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21. 发明申请

US20100210107A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100210107A1
公开(公告)日：2010-08-19
申请号：US12771494
申请日：2010-04-30
申请人： Kazutoshi Ohmori , Tsuyoshi Tamaru , Naohumi Ohashi , Kiyohiko Sato , Hiroyuki Maruyama
发明人： Kazutoshi Ohmori , Tsuyoshi Tamaru , Naohumi Ohashi , Kiyohiko Sato , Hiroyuki Maruyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76829 , H01L21/02126 , H01L21/0214 , H01L21/02167 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/7681 , H01L21/76832 , H01L21/7684 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.
摘要翻译：提供一种半导体器件及其制造方法，用于提高布线层之间的膜和通孔层之间的膜由具有低介电常数的SiOC膜构成的铜镶嵌线的可靠性的提高。布线层之间的膜，布线层之间的膜和通孔层之间的膜分别由SiOC膜构成，并且阻挡绝缘膜和帽绝缘膜由SiCN膜A和SiC膜的层压膜构成通过这样做，可以减少布线层之间的膜，布线层之间的膜和通孔层之间的膜的漏电流，并且还可以提高布线层之间的膜的粘附性，膜布线层之间的通孔层与阻挡绝缘膜和帽绝缘膜之间的膜。

22. 发明授权

US07460213B2 Alignment apparatus, exposure apparatus, and device manufacturing method using exposure apparatus 失效
标题翻译：对准装置，曝光装置和使用曝光装置的装置制造方法
公开(公告)号：US07460213B2
公开(公告)日：2008-12-02
申请号：US11925026
申请日：2007-10-26
申请人： Hiroyuki Maruyama
发明人： Hiroyuki Maruyama
IPC分类号： G03B27/58
CPC分类号： G03F7/70933 , G03F7/70758 , G03F7/70775 , G03F7/70858
摘要： An alignment apparatus includes driving means having a movable element and a stator, a measurement unit which measures a position of a moving member moved by the driving means using measurement light, and a discharging unit to discharge gas existing in an optical path of the measurement light. The discharging unit is provided to the stator.
摘要翻译：对准装置包括具有可移动元件和定子的驱动装置，测量单元，其测量由驱动装置利用测量光移动的移动构件的位置;以及放电单元，用于排出存在于测量光的光路中的气体。放电单元设置在定子上。

23. 发明申请

US20080056790A1 Sheet conveyance apparatus and image forming apparatus 有权
标题翻译：片材输送装置和图像形成装置
公开(公告)号：US20080056790A1
公开(公告)日：2008-03-06
申请号：US11882923
申请日：2007-08-07
申请人： Hiroyuki Maruyama
发明人： Hiroyuki Maruyama
IPC分类号： G03G15/00
CPC分类号： G03G15/6567 , G03G15/235 , G03G15/6564
摘要： A sheet conveying apparatus which conveys a recording sheet fed from a sheet feeding section toward a transfer position with controlled timing, including: a pair of registration rollers; a pair of loop rollers to form a loop of the recording sheet, the loop rollers being disposed upstream of the registration rollers in a sheet feeding direction; and a movable conveying unit configured such that the registration rollers and the loop rollers move as a unified body when correcting at least a lateral misalignment, which is a misalignment in a vertical direction to the sheet feeding direction, and inclination of the recording sheet.
摘要翻译：一种纸张输送装置，其将从纸张供给部供给到具有受控定时的转印位置的记录纸输送，包括：一对定位辊; 一对环形辊，以形成记录纸的环，所述环形辊在纸张进给方向上设置在所述对位辊的上游; 以及可移动输送单元，其构造成使得当校正至少一个垂直方向与片材进给方向不对准的横向偏移和记录片材的倾斜时，定位辊和环形辊作为统一的主体移动。

24. 发明授权

US07208391B2 Method of manufacturing a semiconductor integrated circuit device that includes forming an isolation trench around active regions and filling the trench with two insulating films 有权
标题翻译：制造半导体集成电路器件的方法包括在有源区周围形成隔离沟槽并用两个绝缘膜填充沟槽
公开(公告)号：US07208391B2
公开(公告)日：2007-04-24
申请号：US11149538
申请日：2005-06-10
申请人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
发明人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
IPC分类号： H01L21/762
CPC分类号： H01L21/76229 , H01L21/02271 , H01L21/02282 , H01L21/3125 , H01L21/31612 , H01L27/0211 , H01L27/105 , H01L27/1052 , H01L27/10814 , H01L27/10844 , H01L27/10894
摘要： A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film. The method may also include the step of forming dummy patters in a relatively large isolation region of isolation regions with relatively different planar dimensions before the first insulating film is deposited.
摘要翻译：一种制造半导体集成电路器件的方法包括以下步骤：在半导体衬底的隔离区域中形成隔离沟槽，通过涂覆方法沉积的第一绝缘膜将隔离沟填充到其深度方向上的预定中间位置，用第二绝缘膜填充绝缘沟槽的剩余深度部分，然后在半导体衬底上形成多个图案，在多个图案之间填充形成沟槽直到预定中间位置的沟槽沟槽深度方向与通过涂覆方法沉积的第三绝缘膜，并且填充第三绝缘膜填充有比第三绝缘膜更难蚀刻的第四绝缘膜的沟槽的剩余部分。该方法还可以包括在第一绝缘膜沉积之前在具有相对不同的平面尺寸的隔离区的相对大的隔离区域中形成伪图案的步骤。

25. 发明授权

US07201016B2 Refrigerant supply apparatus 失效
标题翻译：制冷剂供应装置
公开(公告)号：US07201016B2
公开(公告)日：2007-04-10
申请号：US10776168
申请日：2004-02-12
申请人： Hiroyuki Maruyama
发明人： Hiroyuki Maruyama
IPC分类号： F25B43/04
CPC分类号： H01L21/67109 , G03F7/70758 , G03F7/70858
摘要： A refrigerant supply apparatus for supplying a refrigerant to a cooling target. The apparatus includes a refrigerant supply channel through which pure water as the refrigerant is supplied to the cooling target, an impurity removing unit disposed in an impurity removing channel which is a channel different from the refrigerant supply channel, a sensor which measures a purity of the pure water, and a valve which stops supply of the pure water to the cooling target when the purity of the pure water does not satisfy a predetermined standard.
摘要翻译：一种用于向冷却对象供给制冷剂的制冷剂供给装置。该装置包括制冷剂供给通道，通过该制冷剂供给通道将作为制冷剂的纯水供给到冷却对象，杂质除去单元，设置在不同于制冷剂供给通道的通道的杂质去除通道中，测量纯度的传感器纯水以及当纯水的纯度不满足预定标准时停止向冷却对象供应纯水的阀。

26. 发明申请

US20050239257A1 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device 有权
公开(公告)号：US20050239257A1
公开(公告)日：2005-10-27
申请号：US11149538
申请日：2005-06-10
申请人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
发明人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
IPC分类号： H01L21/76 , G02B17/00 , G02B21/00 , G02B23/00 , H01L21/302 , H01L21/312 , H01L21/316 , H01L21/461 , H01L21/762 , H01L21/8239 , H01L21/8242 , H01L27/02 , H01L27/10 , H01L27/105 , H01L27/108
CPC分类号： H01L21/76229 , H01L21/02271 , H01L21/02282 , H01L21/3125 , H01L21/31612 , H01L27/0211 , H01L27/105 , H01L27/1052 , H01L27/10814 , H01L27/10844 , H01L27/10894
摘要： A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film. The method may also include the step of forming dummy patters in a relatively large isolation region of isolation regions with relatively different planar dimensions before the first insulating film is deposited.

27. 发明授权

US06799834B2 Method for manufacturing an electrostatic actuator 有权
标题翻译：静电致动器的制造方法
公开(公告)号：US06799834B2
公开(公告)日：2004-10-05
申请号：US10215229
申请日：2002-08-08
申请人： Masahiro Fujii , Hiroyuki Maruyama , Kazuhiko Sato , Koji Kitahara , Tomohiro Makigaki , Shigeo Nojima , Taro Takekoshi
发明人： Masahiro Fujii , Hiroyuki Maruyama , Kazuhiko Sato , Koji Kitahara , Tomohiro Makigaki , Shigeo Nojima , Taro Takekoshi
IPC分类号： B41J204
CPC分类号： B41J2/1626 , B41J2/14314 , B41J2/16 , B41J2/1623 , B41J2/164 , B41J2/1642 , B41J2/1646 , B41J2002/14387 , B41J2002/14411 , B41J2202/03 , Y10T29/42
摘要： A method for manufacturing an electrostatic actuator comprises a vibrating plate, an electrode plate facing the vibrating plate, and a vibrating chamber formed between the electrode plate and the vibrating plate, wherein the vibrating plate is displaced by electrostatic force, by applying voltage between the vibrating plate and the electrode plate, the method comprises: a process for forming a pressure compensating chamber communicating with the vibrating chamber; a process for forming a displacement plate at a portion of the pressure compensating chamber, displaceable according to external atmospheric pressure, into a warped form curved so as to protrude in a direction away from the facing inner wall of the pressure compensating chamber; and a process for shutting off and sealing the pressure compensating chamber from the external atmosphere, along with the vibrating chamber.
摘要翻译：一种制造静电致动器的方法包括：振动板，面对振动板的电极板和形成在电极板和振动板之间的振动室，其中振动板通过静电力移动，通过在振动板板和电极板，该方法包括：形成与振动室连通的压力补偿室的工艺; 在所述压力补偿室的能够根据外部大气压力移动的部分处形成位移板的方法，所述变形板弯曲成弯曲形式，以沿远离所述压力补偿室的相对的内壁的方向突出; 以及与振动室一起从外部大气中切断和密封压力补偿室的过程。

28. 发明授权

US06509277B1 Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen 有权
标题翻译：具有由含有硅，氧和氢的聚合物的液体形成的绝缘膜的半导体集成电路器件的制造方法
公开(公告)号：US06509277B1
公开(公告)日：2003-01-21
申请号：US09664381
申请日：2000-09-18
申请人： Masayoshi Saito , Katsuhiko Hotta , Masayoshi Hirasawa , Masayuki Kojima , Hiroyuki Uchiyama , Hiroyuki Maruyama , Takuya Fukuda
发明人： Masayoshi Saito , Katsuhiko Hotta , Masayoshi Hirasawa , Masayuki Kojima , Hiroyuki Uchiyama , Hiroyuki Maruyama , Takuya Fukuda
IPC分类号： H01L21302
CPC分类号： H01L21/3124 , H01L21/02164 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3125 , H01L21/76802 , H01L21/76814 , H01L21/76816 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L27/10814 , H01L27/10894
摘要： An SOG film 16 obtained by heat-treating a polysilazan type SOG film at high temperature of about 800° C. is used as a planarized insulating film to be formed on the gate electrode 9 of a MISFET (Qs, Qn, Qp). A polysilazan SOG film 57 not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers (54, 55, 56, 62, 63).
摘要翻译：使用通过在约800℃的高温下热处理聚硅氮烷型SOG膜获得的SOG膜16作为形成在MISFET（Qs，Qn，Qp）的栅极9上的平坦化绝缘膜。不进行这种热处理的聚硅氮烷SOG膜57被用作布置在上部布线层（54,55,56,62,63）之间的层间绝缘膜。

29. 发明授权

US06315907B1 Method for removing toxic shock syndrome toxin-1 in body fluids by adsorption 有权
标题翻译：通过吸附去除体液中毒性休克综合征毒素-1的方法
公开(公告)号：US06315907B1
公开(公告)日：2001-11-13
申请号：US09403281
申请日：1999-10-19
申请人： Fumiyasu Hirai , Eiji Ogino , Hiroyuki Maruyama , Takayuki Sakogawa , Takashi Asahi , Nobutaka Tani
发明人： Fumiyasu Hirai , Eiji Ogino , Hiroyuki Maruyama , Takayuki Sakogawa , Takashi Asahi , Nobutaka Tani
IPC分类号： B01D1500
CPC分类号： B01J20/3242 , A61M1/3679 , B01D15/00 , B01J20/22 , B01J20/28078 , B01J20/3092 , B01J20/3212 , B01J20/3217 , B01J20/3219 , B01J20/3248 , B01J20/3255 , B01J2220/58
摘要： An adsorbent for toxic shock syndrome toxin-1 (TSST-1) comprising a compound which has a log P value of at least 2.50 wherein P is a partition coefficient in an octanol-water system and which is immobilized on a water-insoluble carrier; a method for removing TSST-1 body fluids by adsorption which comprises bringing a body fluid containing TSST-1 into contact with the adsorbent; an adsorber for TSST-1 comprising an adsorbent packed in a container having an inlet and an outlet for a body fluid and a means for preventing the adsorbent from flowing out of the container; and use of the adsorbent. TSST-1 in body fluids can be efficiently removed by the adsorbent.
摘要翻译：用于毒性休克综合征毒素-1（TSST-1）的吸附剂，其包含log P值至少为2.50的化合物，其中P是辛醇 - 水体系中的分配系数并固定在水不溶性载体上; 一种通过吸附除去TSST-1体液的方法，其包括使含有TSST-1的体液与吸附剂接触; 用于TSST-1的吸附器，其包括填充在具有用于体液的入口和出口的容器中的吸附剂和用于防止吸附剂从容器流出的装置; 并使用吸附剂。体液中的TSST-1可以被吸附剂有效地去除。

30. 发明授权

US06190003B1 Electrostatic actuator and manufacturing method therefor 失效
标题翻译：静电致动器及其制造方法
公开(公告)号：US06190003B1
公开(公告)日：2001-02-20
申请号：US08993788
申请日：1997-12-19
申请人： Kazuhiko Sato , Hiroyuki Maruyama , Masahiro Fujii , Tadaaki Hagata , Koji Kitahara , Keiichi Mukaiyama
发明人： Kazuhiko Sato , Hiroyuki Maruyama , Masahiro Fujii , Tadaaki Hagata , Koji Kitahara , Keiichi Mukaiyama
IPC分类号： B41J206
CPC分类号： B41J2/1632 , B41J2/14314 , B41J2/16 , B41J2/1623 , B41J2/1626 , B41J2/1642 , B41J2/1646 , B41J2202/03
摘要： An electrostatic actuator comprising opposing electrode members displaced relatively by an electrostatic force is provided with improved durability so that electrostatic attraction between opposing members does not drop and the opposing electrode members do not stick together. Hydrophobic films of hexamethyldisilazane (HMDS) are formed on a surface of segment electrode and a bottom surface of a diaphragm (common electrode) of an eletrostatic actuator wherein the diaphragm forms a wall of an ink chamber in an ink jet head. HMDS molecules are smaller than PFDA molecules, and a uniform, variation-free hydrophobic film can therefore be formed even when the gap between opposing electrodes is narrow. Durability and film stability of a HMDS hydrophobic film are also high. An electrostatic actuator with high durability and operating stability can thus be achieved.
摘要翻译：提供包括相对于静电力移动的相对电极构件的静电致动器，其具有改善的耐久性，使得相对构件之间的静电吸引力不会下降，并且相对的电极构件不会粘在一起。在分段电极的表面和静电致动器的隔膜（公共电极）的底表面上形成六甲基二硅氮烷（HMDS）的疏水膜，其中隔膜在喷墨头中形成墨室的壁。 HMDS分子小于PFDA分子，因此即使在相对电极之间的间隙窄的情况下也可形成均匀的，无变化的疏水膜。 HMDS疏水膜的耐久性和膜稳定性也很高。因此，可以实现具有高耐久性和操作稳定性的静电致动器。

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