会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 22. 发明授权
    • VCSEL with an intergrated heat sink and method of making
    • 具有集成散热器的VCSEL和制造方法
    • US5482891A
    • 1996-01-09
    • US407062
    • 1995-03-17
    • Chan-Long ShiehJohn LungoMichael S. Lebby
    • Chan-Long ShiehJohn LungoMichael S. Lebby
    • H01S5/024H01S5/183H01L21/20
    • H01S5/18344H01S2301/176H01S5/02476Y10S148/095
    • A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact region (111) is provided. A mesa (131) with a surface (133) and a trench (136) is formed. A first dielectric layer (122) is formed overlying substrate (102) and covering a portion of trench (136). A seed layer (126) having a pattern is formed, with the pattern of seed layer (126) having an opening on a portion of mesa (131). A metal is selectively plated on seed layer (126), thereby generating a layer (304) on seed layer (126) for removal of heat of VCSEL (101).
    • 具有表面(103)的基板(102)具有分布布拉格反射器(106)的第一叠层,第一包层区域(107),有源区域(108),第二包层区域(109) 分布式布拉格反射器(110)和接触区域(111)。 形成具有表面(133)和沟槽(136)的台面(131)。 覆盖衬底(102)并覆盖沟槽(136)的一部分的第一介电层(122)形成。 形成具有图案的种子层(126),种子层(126)的图案在台面(131)的一部分上具有开口。 金属被选择性地电镀在种子层(126)上,由此在种子层(126)上产生用于去除VCSEL(101)的热量的层(304)。
    • 24. 发明授权
    • Laminated polymer optical waveguide interface and method of making same
    • 层压聚合物光波导接口及其制作方法
    • US5125054A
    • 1992-06-23
    • US736969
    • 1991-07-25
    • Donald E. AckleyChristopher K. Y. ChunMichael S. Lebby
    • Donald E. AckleyChristopher K. Y. ChunMichael S. Lebby
    • G02B6/30G02B6/38G02B6/42
    • G02B6/30G02B6/3817G02B6/42G02B6/421G02B6/4214
    • An interface between a laminated polymer optical waveguide (15) and an electronic device (39). The interface does not degrade the desirable properties of the optical waveguide (15), is simple, is low cost, and is compatible with integrated circuit technology as well as optical and electrical connectors (41,42,43,46). The interface includes at least one vertical cavity surface emitting laser or photosensitive diode (11,37) mounted above the surface of the optical waveguide (15). A mirror (21) positioned at an angle with respect to the optical waveguide (15) serves to reflect light between either the vertical cavity surface emitting laser or photosensitive diode (11,37) and the optical waveguide (15). At least one microstrip line (16) couples electrical signals between the vertical cavity surface emitting laser (11,37) and the electronic device (39).
    • 叠层聚合物光波导(15)和电子装置(39)之间的界面。 该接口不会降低光波导(15)的理想特性,简单,成本低,并且与集成电路技术以及光电连接器(41,42,43,46)兼容。 界面包括安装在光波导(15)的表面上方的至少一个垂直腔表面发射激光器或光敏二极管(11,37)。 相对于光波导(15)定位成一定角度的反射镜(21)用于在垂直空腔表面发射激光器或感光二极管(11,37)和光波导(15)之间反射光。 至少一条微带线(16)在垂直腔表面发射激光器(11,37)和电子器件(39)之间耦合电信号。
    • 26. 发明授权
    • Broad spectrum surface-emitting led
    • 广谱表面发射LED
    • US5563900A
    • 1996-10-08
    • US287820
    • 1994-08-09
    • Donald E. AckleyPaige M. HolmMichael S. Lebby
    • Donald E. AckleyPaige M. HolmMichael S. Lebby
    • H01S5/183H01S5/40H01S3/18H01S3/103
    • H01S5/18397H01S5/1057H01S5/18308H01S5/18358H01S5/18361H01S5/2063
    • A surface emitting light emitting device with a semiconducting substrate, a semiconducting mirror stack positioned on the substrate surface, a spacer layer positioned on the mirror stack, an active region positioned on the spacer layer, a second spacer layer positioned on the active region, a second semiconducting mirror stack positioned on the second spacer layer, and a top contact layer positioned in contact with the second semiconducting mirror stack. The active region includes multiple quantum wells each having a different transition wavelength and positioned on the spacer layer with the quantum well possessing the longest transition wavelength located closest to the spacer layer and additional quantum wells of the multiple quantum wells positioned in order of decreasing transition wavelength so that the sum of the emission from all of the quantum wells results in a broad and uniform output emission spectrum.
    • 具有半导体衬底的表面发射发光器件,位于衬底表面上的半导体反射镜叠层,位于反射镜叠层上的间隔层,位于间隔层上的有源区,位于有源区上的第二间隔层, 位于第二间隔层上的第二半导体反射镜叠层和与第二半导体反射镜叠层定位接触的顶部接触层。 有源区包括多个量子阱,每个量子阱具有不同的跃迁波长并且位于间隔层上,其中量子阱具有位于最靠近间隔层的最长过渡波长,并且多个量子阱的额外量子阱按照降低的跃迁波长 使得来自所有量子阱的发射的总和导致宽而均匀的输出发射光谱。