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21. 发明申请

US20110186853A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT 有权
标题翻译：薄膜晶体管，其制造方法和显示单元
公开(公告)号：US20110186853A1
公开(公告)日：2011-08-04
申请号：US13014363
申请日：2011-01-26
申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
发明人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L29/78606 , H01L29/12 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

22. 发明申请

US20110140116A1 THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：薄膜晶体管，显示器件和电子器件
公开(公告)号：US20110140116A1
公开(公告)日：2011-06-16
申请号：US12951683
申请日：2010-11-22
申请人： Narihiro Morosawa , Eri Fukumoto , Yasuhiro Terai
发明人： Narihiro Morosawa , Eri Fukumoto , Yasuhiro Terai
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78606
摘要： The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.
摘要翻译：本发明提供一种使用氧化物半导体作为沟道的薄膜晶体管，将阈值电压控制在正方向，并实现可靠性的提高。薄膜晶体管包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的氧化物半导体层; 设置在氧化物半导体层的栅电极侧的作为栅极绝缘膜的第一绝缘膜; 以及设置在所述氧化物半导体层的所述一对源极/漏极侧的第二绝缘膜。第一绝缘膜和/或第二绝缘膜含有/含有氟。

23. 发明申请

US20100200843A1 THIN FILM TRANSISTOR AND DISPLAY UNIT 有权
标题翻译：薄膜晶体管和显示单元
公开(公告)号：US20100200843A1
公开(公告)日：2010-08-12
申请号：US12696270
申请日：2010-01-29
申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
发明人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
IPC分类号： H01L51/52 , H01L29/786
CPC分类号： H01L27/3262 , H01L27/1225 , H01L29/41733 , H01L29/458 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2251/5315
摘要： A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
摘要翻译：能够将氧容易地供给到氧化物半导体层的薄膜晶体管和良好的晶体管特性能够被恢复，并且提供包括该氧化物半导体层的显示单元。薄膜晶体管依次包括栅电极，栅极绝缘膜，包括沟道区的氧化物半导体层以及覆盖沟道区A的沟道保护层A源电极和漏极形成在氧化物半导体层上位于沟道保护层的两侧，并且源电极和漏电极中的至少一个具有露出氧化物半导体层的孔。

24. 发明申请

US20120249915A1 DISPLAY DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20120249915A1
公开(公告)日：2012-10-04
申请号：US13415625
申请日：2012-03-08
申请人： Narihiro Morosawa
发明人： Narihiro Morosawa
IPC分类号： G02F1/136 , H01L33/08
CPC分类号： H01L27/1255 , G02F1/136213 , H01L27/1225 , H01L27/3265
摘要： A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal. The display element, the transistor, and the holding capacitance element are provided on the substrate. The holding capacitance element includes a first semiconductor layer including an oxide semiconductor, a first conductive film provided on the first semiconductor layer, a first insulating film provided between the first semiconductor layer and the first conductive film, and a recess formed by removing part or all in thickness of the first conductive film and the first insulating film in a selective region on the first semiconductor layer.
摘要翻译：显示装置包括基板，显示元件，作为显示元件的驱动元件的晶体管，以及保持与视频信号对应的电荷的保持电容元件。显示元件，晶体管和保持电容元件设置在基板上。保持电容元件包括：第一半导体层，包括氧化物半导体，设置在第一半导体层上的第一导电膜，设置在第一半导体层和第一导电膜之间的第一绝缘膜，以及通过去除部分或全部形成的凹部在第一半导体层上的选择区域中的第一导电膜和第一绝缘膜的厚度。

25. 发明申请

US20120043548A1 THIN FILM TRANSISTOR AND DISPLAY UNIT 有权
标题翻译：薄膜晶体管和显示单元
公开(公告)号：US20120043548A1
公开(公告)日：2012-02-23
申请号：US13287689
申请日：2011-11-02
申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
发明人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
IPC分类号： H01L29/786
CPC分类号： H01L27/3262 , H01L27/1225 , H01L29/41733 , H01L29/458 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2251/5315
摘要： A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
摘要翻译：能够使能够容易地供给氧化物半导体层的氧和良好的晶体管特性的薄膜晶体管能够恢复，并且包括该薄膜晶体管的显示单元。薄膜晶体管在基板上顺序地包括栅电极，栅极绝缘膜，包括沟道区的氧化物半导体层，以及覆盖沟道区A的沟道保护层。源极和漏电极形成在氧化物位于沟道保护层两侧的半导体层，源电极和漏电极中的至少一个具有露出氧化物半导体层的孔。

26. 发明申请

US20110248270A1 THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC UNIT 有权
标题翻译：薄膜晶体管，显示器件和电子单元
公开(公告)号：US20110248270A1
公开(公告)日：2011-10-13
申请号：US13078543
申请日：2011-04-01
申请人： Eri Fukumoto , Yasuhiro Terai , Narihiro Morosawa
发明人： Eri Fukumoto , Yasuhiro Terai , Narihiro Morosawa
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L29/517
摘要： A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.
摘要翻译：提供了使用用于沟道的氧化物半导体的薄膜晶体管，其可以被控制使得阈值电压为正并且可以提高可靠性。薄膜晶体管包括栅极电极，一对源极/漏极电极，形成沟道的氧化物半导体层，设置在栅极电极和一对源极/漏极电极之间，第一绝缘膜作为栅极绝缘膜设置在所述氧化物半导体层位于所述栅电极附近的一侧，所述第二绝缘膜设置在所述一对源/漏电极附近的所述氧化物半导体层上。第一绝缘膜和第二绝缘膜中的一个或两个包括膜密度为2.70g / cm 3以上且小于2.79g / cm 3的氧化铝。

27. 发明申请

US20110240998A1 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，其制造方法和显示器件
公开(公告)号：US20110240998A1
公开(公告)日：2011-10-06
申请号：US13053997
申请日：2011-03-22
申请人： Narihiro Morosawa , Yoshihiro Oshima
发明人： Narihiro Morosawa , Yoshihiro Oshima
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/66969 , H01L29/78618
摘要： A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括氧化物半导体层，其包括源区域，漏极区域和沟道区域，其中源极区域和漏极区域的一部分的氧浓度小于沟道区域。还提供了一种薄膜晶体管，其包括包括源极区，漏极区和沟道区的氧化物半导体层，其中源极和漏极区的一部分包括选自由铝，硼，镓铟，钛，硅，锗，锡，铅及其组合。

28. 发明申请

US20100193784A1 THIN-FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US20100193784A1
公开(公告)日：2010-08-05
申请号：US12694354
申请日：2010-01-27
申请人： Narihiro Morosawa , Takashige Fujimori
发明人： Narihiro Morosawa , Takashige Fujimori
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/3244 , H01L2251/5315
摘要： A thin-film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film. An upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.
摘要翻译：薄膜晶体管包括：形成在基板上的栅电极; 形成与所述栅电极对应的沟道区域的氧化物半导体层; 形成在所述基板和所述栅极上的第一栅极绝缘膜，并且包括氮化硅膜; 选择性地形成为与所述氧化物半导体层接触的第二栅极绝缘膜，所述第二栅极绝缘膜在与所述氧化物半导体层对应的所述第一栅极绝缘膜上的区域中，并且包括氧化硅膜和氧氮化硅膜之一; 源极/漏极; 和保护膜。氧化物半导体层的上表面和侧表面以及第二栅极绝缘膜的侧表面在第一栅极绝缘膜上被源/漏电极和保护膜覆盖。

29. 发明授权

US08748882B2 Thin film transistor, electronic device, display device, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，电子器件，显示器件以及制造薄膜晶体管的方法
公开(公告)号：US08748882B2
公开(公告)日：2014-06-10
申请号：US13014363
申请日：2011-01-26
申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
发明人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai , Narihiro Morosawa
IPC分类号： H01L29/18 , H01L29/12
CPC分类号： H01L29/78606 , H01L29/12 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

30. 发明授权

US08461594B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08461594B2
公开(公告)日：2013-06-11
申请号：US13122307
申请日：2009-10-07
申请人： Narihiro Morosawa , Yasuhiro Terai , Toshiaki Arai
发明人： Narihiro Morosawa , Yasuhiro Terai , Toshiaki Arai
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3211 , H01L27/3244 , H01L27/3262
摘要： Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.
摘要翻译：提供一种薄膜晶体管，其能够抑制氧等氧化物半导体层的解吸，并减少成膜时间，以及具有该显示装置的显示装置。栅极绝缘膜22，沟道保护层24和钝化膜26均包括由氧化铝制成的第一层31和由包含硅（Si）的绝缘材料制成的第二层32。第一层31和第二层32彼此重叠设置，使得第一层31位于氧化物半导体层23的侧面。氧化物半导体层23由两个由氧化铝制成的第一层31夹在两侧，从而抑制氧等的解吸，并且稳定TFT20的电特性。此外，由于第二层32由包含硅（Si）的绝缘材料制成，因此可以减少用于成膜的时间，比较具有由氧化铝制成的单层。

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