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21. 发明授权

US10396186B2 Thin film transistor, method for fabricating the same, display panel and display device 有权
公开(公告)号：US10396186B2
公开(公告)日：2019-08-27
申请号：US15736799
申请日：2017-07-14
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Jiangbo Chen , Quanhu Li , Jingang Fang
IPC分类号： H01L29/66 , H01L21/443 , H01L21/4763 , H01L21/423 , H01L29/786 , H01L29/423 , H01L29/49 , H01L21/02 , H01L27/12 , H01L21/768 , H01L29/24 , H01L21/465 , H01L27/32
摘要： A thin film transistor, a method for fabricating the same, a display panel and a display device are disclosed. The method includes forming an active layer on a substrate; forming an insulating layer on the active layer and an exposed surface of the substrate; forming a first conductive layer on the insulating layer; patterning the first conductive layer and the insulating layer to form a first stack on the active layer, wherein the first stack includes a first portion of the first conductive layer and a first portion of the insulating layer, the first stack acts as a gate stack and the active layer includes a channel region below the gate stack and a source region and a drain region at two sides of the channel region; and performing plasma treatment on the first conductive layer, the source region and the drain region, to improve conductivity.

22. 发明授权

US10192991B2 Thin film transistor and manufacturing method thereof, array substrate and display device 有权
公开(公告)号：US10192991B2
公开(公告)日：2019-01-29
申请号：US15571553
申请日：2017-05-05
申请人： BOE Technology Group Co., Ltd.
发明人： Wei Liu , Jingang Fang
IPC分类号： H01L29/786 , H01L27/12 , H01L21/02 , H01L21/383 , H01L29/24 , G02F1/1368 , G02F1/167 , G02F1/1335 , H01L29/66 , H01L27/32
摘要： A thin film transistor and a manufacturing method thereof, an array substrate and a display device. The manufacturing method of the thin film transistor includes: providing a substrate; depositing an active layer film, a gate insulator layer film, and a gate metal layer film on the substrate in sequence, patterning the active layer film, the gate insulator layer film, and the gate metal layer film to form an active layer, a gate insulator layer and a gate metal layer respectively, and depositing an insulator layer film at a first temperature and patterning the insulator layer film to form an insulator layer; a portion of the active layer, which portion is not overlapped with the gate metal layer, is treated to become conductive to provide a conductor during deposition of the insulator layer film.

23. 发明授权

US09978875B2 Thin film transistor and method for manufacturing the same, array substrate and display device 有权
公开(公告)号：US09978875B2
公开(公告)日：2018-05-22
申请号：US15321056
申请日：2016-03-14
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Lungpao Hsin , Jingang Fang
IPC分类号： H01L21/00 , H01L29/10 , H01L29/786 , H01L29/24 , H01L29/45 , H01L27/12 , H01L29/66
CPC分类号： H01L29/78618 , H01L27/1225 , H01L29/24 , H01L29/45 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78696
摘要： The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate and a display device. The method for manufacturing a TFT includes forming a source electrode and a drain electrode, forming a metal layer on the source and drain electrodes, and forming a metal oxynitride semiconductor layer on the metal layer or on the source and drain electrodes and the metal layer. The metal layer is capable of being oxidized by oxygen ions in the metal oxynitride semiconductor layer.

24. 发明授权

US10177204B2 Method for manufacturing display substrate, display substrate and display device 有权
公开(公告)号：US10177204B2
公开(公告)日：2019-01-08
申请号：US15235458
申请日：2016-08-12
申请人： BOE Technology Group Co., Ltd.
发明人： Wei Li , Youngsuk Song , Jingang Fang , Hongda Sun
IPC分类号： H01L27/32 , H01L51/56 , H01L51/52
摘要： A method for manufacturing a display substrate, a display substrate and a display device are disclosed. The method includes: forming a thin-film transistor (TFT) array on a base substrate to form an array substrate; and forming a pixel define layer (PDL) on a non-pixel region of the array substrate by a patterning process. A photochromic material is uniformly distributed in the PDL; the PDL provided with the photochromic material can be converted from light-transmitting to light-shielding under action of light illumination; and the process that the PDL is converted from light-transmitting to light-shielding is irreversible.

25. 发明申请

US20180308984A1 Thin Film Transistor and Manufacturing Method Thereof, Array Substrate and Display Device 审中-公开
公开(公告)号：US20180308984A1
公开(公告)日：2018-10-25
申请号：US15571553
申请日：2017-05-05
申请人： BOE Technology Group Co., Ltd.
发明人： Wei Liu , Jingang Fang
IPC分类号： H01L29/786 , H01L27/12 , H01L21/02 , H01L21/383 , H01L29/66 , H01L29/24 , G02F1/1368 , G02F1/167 , G02F1/1335
CPC分类号： H01L29/78618 , G02F1/133514 , G02F1/1368 , G02F1/167 , G02F2201/123 , H01L21/02488 , H01L21/02565 , H01L21/34 , H01L21/383 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L27/127 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/786 , H01L29/7869
摘要： A thin film transistor and a manufacturing method thereof, an array substrate and a display device. The manufacturing method of the thin film transistor includes: providing a substrate; depositing an active layer film, a gate insulator layer film, and a gate metal layer film on the substrate in sequence, patterning the active layer film, the gate insulator layer film, and the gate metal layer film to form an active layer, a gate insulator layer and a gate metal layer respectively, and depositing an insulator layer film at a first temperature and patterning the insulator layer film to form an insulator layer; a portion of the active layer, which portion is not overlapped with the gate metal layer, is treated to become conductive to provide a conductor during deposition of the insulator layer film.

26. 发明授权

US09978995B2 Display substrate having a black matrix with a curved surface, method for manufacturing the same and display device 有权
公开(公告)号：US09978995B2
公开(公告)日：2018-05-22
申请号：US15306886
申请日：2016-03-14
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Jingang Fang , Wulin Shen , Hongda Sun , Chun I Lin
IPC分类号： H01L51/52 , H01L51/56 , H01L51/00
CPC分类号： H01L51/5284 , H01L27/322 , H01L51/0004 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： A display substrate having a black matrix with a curved surface, a method for manufacturing the same and a display device are provided. The display substrate includes a black matrix disposed between adjacent pixels, wherein a sidewall of the black matrix is a concave curved surface. During the formation of a color film, since the sidewall of the black matrix is formed as a concave curved surface, color film droplets in one sub-pixel may return into the sub-pixel along the curved surface while splashing to the sidewall of the black matrix, thereby the contamination to adjacent pixels caused by the droplets splashing may be avoided, and a yield of the substrate may be ensured.

27. 发明申请

US20180108781A1 LIGHT EMITTING DIODE DISPLAY SUBSTRATE, A METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE 审中-公开
公开(公告)号：US20180108781A1
公开(公告)日：2018-04-19
申请号：US15504030
申请日：2016-08-16
申请人： Boe Technology Group Co., Ltd.
发明人： Jingang Fang , Youngsuk Song , Hongda Sun , Wei Li
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12 , H01L51/00 , H01L51/56
CPC分类号： H01L29/78627 , H01L27/1214 , H01L27/32 , H01L27/3246 , H01L27/3276 , H01L27/3295 , H01L51/0011 , H01L51/0017 , H01L51/56
摘要： A light emitting diode display substrate, a method of manufacturing the same, and a display device are provided. The method includes: forming a planarization layer and a photoresist layer in sequence on a substrate on which a thin film transistor is formed, a light sensitivity of the planarization layer being higher than a light sensitivity of the photoresist layer; etching the planarization layer and the photoresist layer simultaneously, such that a pixel defining pattern is formed through a removed portion of the photoresist layer, and an anode via pattern is formed at a position of the planarization layer corresponding to the pixel defining pattern; forming an anode pattern layer on the substrate on which the above steps were performed, wherein the anode pattern layer comprises a plurality of anodes, such that the planarization layer located at edges of the anode via pattern covers edges of the anodes.

28. 发明申请

US20170187001A1 LIGHT EMITTING DIODE, DISPLAY SUBSTRATE AND DISPLAY DEVICE HAVING THE SAME, AND FABRICATING METHOD THEREOF 审中-公开
公开(公告)号：US20170187001A1
公开(公告)日：2017-06-29
申请号：US15303009
申请日：2016-04-06
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Jingang Fang , Xiaodi Liu , Dongfang Wang , Lungpao Hsin
IPC分类号： H01L51/52 , H01L51/56 , H01L27/32
CPC分类号： H01L51/5265 , H01L27/3211 , H01L27/3244 , H01L51/5215 , H01L51/5218 , H01L51/56 , H01L2227/323 , H01L2251/305 , H01L2251/308 , H01L2251/558
摘要： The present application discloses a light emitting diode comprising a plurality of sub-pixels comprising a first electrode layer, wherein the first electrode layer is a reflective electrode layer; a second electrode layer; a light emitting layer between the first electrode layer and the second electrode layer; a first microcavity tuning layer sandwiched by the first electrode layer and the light emitting layer within the plurality of sub-pixels; and a second microcavity tuning layer sandwiched by the first microcavity tuning layer and the light emitting layer within at least one of the plurality of sub-pixels, and the first microcavity tuning layer is sandwiched by the first electrode layer and the second microcavity tuning layer within the at least one of the plurality of sub-pixels. The first microcavity tuning layer is made of a material including a transparent conductive material in a first state and the second microcavity tuning layer is made of a material including a transparent conductive material in a second state, the first state and the second state are different states selected from a crystalline state and an amorphous state.

29. 发明授权

US09548324B2 Array substrate and method for fabricating the same 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US09548324B2
公开(公告)日：2017-01-17
申请号：US14430310
申请日：2014-05-12
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Yanzhao Li , Gang Wang , Dongfang Wang , Wei Liu , Jingang Fang
IPC分类号： H01L27/12 , H01L29/786 , H01L21/027
CPC分类号： H01L27/1288 , H01L21/0274 , H01L29/786 , H01L2924/0002 , H01L2924/00
摘要： An array substrate and a method for fabricating the same are disclosed. The method includes steps of providing a substrate (20), a first metal layer including patterns of gate electrodes (21, 24) of a first and second TFTs, an active layer (27) and a gate insulation layer (28) are formed on the substrate; forming an etch stop layer film and a photoresist sequentially on the substrate (20), and allowing the photoresist to form a first, second and third regions through gray-scale exposing and developing; forming a pattern of an etch stop layer (29), a connection via hole (30), and a contact via hole (31) respectively in the first, second and third regions through a patterning process; and forming source electrodes and drain electrodes (22, 23,25, 26) of the first and second TFTs. Photoresist of different thicknesses are disposed according to etch depths, thereby avoiding the over-etch of relatively shallow via holes.
摘要翻译：公开了阵列基板及其制造方法。该方法包括提供衬底（20）的步骤，包括第一和第二TFT的栅电极（21,24）的图案的第一金属层，有源层（27）和栅绝缘层（28）形成在基材; 在衬底（20）上依次形成蚀刻停止层膜和光致抗蚀剂，并且通过灰度曝光和显影使光致抗蚀剂形成第一，第二和第三区域; 通过图案化工艺在第一，第二和第三区域分别形成蚀刻停止层（29），连接通孔（30）和接触通孔（31）的图案; 以及形成所述第一和第二TFT的源电极和漏电极（22,23,25,26）。根据蚀刻深度设置不同厚度的光刻胶，从而避免相对浅的通孔的过度蚀刻。

30. 发明授权

US09312487B2 Apparatus and method for coating organic film 有权
公开(公告)号：US09312487B2
公开(公告)日：2016-04-12
申请号：US14241723
申请日：2013-12-16
申请人： BOE Technology Group Co., Ltd.
发明人： Wulin Shen , Chunsheng Jiang , Qing Dai , Haijing Chen , Guangcai Yuan , Jingang Fang
IPC分类号： H01L51/40 , H01L21/00 , H01L21/31 , H01L21/469 , H01L51/00 , H01L51/56 , B05D1/00 , B05B5/00 , B05B5/03 , B05B5/053
摘要： An apparatus and method for coating an organic film are disclosed. The apparatus comprises an evaporation device, an electron emission device and a spray device; wherein the evaporation device comprises an evaporation container, the evaporation container is a linear evaporation container, in which a uniform organic gas is generated; the electron emission device is horizontally arranged over the evaporation container such that the organic gas evaporated in the evaporation container is uniformly charged and becomes charged organic gas; the spray device is provided with an electric field, under which the charged organic gas is moved toward a substrate so as to deposit the organic film on the substrate.

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