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    • 26. 发明授权
    • System and method for managing account of instant messenger
    • 管理即时通讯账号的系统和方法
    • US08892690B2
    • 2014-11-18
    • US12194292
    • 2008-08-19
    • Zhao LiuFan WangXiaobo Shao
    • Zhao LiuFan WangXiaobo Shao
    • G06F15/173H04L29/06H04L12/58
    • H04L63/105H04L51/04
    • A system for managing an Instant Messenger account including a process server and a database server, and the process server is adapted to receive enhanced association information of at least one account from at least one client terminal, transmit the enhanced association information to the database server; when receiving a service request from one client terminal, acquire the enhanced association information of an account corresponding to the client terminal from the database server, generate verification information according to the security level of the service request and transmit the verification information to the client terminal to verify the identity of the user using the client terminal; and the database server is adapted to save the enhanced association information of the at least one account.
    • 一种用于管理包括进程服务器和数据库服务器的Instant Messenger帐户的系统,并且所述进程服务器适于从至少一个客户终端接收至少一个帐户的增强关联信息,将所述增强关联信息发送到所述数据库服务器; 当从一个客户终端接收到服务请求时,从数据库服务器获取对应于客户终端的账户的增强关联信息,根据服务请求的安全级别生成验证信息,并将验证信息发送给客户终端 使用客户终端验证用户的身份; 并且所述数据库服务器适于保存所述至少一个帐户的所述增强的关联信息。
    • 27. 发明授权
    • Process for the preparation of esomeprazole and salts thereof
    • 艾美拉唑及其盐的制备方法
    • US08563733B2
    • 2013-10-22
    • US12855667
    • 2010-08-12
    • Fan WangLaura Kaye MontemayorDaqing CheStephen E. Horne
    • Fan WangLaura Kaye MontemayorDaqing CheStephen E. Horne
    • C07D401/12
    • C07D401/12Y02P20/55
    • A novel process for the preparation of omeprazole and its enantiomers, such as esomeprazole, as well as the preparation of related 2-(2-pyridinylmethyl-sulphinyl)-1H-benzimidazoles, including pantoprazole, lansoprazole and rabeprazole, as recemates or single enantiomers, and their alkali or alkaline salts has been developed. The novel process involves the surprising discovery that protection of the free-base benzimidazole sulfoxide (e.g. omeprazole or esomeprazole), by reaction with an alkyl, aryl or aralkyl chloroformate following oxidation of the corresponding sulfide, eliminates the need for its direct isolation. Subsequent removal of the protecting group with a solution of alkali or alkaline earth alkoxide in a C1-C4 alcohol directly provides the corresponding salt. By eliminating the need to handle the free-base benzimidazole sulfoxide, this advantageous procedure provides increased chemical yields over processes described in the art.
    • 一种用于制备奥美拉唑及其对映异构体的新方法,例如艾美拉唑,以及相关的2-(2-吡啶基甲基 - 亚磺酰基)-1H-苯并咪唑(包括泮托拉唑,兰索拉唑和雷贝拉唑)作为受体或单一对映异构体的制备, 并开发了它们的碱金属盐或碱金属盐。 该新方法涉及令人惊奇的发现:在相应的硫化物氧化后,通过与烷基,芳基或氯甲酸烷基酯反应来保护游离碱性苯并咪唑亚砜(例如奥美拉唑或埃索美拉唑)消除了对其直接分离的需要。 随后用碱金属或碱土金属醇溶液在C1-C4醇中除去保护基团直接提供相应的盐。 通过消除处理游离碱性苯并咪唑亚砜的需要,与本领域中描述的方法相比,该有利的方法提供了增加的化学产率。
    • 30. 发明申请
    • Mesa edge shielding trench Schottky rectifier and method of manufacture thereof
    • Mesa边缘屏蔽沟槽肖特基整流器及其制造方法
    • US20120168893A1
    • 2012-07-05
    • US12982714
    • 2010-12-30
    • Wei LiuFan WangXiaozhong Sun
    • Wei LiuFan WangXiaozhong Sun
    • H01L29/47H01L21/20
    • H01L29/8725H01L29/66143
    • A mesa edge shielding trench Schottky rectifier includes a semiconductor substrate; an epitaxial layer grown on the first surface of the semiconductor substrate; a plurality of trenches spaced from each other and extended into the epitaxial layer, wherein an epitaxial region between two adjacent trenches forms the silicon mesa; a polysilicon region, having a T-shape, is separated from an inner wall of each of the trenches and a top surface of the epitaxial layer by an oxide layer, wherein a width of the top surface of the polysilicon region is bigger than an open size of each of the trenches; an anode electrode, deposited on an entire structure, forming an ohmic contact on the top surface of the polysilicon region and a Schottky contact on an exposed surface of the epitaxial layer; and a cathode electrode, deposited on the second surface of the semiconductor substrate, forming an ohmic contact thereon.
    • 台面边缘屏蔽沟槽肖特基整流器包括半导体衬底; 在半导体衬底的第一表面上生长的外延层; 多个沟槽彼此间隔开并延伸到外延层中,其中两个相邻沟槽之间的外延区域形成硅台面; 具有T形的多晶硅区域通过氧化物层与每个沟槽的内壁和外延层的顶表面分离,其中多晶硅区域的顶表面的宽度大于开放的 每个沟槽的大小; 沉积在整个结构上的阳极,在多晶硅区域的顶表面上形成欧姆接触,在外延层的暴露表面上形成肖特基接触; 和沉积在半导体衬底的第二表面上的阴极,在其上形成欧姆接触。