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21. 发明申请

US20120311402A1 DATA READING METHOD, MEMORY CONTROLLER, AND MEMORY STORAGE DEVICE 有权
标题翻译：数据读取方法，存储器控制器和存储器存储器件
公开(公告)号：US20120311402A1
公开(公告)日：2012-12-06
申请号：US13190487
申请日：2011-07-26
申请人： Chien-Fu Tseng , Kuo-Hsin Lai
发明人： Chien-Fu Tseng , Kuo-Hsin Lai
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： G06F11/1048 , G11C29/028 , G11C29/50004 , G11C2029/0401 , G11C2029/0409 , G11C2029/0411 , H03M13/152 , H03M13/2906 , H03M13/612
摘要： A data reading method adapted to a rewritable non-volatility memory module having physical blocks is provided, wherein each physical block has a plurality of physical pages. In the data reading method, each physical page is partitioned into bit data areas, where at least one of the bit data areas has a data length different from that of the other bit data areas. Data is written into the bit data areas. Data in each bit data area is corresponding to an ECC frame. The data is read from the bit data areas. Because the at least one of bit data areas has a relatively short data length, the error correction capability is improved and the data can be correctly read. An error bit information is obtained according to the read data. A log likelihood ratio (LLR) lookup table or a threshold voltage is adjusted according to the error bit information.
摘要翻译：提供了一种适用于具有物理块的可重写非易失性存储器模块的数据读取方法，其中每个物理块具有多个物理页面。在数据读取方法中，每个物理页面被划分为位数据区域，其中至少一个位数据区域的数据长度与其他位数据区域的数据长度不同。数据写入位数据区。每个位数据区域中的数据对应于ECC帧。从位数据区读取数据。因为位数据区域中的至少一个具有相对较短的数据长度，所以改进了纠错能力并且可以正确地读取数据。根据读取的数据获得错误位信息。根据误差位信息调整对数似然比（LLR）查找表或阈值电压。

22. 发明申请

US20110281136A1 COPPER-MANGANESE BONDING STRUCTURE FOR ELECTRONIC PACKAGES 审中-公开
标题翻译：电子封装的铜 - 锰焊接结构
公开(公告)号：US20110281136A1
公开(公告)日：2011-11-17
申请号：US12780444
申请日：2010-05-14
申请人： Jenq-Gong Duh , Chien-Fu Tseng
发明人： Jenq-Gong Duh , Chien-Fu Tseng
IPC分类号： B32B15/20
CPC分类号： C22C13/00 , B23K35/302 , C22C9/05 , H01L21/563 , H01L23/49811 , H01L23/49866 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0346 , H01L2224/0401 , H01L2224/05147 , H01L2224/05149 , H01L2224/05573 , H01L2224/05649 , H01L2224/10145 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/16503 , H01L2224/73204 , H01L2224/81815 , H01L2224/83102 , H01L2924/00013 , H01L2924/01029 , H01L2924/01327 , H01L2924/3651 , Y10T428/12903 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A copper-manganese bonding structure adopted for use on Under Bump Metallurgy (UBM) at solder joints in packaging technology includes an electronic element, at least one soldering material and at least one manganese bonding material. The electronic element has at least one copper conductive portion. The soldering material corresponds to the copper conductive portion. The manganese bonding material is arranged in the copper conductive portion and the soldering material to form bonding between them. The manganese bonding material can reduce the generation of a brittle intermetallic compound Cu3Sn and suppress the generation of voids. The copper conductive portion is not consumed by the generation of the intermetallic compound. Thus the total structure can be protected and improved.
摘要翻译：在包装技术的焊接接头处采用的用于Under Bump Metallurgy（UBM）的铜锰结合结构包括电子元件，至少一种焊接材料和至少一种锰粘接材料。电子元件具有至少一个铜导电部分。焊接材料对应于铜导电部分。锰接合材料布置在铜导电部分和焊接材料中以形成它们之间的结合。锰键合材料可以减少脆性金属间化合物Cu 3 Sn的产生并抑制空隙的产生。铜导电部分不会被金属间化合物的产生所消耗。因此，可以保护和改进总体结构。

23. 发明申请

US20110258496A1 DATA READING METHOD, MEMORY STORAGE APPARATUS AND MEMORY CONTROLLER THEREOF 有权
标题翻译：数据读取方法，存储器存储器及其存储器控制器
公开(公告)号：US20110258496A1
公开(公告)日：2011-10-20
申请号：US13108004
申请日：2011-05-16
申请人： Chien-Fu Tseng , Kuo-Hsin Lai
发明人： Chien-Fu Tseng , Kuo-Hsin Lai
IPC分类号： G06F11/00 , G06F11/07
CPC分类号： G11C11/5642 , G11C16/10 , G11C16/3422 , G11C16/349 , G11C2029/0411
摘要： A data reading method for a writable non-volatile memory module having physical pages is provided. The method includes grouping the physical pages into a plurality of physical page groups. The method also includes reading first data from a physical page of a first physical page group by applying a first threshold voltage set. The method still includes, when the first data can be corrected by an error checking and correcting circuit and an error bit number corresponding to the first data is not smaller than an error bit number threshold, calculating compensation voltages for the first threshold voltage set. The method further includes adjusting the first threshold voltage set by the compensation voltages and applying the adjusted first threshold voltage set to read data from the physical pages of the first physical page group. Accordingly, data stored in the rewritable non-volatile memory module can be correctly read.
摘要翻译：提供了一种具有物理页面的可写非易失性存储器模块的数据读取方法。该方法包括将物理页面分组成多个物理页面组。该方法还包括通过应用第一阈值电压集从第一物理页组的物理页读取第一数据。该方法还包括当通过错误检查和校正电路校正第一数据并且与第一数据相对应的错误位数不小于错误位数阈值时，计算第一阈值电压组的补偿电压。该方法还包括调整由补偿电压设置的第一阈值电压，并将调整后的第一阈值电压设置为从第一物理页组的物理页读取数据。因此，可以正确地读取存储在可重写非易失性存储器模块中的数据。

24. 发明授权

US07724636B2 Asymmetry compensator for partial response maximum likelihood (PRML) decoder 有权
标题翻译：用于部分响应最大似然（PRML）解码器的不对称补偿器
公开(公告)号：US07724636B2
公开(公告)日：2010-05-25
申请号：US11180691
申请日：2005-07-14
申请人： Chien-Fu Tseng , Yung-Chi Yang
发明人： Chien-Fu Tseng , Yung-Chi Yang
IPC分类号： G11B7/00
CPC分类号： H04L25/061 , G11B20/10009 , G11B20/10027 , G11B20/10055
摘要： An asymmetry compensator for a partial response maximum likelihood (PRML) decoder, which is utilized to remove and eliminate the asymmetric component of the regenerating signal read from the optical recording medium, thereby effectively solving the problem of the asymmetry of the optical disk regenerating signal. The compensator includes an offset controller and a gain controller. The offset controller determines the central level of the regenerating signal thus to adjust the offset of the regenerating signal while the gain controller is arranged to adjust the gain of the regenerating signal.
摘要翻译：用于部分响应最大似然（PRML）解码器的不对称补偿器，其用于去除和消除从光记录介质读取的再生信号的不对称分量，从而有效地解决了光盘再生信号的不对称性问题。补偿器包括偏移控制器和增益控制器。偏移控制器确定再生信号的中心电平，从而调整再生信号的偏移，同时增益控制器被布置成调整再生信号的增益。

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