressed from the same power source 32 to the peep window part 50 of a light transmittable insulating member disposed to the side wall surface of a reaction chamber 1. The peep window part 50 is thereby made to have the same phase as the phase of the anode side and since the voltage is lower than the anode side voltage, a plasma region is concentrated to the cathode side, by which the fogging of the peep window part 50 is prevented or suppressed. The capacitor 60 is a phase advance capacitor and the voltage to be impressed on the peep window part 50 is about 10-50% of the voltage to be impressed on the anode. The above-mentioned light transmittable member is preferably of quartz glass.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式