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21. 发明授权

US08634226B2 Immunity of phase change material to disturb in the amorphous phase 有权
标题翻译：相变材料在非晶相中的干扰的抗扰度
公开(公告)号：US08634226B2
公开(公告)日：2014-01-21
申请号：US13158565
申请日：2011-06-13
申请人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
发明人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译：通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。

22. 发明申请

US20090159867A1 Phase change memory with layered insulator 有权
标题翻译：具有分层绝缘体的相变存储器
公开(公告)号：US20090159867A1
公开(公告)日：2009-06-25
申请号：US12004257
申请日：2007-12-20
申请人： Semyon D. Savransky , David L. Kencke , Ilya V. Karpov
发明人： Semyon D. Savransky , David L. Kencke , Ilya V. Karpov
IPC分类号： G11C11/34 , H01L45/00
CPC分类号： H01L45/1293 , G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
摘要： A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating layers and the pores may be filled with heaters, chalcogenide layers, and electrodes in some embodiments. The use of the two different insulator layers enables embodiments where thermal losses may be reduced and an amorphous region may be maintained along the entire length of the phase change material layer.
摘要翻译：相变存储器可以由具有明显不同热导率的两个不同层构成的绝缘体形成。在一些实施例中，可以在绝缘层的堆叠内形成孔，并且孔可以用加热器，硫族化物层和电极填充。使用两个不同的绝缘体层可实现其中可以减少热损失的实施例，并且可以沿着相变材料层的整个长度保持非晶区域。

23. 发明授权

US07420200B2 Damascene phase change memory 有权
标题翻译：大马士革相变记忆
公开(公告)号：US07420200B2
公开(公告)日：2008-09-02
申请号：US11649389
申请日：2007-01-04
申请人： Ilya V. Karpov
发明人： Ilya V. Karpov
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
摘要： A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties.
摘要翻译：相变材料可以包括由相对较小的相变材料和相对较大的电阻加热器形成的孔。结果，相变材料的相对较小部分可具有改进的性能。

24. 发明授权

US07390691B2 Increasing phase change memory column landing margin 有权
标题翻译：增加相变记忆柱着陆边界
公开(公告)号：US07390691B2
公开(公告)日：2008-06-24
申请号：US11262250
申请日：2005-10-28
申请人： Charles H. Dennison , Ilya V. Karpov
发明人： Charles H. Dennison , Ilya V. Karpov
IPC分类号： H01L21/00 , H01L21/336
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/1675
摘要： A phase change memory with higher column landing margin may be formed. In one approach, the column landing margin may be increased by increasing the height of an electrode. For example, the electrode being made of two disparate materials, one of which includes nitride and the other of which does not. In another approach, a hard mask is used which is of substantially the same material as an overlying and surrounding insulator. The hard mask and an underlying phase change material are protected by a sidewall spacer of a different material than the hard mask. If the hard mask and the insulator have substantially the same etch characteristics, the hard mask may be removed while maintaining the protective character of the sidewall spacer.
摘要翻译：可以形成具有较高列着陆边缘的相变存储器。在一种方法中，可以通过增加电极的高度来增加列着色边缘。例如，电极由两种不同的材料制成，其中之一包括氮化物，另一个不包括氮化物。在另一种方法中，使用与覆盖和围绕的绝缘体基本上相同的材料的硬掩模。硬掩模和下面的相变材料由与硬掩模不同的材料的侧壁间隔物保护。如果硬掩模和绝缘体具有基本相同的蚀刻特性，则可以去除硬掩模，同时保持侧壁间隔物的保护特性。

25. 发明授权

US07811885B2 Method for forming a phase change device 有权
标题翻译：形成相变装置的方法
公开(公告)号：US07811885B2
公开(公告)日：2010-10-12
申请号：US11725434
申请日：2007-03-19
申请人： Ilya V. Karpov
发明人： Ilya V. Karpov
IPC分类号： H01L21/336
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
摘要： A phase change device may be formed by forming a phase change material and an electrode in a pore in an insulator. The phase change material fills less of the pore than the electrode.
摘要翻译：可以通过在绝缘体的孔中形成相变材料和电极来形成相变装置。相变材料填充的孔比电极少。

26. 发明授权

US07754516B2 Fabricating sub-lithographic contacts 失效
标题翻译：制造亚光刻接触
公开(公告)号：US07754516B2
公开(公告)日：2010-07-13
申请号：US12287073
申请日：2008-10-06
申请人： Ming Jin , Ilya V. Karpov , Jinwook Lee , Narahari Ramanuja
发明人： Ming Jin , Ilya V. Karpov , Jinwook Lee , Narahari Ramanuja
IPC分类号： H01L45/00
CPC分类号： H01L45/16 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A small critical dimension element, such as a heater for an ovonic unified memory, may be formed within a pore by using successive sidewall spacers. The use of at least two successive spacers enables the limitations imposed by lithography and the limitations imposed by bread loafing to be overcome to provide reduced critical dimension elements.
摘要翻译：可以通过使用连续的侧壁间隔物在孔内形成小的关键尺寸元件，例如用于二次统一存储器的加热器。使用至少两个连续的间隔物使得能够克服通过光刻所施加的限制，并且克服由面包变形所施加的限制以提供减小的临界尺寸元件。

27. 发明申请

US20090244963A1 Programming multilevel cell phase change memories 有权
标题翻译：编程多电平单元相变存储器
公开(公告)号：US20090244963A1
公开(公告)日：2009-10-01
申请号：US12080006
申请日：2008-03-31
申请人： Ilya V. Karpov , Semyon D. Savransky
发明人： Ilya V. Karpov , Semyon D. Savransky
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C2013/0078 , G11C2013/0092
摘要： A multilevel phase change memory cell may have a plurality of intermediate levels between a set and a reset or a crystalline and amorphous states. These intermediate levels between set and reset may be differentiated not only by programming current, but also by different programming pulse widths. As a result, the intermediate states may be positioned, on the programming current versus programming pulse width curve, in regions of common resistance with a relatively large range of programming current.
摘要翻译：多电平相变存储单元可以具有集合和复位之间的多个中间电平或晶体和非晶态。可以通过编程电流，也可以通过不同的编程脉冲宽度来区分设置和复位之间的这些中间电平。结果，中间状态可以在编程电流与编程脉冲宽度曲线上在具有相对大的编程电流范围的公共电阻的区域中定位。

28. 发明授权

US07211819B2 Damascene phase change memory 有权
公开(公告)号：US07211819B2
公开(公告)日：2007-05-01
申请号：US10634139
申请日：2003-08-04
申请人： Ilya V. Karpov
发明人： Ilya V. Karpov
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
摘要： A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties.

29. 发明授权

US07990761B2 Immunity of phase change material to disturb in the amorphous phase 有权
标题翻译：相变材料在非晶相中的干扰的抗扰度
公开(公告)号：US07990761B2
公开(公告)日：2011-08-02
申请号：US12080001
申请日：2008-03-31
申请人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
发明人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译：通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。

30. 发明申请

US20090244964A1 Reducing temporal changes in phase change memories 有权
标题翻译：减少相变存储器的时间变化
公开(公告)号：US20090244964A1
公开(公告)日：2009-10-01
申请号：US12080021
申请日：2008-03-31
申请人： Semyon D. Savransky , Ilya V. Karpov
发明人： Semyon D. Savransky , Ilya V. Karpov
IPC分类号： G11C11/21
CPC分类号： G11C13/0061 , G11C7/04 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/0092 , G11C2213/77 , Y10S977/754
摘要： A phase change memory in the reset state may be heated to reduce or eliminate electrical drift.
摘要翻译：可以加热复位状态的相变存储器以减少或消除电漂移。

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