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21. 发明授权

US06784001B2 Automated variation of stepper exposure dose based upon across wafer variations in device characteristics, and system for accomplishing same 失效
标题翻译：基于设备特性的晶片变化的步进曝光剂量的自动变化，以及用于实现其的系统
公开(公告)号：US06784001B2
公开(公告)日：2004-08-31
申请号：US10094117
申请日：2002-03-08
申请人： Joyce S. Oey Hewett , Anthony J. Toprac
发明人： Joyce S. Oey Hewett , Anthony J. Toprac
IPC分类号： H01L2166
CPC分类号： G03F7/70483 , H01L22/20
摘要： A novel method and system for fabricating integrated circuit devices is disclosed herein. In one embodiment, the method comprises determining at least one electrical performance characteristic of a plurality of semiconductor devices formed above at least one semiconducting substrate, providing the determined electrical performance characteristics to a controller that determines, based upon the determined electrical characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on at least one subsequently processed substrate, and performing the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates. The system comprises a metrology tool for determining an electrical performance characteristic of a plurality of semiconductor devices formed above at least one substrate, a controller that determines, based upon the determined electrical performance characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on subsequently processed substrates, and a stepper tool that performs the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates.
摘要翻译：本文公开了一种用于制造集成电路器件的新颖方法和系统。在一个实施例中，该方法包括确定在至少一个半导体衬底上方形成的多个半导体器件的至少一个电性能特性，将确定的电性能特性提供给控制器，该控制器基于确定的电特性来确定跨衬底将对至少一个随后处理的基板进行步进曝光处理的曝光剂量的变化，以及对随后处理的基板上的曝光剂量的跨基板变化进行步进曝光处理。该系统包括用于确定在至少一个衬底上形成的多个半导体器件的电性能特征的计量工具，控制器，其基于确定的电性能特性确定步进曝光的曝光剂量中的跨衬底变化在后续处理的基板上执行的处理以及执行步进曝光处理的步进工具，其包括曝光剂量对随后处理的基板的跨基板变化。

22. 发明授权

US06595830B1 Method of controlling chemical mechanical polishing operations to control erosion of insulating materials 有权
标题翻译：控制化学机械抛光操作以控制绝缘材料侵蚀的方法
公开(公告)号：US06595830B1
公开(公告)日：2003-07-22
申请号：US09817532
申请日：2001-03-26
申请人： Joyce S. Oey Hewett , Gerd Franz Christian Marxsen , Anthony J. Toprac
发明人： Joyce S. Oey Hewett , Gerd Franz Christian Marxsen , Anthony J. Toprac
IPC分类号： B24B5100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , H01L21/3212
摘要： The present invention is directed to a method of polishing wafers on a polishing tool comprised of first, second and third platens. The method comprises providing a wafer having a patterned layer of insulating material, a barrier metal layer, and a metal layer formed above the wafer, performing a first polishing operation on the wafer at the first platen to remove a majority of the metal layer above the barrier metal layer, and performing an endpoint polishing operation on the wafer at the second platen to remove at least some of the metal layer. The method further comprises performing a timed overpolish operation on the wafer at the second platen after the endpoint polishing operation is completed at the second platen, performing a timed polishing operation on the wafer at the third platen to remove at least some of the barrier metal layer, determining an erosion rate of the patterned layer of insulating material, providing the determined erosion rate to a controller that determines a duration of the timed overpolish operations to be performed on at least one subsequently processed wafer at the second platen, and performing the timed overpolish operation on the at least one subsequently processed wafer at the second platen for the duration determined by the controller.
摘要翻译：本发明涉及一种在由第一，第二和第三压板构成的抛光工具上抛光晶片的方法。该方法包括提供具有绝缘材料图案化层，阻挡金属层和形成在晶片上方的金属层的晶片，在第一压板上在晶片上执行第一抛光操作，以去除位于第一压板上方的大部分金属层并且在所述第二压板处对所述晶片执行终点抛光操作以去除所述金属层中的至少一些。该方法还包括在第二压板上完成终点抛光操作之后，在第二压板上对晶片进行定时过多的操作，对第三压板上的晶片进行定时抛光操作，以去除至少一些阻挡金属层确定所述图案化绝缘材料层的侵蚀速率，将所确定的腐蚀速率提供给控制器，所述控制器确定在所述第二压板上对至少一个随后处理过的晶片执行的所述定时过度抛光操作的持续时间，以及执行所述定时过度抛光在由控制器确定的持续时间内，在第二压板上对至少一个随后处理的晶片进行操作。

23. 发明授权

US06365422B1 Automated variation of stepper exposure dose based upon across wafer variations in device characteristics, and system for accomplishing same 有权
标题翻译：基于设备特性的晶片变化的步进曝光剂量的自动变化，以及用于实现其的系统
公开(公告)号：US06365422B1
公开(公告)日：2002-04-02
申请号：US09766737
申请日：2001-01-22
申请人： Joyce S. Oey Hewett , Anthony J. Toprac
发明人： Joyce S. Oey Hewett , Anthony J. Toprac
IPC分类号： H01L2166
CPC分类号： G03F7/70483 , H01L22/20
摘要： A novel method and system for fabricating integrated circuit devices is disclosed herein. In one embodiment, the method comprises determining at least one electrical performance characteristic of a plurality of semiconductor devices formed above at least one semiconducting substrate, providing the determined electrical performance characteristics to a controller that determines, based upon the determined electrical characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on at least one subsequently processed substrate, and performing the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates. The system comprises a metrology tool for determining an electrical performance characteristic of a plurality of semiconductor devices formed above at least one substrate, a controller that determines, based upon the determined electrical performance characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on subsequently processed substrates, and a stepper tool that performs the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates.
摘要翻译：本文公开了一种用于制造集成电路器件的新颖方法和系统。在一个实施例中，该方法包括确定在至少一个半导体衬底上方形成的多个半导体器件的至少一个电性能特性，将确定的电性能特性提供给控制器，所述控制器基于所确定的电特性确定跨衬底将对至少一个随后处理的基板进行步进曝光处理的曝光剂量的变化，以及对随后处理的基板上的曝光剂量的跨基板变化进行步进曝光处理。该系统包括用于确定在至少一个衬底上形成的多个半导体器件的电性能特征的计量工具，控制器，其基于确定的电性能特性确定步进曝光的曝光剂量中的跨衬底变化在后续处理的基板上执行的处理以及执行步进曝光处理的步进工具，其包括曝光剂量对随后处理的基板的跨基板变化。

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