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    • 24. 发明授权
    • Single-crystal-silicon 3D micromirror
    • 单晶硅3D微镜
    • US07486430B2
    • 2009-02-03
    • US11345891
    • 2006-02-02
    • Chih Kiong Terence GanAjay AgarwalJanak SinghXiaolin Zhang
    • Chih Kiong Terence GanAjay AgarwalJanak SinghXiaolin Zhang
    • G02B26/00G02B26/08
    • G02B26/0866
    • In a 3D free space micromirror device, a mirror plate is joined with actuators through flexible springs where the other ends of the actuators have fixed support on the substrate. Single crystal silicon and aluminum are used as bi-morph materials with silicon dioxide providing electrical isolation between the two. Thickness variation in the microstructure is achieved by two-step p-n junction formed in a p-type substrate. Thick and thin n-silicon layer formation and DRIE cut mechanisms are employed in such a way that all the thick and thin silicon components of the structure are released simultaneously avoiding overetch which can be detrimental to the thin flexural springs. Working prototypes of the device have been found suitable for any optical switching array architecture where deflections up to 10 degrees are required.
    • 在3D自由空间微镜装置中,镜板通过柔性弹簧与致动器连接,致动器的另一端在基板上具有固定的支撑。 单晶硅和铝被用作双变体材料,二氧化硅在两者之间提供电隔离。 通过在p型衬底中形成的两步p-n结实现微结构的厚度变化。 使用厚且薄的n型硅层形成和DRIE切割机构,使得结构的所有厚和薄的硅部件同时释放,避免了可能对薄弯曲弹簧有害的过蚀刻。 已经发现器件的工作原型适用于需要高达10度偏转的任何光学开关阵列架构。
    • 25. 发明授权
    • Method of fabricating micro-mirror switching device
    • 制造微镜开关装置的方法
    • US06858459B2
    • 2005-02-22
    • US10154279
    • 2002-05-23
    • Janak SinghUppili SridharRanganathan NagarajanQuanbo Zou
    • Janak SinghUppili SridharRanganathan NagarajanQuanbo Zou
    • H01L21/00H01L31/0232
    • B81C1/00142B81B2201/042G02B26/0841
    • Method of fabricating a micro-mirror switching device in single crystal silicon are described. The device is fabricated as three main elements: silicon mirror plate with metal-mirror, secondary actuator, and hinge/spring mechanism to integrate the mirror plate with the actuator. p-n junction is first formed on p-type silicon. Trenches are then etched in n-silicon to define the device element boundaries and filled with silicon dioxide. Three layers of sacrificial oxide and two structural poly-silicon layers are deposited and patterned to form device elements. Novel release processes, consisting of backside electrochemical etching in potassium-hydroxide, reactive ion etching to expose oxide-filled trenches from the bottom, and hydrofluoric acid etching of sacrificial oxide layers and oxide in silicon trenches, form the silicon blocks; those that are not attached to structural poly-silicon are sacrificed and those that are attached are left in place to hold together the switching device elements.
    • 描述了在单晶硅中制造微镜开关器件的方法。 该装置被制造为三个主要元件:具有金属镜的硅镜板,二次致动器和用于将镜面板与致动器集成的铰链/弹簧机构。 p-n结首先在p型硅上形成。 然后在n硅中蚀刻沟槽以限定器件元件边界并填充二氧化硅。 沉积和图案化三层牺牲氧化物和两个结构多晶硅层以形成器件元件。 由氢氧化钾中的背面电化学蚀刻,从底部暴露氧化物填充的沟槽的反应离子蚀刻和硅沟槽中的牺牲氧化物层和氧化物的氢氟酸蚀刻组成的新型释放过程形成硅块; 牺牲未附着于结构多晶硅的那些,并且将附着的那些留在适当位置以将开关元件元件保持在一起。