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21. 发明授权

US07158423B2 Semiconductor memory device and array internal power voltage generating method thereof 有权
标题翻译：半导体存储器件及其阵列内部电源电压产生方法
公开(公告)号：US07158423B2
公开(公告)日：2007-01-02
申请号：US11158206
申请日：2005-06-20
申请人： Eunsung Seo
发明人： Eunsung Seo
IPC分类号： G11C5/04
CPC分类号： G11C5/14 , G11C11/4074
摘要： Method and apparatus for use with internal array voltage generators in semiconductor memory devices are disclosed. In one described embodiment, an overdriving level control circuit is used to generate an overdriving control signal for an internal array voltage generator driver, just prior to a sensing operation. The overdriving level control circuit uses a cell modeling circuit to estimate, just prior to the sensing operation, a current requirement for the sensing operation, and an amplifier to generate the overdriving control signal in response to the estimated current requirement. Such a design allows the amount of overdrive signal to track process, voltage, and temperature changes, for example, to provide an accurate overdrive that allows the internal array voltage to remain stable. Other embodiments are described and claimed.
摘要翻译：公开了用于半导体存储器件中的内部阵列电压发生器的方法和装置。在一个所描述的实施例中，在传感操作之前，过驱动电平控制电路用于产生用于内部阵列电压发生器驱动器的过驱动控制信号。过驱动电平控制电路使用单元建模电路在感测操作之前估计用于感测操作的电流要求，以及放大器以响应于估计的电流要求来产生过驱动控制信号。这样的设计允许过驱动信号的量跟踪过程，电压和温度变化，例如提供允许内部阵列电压保持稳定的精确过载。描述和要求保护其他实施例。

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