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21. 发明授权

US07693354B2 Salicide structures for heat-influenced semiconductor applications 有权
标题翻译：热影响半导体应用的杀菌剂结构
公开(公告)号：US07693354B2
公开(公告)日：2010-04-06
申请号：US12201791
申请日：2008-08-29
申请人： Daniel N. Carothers
发明人： Daniel N. Carothers
IPC分类号： G02F1/01 , G02B6/12
CPC分类号： G02B6/136 , G02B6/122 , G02B2006/12061 , G02B2006/12097 , G02B2006/12135 , G02B2006/12142 , G02F1/0147 , G02F1/025 , G02F1/2257
摘要： A salicide heater structure for use in thermo-optic and other heat-influenced semiconductor devices is disclosed. In one example embodiment, a system is provided that includes a silicon substrate, and a salicide heating element formed on the substrate, for delivering heat radiation to a heat-influenced semiconductor device. Another example embodiment is a salicide semiconductor system that includes a silicon substrate and a salicide structure formed on the substrate, wherein the salicide structure is for delivering heat radiation to a heat-influenced semiconductor device.
摘要翻译：公开了一种用于热光和其他受热影响的半导体器件的自对准硅加热器结构。在一个示例性实施例中，提供了一种系统，其包括硅衬底和形成在衬底上的用于将热辐射传递到受热影响的半导体器件的硅化物加热元件。另一个示例性实施例是一种自对准半导体系统，其包括硅衬底和形成在衬底上的自对准硅化物结构，其中所述自对准硅结构用于将热辐射传递到受热影响的半导体器件。

22. 发明申请

US20100055919A1 INTEGRATION CMOS COMPATIBLE OF MICRO/NANO OPTICAL GAIN MATERIALS 失效
标题翻译：集成CMOS兼容的微/纳米光学增益材料
公开(公告)号：US20100055919A1
公开(公告)日：2010-03-04
申请号：US12201618
申请日：2008-08-29
申请人： Daniel N. Carothers
发明人： Daniel N. Carothers
IPC分类号： H01L21/302 , B32B15/04
CPC分类号： H01S5/026 , G02B6/13 , G02B2006/12078 , G02B2006/12097 , H01L21/8258 , Y10T428/31678
摘要： A method is provided for the integration of an optical gain material into a Complementary metal oxide semiconductor device, the method comprising the steps of: configuring a workpiece from a silicon wafer upon which is disposed an InP wafer bearing an epitaxy layer; mechanically removing the InP substrate; etching the InP remaining on epitaxy layer with hydrochloric acid; depositing at least one Oxide pad on revealed the epitaxy layer; using the Oxide pad as a mask during a first pattern etch removing the epitaxy to an N level; etching with a patterned inductively coupled plasma (ICP) technique; isolating the device on the substrate with additional pattern etching patterning contacts, appling the contacts.
摘要翻译：提供了一种用于将光学增益材料集成到互补金属氧化物半导体器件中的方法，所述方法包括以下步骤：从硅晶片配置工件，其上设置有承载外延层的InP晶片; 机械去除InP基板; 用盐酸蚀刻留在外延层上的InP; 沉积至少一个氧化物垫显露外延层; 在第一图案蚀刻期间使用氧化物垫作为掩模，将外延移除到N电平; 用图案化电感耦合等离子体（ICP）技术蚀刻; 用附加的图案蚀刻图形化触点隔离衬底上的器件，施加触点。

23. 发明申请

US20100328673A1 HIGH-INDEX CONTRAST WAVEGUIDE OPTICAL GYROSCOPE HAVING SEGMENTED PATHS 有权
标题翻译：高分辨率对比波形光学眼镜
公开(公告)号：US20100328673A1
公开(公告)日：2010-12-30
申请号：US12525965
申请日：2008-08-29
申请人： Daniel N. Carothers , Jefferson E. Odhner
发明人： Daniel N. Carothers , Jefferson E. Odhner
IPC分类号： G01C19/64
CPC分类号： G01C19/72
摘要： A waveguide optical gyroscope is disclosed. The waveguide optical gyroscope includes a laser, two detectors, a set of couplers and a set of waveguides. The laser generates a light beam. A first waveguide guides the light beam to travel in a first direction, and a second waveguide guides the light beam to travel in a second direction. The first and second waveguides are coupled to several ring waveguides via the couplers. The first detector detects the arrival of the light beam traveling from the first waveguide, and the second detector detects the arrival of the light beam traveling from the second waveguide.
摘要翻译：公开了一种波导光学陀螺仪。波导光学陀螺仪包括激光器，两个检测器，一组耦合器和一组波导。激光产生光束。第一波导引导光束沿第一方向行进，第二波导引导光束沿第二方向行进。第一和第二波导通过耦合器耦合到多个环形波导。第一检测器检测从第一波导传播的光束的到达，并且第二检测器检测从第二波导传播的光束的到达。

24. 发明授权

US07848601B2 Integrated optical latch 有权
标题翻译：集成光锁存器
公开(公告)号：US07848601B2
公开(公告)日：2010-12-07
申请号：US12718584
申请日：2010-03-05
申请人： Daniel N. Carothers
发明人： Daniel N. Carothers
IPC分类号： G02F1/035 , G02F1/295 , G02B6/42
CPC分类号： G02F1/3519 , G02F1/0147 , G02F1/225 , G02F2001/211 , G02F2203/15
摘要： Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.
摘要翻译：公开了用于光交换和数据控制的技术，而没有电子切换速度的相互作用。在一个示例性实施例中，提供了公共空腔光锁存器，其可以将光学状态保持延长的时间段，并且其操作被光学地控制。光学相位控制允许使用入射光学信号在两个公共光学腔之间采用光学模式切换，以及空腔操纵其中的相位以锁定在一个或另一个结构中的方式，从而形成光学锁存器。光锁存器以集成的方式实现，例如在CMOS环境中。

25. 发明申请

US20100157402A1 Integrated Optical Latch 有权
标题翻译：集成光锁
公开(公告)号：US20100157402A1
公开(公告)日：2010-06-24
申请号：US12718584
申请日：2010-03-05
申请人： Daniel N. Carothers
发明人： Daniel N. Carothers
IPC分类号： G02F3/00
CPC分类号： G02F1/3519 , G02F1/0147 , G02F1/225 , G02F2001/211 , G02F2203/15
摘要： Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.
摘要翻译：公开了用于光交换和数据控制的技术，而没有电子切换速度的相互作用。在一个示例性实施例中，提供了公共空腔光锁存器，其可以将光学状态保持延长的时间段，并且其操作被光学地控制。光学相位控制允许使用入射光学信号在两个公共光学腔之间采用光学模式切换，以及空腔操纵其中的相位以锁定在一个或另一个结构中的方式，从而形成光学锁存器。光锁存器以集成的方式实现，例如在CMOS环境中。

26. 发明授权

US07715663B2 Integrated optical latch 有权
公开(公告)号：US07715663B2
公开(公告)日：2010-05-11
申请号：US12201784
申请日：2008-08-29
申请人： Daniel N. Carothers
发明人： Daniel N. Carothers
IPC分类号： G02F1/035 , G02F1/295 , G02B6/42
CPC分类号： G02F1/3519 , G02F1/0147 , G02F1/225 , G02F2001/211 , G02F2203/15
摘要： Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.

27. 发明申请

US20100140587A1 High-Injection Heterojunction Bipolar Transistor 审中-公开
标题翻译：高注入异质结双极晶体管
公开(公告)号：US20100140587A1
公开(公告)日：2010-06-10
申请号：US12523807
申请日：2008-10-16
申请人： Daniel N. Carothers , Andrew T.S. Pomerene
发明人： Daniel N. Carothers , Andrew T.S. Pomerene
IPC分类号： H01L29/737 , H01L31/18 , H01L21/331
CPC分类号： H01L31/105 , H01L29/66242 , H01L29/7378 , H01L31/18
摘要： A method for manufacturing high-injection heterojunction bipolar transistor capable of being used as a photonic device is disclosed. A sub-collector layer is formed on a substrate. A collector layer is then deposited on top of the sub-collector layer. After a base layer has been deposited on top of the collector layer, a quantum well layer is deposited on top of the base layer. An emitter is subsequently formed on top of the quantum well layer.
摘要翻译：公开了一种用于制造能够用作光子器件的高注入异质结双极晶体管的方法。在基板上形成副集电极层。然后将集电极层沉积在子集电极层的顶部。在基底层沉积在集电极层顶部之后，量子阱层沉积在基底层的顶部上。随后在量子阱层的顶部形成发射极。

28. 发明申请

US20100054653A1 SALICIDE STRUCTURES FOR HEAT-INFLUENCED SEMICONDUCTOR APPLICATIONS 有权
标题翻译：用于受热影响的半导体应用的杀真菌结构
公开(公告)号：US20100054653A1
公开(公告)日：2010-03-04
申请号：US12201791
申请日：2008-08-29
申请人： Daniel N. Carothers
发明人： Daniel N. Carothers
IPC分类号： G02F1/015 , H01L29/00 , H01L21/44
CPC分类号： G02B6/136 , G02B6/122 , G02B2006/12061 , G02B2006/12097 , G02B2006/12135 , G02B2006/12142 , G02F1/0147 , G02F1/025 , G02F1/2257
摘要： A salicide heater structure for use in thermo-optic and other heat-influenced semiconductor devices is disclosed. In one example embodiment, a system is provided that includes a silicon substrate, and a salicide heating element formed on the substrate, for delivering heat radiation to a heat-influenced semiconductor device. Another example embodiment is a salicide semiconductor system that includes a silicon substrate and a salicide structure formed on the substrate, wherein the salicide structure is for delivering heat radiation to a heat-influenced semiconductor device.
摘要翻译：公开了一种用于热光和其他受热影响的半导体器件的自对准硅加热器结构。在一个示例性实施例中，提供了一种系统，其包括硅衬底和形成在衬底上的用于将热辐射传递到受热影响的半导体器件的硅化物加热元件。另一个示例性实施例是一种自对准半导体系统，其包括硅衬底和形成在衬底上的自对准硅化物结构，其中所述自对准硅结构用于将热辐射传递到受热影响的半导体器件。

29. 发明申请

US20100053712A1 INTEGRATED OPTICAL LATCH 有权
标题翻译：集成光学锁
公开(公告)号：US20100053712A1
公开(公告)日：2010-03-04
申请号：US12201784
申请日：2008-08-29
申请人： Daniel N. Carothers
发明人： Daniel N. Carothers
IPC分类号： G02F3/00 , G02B6/12
CPC分类号： G02F1/3519 , G02F1/0147 , G02F1/225 , G02F2001/211 , G02F2203/15
摘要： Techniques are disclosed for optical switching and data control, without the interaction of electronic switching speeds. In one example embodiment, a common cavity optical latch is provided that that can hold an optical state for an extended period of time, and the operation of which is controlled optically. Optical phase control allows optical modal switching to be employed between two common optical cavities, using incident optical signals and the way in which the cavities manipulate the phase within them to lock in one or the other configuration, thereby forming an optical latch. The optical latch is implemented in an integrated fashion, such as in a CMOS environment.
摘要翻译：公开了用于光交换和数据控制的技术，而没有电子切换速度的相互作用。在一个示例性实施例中，提供了公共空腔光锁存器，其可以将光学状态保持延长的时间段，并且其操作被光学地控制。光学相位控制允许使用入射光学信号在两个公共光学腔之间采用光学模式切换，以及空腔操纵其中的相位以锁定在一个或另一个结构中的方式，从而形成光学锁存器。光锁存器以集成的方式实现，例如在CMOS环境中。

30. 发明授权

US08288290B2 Integration CMOS compatible of micro/nano optical gain materials 失效
标题翻译：集成CMOS兼容的微/纳米光学增益材料
公开(公告)号：US08288290B2
公开(公告)日：2012-10-16
申请号：US12201618
申请日：2008-08-29
申请人： Daniel N. Carothers
发明人： Daniel N. Carothers
IPC分类号： H01L21/302
CPC分类号： H01S5/026 , G02B6/13 , G02B2006/12078 , G02B2006/12097 , H01L21/8258 , Y10T428/31678
摘要： A method is provided for the integration of an optical gain material into a Complementary metal oxide semiconductor device, the method comprising the steps of: configuring a workpiece from a silicon wafer upon which is disposed an InP wafer bearing an epitaxy layer; mechanically removing the InP substrate; etching the InP remaining on epitaxy layer with hydrochloric acid; depositing at least one Oxide pad on revealed the epitaxy layer; using the Oxide pad as a mask during a first pattern etch removing the epitaxy to an N level; etching with a patterned inductively coupled plasma (ICP) technique; isolating the device on the substrate with additional pattern etching patterning contacts, applying the contacts.
摘要翻译：提供了一种用于将光学增益材料集成到互补金属氧化物半导体器件中的方法，所述方法包括以下步骤：从硅晶片配置工件，其上设置有承载外延层的InP晶片; 机械去除InP基板; 用盐酸蚀刻留在外延层上的InP; 沉积至少一个氧化物垫显露外延层; 在第一图案蚀刻期间使用氧化物垫作为掩模，将外延移除到N电平; 用图案化电感耦合等离子体（ICP）技术进行蚀刻; 用附加图案蚀刻图案化触点隔离衬底上的器件，施加触点。

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